Patents Assigned to Novellus Systems
  • ENHANCING ADHESION OF CAP LAYER FILMS
    Publication number: 20140094038
    Abstract: The present invention provides methods and apparatuses for improving adhesion of dielectric and conductive layers on a substrate to the underlying layer. The methods involve passing a process gas through a plasma generator downstream of the substrate to create reactive species. The underlying layer is then exposed to reactive species that interact with the film surface without undesirable sputtering. The gas is selected such that the interaction of the reactive species with the underlying layer modifies the surface of the layer in a manner that improves adhesion to the subsequently formed overlying layer. During exposure to the reactive species, the substrate and/or process gas may be exposed to ultraviolet radiation to enhance surface modification. In certain embodiments, a single UV cure tool is used to cure the underlying film and improve adhesion.
    Type: Application
    Filed: September 13, 2013
    Publication date: April 3, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Jason Dirk Haverkamp, Dennis Hausmann, Roey Shaviv
  • Premetal dielectric integration process
    Patent number: 8685867
    Abstract: Provided herein are novel pre-metal dielectric (PMD) integration schemes. According to various embodiments, the methods involve depositing flowable dielectric material to fill trenches or other gaps between gate structures in a front end of line (FEOL) fabrication process. The flowable dielectric material may be partially densified to form dual density filled gaps having a low density region capped by a high density region. In certain embodiments, the methods include further treating at least a portion of the gap fill material after subsequent process operations such as chemical mechanical planarization (CMP) or contact etching.
    Type: Grant
    Filed: December 8, 2011
    Date of Patent: April 1, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Michal Danek, Bart van Schravendijk, Nerissa Draeger, Lakshminarayana Nittala
  • High Temperature Electrode Connections
    Publication number: 20140087587
    Abstract: Embodiments include a high temperature electrode connection assembly for a wafer-processing pedestal. The high temperature electrode connection assembly includes an electrode rod having a cup that mounts to a stud embedded in the pedestal and a plate adapter portion. The assembly also includes a floating plate having an outer surface and an aperture for receiving the electrode rod. The floating plate contacts an inner surface of the pedestal to resist lateral movement of the electrode rods. The assembly also includes an anti-rotation retainer ring that frictionally engages the electrode rod and an anti-rotation post extending from the outer surface of the floating plate. The anti-rotation post limits rotation of the electrode rod with respect to the floating plate.
    Type: Application
    Filed: November 2, 2012
    Publication date: March 27, 2014
    Applicant: Novellus Systems, Inc.
    Inventor: Gary Lind
  • Method of depositing a diffusion barrier for copper interconnect applications
    Patent number: 8679972
    Abstract: The present invention pertains to methods for forming a metal diffusion barrier on an integrated circuit wherein the formation includes at least two operations. The first operation deposits barrier material via PVD or CVD to provide some minimal coverage. The second operation deposits an additional barrier material and simultaneously etches a portion of the barrier material deposited in the first operation. The result of the operations is a metal diffusion barrier formed in part by net etching in certain areas, in particular the bottom of vias, and a net deposition in other areas, in particular the side walls of vias. Controlled etching is used to selectively remove barrier material from the bottom of vias, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: March 25, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Robert Rozbicki, Michal Danek, Erich Klawuhn
  • MULTI-STATION SEQUENTIAL CURING OF DIELECTRIC FILMS
    Publication number: 20140080324
    Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
    Type: Application
    Filed: November 21, 2013
    Publication date: March 20, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Krishnan Shrinivasan, Michael Rivkin, Eugene Smargiassi, Mohamed Sabri
  • Temperature controlled showerhead
    Patent number: 8673080
    Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: March 18, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Henner Meinhold, Dan M. Doble, Stephen Lau, Vince Wilson, Easwar Srinivasan
  • Diffusion barrier and etch stop films
    Patent number: 8669181
    Abstract: Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: March 11, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Yongsik Yu, Pramod Subramonium, Zhiyuan Fang, Jon Henri, Elizabeth Apen, Dan Vitkavage
  • REDUCED ISOTROPIC ETCHANT MATERIAL CONSUMPTION AND WASTE GENERATION
    Publication number: 20140061158
    Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.
    Type: Application
    Filed: November 6, 2013
    Publication date: March 6, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Steven T. Mayer, David W. Porter
  • Method for etching organic hardmasks
    Patent number: 8664124
    Abstract: A method of etching or removing an organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture to create a plasma of the mixture. The method further includes contacting the organic hardmask with the plasma, with the organic hardmask being at a temperature in excess of 200° C., to remove the organic hardmask without substantially harming the underlying substrate.
    Type: Grant
    Filed: February 13, 2012
    Date of Patent: March 4, 2014
    Assignee: Novellus Systems, Inc.
