Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer configured to generate a primary radiation having a main wavelength less than 500 nm. The semiconductor chip contains a first conversion element configured to generate a first secondary radiation and a second conversion element configured to generate a second secondary radiation. The semiconductor layer sequence is divided into segments that can be controlled electrically independently of each other and that are arranged laterally adjacent to each other. The conversion elements are attached to main radiation sides of the segments. The first secondary radiation is colored light and the second secondary radiation white light.

Abstract: An organic electronic component includes an organic functional layer having a p-dopant. The p-dopant includes a copper complex having at least one ligand containing an aryloxy group and an iminium group. Additionally specified are the use of a copper complex as a p-dopant and a process for producing a p-dopant.

Abstract: A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.

Abstract: Methods and systems are described for sampling an LCOM message and accurately reconstructing the entire LCOM message using a light receiver (e.g., digital camera) of a typical mobile computing device, such as a smartphone, tablet, or other mobile computing device. These including receiving segments of an LCOM signal from at least two repetitions of the LCOM signal. The location of each segment within the LCOM signal is identified and each segment is stored in a corresponding location in a buffer configured to have a length equal to the LCOM signal. The buffer is a ring buffer, in some embodiments.

Abstract: A projection device for projecting at least one image onto a projection surface is provided. According to the present disclosure, a control device of the projection device is designed, on the basis of an evaluation of at least one measured value of a measuring device of the projection device determined during a drive of a discharge lamp of the projection device with a current waveform to be checked, to check the current waveform in respect of its suitability for minimizing an electrode burn-back of a first electrode and a second electrode, and in the case of a positive check result, to retain the checked current waveform, and in the case of a negative check result, depending on a checked commutation vector characterizing the checked current waveform, to create, by means of a specifiable algorithm, a modified commutation vector that characterizes a modified current waveform.

Abstract: A driver port that provides selectable output currents based on connections thereto, and a driver including the same, is provided. A plurality of shunt resistors are connected in series between a negative output of a driver and a ground. A driver port having a plurality of connection points is provided, each respective connection point connected to a different connection between two of the plurality of shunt resistors. A load including one or more solid state light sources is capable of being connected between one of the connection points of the driver port and a positive output of the driver.

Abstract: An optoelectronic component includes a housing having a top side, wherein an anchoring structure which is a positive relief is arranged at the top side, a covering element is arranged above the top side and anchored at the anchoring structure, and the covering element completely covers the top side.

Abstract: A method of manufacturing optoelectronic components includes spraying a fluorescent layer of an optoelectronic component onto a substrate, the substance or the substance mixture of the fluorescent layer including an electric charge when sprayed on, and wherein the electrically charged substance or the at least partially electrically charged substance mixture includes a larger electric potential when the fluorescent layer is sprayed on than at least one area of the substrate; and locally adjusting the thickness of the fluorescent layer of the sprayed-on fluorescent substance when spraying on the fluorescent layer onto the substrate by an electric potential gradient.

Abstract: An optoelectronic semiconductor chip has a non-rectangular, parallelogram-shaped top surface and an active zone, which is at a distance from the top surface and runs parallel to the top surface at least in places. The top surface includes a radiation exit surface, through which electromagnetic radiation generated during operation in the active zone emerges. The radiation exit surface has at least four vertices. The top surface includes at least one triangular connection area via which the active zone is electrically connectable.

Abstract: Various embodiments may relate to a lens for an illumination device. The lens includes a bottom wall, a top wall, and a circumferential wall. The circumferential wall connects the bottom wall and the top wall. A plurality of regions of the bottom wall respectively arch towards the top wall to define at least one first accommodation cavity having an inner wall as a first incident surface, and at least one second accommodation cavity having an inner wall as a second incident surface. The first and second incident surfaces are designed as different curved surfaces for receiving first incident light and second incident light, respectively. Various embodiments further relate to an illumination device including the lens.

Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.

Abstract: Various embodiments relate to a lighting device with an optoelectronic light source, an optical body downstream thereof for distributing the light, and a diffuser downstream of the latter, onto the light entry surface of which the light emitted by the optical body falls and the light exit surface of which represents a light emission surface of the lighting device. To homogenize the luminous intensity on the light exit surface, in addition to distributing the light with the optical body, the diffuser is not provided to be uniformly scattering to such an extent that light falling thereon in a central region is scattered more intensely than light falling thereon in an edge region.

Abstract: Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

Abstract: A method can be used for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.

Abstract: Various embodiments provide a projection arrangement. The projection arrangement may include a discharge lamp; and a ballast for the discharge lamp. The ballast is designed to provide, during operation of the projection arrangement, a lamp current in the form of alternating current and having an average frequency and a preset waveform, which has a preset commutation scheme, to the discharge lamp. The preset commutation scheme is preset by a preset time sequence of commutations of the lamp current. The ballast is designed to provide the lamp current in such a way that the preset commutation scheme of the lamp current is deviated from repeatedly with at least one preset intervening time period by at least one DC phase with a preset time duration.

Abstract: Various embodiments may relate to an electronic structure, including at least one organic layer, at least one metal growth layer grown onto the organic layer, and at least one metal layer grown on the metal growth layer. The at least one metal growth layer contains germanium. Various embodiments further relate to a method for producing the electronic structure.

Abstract: The invention relates to a lighting device comprising an illuminant embodied as an OLED, and comprising a capacitive switching means, which are arranged on a substrate, wherein the illuminant has a first electrically conductive electrode and a second electrically conductive electrode, wherein a layer comprising organic, electroluminescent material is arranged between the first electrode and the second electrode, wherein the switching means has an electrode, wherein one electrode from the first electrode or the second electrode of the illuminant together with the electrode of the switching means is arranged in one plane, wherein a nonconductive spacing amounting to between 100 ?m and 700 ?m, more particularly between 400 ?m and 600 ?m, is present between said one electrode of the illuminant and the electrode of the switching means in the plane.

Abstract: Flexible interconnection between substrates, where the substrates include one or more solid state light sources, mounted at varying angles are provided. A multi-dimensional lighting device is formed using such substrates. The multi-dimensional lighting device includes external mounting surfaces, each configured to provide mounting positions for one or more substrates. A flexible jumper device electrically couples a given substrate to an adjacent substrate, and provides a predefined clearance between surfaces of the same and exposed conductive surfaces of the lighting device. Each flexible jumper includes a surface mount device (SMD) capable of being placed by automated process, such as by pick-and-place machines. Such lighting devices are thus possible using automated processes in a high-volume, highly-precise manner.