Abstract: Various embodiments may relate to a process for producing an optoelectronic component. In the process, a carrier is provided. A first electrode is formed upon the carrier. An optically functional layer structure is formed upon the first electrode. A second electrode is formed upon the optically functional layer structure. At least one of the two electrodes is formed by disposing electrically conductive nanowires on a surface on which the corresponding electrode is to be formed, and by heating the nanowires in such a way that they plastically deform.

Abstract: A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

Abstract: A lighting device comprising light radiation sources (12a, 12b, 12c, 12d) arranged in a plurality of cells (CI, C2, C3, C4) wherein each cell comprises at least one light radiation source, an output screen (16) for receiving light radiation from said light radiation sources (12a, 12b, 12c, 12d), and optical elements (18, 20) arranged between said cells (CI, C2, C3, C4) and said screen (16) so as to convey onto said screen (16) with a uniformly distributed intensity the light radiation produced by said light radiation sources (12a, 12b, 12c, 12d), the illumination of said screen (16) resulting from the superimposition of light radiation individually produced by the cells of said plurality (CI, C2, C3, C4).

Abstract: An optoelectronic component includes a carrier having an upper side which includes a first subarea and a second subarea, wherein the first subarea and the second subarea have different optical properties, and a method of producing an optoelectronic component includes providing a carrier having an upper side which includes a first subarea and a second subarea, and changing an optical property in the first subarea or in the second subarea.

Abstract: A light module may include a conversion means, which is designed to absorb excitation radiation having a first wavelength of an absorption spectrum and to convert it into light having a second wavelength of an emission spectrum. The light module includes an excitation radiation source designed to emit excitation radiation. The excitation radiation source is arranged in such a way that emitted excitation radiation can be radiated at least indirectly onto the conversion means. The light module includes a spectral filter having a long-pass filter characteristic and having a limiting wavelength. The spectral filter is designed and arranged to reduce the emission spectrum having the second dominant wavelength to the output spectrum having the first dominant wavelength. The conversion means has an emission spectrum having a red spectral component and having a second dominant wavelength and having a full width at half maximum of at least 120 nm.

Abstract: A light source arrangement is provided. The light source arrangement may include a plurality of semiconductor laser light sources arranged in such a way that the laser light emitted by the semiconductor laser light sources is aligned in parallel, and a deflection unit configured to collect and influence all beam paths of the laser light emitted by the semiconductor laser light sources so as to form a beam. The deflection unit has a first mirror element with a concavely curved surface, which is embodied to capture and reflect the laser light emitted by the semiconductor laser light sources by the surface. The light source arrangement may further include a second mirror element with a convexly curved surface, which is embodied to capture and focus the laser light reflected by the first mirror element.

Abstract: In various embodiments, an optoelectronic component is provided. The optoelectronic component may include a first electrode having a first electrically conductive substance, a second electrode having a second electrically conductive substance, and at least one active substance. The active substance is formed within a current path of the first electrode and/or the second electrode, and the active substance is set up to convert the first electrically conductive substance and/or the second electrically conductive substance to an electrically nonconductive substance or region.

Abstract: An optoelectronic component includes a composite body including a molded body; and an optoelectronic semiconductor chip embedded into the molded body, wherein the optoelectronic semiconductor chip includes a first electrical contact on its top side, a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact, a second top side metallization is arranged on the top side of the composite body and electrically insulated with respect to the first top side metallization, the second top side metallization completely delimits a part of the top side of the optoelectronic semiconductor chip, and a wavelength-converting material is arranged in a region completely delimited by the second top side metallization on the top side of the composite body, the wavelength-converting material extending as far as the second top side metallization.

Abstract: An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

Abstract: An optoelectronic component and a method for the producing an optoelectronic component are disclosed.

Abstract: Systems, methods, and computer program products for remote configuration of one or more power supplies, particularly lighting power supplies, are disclosed. A configuration signal that includes a setting for a parameter is generated and then transmitted to a power supply. The power supply decodes the configuration signal and, if one or more certain conditions are met, configures the power supply according to information provided in the configuration signal.

Abstract: An optoelectronic assembly includes an optoelectronic component having a surface light source for emitting a light on a substrate which is at least partly transmissive for the light emitted by the surface light source, wherein the optoelectronic component includes at least one first main emission surface and a second main emission surface wherein the second main emission surface is situated opposite the first main emission surface, and a reflective structure which is arranged at least partly in the beam path of the light emitted by the surface light source and is designed to reflect at least part of the light impinging on the reflective structure in the direction of the substrate, such that a laterally offset image of the surface light source is generatable. The reflective structure and the optoelectronic component are arranged at a distance from one another in a range of approximately 1 mm to approximately 1000 mm.

Abstract: Various embodiments may relate to an optoelectronic component. The optoelectronic component may include a planar optically active structure and an electric circuit structure. The planar optically active structure is designed to receive and/or provide electromagnetic radiation. The electric circuit structure is designed such that it provides an output value. The output value is dependent on at least one operational parameter of the optically active structure.

Abstract: In various embodiments, a connector for lighting devices including an elongate planar support member having a front surface with electrically conductive lines and at least one electrically-powered light radiation source thereon, is provided. The connector includes a C-shaped body having a web portion and two side portions, said C-shaped body locatable astride said planar support member with said web portion facing said front surface, and electrical contact means extending from said web portion between said side portions configured to contact electrically conductive lines on said front surface of said planar support member.

Abstract: An edge-emitting semiconductor laser includes a semiconductor structure having a waveguide layer with an active layer, the waveguide layer extending in a longitudinal direction between first and second side facets of the semiconductor structure, the semiconductor structure has a tapering region adjacent to the first side facet, a thickness of the waveguide layer in the tapering region increases longitudinally, the waveguide layer is arranged between first and second cladding layers, a thickness of the second cladding layer in the tapering region of the semiconductor structure increases longitudinally, the tapering region includes first and second subregions, the first subregion is arranged closer to the first side facet than the second subregion, thickness of the waveguide layer increases longitudinally in the first subregion, thickness of the waveguide layer is constant in the longitudinal direction in the second subregion, and thickness of the second cladding layer increases longitudinally in the second sub

Abstract: Various embodiments may relate to a drive circuit of an illumination device. The drive circuit has an output terminal connected to a load of the illumination device. The drive circuit includes a power supply, a boost control unit connected to an output terminal of the power supply, a main control unit connected to the boost control unit, and a load current control unit connected between the main control unit and the load, and including a switch unit. The switch unit includes a first sub switch unit, which is configured to switch according to a dimming control signal from the main control unit, and further includes a second sub switch unit connected to the first sub switch unit. The second sub switch unit is configured to be turned on in a situation where the first sub switch unit is turned on so as to turn off the first sub switch unit.

Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.

Abstract: An optoelectronic assembly including an optically active region configured for emitting and/or absorbing light, and an optically inactive region configured for component-external contacting of the optically active region is provided. The optically inactive region includes a dielectric structure and a first electrode on or above a substrate, an organic functional layer structure on the first electrode in physical contact with the first electrode and the dielectric structure, and a second electrode in physical contact with the organic functional layer structure and above the dielectric structure, wherein the organic functional layer structure at least partly overlaps the dielectric structure in such a way that the part of the second electrode above the dielectric structure is free of a physical contact of the second electrode with the dielectric structure.