Abstract: A component having a metal carrier and a method for producing a component are disclosed. In an embodiment the component includes a carrier having a metallic carrier layer, an insulating layer and a first through-contact extending in a vertical direction throughout the carrier layer, wherein the through-contact is electrically isolated from the carrier layer via the insulating layer. The component further includes a semiconductor body and a wiring structure arranged in the vertical direction between the carrier and the semiconductor body at least places and electrically contacting the semiconductor body, wherein the wiring structure has a first connection area and a second connection area, wherein the connection areas adjoin the carrier and are assigned to different electrical polarities of the component, wherein the first through-contact is in electrical contact with one of the connection areas, and wherein the component is configured to be externally electrically connectable via the carrier.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.

Abstract: A component includes a carrier, a semiconductor body and a mirror layer located therebetween, wherein the semiconductor body includes an active layer configured to generate light during operation of the component, the component has a main surface that illuminates during operation, wherein luminous areas of the main surface represent visually detectable information as a pictogram, in a plan view of the main surface, the pictogram has a contour at least partially defined by a contour of the mirror layer, and in a plan view of the main surface, the component has an outline different from the contour of the pictogram.

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

Abstract: A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

Abstract: A method for producing an optoelectronic semiconductor chip is specified, wherein a method step A) involves providing a semiconductor layer stack comprising a semiconductor layer of a first type, a semiconductor layer of a second type and an active layer arranged between the semiconductor layer of the first type and the semiconductor layer of the second type. Furthermore, the method comprises in a method step B) forming a mesa structure in the semiconductor layer of the first type, the semiconductor layer of the second type and the active layer. The method furthermore comprises in a method step C) applying a passivation layer to the mesa structure by means of vapour deposition or sputtering.

Abstract: Aspects of the present disclosure include methods and systems for the automated commissioning of a network of electronic devices. The locations of large systems of installed electronic devices equipped with wireless communication modules, such as luminaires, light switches, and occupancy sensors, can be rapidly determined by using inter-device distance measurements to calculate the location coordinates of the devices. Increased confidence in the calculated location coordinates can be achieved by comparing the calculated values to an installation plan and assigning the IDs of the specific devices to the location coordinates in the installation plan.

Abstract: An arrangement includes a conversion element, an optoelectronic semiconductor component and a first carrier including a carrier plane, wherein the conversion element is arranged on the carrier plane, the optoelectronic semiconductor component emits a first electromagnetic radiation including a first beam direction and a first wavelength from a first spectral range during operation, the first electromagnetic radiation is directed onto the conversion element, the conversion element at least partly converts the first electromagnetic radiation into a second electromagnetic radiation including a second wavelength from a second spectral range, the first beam direction of the optoelectronic semiconductor component is oriented at an inclination with respect to the carrier plane, a housing including a housing cap is provided, the housing cap is configured in a hollow-body-like fashion, the housing cap and the carrier define an interior, the conversion element and the semi-conductor component are arranged in the interi

Abstract: A luminaire, comprising: a luminaire rear wall for mounting to a wall or ceiling, a printed circuit board, fitted with a plurality of light-emitting diodes and having a connecting cable, as a light-emitting means, and a connecting clamp connected to the connecting cable and to which a supply cable is able to be clamped. A spacer is fixedly mounted to the luminaire rear wall, to which the printed circuit board is releasably attached, with a free space being formed between the printed circuit board and the luminaire rear wall. The whole connecting cable, or a majority thereof, and the connecting clamp are arranged in the free space.

Abstract: A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.

Abstract: A method for fabricating an optoelectronic semiconductor component is disclosed. A semiconductor chip is produced by singularizing a wafer. The semiconductor chip comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate. The semiconductor layer sequence has an active region for emission or absorption of radiation and a sacrificial region arranged next to the active region. The sacrificial region in the finished semiconductor component is not intended to emit or absorb radiation. A trench, introduced into the semiconductor layer sequence, penetrates the active layer and separates the active region from the sacrificial region. The semiconductor chip with the semiconductor layer sequence is applied on a carrier. The substrate is detached from the active region of the semiconductor layer sequence. In the sacrificial region, the semiconductor layer sequence remains mechanically connected to the substrate.

Abstract: An assembly includes a carrier including a glass material, including at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, and at least one surface of the semiconductor component connects to the carrier via a melted surface including glass.

Abstract: Various embodiments provide a bearing element for an electrode rod in a lamp stem. The bearing element includes an envelope configured in order to extend along a longitudinal axis of the electrode rod. The envelope has a polygonally shaped cross section at least in sections.

Abstract: A light-emitting component includes at least two radiation-emitting semiconductor chips of a first type configured to emit electromagnetic radiation during operation, and a light exit surface at a light exit side of the light-emitting component, wherein each of the radiation-emitting semiconductor chips of the first type includes a semiconductor layer sequence with a stacking direction, the stacking direction of each radiation-emitting semiconductor chip of the first type is parallel to the light exit surface of the component, and all the semiconductor chips of the first type are arranged directly below the light exit surface.

Abstract: Various implementations disclosed herein include a method for aiding disinfection of a room. The method may include collecting, by one or more sensors in a disinfection system, activity data in the room. A computing device or output device may identify one or more hot spots from the activity data, in which the one or more hot spots indicate areas in the room for cleaning, and generate a contamination map containing the one or more hot spots. The output device may output the contamination map to an output device for viewing by a user.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.

Abstract: A multilayer encapsulation, a method for encapsulating and an optoelectronic component are disclosed. In an embodiment the multilayer encapsulation includes a layer sequence having at least one barrier layer and at least one planarization layer. The barrier layer and the planarization layer together have a lower water permeability than the barrier layer.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a first semiconductor region (21) of a first conductivity type and a second semiconductor region (23) of a second conductivity type. An active zone (22) configured for generating light is situated between these two semiconductor regions (21, 23). A first electric contact layer (31) is situated directly at the first semiconductor region (21) in places. Furthermore, a second electric contact layer (32) is situated directly at the second semiconductor region (23) in places, wherein the semiconductor regions (21, 23) are energized by way of the contact layers (31, 33). Furthermore, two metallic current leads (41, 43) and an insulation layer (5) are present. The insulation layer (5) covers the second semiconductor region (23) directly in places and rises over the latter. Further, the insulation layer (5) is situated below the current lead (43) for the second semiconductor region (23).

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes attaching a plurality of optoelectronic semiconductor chips on predetermined locations of an intermediate film, providing a cavity film with a plurality of separated openings, attaching the cavity film to the intermediate film such that each optoelectronic semiconductor chip is associated with a respective opening, wherein the cavity film is thicker than the optoelectronic semiconductor chips such that the cavity film exceeds the optoelectronic semiconductor chips in a direction away from the intermediate film, filling a casting material in each of the openings such that the optoelectronic semiconductor chips are casted with the casting material and removing the intermediate film.