Abstract: The present disclosure relates to different techniques of controlling an agricultural system, as for example a controlled agricultural system, an agricultural light fixture and a method for agricultural management. Furthermore, the disclosure relates to an agricultural system, which comprises a plurality of processing lines for growing plants of a given plant type, wherein a first processing line in the plurality of processing lines is configured to move a first plurality of plants through the agricultural system along a route; and apply a first growth condition to the first plurality of plants to satisfy a first active agent parameter for the first plurality of plants.

Abstract: An organic electronic device having a charge carrier generation layer is disclosed. In an embodiment an organic electronic device includes a first organic functional layer stack, a second organic functional layer stack and a charge carrier generation layer arranged therebetween, the charge carrier generation layer including an n-conducting region, an organic p-doped region and an intermediate region arranged therebetween, wherein the organic p-doped region has as a p-type dopant a fluorinated sulfonimide metal salt.

Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference ?Ubet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting.

Abstract: Optical components for lighting devices and lighting devices including such components are described. In some embodiments the optical components are in the form of a lens that alter the distribution of light produced by a lighting fixture. In some embodiments, the lenses are in the form of a downlight to wallwash lens which, when placed in a downlight fixture, convert the light distribution to that of a wallwash fixture, e.g., causing the downlight to produce an off-axis light distribution, without changing the fixture. The lens includes a body with a light source facing side and an opposite room facing side having two optically active regions, each including structures that redirect a portion of light received through the light source facing side and incident thereon. The first region includes structures that redirect, via refraction, and the second region includes structures that redirect, in part via total internal reflection.

Abstract: A method of setting luminance levels of a solid-state light sources of a luminaire with programmable light distribution is provided. The method includes obtaining a file describing a desired light beam distribution, converting the desired light beam distribution into luminance levels for the solid-state light sources, and applying the luminance levels to the solid-state light sources to cause the luminaire to output the desired light beam distribution.

Abstract: An irradiation unit includes a pump radiation source for the emission of pump radiation; and a conversion element for the at least partial conversion of the pump radiation to a conversion radiation. During operation of the irradiation unit, the pump radiation is incident in the form of a beam from the pump radiation source on an incidence surface of the conversion element. A first portion of the pump radiation is incident on the conversion element in a central segment of the beam and a second portion of the pump radiation is incident on the conversion element in an edge segment of the beam surrounding the central segment. The conversion element is provided in such a way that a normalized degree of conversion and/or a normalized degree of scattering is lower for the second portion of the pump radiation than for the first portion of the pump radiation.

Abstract: A method of producing a lighting device includes a radiation-emitting optoelectronic component, including: arranging the component on a carrier, applying a first layer on the carrier, wherein the first layer surrounds the component at least laterally in the form of a circumferential frame, and subsequently applying a second layer on the first layer laterally next to the frame, wherein the second layer includes a greater hardness than the first layer.

Abstract: Method for ultrasound microscopic measuring of semiconductor samples, computer program for ultrasound microscopic measuring of semiconductor samples, computer program product and ultrasound microscope. Inter alia, a method for the ultrasound microscopic measurement of semiconductor samples is provided, in which the time distances (?t) between signals are compared with comparative time distances, which are determined by a known thickness of a layer of the sample.

Abstract: An illumination device includes a light source, a micromirror array having micromirror actuators, switchable in each case between an on state and an off state, an optical unit, and an optical sensor unit. The light is guided onto the array and proportionally at a respective one of the actuators in an on tilt position is reflected to an illumination application, and in an off tilt position is reflected to the optical sensor unit. The device is configured such that a first actuator, which is in an on state in the on tilt position, is brought to the off tilt position for a first test interval, and a second actuator, which is in an off state in the off tilt position, remains in the off tilt position for the first test interval. A radiation power incident on the sensor unit during the first test interval is detected by the sensor unit.

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Abstract: The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and—a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein—the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and—the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.

Abstract: A heat sink includes an extruded component, a cast component, and an interface layer. The extruded component includes a first aluminum material and is configured to be coupled to a solid state light source. The cast component includes a second aluminum material overmolded onto a portion of the extruded component to form the interface layer. The interface layer is formed of at least one of the first and the second aluminum materials and abuts against and couples the extruded component to the cast component.

Abstract: A laser component is provided which comprises: a surface emitting semiconductor laser configured to emit electromagnetic radiation along an emission axis, an optical element disposed downstream of the semiconductor laser along the emission axis, wherein the optical element comprises a diffractive structure, and a further optical element configured to cause radiation to be emitted asymmetrically with respect to the emission axis. Furthermore, the use of a laser component, a device having a laser component and a method for the production of laser components are provided.

Abstract: A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a substrate having a top surface, a bottom surface opposite the top surface and a first side surface extending transversely or perpendicularly to the bottom surface, a semiconductor body arranged on the top surface of the substrate, the semiconductor body comprising an active region configured to generate light and a contacting comprising a first current distribution structure and a second current distribution structure, which is formed to supply current to the active region, wherein the semiconductor chip is free of any connection point on a side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, and wherein the connection point is a connection point for electrically contacting the first and second current distribution structures.

Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.

Abstract: In an embodiment a method includes illuminating a scene in a first illumination by identically driving the emitters of a light source such that first exposures and/or first colour values of segments are ascertained by an image sensor, determining first illumination parameters for the segments of the scene, wherein the first illumination parameters are determined based on the first exposures and/or the first colour values, illuminating the scene in a second subsequent illumination by differently driving the emitters based on the first illumination parameters of the segments such that second exposures and/or second colour values of the segments are ascertained by the image sensor, determining second illumination parameters for the segments of the scene, wherein the second illumination parameters are determined based on the second exposures and/or the second colour values and illuminating the scene in a third subsequent illumination by differently driving the emitters based on the second illumination parameters

Abstract: An illumination device includes a radiation-emitting optoelectronic component and Fresnel optics including a Fresnel structure having annular ridges and annular grooves, wherein the ridges are configured as closed rings, the ridges and the grooves enclose an optical midaxis of the Fresnel structure, at least one first section of a ridge has a different shape in a predetermined angle range in relation to the midaxis than a second section of the ridge in a second angle range, and the ridges of the Fresnel structure include an inner face and an outer face in cross section through a plane of the midaxis, the inner face facing toward the midaxis in the radial direction, the outer face facing away from the midaxis in the radial direction, the outer face of at least one ridge having different angles in relation to the midaxis in two predetermined angle ranges in relation to the midaxis.

Abstract: Lighting systems and associated controls that can provide active control of lighting device settings, such as on/off, color, intensity, focal length, beam location, beam size and beam shape. In some examples, lighting systems may include eye tracking technology and sensor feedback for one or more lighting device settings and may be configured with depth perception and cavity or incision recognition capability through image or video processing.