Abstract: A display system includes a pixel array, a data buffer and a display driver. In a particular embodiment the data buffer receives and stores frames of image data and provides the frames of image data to the pixel array. The display driver overwrites an entire frame of image data on the data buffer during some frame times and selectively overwrites a portion of a frame of image data, leaving another portion of the frame of image data in the data buffer, during other frame times.

Abstract: A stacked-lens assembly includes a lower substrate and an upper substrate. The lower substrate includes a lower-substrate top surface having thereon a lower element and an inner spacer, the inner spacer at least partially surrounding the lower element. The upper substrate includes an upper-substrate bottom surface opposite the lower-substrate top surface and having thereon an upper element and an outer spacer, the outer spacer (i) being attached to the inner spacer and (ii) at least partially surrounding the upper element. In any cross-section of the stacked-lens assembly parallel to the upper substrate and including both the inner spacer and the outer spacer, the entirety of the inner spacer is within a perimeter of the outer spacer.

Abstract: A method for removing a ghost artifact from a multiple-exposure image of a scene method includes steps of generating and segmenting a difference mask, determining a lower threshold and an upper threshold, generating a refined mask, and generating a corrected image. The difference mask includes a plurality of absolute differences in luminance-values between the multiple-exposure image and a first image of the scene. The segmenting step involves segmenting the difference mask into a plurality of blocks. The lower and upper thresholds are based on statistical properties of the blocks. The method generates the refined mask by mapping each absolute difference to a respective one of a plurality refined values, of the refined mask, equal to a function of the absolute difference, the lower threshold, and the upper threshold. The corrected image is a weighted sum of the first image and the multiple-exposure image, weights being based on the refined mask.

Abstract: A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed.

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.

Abstract: An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface. The semiconductor material includes silicon and germanium, and the germanium concentration increases in a direction of the non-illuminated surface. A plurality of isolation regions is disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

Abstract: A wide-angle camera and fabrication method thereof includes a sensor with a plurality of pixel sub-arrays and an array of optical elements on a first side of a substrate. Each of the optical elements is capable of forming an image from a field of view onto a different one of the pixel sub-arrays. The wide-angle camera also includes an array of achromatic doublet prisms on a second side of the substrate, where each of the achromatic doublet prisms is aligned to provide a viewing angle with a different one of the optical elements. The sensor captures a wide-angle field of view while having a compact format.

Abstract: A spread-spectrum clock generator has a phase-locked loop locked to a reference signal that gives a stable-frequency output to a variable phase shifter. The variable phase shifter provides a spread-spectrum clock output because its phase-shift is determined by a pseudorandom sequence generator and the pseudorandom sequence generator changes its output regularly or irregularly within limits. The clock generator performs a method of generating a spread-spectrum clock including locking the phase-locked loop to the reference signal, and phase shifting the stable frequency signal by a phase-shift determined by the pseudorandom sequence generator; and changing the phase-shift determined by the pseudorandom sequence generator. Since phase shifting is performed open-loop, total phase shift is defined by design.

Abstract: A two-surface narrow field-of-view (FOV) compound lens for producing an image of an object at an image plane of an imaging system includes a biplanar substrate between a plano-convex lens and a plano-concave lens having a common optical axis. The plano-convex lens has a first planar surface on a first side of the biplanar substrate and is formed of a material having a first Abbe number. The plano-concave lens has a second planar surface on a second side of the biplanar substrate opposite the first side, and is formed of a material having a second Abbe number less than the first Abbe number. The first and second lens have respective focal lengths F1 and F2 that may satisfy ?1.4<F2/F1 <?0.9. The compound lens may have a total track length T and an effective focal length feff such that their ratio satisfies 0.88<T/feff<0.98.

Abstract: An imaging system includes an image sensor configured to capture a sequence of images including at least one low dynamic range (LDR) image and at least one high dynamic range (HDR) image. The imaging system also includes readout circuitry. The readout circuitry is coupled to read out image data captured by the image sensor. A processor is coupled to the readout circuitry to receive image data corresponding to the at least one LDR image and image data corresponding to the at least one HDR image. The processor is configured to combine high frequency image data extracted from image data corresponding to the at least one LDR image with low frequency image data extracted from image data corresponding to the at least one HDR image to form a composite image.

