Patents Assigned to OmniVision Technologies
  • Patent number: 10263031
    Abstract: A hybrid-bonded image sensor has a photodiode die with multiple macrocells; each macrocell has at least one photodiode and a coupling region. The coupling regions couple to a coupling region of a macrocell unit of a supporting circuitry die where they feed an input of an amplifier and a feedback capacitor. The feedback capacitor also couples to output of the amplifier, and the amplifier inverts between the input and the output. The method includes resetting a photodiode of the photodiode die; coupling signal from photodiode through the bond point to the supporting circuitry die to a feedback capacitor and to an input of the amplifier, the feedback capacitor also coupled to an inverting output of the amplifier; and amplifying the signal with the amplifier, where a capacitance of the feedback capacitor determines a gain of the amplifier.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: April 16, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Rui Wang, Hiroaki Ebihara, Zheng Yang, Chun-Ming Tang, Chao-Fang Tsai, Tiejun Dai
  • Patent number: 10264200
    Abstract: An example apparatus for random sampling for horizontal noise reduction includes readout circuitry coupled to receive image data from an array of pixels, the readout circuitry including a plurality of sample and hold (S&H) circuits coupled to respective ones of a plurality of bitlines to sample and hold the image data in response to a plurality of S&H control signals, each of the plurality of S&H circuits including an S&H capacitor and an S&H switch. The S&H capacitor samples and holds respective image data, and the S&H switch coupled between a respective bitline and the respective S&H capacitor, and further coupled to receive a respective one of the plurality of S&H control signals to open/close the S&H switch, where each of the plurality of S&H switches are opened to decouple their respective S&H capacitors from the respective bitlines at a different time.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: April 16, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventor: Robert Johansson
  • Patent number: 10256266
    Abstract: A chip-scale image sensor package includes a semiconductor substrate, a transparent substrate, a thin film, and a plurality of conductive pads. The semiconductor substrate has (i) a pixel array, and (ii) a peripheral region surrounding the pixel array. The transparent substrate covers the pixel array, has a bottom substrate surface proximate the pixel array, and a top substrate surface opposite the bottom substrate surface. The thin film is on a region of the top substrate surface directly above both (i) the entire pixel array and (ii) a portion of the peripheral region adjacent to the pixel array. Each of the plurality of conductive pads is located within the peripheral region, and is electrically connected to the pixel array. A portion of each of the plurality of conductive pads is not directly beneath the thin film.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: April 9, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chen-Wei Tsai, Chun-Sheng Fan, Wei-Feng Lin
  • Patent number: 10255968
    Abstract: A dynamic random-access memory (DRAM) for use with a display includes a plurality of capacitive elements coupled to store one or more bits of data, and a plurality of switches where at least one individual switch in the plurality of switches is coupled to an individual capacitive element in the plurality of capacitive elements. A plurality of input/output (I/O) bit lines including 32 or more input/output bit lines is coupled to read out the data from the plurality of capacitive elements. A plurality of column select lines is coupled to enable readout of the plurality of capacitive elements.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: April 9, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jongsik Na, Taehyung Jung
  • Patent number: 10243014
    Abstract: A method of image sensor package fabrication includes forming a cavity in a ceramic substrate, and placing an image sensor in the cavity in the ceramic substrate. An image sensor processor is also placed in the cavity in the ceramic substrate, and the image sensor and the image sensor processor are wire bonded to electrical contacts. Glue is deposited on the ceramic substrate, and a glass layer is placed on the glue to adhere the glass layer to the ceramic substrate. The image sensor processor and the image sensor are disposed in the cavity between the glass layer and the ceramic substrate.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: March 26, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Wei-Feng Lin, Chi-Chih Huang, En-Chi Li
  • Patent number: 10243015
    Abstract: A method for fabricating a photosensor array integrated circuit includes forming an isolation trench by a method comprising depositing a hard mask layer on a [110]-oriented single-crystal silicon substrate wafer, depositing, exposing, and developing a photoresist on the hard mask layer to define photoresist openings of locations for the trenches, dry plasma etching through the photoresist openings to form openings in the hard mask layer of locations for the trenches, and performing an anisotropic wet etch through the openings in the hard mask layer. In particular embodiments, the trenches are lined with P-type silicon, a silicon dioxide dielectric, and an additional oxide layer before being filled with tungsten.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: March 26, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xin Wang, Dajiang Yang, Siguang Ma, Duli Mao, Dyson H. Tai
