Abstract: A phosphor is disclosed. In an embodiment the phosphor includes an inorganic compound having at least one activator E and N and/or O in its empirical formula, wherein E is selected from the group consisting of Mn, Cr, Ni, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Yb, Tm, Li, Na, K, Rb, Cs and combinations thereof, and wherein the inorganic compound crystallizes in a crystal structure with the same atomic sequence as in K2Zn6O7.

Abstract: An optoelectronic component includes a carrier having a chip mounting face, wherein the chip mounting face has a reflection coating, and an optoelectronic semiconductor chip adhesively bonded on the reflection coating by an adhesive so that the reflection coating is subdivided into a first subsection covered by the semiconductor chip and a second subsection, which is free of the semiconductor chip, wherein the adhesive has reflection particles that reflect electromagnetic radiation emitted by the semiconductor chip, and the second subsection is at least partially covered by a corrosion protection layer.

Abstract: A sensor system and a method for operating a sensor system are disclosed. In an one embodiment, the sensor system includes a light source configured to emit laser radiation and an optical element configured to image the laser radiation to at least one image point at a fixed distance in an optical far field of the sensor system. A detector is configured to detect a proportion of the laser radiation reflected back at at least one object illuminated by the laser radiation. A pin hole is located in front of the detector, a diameter of the pin hole corresponds to a size of the image point within a factor of 2.

Abstract: A method of producing sensors includes providing a carrier plate; arranging semiconductor chips on the carrier plate, wherein the semiconductor chips include at least radiation-detecting semiconductor chips; providing radiation-transmissive optical elements on the carrier plate provided with the semiconductor chips, wherein a plurality of radiation-transmissive optical elements are provided jointly on the carrier plate provided with the semiconductor chips; and singulating the carrier plate provided with the semiconductor chips and the radiation-transmissive optical elements, thereby forming separate sensors including a section of the carrier plate, at least one radiation-detecting semiconductor chip and at least one radiation-transmissive optical element.

Abstract: An optoelectronic component having a leadframe and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a radiation-emitting semiconductor chip having a mounting surface and side surfaces, a leadframe comprising a first element having a first main extension plane, a second element having a second main extension plane, and a third element having a third main extension plane, wherein the main extension planes are arranged parallel to one another, and wherein the elements are arranged one above the other in a stacking direction; and a reflective casting compound forming a planar surface facing the mounting surface of the semiconductor chip, wherein the semiconductor chip is mounted with the mounting surface on a support surface of the third element, which is smaller than the mounting surface of the semiconductor chip, such that the semiconductor chip projects laterally beyond the support surface of the third element.

Abstract: A component with an geometrically adapted contact structure and a method for producing such a component are disclosed. In an embodiment a component includes a contact structure including a contiguous contact layer having a plurality of openings and being assigned to a first electrical polarity of the component and a plurality of individual contacts at least in part having different vertical heights, wherein the contacts extend in the openings throughout the contiguous contact layer, wherein the contacts are laterally spaced from each other and assigned to a second electrical polarity of the component, and wherein the contacts are arranged with respect to their different heights and their positions such that a height distribution of the contacts is adapted to a predetermined geometrically non-planar contour profile.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1).

Abstract: According to the present disclosure, an illumination apparatus includes a pump radiation source for emitting pump radiation, a phosphor element for converting the pump radiation into conversion light and a carrier, on which the phosphor element is mounted, which carrier is made of a carrier material which is transparent at least for the pump radiation and has a refractive index ncarrier. The pump radiation passes through the carrier, exits at an exit surface of the carrier and is then incident on a pump radiation input coupling surface of the phosphor element that is arranged at the exit surface. The pump radiation in the carrier is incident on the exit surface of the carrier with a centroid direction, which centroid direction is inclined with respect to a surface normal on the exit surface by an exit angle ?out?0°, and ?out<?c with ?c=arcsin(1/ncarrier).

Abstract: A mobile device with a side-looking biometric sensor, a sensor and a method for sensing a biometric function of a user holding a mobile device a disclosed. In an embodiment, a mobile device has a generally flat rectangular shape with a relatively large front and rear surfaces and relatively small upper side, lower side, left side and right side surfaces, wherein the mobile device includes a sensor configured for capturing biometric data of a user holding the mobile device. The sensor includes a light source configured for emitting light towards a hand of the user and a photodetector configured for receiving light emitted from the light source and reflected back from the hand, wherein the sensor is a side-looking sensor.

