Abstract: This liquid sealing material has low thermal expansion and has injection properties for injection into gaps between a semiconductor element and a substrate; this electronic component is formed by sealing a sealing site using the liquid sealing material. This liquid sealing material is characterized by containing (A) a liquid epoxy resin, (B) a curing agent, (C) a silica filler with an average particle diameter of 7-50 nm, surface treated with 2-(3,4-epoxy cyclohexyl) ethyl trimethoxysilane, and (D) a silica filler with an average particle diameter of 0.2-5 ?m, wherein relative to a total of 100 parts by mass of all components of the liquid sealing material, the total of the silica filler of component (C) and the silica filler of the component (D) is 45-77 parts by mass, and the mixing ratio (weight ratio) of the silica filler of component (C) and the silica filler of component (D) is 1:10.2-1:559.

Abstract: An epoxy resin composition includes: (A) epoxy resin; (B) a curing agent; (C) 0.1 to 10 mass % of silica filler with an average particle size of 10 nm or more and 100 nm or less; and (D) 40 to 75 mass % of silica filler with an average particle size of 0.3 ?m or more and 5 ?m or less. The component (C) and the component (D) are contained by 40.1 to 77 mass % in total.

Abstract: A resin composition containing (A) an epoxy resin; (B) a compound represented by formula (1) below; (C) a curing accelerator; and (D) a silane coupling agent is provided. The compound of the (B) component has a content of 1:0.5 to 1:2.5, in terms of an equivalent ratio between epoxy groups in the epoxy resin of the (A) component and thiol groups in the compound of the (B) component, the silane coupling agent of the (D) component has a content of 0.2 parts by mass to 50 parts by mass with respect to 100 parts by mass in total of the (A) component, the (B) component, the (C) component, and the (D) component, and an equivalent ratio between thiol groups in the compound of the (B) component and Si in the silane coupling agent of the (D) is 1:0.002 to 1:1.

Abstract: A method of manufacturing a bonded body in which a first body and a second body are bonded using a glass paste. The glass paste includes a crystallized glass frit (A) and a solvent (B). A remelting temperature of the crystallized glass frit (A) is higher than a crystallization temperature thereof which is higher than a glass transition temperature thereof. The method includes: applying the glass paste on at least one of the first and second bodies, bonding the first and second bodies by interposing the glass paste therebetween, heating the bonded first and second bodies to a temperature that is not lower than the crystallization temperature and lower than the remelting temperature of the crystallized glass frit (A), and obtaining the bonded body by cooling the bonded first and second bodies to a temperature that is not higher than the glass transition temperature of the crystallized glass frit.

Abstract: A heat conductive paste including silver fine particles having an average particle diameter of primary particles of 40 to 350 nm, a crystallite diameter of 20 to 70 nm, and a ratio of the average particle diameter to the crystallite diameter of 1 to 5, an aliphatic primary amine and a compound having at least one phosphoric acid group. The heat conductive paste includes 1 to 40 parts by mass of the aliphatic primary amine and 0.001 to 2 parts by mass of the compound having at least one phosphoric acid group based on 100 parts by mass of the silver fine particles. The heat conductive paste has a high conductivity.

Abstract: The purpose of the present invention is to provide: a liquid sealing material which has excellent PCT (pressure cooker test) resistance; and an electronic component which is obtained by sealing a part to be sealed with use of the liquid sealing material. A liquid sealing material of the present invention contains (A) a liquid epoxy resin, (B) a curing agent, (C) a silica filler and (D) a coupling agent, and is characterized in that the boron content in the silica filler (C) has an average of 1-50 ppm.

Abstract: A method for producing a metal particle which includes the steps of: mixing a metal salt and a polycarboxylic acid in a liquid phase; adding a reducing agent to the resultant mixture to deposit metal particles; and drying the deposited metal particles.

Abstract: A lithium ion secondary battery that can be charged without regard to polarity is disclosed. The lithium ion secondary battery includes a lithium ion secondary battery unit, which includes a first electrode layer and a second electrode layer that are laminated on an electrolytic region. The first electrode layer and the second electrode layer contain Li2Mn2O4 as a common active material.

Abstract: Embodiments of the present invention relates generally to the manufacture of printed circuit boards (PCB's) or printed wiring boards (PWB's), and particularly to methods for treating smooth copper surfaces to increase the adhesion between a copper surface and an organic substrate. More particularly, embodiments of the present invention related to methods of achieving improved bonding strength of PCBs without roughening the topography of the copper surface. The bonding interface between the treated copper and the resin layer of the PCB exhibits excellent resistance to heat, moisture, and chemicals involved in post-lamination process steps.

Abstract: A glass frit having a low melting point containing (A) Ag2O, (B) V2O5, and (C) at least one first oxide selected from the group consisting of MoO3, ZnO, CuO, TiO2, Bi2O3, MnO2, MgO, Nb2O5, BaO and P2O5. The glass frit preferably contains 40 to 70% by mass of (A), 10 to 40% by mass of (B), and 0.5 to 30% by mass of (C) with respect to the total mass in terms of oxides. Furthermore, the glass frit preferably has a mass ratio (Ag2O/V2O5) of (A) to (B) of 1.8 to 3.2.

