Abstract: There is provided a novel gelator containing a monourea derivative. A gelator comprising a compound of formula (1): wherein R1 is a linear or branched alkyl group having a carbon atom number of 2 to 20, a cyclic alkyl group having a carbon atom number of 3 to 20, or a linear or branched alkenyl group having a carbon atom number of 12 to 20; and Ar is a C6-18 aryl group unsubstituted or optionally substituted with at least one substituent selected from the group consisting of a C1-10 alkyl group, a C1-10 alkoxy group, a C6-18 aryloxy group, a halogen atom, a nitro group, a phenyl group, a C2-10 alkylcarbonyl group, and a C7-18 aralkyl group.

Abstract: There is provided a thermosetting resin composition. A resin composition, comprising: (A) component, (B) component, and a solvent, wherein the content of the (B) component is 0.1 to 5.

Abstract: A novel photocurable resin composition including: a polymer with a weight average molecular weight of 1,000 to 50,000, the polymer having a structural unit of formula (1), and having a structure of formula (2) at an end: wherein X is a C1-6 alkyl group, vinyl group, allyl group, or glycidyl group; m and n are each independently 0 or 1; Q is a divalent hydrocarbon group having a carbon atom number of 1 to 16; Z is a divalent linking group having a carbon atom number of 1 to 4, wherein the divalent linking group is attached to the —O— group in formula (1); and R1 is a hydrogen atom or methyl group; a radical photopolymerization initiator; and a solvent.

Abstract: The aminosilane-modified colloidal silica dispersion contains colloidal silica particles having surfaces to which there are bound a first silyl group represented by the following formula (1): R1aSi(OR2)3-aO— and a second silyl group represented by the following formula (2): R3bSi(OR4)3-bO— and, as a dispersion medium, a mixed solvent formed of a polar solvent S1 having a dielectric constant at 20° C. of 15 or higher and lower than 60 and a non-polar solvent S2 having a dielectric constant at 20° C. of 1 or higher and lower than 15, at a mass ratio (S1/S2) of 0.3 to 6.

Abstract: A retardation material-forming resin composition for providing an orientation material that has high photoreaction efficiency and with which a polymerizable crystal can be aligned in a highly sensitive manner. A retardation material-forming resin composition being thermally curable wherein including a resin (component (A)) having a photo-aligning group to which a thermally reactive moiety is bonded directly or connected via a linking group; an orientation material obtained by use of the composition, and a retardation material formed by use of a cured film obtained from the composition.

Abstract: A method for adjusting hardness of a stick-shaped base material including a lipid peptide compound. A method for adjusting hardness of a gelled solid base material for skin external application including a surfactant, water, and lipid peptide compound including compounds of formulae (1) or similar, wherein R1 is a C9-23 aliphatic group, R2 is a hydrogen atom or similar, and R3 is a —(CH2)n-X group, n is a number from 1 to 4, and X is amino group, the method including adding a pH adjuster to a solution in which the material is dissolved, or a solution including a surfactant, water, and lipid peptide compound including at least one of compounds of formulae (1) to (3) or pharmaceutically usable salts thereof, to adjust the pH of the solution to a weak acidic to neutral range, causing gelation of the solution to form a solid base material for skin external application.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Abstract: A charge transport material containing a charge transport substance that is composed of a compound represented by formula (1) and another charge transport substance that is composed of a charge transport compound having a molecular weight of 200-9,000 exhibits good solubility in an organic solvent. A charge transport varnish, from which a charge transport thin film having excellent charge transport properties, flatness and uniformity is formed with good reproducibility, is able to be prepared by dissolving the above-described charge transport material in an organic solvent.

Abstract: The present invention is directed to new crystalline forms of Pitavastatin hemicalcium salt, referred to hereinafter as polymorphic Forms A, B, C, D, E and F, as well as the amorphous form. Furthermore, the present invention is directed to processes for the preparation of these crystalline forms and the amorphous form and pharmaceutical compositions comprising these crystalline forms or the amorphous forms.

Abstract: Aniline derivatives such as those represented by the formulas shown, for example, have good solubility in organic solvents, and are able to provide organic electroluminescent elements having excellent longevity when thin films containing said aniline derivatives as charge transporting substances are used for hole injection layers.

Abstract: There is provided an epoxy resin composition containing an epoxy compound, which has a low viscosity and a low dielectric constant, and when added to a general-purpose epoxy resin composition, can lower a viscosity of the composition and can sufficiently lower a dielectric constant of an epoxy resin cured product obtained from the composition. An epoxy resin composition comprising: (a) an epoxy component containing at least an epoxy compound of formula [1]; and (b) a curing agent: wherein R1 to R3 each independently are a hydrogen atom or methyl group, and L1 to L3 each independently are pentamethylene group, hexamethylene group or heptamethylene group.

