Abstract: An optoelectronic device with a first electrode is disclosed. The first electrode includes a plurality of electrode elements, which are arranged separately from one another, such that an intermediate space is located between them. The first electrode further includes a conductive structure, which is designed in such a way that it connects adjacent electrode elements to one another in an electrically conductive manner and in the process forms a fuse which acts between the connected adjacent electrode elements. The conductive structure includes a conductive structure layer, which adjoins the electrode elements and connects the adjacent electrode elements to one another in an electrically conductive manner and in the process acts as the fuse, and/or the conductive structure extends in the space between the electrode elements, and connects the adjacent electrode elements to one another in an electrically conductive manner via the intermediate space and thereby acts as the fuse.

Abstract: A lighting device is provided with a pump radiation source for emitting pump radiation, a first phosphor element for converting the radiation into a first conversion light, a second phosphor element for generating a second conversion light, and a coupling-out mirror arranged downstream of the first element in a beam path with at least part of the first light. The first light is a broadband conversion light having components in first and second spectral ranges, and the coupling-out mirror is transmissive only in one of the two ranges such that, lights having first and second spectral components in the first and second spectral ranges are separated. The second element is arranged in a beam path with the light having the second component and, in response to this excitation, emits the second light, which can be used jointly with the light having the first component in order to increase the efficiency.

Abstract: A lighting device for a headlight for generating a light emission pattern in a far field is provided. The lighting device includes at least two phosphor surfaces arranged rotationally movably between different positions, and at least one light source spaced apart from the phosphor surfaces and serving for emitting primary light for illuminating a portion of the phosphor surfaces. An associated predetermined light emission pattern is generatable in respectively exactly one predetermined position of the phosphor surfaces.

Abstract: In various embodiments, an optoelectronic component is provided. The optoelectronic component includes a carrier body. An optoelectronic layer structure is formed above the carrier body and has at least one contact region for electrically contacting the optoelectronic layer structure. A covering body is arranged above the optoelectronic layer structure. At least one contact cutout in which at least one part of the contact region is exposed extends through the carrier body and/or the covering body. At least one plug element for electrically contacting the optoelectronic component is arranged at least partly in the contact cutout and tightly closes the contact cutout. A contact medium, via which the plug element is electrically coupled to the contact region, is arranged in the contact cutout.

Abstract: A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.

Abstract: A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

Abstract: In various embodiments, a lighting device is provided. The lighting device includes at least one light source for emitting primary light, at least one phosphor body which is illuminatable by the primary light and is spaced apart from the at least one light source, and at least one light scattering body which is situated optically downstream of the phosphor body in a light propagation direction of the primary light that is uninfluenced by the phosphor body. The lighting device is designed in the case of an intact phosphor body to generate an illumination pattern by light generated by the phosphor body, and otherwise to generate a light emission pattern by light generated by the at least one light scattering body. The light emission pattern differs from the illumination pattern.

Abstract: An automotive LED lamp having a light guide (28) having a single central bore (29) defined by a cylindrical wall (26) and an outer surface (31) defined by a plurality of outer wall segments (35) bounding, as seen in cross-section transverse the optical axis (18) a regular polygonal shape having more than four sides. The outer polygonal shape has between five sides and sixteen sides, preferably a ten-sided decagon.

Abstract: Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

Abstract: In various embodiments, a street lighting device with a first light source for illuminating the street plane from above is provided. The device may include a second light source located at a closer position to the street plane than said first light source; a sensor sensitive to the occurrence of conditions of reduced ambient visibility; and a controller connected to said sensor and capable of activating said second light source in the presence of said conditions of reduced ambient visibility.

Abstract: A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.

Abstract: A method of producing an optoelectronic semiconductor chip includes providing a growth substrate and a semiconductor layer sequence grown on the growth substrate with a main extension plane including a p-conductive layer, an active zone and an n-conductive layer, removing the semiconductor layer sequence in regions to form at least one aperture extending through the p-conductive layer and the active zone into the n-conductive layer of the semiconductor layer sequence, depositing a protective layer on a side of the semiconductor layer sequence facing away from the growth substrate, depositing an aluminum layer containing aluminum across the entire surface on a side of the semiconductor layer sequence facing away from the growth substrate, removing the growth substrate, and forming a mesa by removing the semiconductor layer sequence at the regions of the protective layer, wherein the protective layer is subsequently freely externally accessible at least in places.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) comprising a top side (2), a bottom side (3) diametrically opposite the top side (2), and an active layer (11) for generating electromagnetic radiation at a first wavelength (10), wherein the semiconductor chip (100) is free of a growth substrate for the semiconductor chip layer sequence (1). The semiconductor chip (100) further comprises a plurality of contact elements (30) which are arranged on the bottom side (3) and can be electronically controlled individually and independently from each other. The semiconductor layer sequence (1) is thereby divided into a plurality of emission regions (20) which are arranged laterally adjacent to one another and are constructed for the purpose of emitting radiation during operation. One of the contact elements (30) is thereby assigned to each emission region (20).

Abstract: A semiconductor laser diode is provided. In an embodiment the semiconductor laser diode includes a semiconductor layer sequence having semiconductor layers disposed vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 ?m emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

Abstract: Lighting control interface techniques and corresponding circuitry are provided. The techniques include receiving a first signal potentially representative of a first lighting control signal, and receiving a second signal potentially representative of a second lighting control signal, and determining if either of the first and second signals complies with a first or second lighting control protocol. The lighting control signal may be applied to the same interface connector (regardless of the protocol), thereby eliminating the need for separate dedicated interface connectors. In some cases, the techniques further include determining that a dummy control signal is manifesting in the first and/or second signals, thereby indicating that no lighting control signal is being applied. Depending on the resulting determination, the techniques may include, for example, setting output lighting power according to a pre-established value, or according to the first or second lighting control protocol.

Abstract: A formed lighting device having a shape that extends in three dimensions is provided. The formed lighting device includes a formed flexible substrate having a shape, and a stretchable conductive trace located on the formable flexible substrate. A plurality of solid state light sources are attached to the stretchable conductive trace. The shape of the substrate, and thus the lighting device, extends in three dimensions and includes a three-dimensional structure that beam shapes light emitted from one of the solid state light sources. The three-dimensional structure may be a plurality of peaks and a corresponding plurality of valleys. A set of solid state light sources in the plurality of solid state light sources may be located in the plurality of valleys.

Abstract: In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.

Abstract: A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Abstract: Techniques and user interfaces (UIs) are disclosed for controlling a solid-state luminaire having an electronically adjustable light beam distribution. The disclosed UI may be configured, in accordance with some embodiments, to provide a user with the ability to control, by wireless and/or wired connection, the light distribution of an associated solid-state luminaire in a given space. The UI may be hosted by any computing device, portable or otherwise, and may be used to control any given light distribution capability provided by a paired luminaire. In accordance with some embodiments, the user may provide such control without need to know details about the luminaire, such as the quantity of solid-state lamps, or their individual addresses, or the address of the fixture itself. In some cases, the disclosed techniques may involve acquiring spatial information of the space that hosts the luminaire and/or providing user-selected distribution of light within that space.

Abstract: Organic light-emitting diodes as well as luminaires with such organic light-emitting diodes are specified. The luminaires may in particular be the following apparatuses, or the luminaires are part of existing apparatuses: alarm, shower cubicle, shower head, solar protection, rain protection, lamp, bed, signalling light, changing cubicle, vision protection, housing, emergency lighting, mirror, slabs, ceiling lights, radiator cladding, blinds, noise protection, umbrella, warning light.