Abstract: There is provided a circuit assembly for time-discretizing an analog electrical signal, including an input terminal supplying the analog electrical signal, an output terminal providing a time-discrete signal depending on the supplied analog electrical signal and a sample and hold circuit, which comprises a capacitor connected to the output terminal, an electronic switching unit connected between the input terminal and the output terminal and a control unit controlling the switching unit, wherein the switching unit provides an off-state due to an off-signal of the control unit and an on-state due to an on-signal of the control unit, wherein the switching unit provides an electrical resistance in the on-state, which cooperates with the capacitor and comprises a preset resistance value, such that the sample and hold circuit provides a low-pass with preset cut-off frequency. There is further provided a detection device and lighting device with such a circuit assembly.

Abstract: An automotive lighting system (41) includes an automotive lamp having an LED array (14) and a lens (34). The lens (34) images a square field of illumination (101) into rectangular field of illumination (48) to support adaptive front lighting in an automotive environment (28). The lens (34) includes light-transmissive first, second, and third regions (64, 66, 68), and a baffle (70) adapted to obstruct light from spreading between the light-transmissive first, second, and third regions (64, 66, 68). The baffle (70) is disposed between the LED array (14) and light receiving surfaces (98, 104, 110) of the light-transmissive first, second, and third regions (64, 66, 68). The lens (34) enables imaging of an approximately rectangular field of illumination (48) from a single chip (12), reducing cost and cooling needs of adaptive front lighting systems.

Abstract: A light source may include an LED chip having a light-emitting surface, on which a luminophore layer is arranged. The luminophore layer may include adjacently arranged regions having different luminophores. A lighting device may include at least one light source.

Abstract: A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.

Abstract: A method of producing an optoelectronic semiconductor chip includes in order: A) creating a nucleation layer on a growth substrate, B) applying a mask layer on to the nucleation layer, C) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by mask islands having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, D) further growing the coalescence layer with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, E) growing a multiple quantum well structure on the coalescence layer, F) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for the total reflection of radiation generated in the multiple quantum well structure, and G) detaching the growth substrate and creating a roughening by etching.

Abstract: There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter.

Abstract: The invention relates to an optoelectronic component, the optoelectronic component comprises a light-emitting layer stack, and an electrothermal protection element, which is connected to the layer stack in the component and has a temperature-dependent resistor.

Abstract: An optoelectronic assembly and method for operating an optoelectronic assembly are provided. In some aspects, the optoelectronic assembly includes an organic light-emitting component, a temperature sensor configured to record a temperature value, and a driver circuit coupled to the organic light-emitting component and the temperature sensor. The driver circuit is configured to apply an AC voltage to the organic light-emitting component when the organic light-emitting component is switched on, and if the recorded temperature value is less than a predetermined temperature threshold value, where the AC voltage is, at least, temporarily less than an instantaneous threshold voltage of the organic light-emitting component. The driver circuit is also configured to apply a DC voltage to the organic light-emitting component if a measurement value is greater than or equal to a predetermined threshold value, where the DC voltage is greater than the instantaneous threshold voltage of the organic light-emitting component.

Abstract: A method for producing an organic electronic device is disclosed. In an embodiment the method includes applying an organic material to a substrate to form at least one organic functional layer, applying a patterned electrode material to the at least one organic functional layer by a first mask, and removing the organic material from regions which are free of the electrode material.

Abstract: An electronic converter comprising an input comprising two terminals for receiving a first power signal, and an output comprising two terminals for providing a second power signal. On the primary side, the converter comprises a half-bridge, a transformer and a first capacitor. Specifically, the first capacitor and the primary winding of the transformer are connected in series between the intermediate point of the half-bridge and an input terminal. On the secondary side, the converter comprises a diode, a second capacitor and an inductor. The second capacitor and the secondary winding of the transformer are connected in series between the cathode and anode of the diode, and the inductor and the output are connected in series between the cathode and the anode of the diode. The electronic converter comprises a third capacitor and at least one electronic switch adapted to selectively connect the third capacitor in parallel with the second capacitor.

Abstract: Lighting systems and associated controls that can provide active control of lighting device settings, such as on/off, color, intensity, focal length, beam location, beam size and beam shape. In some examples, lighting systems may include eye tracking technology and sensor feedback for one or more lighting device settings and may be configured with depth perception and cavity or incision recognition capability through image or video processing.

Abstract: A semiconductor body is disclosed. In an embodiment a semiconductor body includes a p-doped region, an active region, an intermediate layer and a layer stack containing indium, wherein an indium concentration in the layer stack changes along a stacking direction, wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants, wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack, wherein the intermediate layer and/or the layer stack are n-doped at least in places, wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.

Abstract: Various embodiments include a voltage adjusting block (VAB) coupled to a light emitting diode (LED) string. The VAB includes a first switch having a first lead connected to a voltage input, and having a second lead, the first switch having a controllable duty cycle, a first diode having a cathode connected to the second lead of the first switch, and having an anode, a first inductor having a first lead connected to the cathode of the first diode, and having a second lead, and a first capacitor having a first lead connected to the anode of the first diode and having a second lead connected to the second lead of the first inductor. The VAB may provide a variable voltage across the anode of the first diode and the second lead of the first capacitor dependent upon a number of LEDs in the LED string being turned on.

Abstract: An automotive lighting system (41) includes an automotive lamp having an LED array (14) and a lens (34). The lens (34) images a square field of illumination (101) into rectangular field of illumination (48) to support adaptive front lighting in an automotive environment (28). The lens (34) includes light-transmissive first, second, and third regions (64, 66, 68), and a baffle (70) adapted to obstruct light from spreading between the light-transmissive first, second, and third regions (64, 66, 68). The baffle (70) is disposed between the LED array (14) and light receiving surfaces (98, 104, 110) of the light-transmissive first, second, and third regions (64, 66, 68). The lens (34) enables imaging of an approximately rectangular field of illumination (48) from a single chip (12), reducing cost and cooling needs of adaptive front lighting systems.

Abstract: A luminescent material may include the formula (MB) (TA)3?2x(TC)1+2xO4?4xN4x:E where 0<x<0.875. —TA may be selected from a group of monovalent metals, such as Li, Na, Cu, Ag, and combinations thereof. —MB may be selected from a group of divalent metals including Mg, Ca, Sr, Ba, Zn, and combinations thereof. —TC may be selected from a group of trivalent metals including B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals, and combinations thereof. —E may be selected from a group including Eu, Mn, Ce, Yb, and combinations thereof.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.

Abstract: A light-emitting semiconductor chip comprises: a radiation-transmissive substrate, an epitaxially grown semiconductor layer sequence on a main surface of the substrate, a first contact and a second contact on a contact surface of the semiconductor layer sequence facing away from the substrate for electrical and mechanical contacting of the semiconductor chip, a transparent, electrically conductive layer which is arranged on the contact side and is electrically connected to the first contact.

Abstract: A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.