Abstract: Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).

Abstract: Techniques are disclosed for providing light-based communication (LCom) between a receiver device and one or more transmitting LCom-enabled luminaires. In accordance with some embodiments, LCom data to be transmitted may be allocated over multiple colors of light output by multiple LCom-enabled luminaires and transmitted in parallel across the multiple colors of light using a time division multiple access (TDMA) scheme. In some cases, the disclosed techniques can be used, for example, to allow for multiple LCom-enabled luminaires to communicate simultaneously over multiple active LCom channels with a single receiver device. In some instances, the disclosed techniques may be used, for example, to provide channel redundancy that facilitates successful completion of LCom data transmission when an LCom channel is broken. In some instances, the disclosed techniques may be used, for example, to provide more accurate positioning for indoor navigation.

Abstract: An optoelectronic component includes a carrier substrate; at least one light emitting semiconductor chip arranged on a surface of the carrier substrate; and a frame part at least laterally partly surrounding the light emitting semiconductor chip; and comprising an injection-molded body, and wherein the frame part includes an injection-molded body and a diaphragm part, the diaphragm part including a protuberance enclosed by the injection-molded body.

Abstract: An optoelectronic semiconductor component includes a luminescent diode chip including a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation, and a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and the filter element consists of a II-VI compound semiconductor material.

Abstract: A radiation-emitting device includes a substrate; and at least one layer sequence arranged on the substrate that generates electromagnetic radiation, including at least one first electrode area, at least one second electrode area, and at least one functional layer between the first electrode area and the second electrode area, wherein the functional layer generates electromagnetic radiation in a switched-on operating state, and at least one removal region is arranged between at least two points of the first electrode area conductively connected to one another by the first electrode area, the first electrode area being at least partly removed in the at least one removal region.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components (1), comprising the following steps: a) providing a semiconductor layer sequence (2) having a plurality of semiconductor body regions (200); b) providing a plurality of carrier bodies (3), which each have a first contact structure (31) and a second contact structure (32); c) forming a composite (4) having the semiconductor layer sequence and the carrier bodies in such a way that adjacent carrier bodies are separated from one another by interspaces (35) and each semiconductor body area is electrically conductive connected to the first contact structure and the second contact structure of the associated carrier body; and d) separating the composite into the plurality of semiconductor components, wherein the semiconductor components each have a semiconductor body (20) and a carrier body. The invention further relates to an optoelectronic semiconductor component (1).

Abstract: In at least one embodiment of the method, the method is used to produce optoelectronic semiconductor components. A lead frame assemblage includes a plurality of lead frames. The lead frames each includes at least two lead frame parts and the lead frames in the lead frame assemblage are electrically connected to one another by connecting webs. The lead frame assemblage is fitted on an intermediate carrier. At least a portion of the connecting webs is removed and/or interrupted. Additional electrical connecting elements are fitted between adjacent lead frames and/or lead frame parts. A potting body mechanically connects the lead frame parts of the individual lead frames to one another. The resulting structure is singulated to form the semiconductor components.

Abstract: Various embodiments may relate to a lighting device, including an excitation radiation source and a two-sided luminescent-material wheel. At least one luminescent material is provided on each of the two sides of the two-sided luminescent-material wheel, thus both on the front side and on the opposite back side. The luminescent materials on both sides are excited sequentially in time. For this purpose, at least one transmissive region is provided in the rotating luminescent-material wheel, through which transmissive region the excitation radiation can radiate, which excitation radiation can be deflected onto the luminescent material on the back side by means of an optical unit.

Abstract: The invention relates to an optoelectronic semiconductor component (1) comprising:—an optoelectronic semiconductor chip (2), comprising—a growth substrate (21) having a growth surface (21a),—a layer sequence (22) with a semiconductor layer sequence (221, 222, 223) with an active zone (222) grown on the growth surface (21a),—contact points (29) for electrically contacting the semiconductor layer sequence (221, 222, 223) and—and insulation layer (26), which is formed in an electrically insulting manner—a connection carrier (4), which is mounted to the cover surface (2a) of the optoelectronic semiconductor chip facing away from the growth surface (21a), wherein—the semiconductor layer sequence (221, 222, 223) is connected to the connection carrier (4) in an electrically conducting manner and—a conversion layer (5) is applied to a bottom surface (21c) of the growth substrate (21) facing away from the growth surface (21a) and to all side surfaces (21b) of the growth substrate (21).

Abstract: A method of producing a partial luminaire includes arranging at least one semiconductor chip that emits electromagnetic radiation on a substrate, and applying an elastic waveguide, disposed downstream of the at least one semiconductor chip in an emission direction, such that the elastic waveguide projects at at least one of its side surfaces beyond the substrate.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor that is partly embedded into a shaped body, which is formed from a molding compound that at least partly covers at least two lateral faces and the rear surface of the optoelectronic semiconductor chip. A first contact layer and a second contact layer are arranged on the shaped body and are electrically connected to the optoelectronic semiconductor chip. A mounting face is arranged transversely in relation to the radiation passage face and is provided for mounting the optoelectronic semiconductor component.

