Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.

Abstract: A method of processing an image sensor system, comprising steps of placing a first cover member on top of an image sensor; coating the image sensor and the first cover member with a dark coating agent; removing the first cover member from the image sensor; placing a second cover member on top of the image sensor; affixing the image sensor on to a permanent mount to form an electrical coupling between the image sensor and the permanent mount; removing the second cover member from the image sensor; wherein the first cover member completely covers a top portion of the image sensor; and wherein the second cover member includes an internal rib configured to form a contact seal with the image sensor.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of isolation structures disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures electrically isolate individual photodiodes in the plurality of photodiodes. A plurality of transistors are disposed proximate to the plurality of photodiodes and include a reset transistor, an amplifier transistor, and a row select transistor. An active region and a gate electrode of at least one transistor in the plurality of transistors are vertically aligned with an isolation structure in the plurality of isolation structures.

Abstract: A bezel for die level packaging of a camera module may include (a) a recessed lip surrounding an aperture of the bezel and facing in a first direction, wherein the recessed lip is configured for seating thereon an image sensor, and (b) a planar rim surrounding the aperture and facing in a second direction opposite the first direction, wherein the planar rim is configured for bonding thereto a wafer-level lens unit implementing a wafer-level lens for delivering light to the image sensor through the aperture, wherein transverse extent of the planar rim across the aperture in a dimension orthogonal to the first direction exceeds corresponding transverse extent of the recessed lip.

Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters.

Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.

Abstract: A photodiode is adapted to accumulate image charges in response to incident light. The accumulate image charges are transferred to a floating diffusion, amplified, row selected and the amplified row selected signal is output to a bitline. A bitline enable transistor is coupled to link between the bitline and a bitline source node. A current source is coupled to connect between the bitline source node and a ground. The current source generator sinks adjustable current from the bitline source node to the ground through a cascode transistor and a bias transistor. A cascode hold capacitor is coupled between the cascode control voltage and the ground. A bias hold capacitor is coupled between the bias control voltage and the ground. A bias boost driver is coupled to control the cascode control voltage and the bias control voltage.

Abstract: A liquid crystal display device includes a first substrate, a pixel array formed on the first substrate, a transparent substrate, a liquid crystal layer disposed between the pixel array and the transparent substrate, a transparent electrode disposed between the transparent substrate and the liquid crystal layer, and an input electrode. The transparent electrode has a longer first edge and an orthogonal shorter second edge. The input electrode extends along, and is electrically coupled along, the first edge of the transparent electrode and has lower impedance than a portion of the transparent electrode overlying the pixel array. The input electrode can include additional portion(s) that extend along, and that are electrically-coupled along, the other edges of the transparent electrode. The input electrode reduces the common voltage propagation delay across the transparent electrode and improves reduces intensity variation over the display area, even for high-frequency common voltage waveforms.

Abstract: Image sensors with precharge boost are disclosed herein. An example image sensor may include pixels that each include a photodiode to receive image light and produce image charge in response, a floating diffusion to receive the image charge, a transfer gate to couple the photodiode to the floating diffusion in response to a transfer control signal, a reset gate to couple a reset voltage to the floating diffusion in response to a reset control signal, and a boost capacitor coupled between the floating diffusion and a boost voltage source, wherein, during a precharge operation, the boost voltage is provided to the boost capacitor for a portion of time the transfer gate is enabled and while the reset gate is disabled.

Abstract: Methods and apparatuses for data transmission in an image sensor are disclosed herein. An example data transmission circuit may include a plurality of transmission banks coupled in series with a first one of the plurality of transmission banks coupled to function logic, where each of the plurality of transmission banks are coupled to provide image data to a subsequent transmission bank in a direction toward the function logic in response to a clock signal, a plurality of delays coupled in series, wherein each of the plurality of delays is associated with and coupled to a respective transmission bank of the plurality of transmission banks, and wherein the clock signal is received by each of the plurality of transmission banks after being delayed by a respective number of delays of the plurality of delays in relation to the function logic.

Abstract: An apparatus and method for a low dark current floating diffusion is discussed. An example method includes coupling a photodiode to a floating diffusion through a transfer gate where a gate terminal of the transfer gate is provided a first voltage, resetting the floating diffusion, repetitively sampling image charge on the photodiode a plurality of times, where the sampled image charge is coupled to the floating diffusion, and where the gate terminal of the transfer gate is provided a second voltage less than the first voltage during each sampling of the image charge, while repetitively sampling the image charge, coupling an additional capacitance to the floating diffusion, where a first capacitance voltage is applied to the additional capacitance during the sampling, and performing correlated double sampling of the sampled image charge.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

Abstract: A camera system has a lens focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array. An image processor captures at least a first image with the deflector system in a first position and a second image with the deflector system in a second position to provide a focal point offset in a first axis on the photosensor array, and the firmware is configured to prepare an enhanced image from at least the first and second images. A method of imaging includes focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array; receiving at least a first image with the deflector system in a first position; receiving a second image with the deflector system configured providing a focal point offset on the photosensor array; and preparing an enhanced image from the first and second images.

Abstract: A lane departure warning system includes a memory and a processor for validating a candidate region as including an image of a lane marker on the road is disclosed. The candidate region is identified within a latest road image of a temporal sequence of road images captured from the front of a vehicle traveling along a road. The memory stores non-transitory computer-readable instructions and adapted to store the road image. The image processor is adapted to execute the instructions to, when no previously-verified region and no previously-rejected region aligns with the candidate region: (i) determine a minimum distance between the candidate region and a previously-verified region of a previously-captured road image of the sequence, (ii) when the minimum distance exceeds a threshold distance, store the candidate region as a verified region, and (iii) when the minimum distance is less than the threshold distance, store the candidate region as a rejected region.

Abstract: A lane detection system includes a non-volatile memory storing machine-readable instructions and an image processor capable of receiving a road image. The image processor, when executing the machine-readable instructions, is capable of: (i) processing the road image to identify a lane candidate within a lane-existing region of the road image, the lane-existing region having (a) a near subregion including an imaged road region nearer to the vehicle and (b) a far subregion including an imaged road region farther from the vehicle, (ii) verifying the lane candidate as a true lane candidate when a minimum distance between (a) a line fit to a portion of the lane candidate in the near subregion and (b) a predetermined reference point in the road image is less than a neighborhood distance; and (iii) extending the true lane candidate into the far subregion to form a detected lane marker demarcating the lane marker.

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

Abstract: In an embodiment, a slim imager is disclosed. The slim imager includes a substrate including an aperture, an image sensor, and an optics unit. The image sensor is on a bottom side of the substrate, spans the aperture, and has an aperture-facing top surface. The optics unit is on a top side of the substrate, spans the aperture, and includes a transmissive optical element having an aperture-facing bottom surface. A volume partially bound by the aperture-facing top surface and the aperture-facing bottom surface has a refractive index less than 1.01 at visible wavelengths.

Abstract: Apparatuses and method for an image sensor with increased analog to digital conversion range and reduced noise are described herein. An example method may include disabling a first auto-zero switch of a comparator, the first auto-zero switch coupled to auto-zero a reference voltage input of the comparator, adjusting an auto-zero offset voltage of a ramp voltage provided to the reference voltage input of the comparator, and disabling a second auto-zero switch of the comparator, the second auto-zero switch coupled to auto-zero a bitline input of the comparator.