Abstract: Consistent with an example embodiment, there is semiconductor device assembled to resist mechanical damage. The semiconductor device comprises an active circuit defined on a top surface, contact areas providing electrical connection to the active circuit. There is a pedestal structure upon which the active circuit is mounted on an opposite bottom surface; the pedestal structure has an area smaller than the area of the active device. An encapsulation, consisting of a molding compound, surrounds the sides and the underside of the active device and it surrounds the contact areas. The encapsulation provides a resilient surface protecting the active device from mechanical damage. A feature of the embodiment is that the contact areas may have solder bumps defined thereon.

Abstract: An input/output (IO) circuit including: an IO driver circuit; an electrostatic discharge (ESD) protection semiconductor switch with a first input configured to receive an ESD, a second input connected to an ESD rail, and a switch control input; an ESD trigger circuit connected to the switch control input, wherein the ESD trigger circuit is configured to produce a trigger signal to close the protection semiconductor switch when the ESD detection circuit detects an ESD; and a bias circuit configured to provide a back bias signal to an isolated well of the ESD protection semiconductor switch when IO circuit is in normal operation.

Abstract: According to an aspect of the invention, an aggregator node is conceived for use in a network, wherein said aggregator node is arranged to aggregate encrypted data, and wherein said aggregator node comprises a secure element which is arranged to perform the aggregation of the encrypted data in a secure manner.

Abstract: A method of playing a digital audio signal at a speed different from that at which it was recorded. The method comprises: playing a first segment of the signal; skipping to a second segment that is not contiguous with the first segment; and playing the second segment, wherein at least one of the first and second segment is played at a rate different from the rate at which it was recorded.

Abstract: Embodiments of a linear voltage regulator are described. In one embodiment, the linear voltage regulator includes a PMOS low drop-out (LDO) regulator configured to convert an input voltage to a regulated voltage, a charge pump connected to the PMOS LDO regulator and configured to amplify the regulated voltage into an amplified voltage, and an NMOS LDO regulator connected to the charge pump and configured to convert the amplified voltage into an output voltage. Other embodiments are also described.

Abstract: A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.

Abstract: A system and method for driving a relay circuit involves driving a relay circuit using a first driver circuit if a voltage of a battery supply for the relay circuit is lower than a voltage threshold and driving the relay circuit using a second driver circuit if the voltage of the battery supply for the relay circuit is higher than the voltage threshold.

Abstract: Data security is facilitated. In accordance with one or more embodiments, a target circuit is used to generate encryption information specific to the target circuit. The encryption information is used for generating data corresponding to a key, such as for decrypting media content. In some implementations, encryption information is used together with key data to generate a key offset. The key offset is subsequently used, together with newly-generated encryption information, to obtain the key.

Abstract: A method of manufacturing a MEMS device comprises forming a MEMS device element 14. A sacrificial layer 20 is provided over the device element and a package cover layer 24 is provided over the sacrificial layer. A spacer layer 13 is formed over the sacrificial layer and is etched to define spacer portions adjacent an outer side wall of the sacrificial layer. These improve the hermetic sealing of the side walls of the cover layer 24.

Abstract: A multiple output switching circuit (300) comprising an input (302) configured to receive power from a power source; a first output (304) configured to provide a first output voltage; and an inductor (308) and a power switch (306) connected between the input (302) and first output (304). The power switch (306) is operable to transfer power from the input (302) to the first output (304). The switching circuit further comprising a second output (312) configured to provide a second output voltage; a second switch (310) coupled between the first output (302) and the second output (312); and a second switch controller (314) configured to provide the second switch (310) with a second switch control signal (318) such that power is transferred from the input (302) to the second output (312) when the first output voltage level reaches a first output threshold level.

Abstract: A compensation network for a radiofrequency transistor is disclosed. The compensation network comprises first and second bonding bars for coupling to a first terminal of the RF transistor and a compensation capacitor respectively; one or more bond wires coupling the first and second bonding bars together; and a compensation capacitor formed from a first set of conductive elements coupled to the second bonding bar, the first set of conductive elements interdigitating with a second set of conductive elements coupled to a second terminal of the RF transistor.