  • Patent number: 10236320
    Abstract: A method of manufacturing a fractal-edge thin film includes determining an area shape to be covered by the fractal-edge thin film. The method also includes generating a thin-film perimeter based upon the area shape, the thin-film perimeter having a fractal dimension exceeding one. The method also includes determining a photomask perimeter such that a photomask with the photomask perimeter, when used in a photolithography process, yields a fractal-edge thin film with the thin-film perimeter. The method may also include photolithographically etching a thin-film, the thin film having a photoresist layer disposed thereon, the photoresist layer having been exposed through the photomask, wherein the etching results in the fractal-edge thin film.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: March 19, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventor: Oray Orkun Cellek
  • Patent number: 10225468
    Abstract: An imaging system with image data path delay measurement includes (a) a first image sensor chip that includes a pixel array for generating a first image in response to light incident upon the pixel array, and a time mark generator for, upon receiving a time mark command, encoding a signature in the first image to generate a first marked image with the signature and image data from the first image, and (b) an image signal processing chip for processing the first marked image, wherein the image signal processing chip includes a data path delay measurement module for generating the time mark command and estimating image data path delay from the pixel array to the data path delay measurement module based upon time delay between (i) generating the time mark command and (ii) receipt of the signature as part of the first marked image.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: March 5, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventor: Jenny Picalausa
  • Patent number: 10223775
    Abstract: A method for combining array camera images with feature-based ghost removal includes (a) receiving, from an array camera, a first image and a second image respectively captured by a first camera and a second camera of the array camera, (b) rectifying and aligning the first image and the second image, (c) after said rectifying and aligning, identifying features in the first image to produce at least one first feature image each indicating features in the first image, and identifying features in the second image to produce at least one second feature image each indicating features in the second image, (d) comparing the at least one first feature image with the at least one second feature image to determine a ghost mask defining combination weights for combination of the first image with the second image.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: March 5, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sarvesh Swami, Donghui Wu
  • Patent number: 10224364
    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: March 5, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cheng Zhao, Cunyu Yang, Chen-Wei Lu, Zhiqiang Lin
  • Patent number: 10218924
    Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: February 26, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Duli Mao, Hiroaki Ebihara, Kazufumi Watanabe
  • Patent number: 10217789
    Abstract: A chip-scale packaging process for wafer-level camera manufacture includes aligning an optics component wafer with an interposer wafer having a photoresist pattern that forms a plurality of transparent regions, bonding the aligned optics component wafer to the interposer wafer, and dicing the bonded optics component wafer and interposer wafer such that each optics component with interposer has a transparent region. The process further includes dicing an image sensor wafer, aligning the pixel array of each image sensor with the transparent region of a respective optics component with interposer, and bonding each image sensor to its respective optics component with interposer. Each interposer provides alignment between its respective optics component center and its respective pixel array center of the image sensor based on the respective transparent region. The interposer further provides a back focal length for focusing light from the optics component onto a top surface of the pixel array.
    Type: Grant
    Filed: April 6, 2016
    Date of Patent: February 26, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Teng-Sheng Chen, Chia-Yang Chang, Yi Qin
  • Patent number: 10211253
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: February 19, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Qin Wang, Gang Chen, Duli Mao
  • Patent number: 10211243
    Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.
