Patents Assigned to NGK Insulators
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Publication number: 20240424868Abstract: A vehicle air conditioning system includes: a dehumidifying device; a power source; an inflow pipe for allowing air from a vehicle interior or a vehicle exterior to flow into the dehumidifying device; a first outflow pipe for returning the air that has been dehumidified by the dehumidifying device to the vehicle interior; a second outflow pipe through which the air containing moisture released by a regeneration process of the dehumidifying device is circulated; and a switching valve provided at a branch portion between the first outflow pipe and the second outflow pipe, the switching valve being capable of switching the flow of the air to the first outflow pipe or the second outflow pipe. A separator capable of separating moisture contained in the air by centrifugation is provided in the second outflow pipe. The second outflow pipe merges with the first outflow pipe on a downstream side of the separator.Type: ApplicationFiled: May 20, 2024Publication date: December 26, 2024Applicant: NGK INSULATORS, LTD.Inventor: Yoshiki KONNO
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Publication number: 20240429440Abstract: A solid electrolyte contains Li, M, Si, and F, where M is an element serving as a cation. It is preferable that M may be an element serving as a trivalent cation and that the solid electrolyte may contain a component expressed by a composition formula of LiaMbSicFd, the composition formula satisfying 0.9(3-x)?a?1.1(3-x), 0.9(1-x)?b?1.1(1-x), 0.9x?c?1.1x, 5.4?d?6.6, and 0<x<1.Type: ApplicationFiled: September 4, 2024Publication date: December 26, 2024Applicants: NGK INSULATORS, LTD., NAGOYA INSTITUTE OF TECHNOLOGYInventors: En YAGI, Toshihiro YOSHIDA, Yoshimasa KOBAYASHI, Yuji KATSUDA, Reona MIYAZAKI
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Patent number: 12176186Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.Type: GrantFiled: February 16, 2023Date of Patent: December 24, 2024Assignee: NGK INSULATORS, LTD.Inventors: Seiya Inoue, Tatsuya Kuno
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Patent number: 12174051Abstract: An electrode embedded ceramic structure includes: a first ceramic layer; an electrode layer formed on the first ceramic layer; and a second ceramic layer covering the first ceramic layer and the electrode layer, the second ceramic layer being thinner than the first ceramic layer. In a cross section of the first ceramic layer, the electrode layer, and the second ceramic layer along a laminating direction in this electrode embedded ceramic structure, T1 and T2 satisfy Equation (T2?T1)/T2?0.15, where T1 denotes a least thickness in the second ceramic layer, and T2 denotes an average thickness of the second ceramic layer.Type: GrantFiled: March 25, 2022Date of Patent: December 24, 2024Assignee: NGK INSULATORS, LTD.Inventors: Takao Ohnishi, Daishi Tanabe, Akifumi Morishita
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Patent number: 12170190Abstract: A wafer support table includes a ceramic base having a wafer placement surface and including an RF electrode and a heater electrode embedded, the RF electrode being closer to the wafer placement surface; a hole extending from a surface of the ceramic base opposite the wafer placement surface toward the RF electrode; and an RF rod through having a top end joined to the RF electrode or joined to a conductive member connected to the RF electrode, wherein the RF rod is a hybrid rod including a first rod member that is made of Ni and constitutes a portion of the RF rod from the top end to a predetermined position and a second rod member that is joined to the first rod member and constitutes a portion of the RF rod from the predetermined position to the base end and is made of a non-magnetic material.Type: GrantFiled: October 19, 2022Date of Patent: December 17, 2024Assignee: NGK INSULATORS, LTD.Inventors: Yutaka Unno, Tomohiro Hara
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Publication number: 20240412998Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface; a cooling plate provided on a lower surface of the ceramic plate; and a refrigerant flow path provided inside the cooling plate, wherein the refrigerant flow path includes a first portion and a second portion, the second portion continuing from the first portion and being divided into two or more ways forming branches that run side by side, and wherein the first portion has a cross-sectional area smaller than a sum of cross-sectional areas of the respective branches included in the second portion.Type: ApplicationFiled: February 20, 2024Publication date: December 12, 2024Applicant: NGK INSULATORS, LTD.Inventors: Taro USAMI, Yohei KAJIURA, Keita IKEGAMI
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Publication number: 20240410652Abstract: A heat treatment furnace may include: a furnace body including an entrance, an exit and a processing chamber; a conveyor configured to convey a sheet-shaped object extending from the entrance to the exit; and a heating device configured to heat the object being conveyed by the conveyor. The heating device may include one or more heaters each including a heating part configured to radiate infrared electromagnetic waves to the object. The one or more heaters may be disposed along a conveying path of the object. The heating part may be disposed parallel to a front or back surface of the object, and may extend in a width direction of the object orthogonal to the conveying path. When a widthwise dimension of the object is Wd and a widthwise dimension of the heating part is Hd, Wd/Hd may be in a range of 0.20 to 0.80.Type: ApplicationFiled: June 5, 2024Publication date: December 12, 2024Applicant: NGK INSULATORS, LTD.Inventors: Takeshi KOMAKI, Takuma MATSUMOTO
