Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

Abstract: Disclosed herein are wavelength converters and methods for making the same. The wavelength converters include a single layer of a polymeric matrix material, and one or more types of wavelength converting particles. In some embodiments the wavelength converters include first and second types of wavelength converting particles that are distributed in a desired manner within the single layer of polymeric matrix material. Methods of forming such wavelength converters and lighting devices including such wavelength converters are also disclosed.

Abstract: A radiation emitting semiconductor chip is disclosed. Embodiments provide a semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization. A lattice structure acts as a waveplate or polarization filter and causes an increase in one radiation component relative to the other radiation component in the radiation emitted by the semiconductor chip through an output side. Therefore, the semiconductor chip emits polarized radiation, which has the polarization of the amplified radiation component. The attenuated radiation component remains in the semiconductor chip an optical structure, which converts the polarization of at least part of the attenuated radiation component remaining in the semiconductor chip to the polarization of the amplified radiation component, and a reflective rear side opposite the output side.

Abstract: A method for passing an electrical cable through a hole in a housing of a unit of electrical equipment is provided. The method may include: fitting onto the cable a tubular, mushroom-shaped male member comprising a stem with a threaded portion and a portion with enlarged head; inserting into the hole the cable having the male member fitted thereon extending through said hole with said portion with enlarged head abutting against the periphery of the hole externally to the housing and said threaded portion protruding inside the housing; and retaining said male member in the hole by coupling with said threaded portion that protrudes inside the housing an annular female member in the form of a nut co-operating with the periphery of the hole inside said housing to counter the movement of the female member with respect to the housing.

Abstract: In various embodiments, an optoelectronic assembly may include at least one organic light emitting diode including a first light emitting diode element and a second light emitting diode element, and an electronic circuit. The first light emitting diode element and the second light emitting diode element are electrically connected in parallel and are deposited monolithically on a common substrate, and the electronic circuit is designed to compare an electric current through the first light emitting diode element that flows during operation with an electric current through the second light emitting diode element that flows during operation and, depending on the comparison, to detect a short circuit of the first light emitting diode element or of the second light emitting diode element and to initiate an electrical switching off of one of the light emitting diode elements and/or of the assembly.

Abstract: A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0?b?1 and 0?c? and 0?d?1 and 0?e?1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.

Abstract: Various embodiments may relate to a drive circuit for an illuminating device and an illuminating device including the drive circuit. The drive circuit includes a main control unit, configured to control power supply to a light-emitting unit, an output unit, connected with the main control unit and comprising a first output terminal and a second output terminal which supply power to the light-emitting unit, and a detecting unit, connected with the output unit for detecting a hot-plug state to obtain a detecting state, wherein the main control unit controls the power supply to the light-emitting unit according to the detecting state.

Abstract: A semiconductor apparatus with an optoelectronic device and a further device is disclosed. Embodiments of the invention provide a semiconductor apparatus with an optoelectronic device and a further device, wherein the optoelectronic device and the further device are interconnected to one another in parallel when the semiconductor apparatus is in operation, wherein the optoelectronic device is connected to a first contact and a second contact, the first contact and the second contact being configured to externally contact the semiconductor apparatus, and wherein the further device is connected with at least one further contact of the semiconductor apparatus.

Abstract: Various embodiments may relate to a synchronous rectifier including at least one rectifier cell, to which power is supplied via a secondary winding of a transformer arranged between the input connections of the synchronous rectifier. The rectifier cell comprises a bipolar main switch operated in the inverse mode, wherein an energy store is provided in the base line of the bipolar main switch, which energy store, in conjunction with an auxiliary switch which is concomitantly controlled by the relevant secondary winding for the bipolar main switch, ensures that the main switch is switched off prior to the end of the inverse phase.

Abstract: A method for producing an optoelectronic component may include forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier, providing a covering body with a second adhesion layer, which comprises a second metallic material, applying a first alloy to one of the two adhesion layers, the melting point of the first alloy being so low that the first alloy is liquid, coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct contact with the liquid first alloy, and reacting at least part of the liquid first alloy chemically with the metallic materials, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.

Abstract: A method for producing a ceramic conversion element and a light-emitting device are disclosed. In an embodiment the method includes providing at least four functional layers, each being a green body or a ceramic, wherein first functional layer is formed as a first luminous layer comprising an oxide and configured to at least partially convert light of a first wavelength range into light of a second wavelength range, wherein a second functional layer is formed as a second luminous layer comprising a nitride and configured to at least partially convert light of the first wavelength range into light of a third wavelength range, wherein a third functional layer is formed as a first intermediate layer, wherein the first intermediate layer comprises an oxide, wherein a fourth functional layer is formed as a second intermediate layer, and wherein the second intermediate layer comprises a nitride or an oxynitride.

Abstract: A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.

Abstract: Various embodiments may relate to a load driving circuit and an illumination apparatus including the same. The load driving circuit includes a Single-Ended Primary Inductor Converter (SEPIC) converter adapted to convert an input system voltage into a DC output voltage, and a BUCK converter 200 adapted to regulate a current and provide the regulated current to a load. The load driving circuit further includes a first diode and a second diode which are connected so that the SEPIC converter and the BUCK converter share one switch. According to various embodiments, it is possible to obtain constant current output characteristics and high power factor with a simple circuit structure and a low cost.

Abstract: An electronic half-bridge ZETA converter may include a transformer, wherein a half-bridge is connected to the primary winding of transformer, and wherein a respective capacitance and a respective diode are associated with the half-bridge switches. Moreover, the converter includes a ZETA converter which is connected to secondary winding of transformer, so that the ZETA converter includes a first inductance, which includes the magnetization inductance of transformer, and a second inductance. Finally, the converter includes a control unit which drives the half-bridge switches with four time intervals that are repeated periodically. Specifically, during the fourth time interval the first and the second switch are opened, so that the capacitance associated with said second switch is charged and the capacitance associated with said first switch is discharged, enabling a zero voltage switching.

Abstract: A glazing comprising a luminous means with a substrate having a first main surface, to which a first electrode is applied, a second electrode, and an organic layer stack within an active region of the substrate between the first and the second electrode, wherein the organic layer stack comprises at least one organic layer which is suitable for generating light, wherein the luminous means is arranged between two glass plates of the glazing of a window. Also, storage furniture is disclosed comprising a storage element shaped in planar fashion and having at least one storage surface and at least one radiation-emitting component, and at least one holding apparatus for holding the storage element.

Abstract: In various embodiments, a lamp is provided. The lamp may include a mounting board; at least one semiconductor light source arrangement arranged on the mounting board and comprising a base, which is provided with base contacts for supplying energy to the at least one semiconductor light source arrangement and which is compatible with a standardized incandescent lamp base; and at least one insulation displacement contact to make electrical contact with the at least one semiconductor light source arrangement.

Abstract: A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Abstract: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) has at least one side face (31) which extends at least in places at an angle ? of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a semiconductor body; applying a photoconductive layer on a radiation exit surface of the semiconductor body, wherein the semiconductor body emits electromagnetic radiation during operation; exposing at least one sub-region of the photoconductive layer with electromagnetic radiation generated by the semiconductor body; and depositing a conversion layer on the sub-region of the photoconductive layer by an electrophoresis process.