    Type: Grant
    Filed: April 4, 2018
    Date of Patent: February 19, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chia-Chun Miao, Yin Qian, Chao-Hung Lin, Chen-Wei Lu, Dyson H. Tai, Ming Zhang, Jin Li
  • Patent number: 10204951
    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: February 12, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Hsin-Chih Tai, Lindsay Alexander Grant
  • Patent number: 10204947
    Abstract: A cover-glass-free array camera with individually light-shielded cameras includes an image sensor array having a plurality of photosensitive pixel arrays formed in a silicon substrate, and a lens array bonded to the silicon substrate, wherein the lens array includes (a) a plurality of imaging objectives respectively registered to the photosensitive pixel arrays to form respective individual cameras therewith, and (b) a first opaque material between each of the imaging objectives to prevent crosstalk between individual cameras.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: February 12, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Teng-Sheng Chen, Jau-Jan Deng, Chia-Yang Chang, Wei-Feng Lin
  • Patent number: 10199333
    Abstract: A delamination-resistant semiconductor device includes a conductive layer, a semiconductor layer, and a spacer. The conductive layer has a first side opposite a second side. The semiconductor layer is on the first side and defines an aperture therethrough spanned by the conductive layer. The spacer is on the second side and has a top surface, proximate the conductive layer, that defines a blind hole spanned by the conductive layer. A method for preventing delamination of a multilayer structure, includes a step of disposing a first layer on a substrate such that the first layer spans an aperture of the substrate. The method also includes a step of disposing a second layer on the first layer. The second layer has a blind hole adjacent to the first layer such that the first layer spans the blind hole.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: February 5, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Ying-Chih Kuo, Ying Chung
  • Patent number: 10191255
    Abstract: A four-element athermal lens includes four coaxially aligned lenses including a (i) first lens and, in order of increasing distance therefrom and on a same side thereof, (ii) a second lens, a third lens, and a fourth lens. The first lens and the second lens are positive lenses. The third and fourth lenses are negative lenses. The first lens, second lens, third lens, and fourth lens have equal respective refractive indices n1, n2, n3, and n4. A difference between (i) the maximum of n1, n2, n3, and n4 and (ii) the minimum of n1, n2, n3, and n4 being less than 0.05 in a free-space wavelength range. Refractive indices n1, n2, n3, and n4 have respective temperature dependences ? ? ? n 1 ? ? ? T , ? ? ? n 2 ? ? ? T , ? ? ? n 3 ? ? ? T , ? ? ? n 4 ? ? ? T .
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: January 29, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Tingyu Cheng, Jau-Jan Deng
  • Patent number: 10187602
    Abstract: An example method for fast ramp start-up during analog to digital conversion (ADC) includes opening a feedback bypass switch coupled to an amplifier to initiate an ADC operation, providing an injection current pulse to an inverting input of the amplifier, where the non-inverting input is coupled to a feedback bypass switch, integrating a first reference current coupled to the inverting input of the amplifier, where the integrating of the first reference current occurs due to the opening of the feedback bypass switch, and providing a reference voltage in response to the injection current pulse, the integrating of the first reference current, and a reference voltage coupled to a non-inverting input of the amplifier, where a level of the reference voltage is increased at least at initiation of the ADC operation in response to the injection current pulse.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: January 22, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Fan Zhu, Yu-Shen Yang, Yingkan Lin, Zejian Wang, Liping Deng
  • Patent number: 10185406
    Abstract: A method for generating a control signal to control an information technology device includes the following steps: (1) capturing, using an image sensor, a current control image of a light source of a remote controller positioned within a field of view of the image sensor; (2) identifying, within the current control image, a current location of light emitted from the light source; (3) determining movement between (a) the current location of the light emitted from the light source and (b) a previous location of the light emitted from the light source determined from a previously captured image; (4) generating a movement control signal based upon the movement; and (5) sending the movement control signal to the information technology device. The method is executed, for example, by a movement control module of an information technology device input system.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: January 22, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jin Li, Jizhang Shan