Abstract: A display device and a method for operating a display device are disclosed. In an embodiment a display device includes a plurality of image points configured for emitting visible light of adjustable color by at least one semiconductor layer sequence, wherein the image points are independently controllable of one another, wherein each of the image points includes a plurality of types of pixels and each type of pixel is configured to emit light of a particular color, wherein the pixels are independently controllable of one another, wherein each of the pixels is divided into a plurality of subpixels, the subpixels being independently controllable of one another within the associated pixel, and wherein all subpixels of the associated pixel are configured for emitting light of the same color from the display device without further color change.

Abstract: An LED chip includes a carrier, a semiconductor layer sequence, a reflective layer sequence arranged in regions between the carrier and the semiconductor layer sequence, wherein the reflective layer sequence includes a dielectric layer facing the semiconductor layer sequence and a metallic mirror layer facing away from the semiconductor layer sequence, and an encapsulating layer arranged in places between the carrier and the reflective layer sequence, the encapsulating layer extending in places through the reflective layer sequence into the semiconductor layer sequence and thus forming a separating web separating an inner region of the reflective layer sequence from an edge region of the reflective layer sequence.

Abstract: A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.

Abstract: A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength ?dom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength ?dom2, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength ?dom1 of the first active layer and the second dominant wavelength ?dom2 of the second active layer are different from each other.

Abstract: A semiconductor layer sequence and a method for producing a semiconductor layer sequence are disclosed. In an embodiment a semiconductor layer sequence includes a first nitridic compound semiconductor layer, an intermediate layer, a second nitridic compound semiconductor layer and an active layer, wherein the intermediate layer comprises an AlGaN layer with an Al content of at least 5%, wherein the second nitridic compound semiconductor layer has a lower proportion of Al than the AlGaN layer such that relaxed lattice constants of the AlGaN layer of the intermediate layer and of the second nitridic compound semiconductor layer differ, wherein the second nitridic compound semiconductor layer and the active layer are grown on the intermediate layer in a lattice-matched manner, wherein the active layer comprises one or more layers of AlInGaN, and wherein an In content in each of the layers of AlInGaN is at most 12%.

Abstract: An optoelectronic component includes a housing body comprising a mounting face and a leadframe embedded into the housing body. The leadframe comprises a first and a second leadframe section, wherein the leadframe sections each comprise a contact region and a terminal region. While the contact regions are exposed at the mounting face, the terminal regions project laterally from the housing body. The housing body is completely enclosed by a molding material, wherein the terminal regions are not enclosed by the molding material.

Abstract: A fastening device for fastening lighting devices to T-shaped profiles of a false ceiling comprises a base wall on which the lighting device may be fastened. The fastening device also comprises two longitudinal side walls rigidly connected along the longitudinal sides of the base wall and a plurality of fastening elements arranged along the longitudinal sides of the base wall, wherein the fastening elements can be folded in the direction of the base wall, to engage the fastening device with the T-shaped profile. The fastening device also comprises at least two spacer elements arranged between the base wall and a respective longitudinal side wall to provide a gap between the side walls and the base wall. This gap provides a passage for the electrical connections between the lighting device and a power supply source located above the false ceiling.

Abstract: A converter for an optoelectronic component, an optoelectronic component, a method for forming a converter for an optoelectronic component and a material for a reflector of an optoelectronic component are disclosed. In an embodiment, a converter includes a conversion element for converting a wavelength of electromagnetic radiation which passes through at least a part of the conversion element and a reflector, wherein the reflector includes a reflector material which includes MgF2 and/or an inorganic material as a matrix material in which a plurality of particles is embedded, wherein a refractive index of the matrix material amounts to at least 1 and at most 2, and wherein a refractive index of the particles amounts to at least 1.5.

Abstract: A method for manufacturing an optoelectronic component includes providing a growth substrate; applying a succession of semiconductor layers; structuring the succession of semiconductor layers; applying a sacrificial layer; depositing a metal layer; optionally planarizing using a dielectric material; forming a second terminal contact through the active region; applying a permanent support; and detaching the growth substrate and exposing the metal layer.

