Abstract: Methods and apparatuses for calibrating eddy current sensors. A calibration curve is formed relating thickness of a conductive layer in a magnetic field to a value measured by the eddy current sensors or a value derived from such measurement, such as argument of impedance. The calibration curve may be an analytic function having infinite number terms, such as trigonometric, hyperbolic, and logarithmic, or a continuous plurality of functions, such as lines. High accuracy allows the omission of optical sensors, and use of eddy current sensors for endpoint detection, transition call detection, and closed loop control in which a process parameter is changed based on the measured magnetic flux density change in one or more processing zones.

Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

Abstract: Methods and systems for positioning wafers using a dual side-by-side end effector robot are provided. The methods involve performing place moves using dual side-by-side end effector robots with active wafer position correction. According to various embodiments, the methods may be used for placement into a process module, loadlock or other destination by a dual wafer transfer robot. The methods provide nearly double the throughput of a single wafer transfer schemes by transferring two wafers with the same number of moves.

Abstract: A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 ?m in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.

Abstract: Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing film-precursor and an organometallic ligand transfer reagent into a processing chamber, adsorbing the silicon-containing film-precursor, the organometallic ligand transfer reagent, or both onto a surface of a semiconductor substrate under conditions whereby either or both form an adsorption-limited layer, and reacting the silicon-containing film-precursor with the organometallic ligand transfer reagent, after either or both have formed the adsorption-limited layer. The reaction results in the forming of the film layer. In some embodiments, a byproduct is also formed which contains substantially all of the metal of the organometallic ligand transfer reagent, and the methods may further include removing the byproduct from the processing chamber. Also disclosed herein are semiconductor processing apparatuses for forming SiC/SiCN film layers.

Abstract: A calibrated mass damper for use with end effectors for semiconductor wafer handling robots is described. The calibrated mass damper reduces vibrational response in an end effector carrying a semiconductor wafer without requiring modification of the end effector structure.

Abstract: A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.

Abstract: The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

Abstract: Methods of filling features with low-resistivity tungsten layers having good fill without use of a nucleation layer are provided. In certain embodiments, the methods involve an optional treatment process prior to chemical vapor deposition of tungsten in the presence of a high partial pressure of hydrogen. According to various embodiments, the treatment process can involve a soaking step or a plasma treatment step. The resulting tungsten layer reduces overall contact resistance in advanced tungsten technology due to elimination of the conventional tungsten nucleation layer.

Abstract: Novel methods for extending electrostatic chuck lifetimes are provided. The methods involve providing a chuck having a metal cooling plate attached to a ceramic top plate, and after a period of use, disassembling the chuck, and providing a new chuck including the used metal cooling plate. In certain embodiments, the use of a low temperature bond material uniquely allows the described disassembly and reassembly without damage to other parts of the chuck.

Abstract: High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential.

Abstract: Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.

Abstract: A robot for use in semiconductor vacuum chambers is disclosed. The robot may include two independently-driven arms configured for wafer handling. The robot may include three motors or drive systems and a tri-axial seal to realize independent extension/retraction of each arm and overall simultaneous rotation of the arm assembly. The robot may provide enhanced throughput efficiency over other robot designs.

Abstract: Methods for processing a substrate include a) arranging a substrate on a pedestal in a processing chamber; b) supplying precursor to the processing chamber; c) purging the processing chamber; d) performing radio frequency (RF) plasma activation; e) purging the processing chamber; and f) prior to purging the processing chamber in at least one of (c) or (e), setting a vacuum pressure of the processing chamber to a first predetermined pressure that is less than a vacuum pressure during at least one of (b) or (d) for a first predetermined period.

Abstract: Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

Abstract: The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: Flow distribution networks that supply process gas to two or more stations in a multi-station deposition chamber. Each flow distribution network includes an inlet and flow distribution lines for carrying process gas to the stations. The flow distribution lines include a branch point downstream from the inlet and two or more branches downstream from the branch point. Each branch supplies a station. The flow distribution network also includes highly variable flow elements in each branch. Restrictive components are placed downstream from the variable control elements in each branch. These restrictive components are nominally identical and designed to shift the bulk of the pressure drop away from the variable flow components to improve flow balancing while not unduly increasing inlet pressure. In some cases, the load shifting allows the more variable flow components to operate in the unchoked flow regime.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: Systems and methods of forming plasma are provided. In an embodiment, by way of example only, a plasma generation system includes a container comprising an insulating material, a means for forming a first plasma within the container from a processing gas, the first plasma including charged particles, a means for extracting a portion of the charged particles from the first plasma and storing the portion of extracted charged particles on the insulating material, and a means for forming a second plasma from the extracted portion of the charged particles and a second portion of the processing gas.