Abstract: A resonator device (200) comprises a base (206) comprising an anchor (204) and a vibration unit (212) connected to the anchor (204). The vibration unit (212) is configured to have a first vibration mode (218) and a second vibration mode (216) different from the first vibration mode (218). According to an embodiment, the vibration unit (212) is configured such that the first vibration mode (218) and the second vibration mode (216) destructively interfere at the anchor (204).

Abstract: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140, 610) such as a solder cap, a further semiconductor die or a combination thereof in conductive contact with the solder portion, said solder cap extending over the encapsulation material. A further solder cap (150) may be provided over the first surface. A method of manufacturing such a discrete semiconductor device package is also disclosed.

Abstract: Consistent with an example embodiment, there is a method for preparing integrated circuit (IC) device die from a wafer substrate having a front-side with active devices and a back-side. The method comprises pre-grinding the backside of a wafer substrate to a thickness. The front-side of the wafer is mounted onto a protective foil. A laser is applied to the backside of the wafer, at first focus depth to define a secondary modification zone in saw lanes. To the backside of the wafer, a second laser process is applied, at a second focus depth shallower than that of the first focus depth, in the saw lanes to define a main modification zone, the secondary modification defined at a pre-determined location within active device boundaries, the active device boundaries defining an active device area. The backside of the wafer is ground down to a depth so as to remove the main modification zone. The IC device die are separated from one another by stretching the protective foil.

Abstract: A wireless charging apparatus and method utilizing a secure element is disclosed. Illustratively, a receiver containing a secure element securely communicates with a charging pad also equipped with a secure element. The communication can be used to establish the identity of the receiver and facilitate billing for the wireless charging. The charging pad may further communicate in a secure manner with a server to authenticate the identity and other information about the receiver before providing wireless charging. Direct communication between the receiver and server is also contemplated.

Abstract: Wireless data communication is implemented using respective carrier frequencies. As may be implemented in accordance with one or more embodiments and apparatuses herein, wireless communications are effected using a resonant circuit having a resonant frequency susceptible to detuning. Radio frequency power is transmitted to a remote transponder circuit, and wireless communications are effected with the remote transponder circuit via at least one of first and second different carrier frequencies, using the resonant circuit and the radio frequency power. The first and second carrier frequencies are respectively sufficiently proximate to the resonant frequency, such that signals communicated based on the resonant frequency can be acquired by demodulating based on the resonant frequency. One of the first and second carrier frequencies is selected based upon a signal sent from the transponder circuit.

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bigFET configured to conduct an ESD pulse during an ESD event. The bigFET includes a backgate terminal, a source terminal, and a current distributor connected to the backgate terminal and the source terminal and configured to homogeneously activate a parasitic bipolar junction transistor of the bigFET in response to a current that is generated in the bigFET during the ESD pulse. Other embodiments are also described.

Abstract: As consistent with one or more embodiments, electronic circuitry is characterized to provide an indication of susceptibility of the circuitry to error. As consistent with one or more embodiments, bits corresponding to a circuit component of a circuit design are evaluated using a software program that characterizes a hardware description language representing the circuit components and their interconnectivity. A noise power value is calculated for each bit, and bits are identified as being susceptible to data error based upon the noise power value and a signal-to-noise (SNR) ratio reference value. A characterization of the circuit components (e.g., a quality factor) is provided based upon a number of bits susceptible to data errors.

Abstract: A system for power regulation is provided. The system includes a plurality of regulator stages and a voltage boost circuit configured to provide a source voltage to a difference amplifier of each regulator stage. The difference amplifier of each regulator stage is configured to compare a feedback voltage to an output voltage of a reference generation circuit. Each regulator stage includes a plurality of output transistors driven by an output of the difference amplifier. The system includes a start-up circuit arranged and configured to power the voltage boost circuit the reference generation circuit while operation in a start up mode.

Abstract: A passive keyless system including a base that selectively allows access to a restricted environment through a base transceiver operating with an encrypted link on first and second frequencies, and a base recording element storing base measured movement history information. Also, a passive keyless device with at least one sensor detects a movement property of the device, a device recording element stores movement history information about the device and reflecting the detected movement property, and a device transceiver communicating with the base transceiver, and transmitting to the base transceiver encrypted security information identifying the device in accordance with a passive keyless protocol and/or the movement history information, and an access request element that causes the device transceiver to request access to the base transceiver. The base uses the base measured movement history information and movement history information when allowing access to the restricted environment.