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

Abstract: A laser component including a molded body, and a laser chip embedded into the molded body and configured to emit a laser beam in an emission direction, wherein a surface of the molded body includes a deflection section arranged and inclined relative to the emission direction such that a laser beam emitted by the laser chip impinges on the deflection section and is subjected to total internal reflection at the deflection section.

Abstract: Various embodiments include a voltage adjusting block (VAB) coupled to a light emitting diode (LED) string. The VAB includes a first switch having a first lead connected to a voltage input, and having a second lead, the first switch having a controllable duty cycle, a first diode having a cathode connected to the second lead of the first switch, and having an anode, a first inductor having a first lead connected to the cathode of the first diode, and having a second lead, and a first capacitor having a first lead connected to the anode of the first diode and having a second lead connected to the second lead of the first inductor. The VAB may provide a variable voltage across the anode of the first diode and the second lead of the first capacitor dependent upon a number of LEDs in the LED string being turned on.

Abstract: A filament includes a multiplicity of light-emitting semiconductor chips, wherein the semiconductor chips are arranged on a carrier, the semiconductor chips being electrically contacted, a scattering structure is configured to scatter light of the light-emitting semiconductor chips, the scattering structure is formed by structuring a surface, a converter covers the light-emitting semiconductor chips, and the structuring of the surface is formed on a surface of the converter.

Abstract: The invention relates to a method for operating a transmission device of a lighting device comprising an illumination device, wherein the transmission device is arranged in or immediately on the illumination device and wirelessly emits a radio signal with identification signals that are specific to the transmission device, wherein the radio signal is emitted according to exactly one predetermined radio standard, wherein the radio signal contains the specific identification data at least in two data formats that are different from each other.

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.

Abstract: A method of forming one or more three-dimensional objects for an optoelectronic lighting device including a carrier with an optoelectronic semiconductor component includes providing a carrier of an optoelectronic lighting device, wherein an optoelectronic semiconductor component is arranged on the carrier, and a construction region partly delimited by the carrier is defined, the optoelectronic semiconductor component facing the construction region, introducing a polymerizable liquid into the construction region, and exposing the construction region to form one or more solid polymers from the polymerizable liquid in a curing zone included by the construction region, and one or more three-dimensional objects from the one or more solid polymers in the curing zone, wherein an ineffective region is formed during the process of exposing the construction region, polymerization being inhibited in the ineffective region, and the curing zone is arranged between the carrier and the ineffective region.

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangem

Abstract: A radiation-emitting component includes a radiation source including at least one semiconductor layer sequence that generates radiation; an optical waveguide device disposed downstream of the radiation source; and a conversion element for radiation conversion disposed downstream of the optical waveguide device, wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device, radiation is couplable from the optical waveguide device into the conversion element via an input surface, and the emission surface of the radiation source is larger than the input surface of the conversion element.

Abstract: A device with semiconductor chips on a primary carrier is disclosed. In an embodiment a device includes a primary carrier, a plurality of semiconductor chips arranged on the primary carrier, a radiation conversion material arranged at least in places on the semiconductor chips and the primary carrier, a secondary carrier to which the primary carrier is attached and a scattering body arranged on a front side of the secondary carrier facing the primary carrier, the scattering body covering the semiconductor chips, wherein the primary carrier is formed reflective to primary radiation at least in a region of the semiconductor chips, and wherein, during operation of the device, at least secondary radiation exits through a front side of the scattering body facing away from the secondary carrier and through a rear side of the secondary carrier facing away from the primary carrier.

Abstract: A semiconductor chip is disclosed. In an embodiment a semiconductor chip includes a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer and a semiconductor layer sequence, which, at least in places, is in direct contact with the mask layer, wherein the semiconductor layer sequence is disposed on the mask layer, wherein the mask layer comprises a light-transmissive material, and wherein the light-transmissive material comprises an optical refractive index for light which is smaller than a refractive index of the semiconductor layer sequence.