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Publication number: 20240413770Abstract: An electrostatic chuck fixing a workpiece disposed on a mounting surface via electrostatic attraction with application of a voltage to an electrode buried inside the electrostatic chuck comprises: the mounting surface having an uneven structure including a plurality of protrusions two-dimensionally spaced apart with predetermined pitches and a depression that is flat between the protrusions, each of the protrusions includes: a flat portion having a flat surface being vertical in a thickness direction of the electrostatic chuck and having a uniform height; and a sloped portion around the flat portion having a height decreasing from the flat portion toward the depression, and the sloped portion has an upper surface with a slope angle of 65 degrees or higher and 84 degrees or lower in the thickness direction of the electrostatic chuck.Type: ApplicationFiled: February 5, 2024Publication date: December 12, 2024Applicant: NGK INSULATORS, LTD.Inventor: Daichi KUBOTA
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Patent number: 12165855Abstract: A ceramic heater includes an AlN ceramic substrate having a wafer placement surface in which, from a position closer to the wafer placement surface, a plasma-generation RF electrode and a heater electrode are embedded in this order so as to be separated from each other. The AlN ceramic substrate includes an AlN ceramic high-resistivity layer disposed between the RF electrode and the heater electrode, and an AlN ceramic low-resistivity layer other than the high-resistivity layer. The high-resistivity layer and the low-resistivity layer each contain Si, Mg, and Ti. The high-resistivity layer has higher Mg and Ti contents and a higher volume resistivity than the low-resistivity layer.Type: GrantFiled: August 18, 2021Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventor: Hideaki Takasaki
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Patent number: 12166465Abstract: A bonded body includes a supporting substrate, piezoelectric material substrate and a multilayer film between the supporting substrate and piezoelectric material substrate. The multilayer film includes a lamination structure having a first layer, second layer, third layer and fourth layer in that order. The first layer and third layer are composed of silicon oxides, and the second layer and fourth layer are composed of metal oxides. The refractive index of the second layer is higher than the refractive index of the first layer and refractive index of the third layer. The refractive index of the second layer is different from the refractive index of the fourth layer.Type: GrantFiled: January 20, 2022Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventors: Ryosuke Hattori, Keiichiro Asai, Tomoyoshi Tai, Yudai Uno
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Patent number: 12163249Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, or a solid solution containing two or more selected from the group consisting of ?-Al2O3, ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.Type: GrantFiled: September 7, 2021Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventors: Morimichi Watanabe, Jun Yoshikawa
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Patent number: 12163210Abstract: There is provided a copper alloy consisting of: Ni: 10 to 15% by weight, Sn: 5.0% by weight or more, Mn: 0 to 0.5% by weight, Zr: 0 to 0.5% by weight, at least one selected from the group consisting of Nb, Fe, Al, Ti, B, Zn, Si, Co, P, Mg, and Bi: 0 to 0.2% by weight in total, and the balance being Cu and inevitable impurities. The copper alloy has, in an X-ray diffraction profile, (i) a peak in the vicinity of 2?=46 to 50° having a peak intensity of 30% or more with respect to a peak intensity in the vicinity of 2?=84 to 88° and (ii) a peak in the vicinity of 2?=40 to 42° having a peak intensity of 2.0% or more with respect to a peak intensity in the vicinity of 2?=84 to 88°.Type: GrantFiled: April 27, 2022Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventors: Ryota Takeuchi, Takanori Asano
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Patent number: 12163252Abstract: An ?- or ?-Ga2O3 crystal is produced by bringing an aqueous solution including a Ga ion into a supercritical state having a temperature of 400° C. or more and a pressure of 22.1 MPa or more.Type: GrantFiled: February 11, 2022Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventors: Jun Yoshikawa, Miho Maeda
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Patent number: 12162805Abstract: A porous honeycomb structure including cell channels passing through an interior of the porous honeycomb structure and partitioned by porous partition walls, wherein the porous partition walls include skeleton portions containing an aggregate and a bonding material, and pore portions formed among the skeleton portions and through which a fluid can flow; and the porous partition walls have a porosity of 40 to 48% as measured by a mercury intrusion method, and a cumulative 50% pore diameter (D50) from a large pore side of 6 to 10 ?m in a volume-based cumulative distribution of pore diameters measured by the mercury intrusion method, and a maximum pore diameter observed with a scanning electron microscope of 40 ?m or less, and a ratio of a contact area between the aggregate and the bonding material to a surface area of the bonding material observed with the scanning electron microscope of 61 to 80%.Type: GrantFiled: February 23, 2022Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventors: Taira Hayakawa, Suguru Kodama, Hiroaki Noguchi