Abstract: A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.

Abstract: A highly branched polymer comprising repeating units which each have an acid group such as sulfo group, said repeating units being represented by formula [1] or the like, and a dispersant for carbon nanotubes (CNTs) which comprises the highly branched polymer can disperse CNTs in a medium such as an organic solvent to the individual sizes and can yield thin films having improved conductivity. In formula [1], any one of A1 to A5 is a sulfo group, and the others are each a hydrogen atom.

Abstract: This charge-transporting material, which includes a charge-transporting substance, halo-tetracyanoquinodimethane, and a complexing agent comprising an amide compound such as 1,3-dimethyl-2-imidazolidinone, for example, and capable of forming a complex with halo-tetracyanoquinodimethane, and in which the halo-tetracyanoquinodimethane and complexing agent form a complex, makes it possible to provide a thin film having excellent charge-transporting properties and to realize an organic EL element having low drive voltage when said thin film is applied to a hole injection layer.

Abstract: A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices.

Abstract: A nonaqueous secondary cell provided with: a positive electrode provided with a positive-electrode current-collecting substrate and a positive-electrode active material layer formed thereon, the positive-electrode active material layer being able to absorb or discharge lithium; a negative electrode provided with a negative-electrode current-collecting substrate and a negative-electrode active material layer formed thereon, the negative-electrode active material layer being able to absorb or discharge lithium; a separator interposed between the positive and negative electrodes; and a nonaqueous electrolyte solution. The nonaqueous electrolyte solution contains a sulfonyl imide electrolyte and a nonaqueous organic solvent. An electroconductive protective layer obtained by dispersing an electroconductive carbon material in a binder resin is formed on one or both surfaces of the positive-electrode current-collecting substrate and/or the negative-electrode current-collecting substrate.

Abstract: There is provided a new coating liquid for resist pattern coating.

Abstract: Provided are a thin-film planarization method, a planarized thin-film formation method, and a thin-film formation varnish to be used in these methods, in which when forming a thin film using a thin-film formation varnish which includes an organic compound and an organic solvent, the varnish flow activation energy is set to no more than 28 kJ/mol.

Abstract: A material having a low refractive index that exhibits sufficiently low refractive index without deteriorating the strength of cured film produced therefrom, that can be cured by an active energy ray that is applicable for a resin base material that is not desired to be exposed to heat. Curable composition including: siloxane oligomer (a) containing a radically polymerizable double bond obtained through hydrolysis and condensation of alkoxysilanes containing at least an alkoxysilane A of Formula [1] and alkoxysilane B of Formula [2] in an amount of 100 parts by mass; inorganic fine particles (b) in amount of 10 parts by mass to 1,000 parts by mass; polymerization initiator (c) generating a radical upon active energy ray irradiation in an amount of 0.1 parts by mass to 25 parts by mass R1aSi(OR2)4-a??[1] R3bSi(OR4)4-b??[2] a cured film produced from the composition, and a laminate including a low refractive index layer produced from the composition.

Abstract: A substituted alkenylbenzene compound of formula (4): wherein X1 is selected from the group consisting of a halogen atom, —SF5, C1-C6haloalkyl, hydroxy C1-C6haloalkyl, C1-C6alkoxy C1-C6haloalkyl, C3-C8halocycloalkyl, C1-C6haloalkoxy, C1-C3haloalkoxy C1-C3haloalkoxy, C1-C6haloalkylthio, C1-C6haloalkylsulfinyl and C1-C6haloalkylsulfonyl; X3 is selected from the group consisting of a hydrogen atom, halogen atom, cyano, nitro, C1-C6alkyl, C1-C6haloalkyl, C1-C6alkoxy and C1-C6alkylthio; X4 is selected from the group consisting of a hydrogen atom, halogen atom, cyano, C1-C4alkoxy and C1-C4haloalkoxy; R3 is —C(R3a)(R3b)R3c, where R3a and R3b independently of each other are a halogen atom, or R3a and R3b together form 3- to 6-membered ring together with the carbon atom bonding them by forming a C2-C5haloalkylene chain, and R3c is selected from the group consisting of a hydrogen atom, halogen atom, C1-C5haloalkyl, C1-C4haloalkoxy and C1-C4haloalkylthio, with a proviso that in case where X1 is a fluorine atom, chlo