    Inventor: Wesley P. Graff
  • PLASMA CLEAN METHOD FOR DEPOSITION CHAMBER
    Publication number: 20140053867
    Abstract: Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).
    Type: Application
    Filed: October 30, 2013
    Publication date: February 27, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Zhiyuan Fang, Pramod Subramonium, Jon Henri, Keith Fox
  • METHODS AND APPARATUS FOR PLASMA-BASED DEPOSITION
    Publication number: 20140057454
    Abstract: High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential.
    Type: Application
    Filed: August 23, 2013
    Publication date: February 27, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Pramod Subramonium, Aaron Bingham, Tim Thomas, Jon Henri, Greg Farhner
  • FLOW BALANCING IN GAS DISTRIBUTION NETWORKS
    Publication number: 20140048141
    Abstract: Flow distribution networks that supply process gas to two or more stations in a multi-station deposition chamber. Each flow distribution network includes an inlet and flow distribution lines for carrying process gas to the stations. The flow distribution lines include a branch point downstream from the inlet and two or more branches downstream from the branch point. Each branch supplies a station. The flow distribution network also includes highly variable flow elements in each branch. Restrictive components are placed downstream from the variable control elements in each branch. These restrictive components are nominally identical and designed to shift the bulk of the pressure drop away from the variable flow components to improve flow balancing while not unduly increasing inlet pressure. In some cases, the load shifting allows the more variable flow components to operate in the unchoked flow regime.
    Type: Application
    Filed: November 2, 2012
    Publication date: February 20, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Jeffrey Womack, Stephen Lau
  • Methods for UV-assisted conformal film deposition
    Patent number: 8647993
    Abstract: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: February 11, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Adrien LaVoie, Bhadri Varadarajan, Jon Henri, Dennis Hausmann
  • High dose implantation strip (HDIS) in H2 base chemistry
    Patent number: 8641862
    Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.
    Type: Grant
    Filed: May 2, 2012
    Date of Patent: February 4, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Haruhiro Harry Goto, David Cheung
  • HIGH PRESSURE, HIGH POWER PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
    Publication number: 20140030444
    Abstract: Methods and apparatus for depositing a film on a substrate surface including plasma assisted surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction are provided. The embodiments disclosed herein relate to methods and apparatus for performing conformal film deposition and atomic layer deposition reactions that result in highly uniform films with low particle contamination. According to various embodiments, the methods and apparatus involve high deposition chamber pressures and plasma generation using high radio frequency powers.
    Type: Application
    Filed: July 29, 2013
    Publication date: January 30, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Shankar Swaminathan, Frank Pasquale, Adrien Lavoie, Karl Leeser
  • Plasma activated conformal dielectric film deposition
    Patent number: 8637411
    Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: January 28, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K. Kattige, Bart J. van Schravendijk, Andrew J. McKerrow
  • SYSTEMS AND METHODS FOR AT LEAST PARTIALLY CONVERTING FILMS TO SILICON OXIDE AND/OR IMPROVING FILM QUALITY USING ULTRAVIOLET CURING IN STEAM AND DENSIFICATION OF FILMS USING UV CURING IN AMMONIA
    Publication number: 20140020259
    Abstract: A processing system includes a chamber and a steam source that supplies steam in the chamber. A UV source directs UV light onto a deposited layer of a substrate in the presence of the steam from the steam source for a predetermined conversion period to at least partially convert the deposited layer.
    Type: Application
    Filed: July 31, 2013
    Publication date: January 23, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Bhadri N. Varadarajan, Bart Van Schravendijk
  • PHOTORESIST-FREE METAL DEPOSITION
    Publication number: 20140014522
    Abstract: Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
    Type: Application
    Filed: July 23, 2013
    Publication date: January 16, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Steven T. Mayer, John Stephen Drewery, Eric G. Webb
  • Multi-station sequential curing of dielectric films
    Patent number: 8629068
    Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
    Type: Grant
    Filed: May 3, 2013
    Date of Patent: January 14, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Krishnan Shrinivasan, Michael Rivkin, Eugene Smargiassi, Mohamed Sabri
  • Precursor vapor generation and delivery system with filters and filter monitoring system
    Patent number: 8628618
    Abstract: A vapor delivery system for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system includes a vapor supply that supplies vapor by vaporizing at least one liquid precursor in a carrier gas. A first path includes a first filter that filters the vapor flowing from the vapor supply to the chamber. At least one second path is parallel to the first path and includes a second filter that filters vapor flowing from the vapor supply to the chamber. A plurality of valves are configured to switch delivery of the vapor to the chamber between the first path and the second path.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: January 14, 2014
    Assignee: Novellus Systems Inc.
    Inventors: Damien Slevin, Brad Laird, Curtis Bailey, Ming Li, Sirish Reddy, James Sims, Mohamed Sabri, Saangrut Sangplug