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Abstract: An optical element includes a light guide plate with a first major surface and with a second major surface opposite the first major surface and with side faces connecting the first and second major surfaces, wherein the light guide plate includes a matrix material transparent to ultraviolet light in which scattering centers are embedded, at least one light-emitting semiconductor device that couples ultraviolet light into the light guide plate via a side face when in operation, a first filter layer on the first major surface and a second filter layer on the second major surface, wherein the filter layers opaque to ultraviolet light and at least partially transparent to visible light, and a first photochromic layer at least on the first major surface, between the light guide panel and the first filter layer, with a transparency to visible light by ultraviolet light.

Abstract: A lighting device includes a light source including at least two light-emitting diode chips which emit light of mutually differing colors when in operation, and an optical element in the form of a solid body made from a dielectric material including a radiation entrance face facing towards the light-emitting diode chips, a radiation exit face remote from the light-emitting diode chips, and a circumferential face connecting the radiation entrance face and the radiation exit face to one another, wherein the circumferential face is reflective to the light emitted by the light-emitting diode chips when in operation, and the radiation entrance face and/or the radiation exit face is/are non-planar at least in places, wherein a gap, which is filled with a gas, is arranged between at least one of the light-emitting diode chips of the light source and the radiation entrance face, and the optical element is a sole optical element of the lighting device, which optical element is arranged downstream of all light-emitting

Abstract: An organic light-emitting component (100) is specified, which comprises a carrier (1) and an organic layering sequence (2) arranged on the carrier (1). The organic layering sequence (2) comprises at least two organic layers, wherein at least one of the organic layers is designed as an emitting layer (23). The emitting layer (23) emits light (200) of a first wavelength range, which has an intensity maximum at a first wavelength. Further, the organic light-emitting component (100) comprises an anode (3) and a cathode (4) which provide the electrical contacting of the organic layering sequence (2). Further, the organic light-emitting component (100) has at least one nanoparticle layer (20), wherein one nanoparticle layer (20) is an organic layer of the organic layering sequence (2) provided with first nanoparticles (5). The first nanoparticles (5) have a refractive index (nN) that is smaller than at least one refractive index of an organic material of one of the organic layers.

Abstract: Flexible light engines capable of being cut, and methods thereof, are provided. A cuttable flexible light engine includes a flexible strip and strings of solid state light sources coupled in parallel. A voltage balancer establishes a desired current flow through the strings of solid state light sources when the flexible strip is cut to a desired length, and may be part of a connector placed where the strip is cut. The strings may be provided in a first set of strings coupled in parallel between a first conductive path and an intermediate conductive path and a second set of strings coupled in parallel between the intermediated conductive path and a second conductive path. A cuttable flexible light engine may also include test points positioned within the strings.

Abstract: An optoelectronic module (100) is defined, comprising at least one semiconductor chip (10) provided for emitting electromagnetic radiation and at least one holding device (20) which is adapted to fix in place a device (50) for encoding at least one optical or electronic parameter of the optoelectronic module (100). Furthermore, a process for the production of the optoelectronic module (100) is defined.

Abstract: Various embodiments relate to a lens for omnidirectional illumination being rotationally symmetrical and including a light incident surface, a first refractive surface, a first reflective surface, a second refractive surface, and a third refractive surface. A first portion of light which passed through the light incident surface is refracted by the first refractive surface to produce first emergent light. A second portion of the light which passed through the light incident surface is reflected by the first reflective surface to the second refractive surface, and then is refracted by the second refractive surface to produce second emergent light. A third portion of the light which passed through the light incident surface is refracted by the third light refractive surface to produce third emergent light, the first emergent light, the second emergent light and the third emergent light jointly achieved omnidirectional illumination.

Abstract: A method of producing a conversion element includes providing a substrate having a surface; forming a first mask structure above the surface, wherein the first mask structure has first webs and first openings arranged between the first webs and the first openings form cavities in which the surface of the substrate is accessible; arranging a second mask structure above the first mask structure, wherein the second mask structure has second webs and second openings arranged between the second webs, the first webs are at least partly covered by the second webs, and the cavities remain at least partly accessible through the second openings; spraying a material into the cavities through the second openings; removing the second mask structure; and removing the first mask structure.

Abstract: A radiation emitting apparatus including a substrate, at least one layer sequence arranged on the substrate and producing electromagnetic radiation in a wavelength range, having at least one first electrode surface, at least one second electrode surface, and at least one functional layer between the first electrode surface and the second electrode surface, wherein the functional layer produces electromagnetic radiation in the wavelength range in a switched-on operating state, and a scatter layer having a first region and a second region, wherein radiation produced by the functional layer is directly incident on the scatter layer only in the first region of the scatter layer, and the scatter layer at least partially scatters radiation incident upon the first region of the scatter layer so that said radiation enters the second region of the scatter layer.