Abstract: A light-emitting diode includes an optoelectronic semiconductor chip that emits electromagnetic radiation through a radiation side along a main direction of emission running transversely to the radiation side during operation, the semiconductor chip is embedded in a solid body, wherein side surfaces and the radiation side are covered by the solid body in a form-fit manner, the solid body widens along the main direction of emission, a cover element is arranged downstream of the solid body in the main direction of emission and is applied directly onto the solid body, a side of a cover element facing away from the solid body is formed as a radiation exit surface of the light-emitting diode, and a first contact element is exposed in an unmounted and/or non-contacted state of the light-emitting diode.

Abstract: A radiation-emitting organic-electronic device is specified. The radiation-emitting organic-electronic device includes a substrate, a first electrode arranged above the substrate, a light-emitting layer arranged above the first electrode, and a second electrode arranged above the light-emitting layer. The light-emitting layer includes a fluorescent compound of a specified formula A. The spacer comprises a linear molecular chain to which two substituents R and R? are terminally bonded, and at least one group E bonded to the linear molecular chain, wherein E denotes hydrogen and/or an organic radical. The linear molecular chain of the molecules of the fluorescent compound is aligned parallel to the plane of extent of the substrate.

Abstract: A method for analyzing an environment of a mobile terminal by emission of unique identification data associated with at least one lighting device, by a light-based communication of the at least one lighting device, and determination of location coordinates of the mobile terminal in accordance with the identification data collected using an optical sensing unit of the mobile terminal with respect to the at least one lighting device, on the basis of the stored location coordinates of the at least one lighting device, each correlated with a respective installation position of the at least one lighting device, wherein provision of a respective sensor signal by at least one environmental signal sensor, extraction of environmental data from the respective sensor signal, and storage of the environmental data in accordance with the location coordinates of the mobile terminal, causing existing environmental data to be updated.

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.

Abstract: What is specified is a method for producing a coating comprising the following steps: —providing a material source having a top surface and a main coating direction, —providing a substrate holder having a top surface, —providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, —attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, —setting the length of the rotating arm in such a manner that a normal angle (?) throughout the method is at least 30° and at most 75°, —applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.

Abstract: A current sensing circuit for sensing an intermittent current having a Zero Current Period includes: an amperometric transformer having a primary winding for the current to be sensed to flow therethrough and a secondary winding, a sensing resistor coupled to the secondary winding of the transformer, an offset capacitor coupled with sensing resistor between the sensing resistor and ground, and a switch element acting across the coupling of the sensing resistor and the offset capacitor, the switch element being electrically conductive during the zero current period or a fraction thereof.

Abstract: A component includes a semiconductor chip, an envelope and a reflector, wherein the semiconductor chip has a front side, a rear side facing away from the front side and side faces, and the semiconductor chip is electrically contactable at least partially via its rear side, the reflector completely encloses the semiconductor chip in lateral directions, has a first subregion and a second subregion directly adjoining the first subregion, and the first subregion is spatially spaced from the semiconductor chip and the second subregion directly adjoins the semiconductor chip, the envelope covers the front side of the semiconductor chip completely and the side surfaces of the semiconductor chip at least partially so that the envelope has an interface facing the semiconductor chip and reproducing a contour of the semiconductor chip in regions, and in the component is free of a lead frame enclosed by a molded body.

Abstract: The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).

Abstract: Systems, methods, and software for determining whether or not a monitored space is occupied by one or more humans and/or animals. In some embodiments, one or more radio-frequency (RF) receivers monitor(s) one or more RF frequencies for changes in received signal strength that may be due to changes in occupancy of the space being monitored. The received signal strength is analyzed using nonparametric online change-point detection analysis to determine change-points in the received signal(s). One or more statistical measures of the received signal(s), such as mean and variance, are used in conjunction with the change-point detection to determine a probability that the occupancy of the monitored space has changed. In some embodiments, additional sensors and/or machine learning can be used to enhance the performance of the disclosed occupancy-detection methodologies.

Abstract: An organic light-emitting diode comprising an organic layer sequence, a radiation exit area and an encapsulation. The organic layer sequence comprises at least one radiation-emitting region which generates electromagnetic radiation in the spectral range from infrared radiation to UV radiation during operation. The radiation exit area is structured, so that the electromagnetic radiation has a directional emission profile. The encapsulation forms a seal of the organic layer sequence against environmental influences.

Abstract: A light-emitting component is disclosed. In an embodiment the light-emitting device includes a first layer stack for generating light, at least one additional layer stack for generating light, wherein each of the first layer stack and the at least one additional layer stack are separately drivable from one another and an auxiliary structure arranged between the first layer stacks and the at least one additional layer stacks.