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Patent number: 12165948Abstract: A bonded substrate includes: a silicon nitride ceramic substrate; a copper plate; and a bonding layer bonding the copper plate to the silicon nitride ceramic substrate, wherein the bonding layer has a first interface in contact with the silicon nitride ceramic substrate and a second interface in contact with the copper plate, and contains a nitride and a silicide of an active metal as at least one metal selected from the group consisting of titanium and zirconium, an atomic fraction of nitrogen of the bonding layer is greatest at the first interface and is smallest at the second interface, and a sum of atomic fractions of the active metal and silicon of the bonding layer is smallest at the first interface and is greatest at the second interface.Type: GrantFiled: December 10, 2021Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventor: Takashi Ebigase
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Patent number: 12166237Abstract: Provided is an air electrode/LDH separator assembly including: a rigid porous layer having rigidity and air permeability, wherein the rigidity is defined as a proportion of displacement in a compression direction of less than 3% when pressurized at 0.1 MPa; an air electrode layer that covers both sides of the rigid porous layer, or both sides and end faces of the rigid porous layer provided that at least one end face is excluded; and a layered double hydroxide (LDH) separator that covers an outside of the air electrode layer; wherein i) the rigid porous layer is made of a metal or an electrically conductive ceramic, whereby the rigid porous layer itself functions as a positive electrode current collector, or ii) the rigid porous layer is made of an insulating material and is covered with a porous metal layer, whereby the porous metal layer functions as a positive electrode current collector.Type: GrantFiled: January 14, 2022Date of Patent: December 10, 2024Assignee: NGK INSULATORS, LTD.Inventor: Naomi Saito
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COMPOSITE SUBSTRATE, SURFACE ACOUSTIC WAVE ELEMENT, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE
Publication number: 20240405743Abstract: A composite substrate includes in this order: a piezoelectric layer; a reflective layer including a low-impedance layer containing silicon oxide and a high-impedance layer; and a support substrate. The low-impedance layer has a density of 2.4 g/cm3 or less. The high-impedance layer has formed therein an amorphous region.Type: ApplicationFiled: August 15, 2024Publication date: December 5, 2024Applicant: NGK INSULATORS, LTD.Inventors: Takeshi YAMAMOTO, Naoki FUJITA, Keiichiro ASAI -
Patent number: 12159907Abstract: Provided is a ?-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. The maximum value ?max and the minimum value ?min for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of ?max-?min?0.30°. The off-angle is defined as an inclination angle ? of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.Type: GrantFiled: January 31, 2022Date of Patent: December 3, 2024Assignee: NGK INSULATORS, LTD.Inventors: Hiroshi Fukui, Morimichi Watanabe, Jun Yoshikawa
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Patent number: 12157116Abstract: A plugged honeycomb structure includes a honeycomb structure body having a porous partition wall disposed to surround a plurality of cells; and a plugging portion disposed at one end of the cells, wherein, in a section orthogonal to the extending direction of the cell, the cells each have a shape that is polygon, and one of the inflow cells and another are adjacent to each other with the partition wall therebetween, and in the section orthogonal to the extending direction of the cell, a total area of the inflow cell is larger than a total area of the outflow cell, a porosity of the partition wall is 38% or more, a thickness of the partition wall is 125 ?m or more and 280 ?m or less, a cell density of the honeycomb structure body is 31.0 cells/cm2 or more, and an air-permeability resistance of the partition wall is 4.5×107Pa·s/m2 or less.Type: GrantFiled: November 3, 2021Date of Patent: December 3, 2024Assignee: NGK INSULATORS, LTD.Inventors: Makoto Teranishi, Tadato Ito, Ken Itadu, Kana Sakamoto
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Patent number: 12158093Abstract: A method for estimating a heat generation distribution in a honeycomb structure includes: a first step of allowing a predetermined minute current to flow between electrode layers A1 and B1 to energize a honeycomb structure, and measuring surface potentials at multiple points; a second step of allowing a predetermined minute current to flow between electrode layers A2 and B2 to energize the honeycomb structure, and measuring surface potentials at multiple points; a third step of quantifying, based on the measured surface potentials at the multiple points, at least one of resistances at the multiple points in the honeycomb structure, resistance ratios for energization paths, voltage sharing ratios, and surface potentials of the electrode layers A1, A2, B1 and B2; and a step of estimating a heat generation distribution in the honeycomb structure based on the values quantified in the third step.Type: GrantFiled: January 24, 2022Date of Patent: December 3, 2024Assignee: NGK INSULATORS, LTD.Inventors: Takashi Noro, Shungo Watanabe, Chikashi Ihara