Abstract: A liquid sealing material which has excellent PCT (pressure cooker test) resistance, and an electronic component which is obtained by sealing a part to be sealed with use of the liquid sealing material. A liquid sealing material contains (A) a liquid epoxy resin, (B) a curing agent, (C) a silica filler and (D) a coupling agent, and the boron content in the silica filler (C) has an average of 1-50 ppm.

Abstract: A conductive composition, which can form bonded portions and is capable of maintaining a thickness of the bonded portions and bonding strength, and which includes: (A) silver fine particles having a number average particle diameter of primary particles of 40 nm to 400 nm, (B) a solvent, and (C) thermoplastic resin particles having a maximal value of an endothermic peak in a DSC chart, determined by a measurement using a differential scanning calorimeter, within a range of 80° C. to 170° C.

Abstract: An underfill composition for encapsulating a bond line and a method of using the underfill composition are described. Advantageously, the disclosed underfill composition in an uncured state has a fluidity value of less than about ten minutes over about a two centimeter distance at a temperature of about 90 degrees C. and at a bond line thickness of about 50 microns or less and still have a bulk thermal conductivity that is greater than about 0.8 W/mK in the cured state.

Abstract: A conductive paste including (A) a silver powder, (B) a glass frit, (C) an organic binder and (D) a powder containing Cu and at least one metal element selected from the group consisting of V, Cr, Mn, Fe and Co. The powder (D) may thus contain Cu and Mn, Cu and Fe or Cu and Co. The conductive paste has a desirable electromigration resistance, solder heat resistance and adhesiveness to a substrate.

Abstract: A conductive paste including: (A) a silver powder; (B) a glass frit; (C) an organic binder; and (D) a powder containing copper, tin, and manganese.

Abstract: A conductive paste is provided which can form electrodes in crystalline silicon solar cells at low cost while ensuring that the electrodes exhibit low contact resistance with respect to both p-type and n-type impurity diffusion layers. The conductive paste for forming a solar cell electrode includes a silver powder, a glass frit, an additive particle and an organic vehicle, the glass frit having a glass transition point of 150 to 440° C., the additive particle including an alloy material containing 20 to 98 mass % aluminum, the conductive paste including the additive particle in an amount of 2 to 30 parts by weight with respect to 100 parts by weight of the silver powder.

Abstract: A process for producing conductive pastes for forming solar cell electrodes, including a step of measuring binding energies of oxygen in a glass frit by X-ray photoelectron spectroscopy, a step of selecting a glass frit providing an X-ray photoelectron spectrum representing binding energies of oxygen in which the signal intensity of a peak with a peak top at a range from 529 eV to less than 531 eV has a proportion of 40% or more relative to the total of signal intensities from 526 eV to 536 eV, and a step of mixing together a conductive powder, the glass frit and an organic vehicle.

Abstract: A conductive paste including (A) conductive particles, (B) a glass frit containing substantially no lead, arsenic, tellurium, and antimony, and (C) a solvent. The glass frit (B) has a remelting temperature of 320 to 360° C., wherein the remelting temperature is indicated by a peak top of at least one endothermic peak having an endotherm of 20 J/g or more in a DSC curve as measured by a differential scanning calorimeter. The conductive paste can also include at least one metal oxide (D) selected from the group consisting of tin oxide, zinc oxide, indium oxide, and copper oxide. The glass frit (B) can further include (B-1) Ag2O, (B-2) V2O5, and (B-3) MoO3. The conductive paste can achieve binding at a relatively low temperature (such as 370° C. or lower) and maintains a bond strength at a relatively high temperature (such as 300 to 360° C.).

Abstract: A conductive paste including (A) conductive particles, (B) a glass frit containing substantially no lead, arsenic, tellurium, and antimony, and (C) a solvent. The glass frit (B) has a remelting temperature of 320 to 360° C., wherein the remelting temperature is indicated by a peak top of at least one endothermic peak having an endotherm of 20 J/g or more in a DSC curve as measured by a differential scanning calorimeter. The conductive paste can also include at least one metal oxide (D) selected from the group consisting of tin oxide, zinc oxide, indium oxide, and copper oxide. The glass frit (B) can further include (B-1) Ag2O, (B-2) V2O5, and (B-3) MoO3. The conductive paste can achieve binding at a relatively low temperature (such as 370° C. or lower) and maintains a bond strength at a relatively high temperature (such as 300 to 360° C.).

Abstract: Conventional ion rechargeable batteries having an electrode layer on an electrolyte layer suffer from an impurity layer formed at the interface, degrading performance. Conventional batteries with no such impurity layer have a problem of weak interface bonding. In the present invention, in a baking process step after an electrode layer is laminated on an electrolyte layer, materials for an electrode layer and an electrolyte layer are selected such that an intermediate layer formed of a reaction product contributing to charging and discharging reactions is formed at the interface of the electrode layer and the electrolyte layer. In addition, a paste that an active material is mixed with a conductive material at a predetermined mixing ratio is used to form a positive electrode layer and a negative electrode layer. Reductions in electrode resistance and interface resistance and improvement of charging and discharging cycle characteristics are made possible.