Abstract: A four-surface narrow field-of-view compound lens includes a first biplanar substrate between a first lens and a second lens, the first lens being plano-convex and the second lens being plano-concave. The compound lens also includes a second biplanar substrate between a third lens and a fourth lens, the third lens being plano-convex and the fourth lens being plano-concave. The second lens and third lens are between the first biplanar substrate and the second biplanar substrate. The first lens, second lens, third lens, and fourth lens are coaxial and are formed of materials having a first, second, third, and fourth Abbe number respectively and focal lengths F1, F2, F3, and F4 respectively. The first Abbe number exceeds the second Abbe number and the third Abbe number exceeds the fourth Abbe number. Ratio F1/F2 may satisfy ?0.32<F1/F2<?0.18 and ratio F4/F3 may satisfy ?0.72<F4/F3<?0.48.

Abstract: A pixel circuit includes a transfer transistor coupled between a photodiode and a floating diffusion to transfer image charge to the floating diffusion. A precharge offset signal is representative of a difference between a row that includes the transfer transistor and a different row that is being read out. The selection circuit is coupled to select between first and second transfer control signals to control the transfer transistor. The selection circuit is coupled to output the first transfer control signal in response to a precharge enable signal during a read out operation of the different row. The precharge enable signal is generated in response to a comparison of a precharge offset signal and an exposure value signal. The selection circuit is coupled to output the second transfer control signal in response to a sample enable signal during a read out operation of the row that includes the transfer transistor.

Abstract: A photodetector includes a first doped region disposed in a semiconductor material and a second doped region disposed in the semiconductor material. The second doped region is electrically coupled to the first doped region, and the second doped region is of an opposite majority charge carrier type as the first doped region. The photodetector also includes a quantum dot layer disposed in a trench in the semiconductor material, and the quantum dot layer is electrically coupled to the second doped region. A transfer gate is disposed to permit charge transfer from the second doped region to a floating diffusion.

Abstract: An avalanche photodiode sensor includes a plurality of avalanche photodiodes disposed in a semiconductor material where individual avalanche photodiodes in the plurality of avalanche photodiodes have an internal electric field parallel with a first surface of the semiconductor material. The individual avalanche photodiodes in the plurality of avalanche photodiodes include a p-doped semiconductor region which extends into the semiconductor material, and an n-doped semiconductor region which extends into the semiconductor material. The internal electric field extends between the p-doped semiconductor region and the n-doped semiconductor region. Processing methods as examples are also proposed.

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material and a floating diffusion disposed proximate to the photodiode in the first semiconductor material. A source follower transistor is disposed in part in a second semiconductor material and includes: a first doped region, a third doped region, and a second doped region with an opposite polarity as the first doped region and the third doped region, and a gate electrode coupled to the floating diffusion and disposed in the first semiconductor material and aligned with the second doped region in the second semiconductor material of the source follower transistor.

Abstract: An example current generator may include a low dropout regulator (LDO) coupled to receive a reference voltage and provide a reference current in response, where the LDO adjusts a current level of the current reference in response to a calibration signal. A current controlled oscillator coupled to receive a reference current copy from the LDO and generate an oscillating signal in response, where a period of the oscillating signal is based at least in part on a level of the reference current copy. A pulse generator coupled to provide an adjustable pulse signal. A counter coupled to determine a number of periods of the oscillating signal occurring during a duration of the pulse signal, and provide a control signal indicative of such, and a digital calibration circuit coupled to receive the control signal and provide the calibration signal to the LDO in response.

Abstract: In one aspect, a method includes providing a lens substrate having an array of lenses. The lens substrate includes an overflow region next to each lens of the array. Each overflow region includes an overflow lens material. The method also includes separating the lens substrate into a plurality of smaller lens substrates. Each of the smaller lens substrates has one of the single lens and the plurality of stacked lenses. Separating the lens substrate into the smaller lens substrates may include removing or substantially removing the overflow regions. In one aspect, the method may be performed as a method of making a miniature camera module. Other methods are also described, as are miniature camera modules.

Abstract: An EMI shield for a camera module subassembly includes a first conductive portion covering an optical unit and a top surface of a circuit substrate of the camera module subassembly and a second conductive portion covering a bottom surface of the circuit substrate, such that the two portions are in contact. The EMI shield can also include an extension to cover a flexible circuit substrate and its connector, as well as can include an EMI attenuator over an aperture formed in the first conductive portion above the optical unit. The EMI shield of the invention provides improved EMI shielding and EM compatibility at the camera module packaging level, especially for frequencies in the megahertz and gigahertz range, by shielding substantially all of the camera module subassembly.

Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.