Abstract: The invention relates to a semiconductor laser (1) comprising a semiconductor layer sequence (2) with an n-type n-region (21), a p-type p-region (23) and an active zone (22) lying between the two for the purpose of generating laser radiation. A p-contact layer (3) that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region (23) for the purpose of current input. An electrically-conductive metallic p-contact structure (4) is applied directly to the p-contact layer (3). The p-contact layer (3) is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer (3) during operation of the semi-conductor laser (1). Two facets (25) of the semiconductor layer sequence (2) form resonator end surfaces for the laser radiation. Current input into the p-region (23) is inhibited in at least one current protection region (5) directly on at least one of the facets (25).

Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), an active layer (23), and a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that the firs

Abstract: A reflector assembly for a solid-state luminaire is disclosed. The disclosed reflector assembly may be configured, in accordance with some embodiments, to be disposed over a given printed circuit board (PCB) of a host luminaire such that emissions of emitters populated over that PCB are reflected out of the luminaire via the reflector assembly. In some embodiments, the reflector assembly may be formed from one or more reflective members, which may be generally bar-shaped or cup-shaped, or other example configurations. In some other embodiments, the reflector assembly may be formed from a bulk body having one or more reflective cavities formed therein. The particular configuration of a given reflective member or reflective cavity, as the case may be, of the reflector assembly, as well as the particular arrangement thereof for a host luminaire, may be customized as desired for a given target application or end-use.

Abstract: A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.

Abstract: An optoelectronic component includes at least one optoelectronic semiconductor chip, wherein the semiconductor chip is arranged on a leadframe section, the leadframe section includes a stiffening structure projecting away laterally from the leadframe section, and the leadframe section, the stiffening structure and the semiconductor chip are embedded in an electrically insulating housing.

Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0?n?1, 0?m?1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.

Abstract: A wavelength converter includes a converter layer for at least partly converting primary light of a first spectral composition into secondary light of a second spectral composition, an electrically insulating first insulation layer arranged below the converter layer, a mirror being arranged at the front side of said insulation layer facing the converter layer, at least one conductor track which is arranged at the first insulation layer and which extends laterally at a distance from the mirror, mutually spaced apart contacts extending through the first insulation layer, of which contacts in each case at least two contacts electrically connect a conductor track to a rear side of the first insulation layer, and mutually spaced apart electrically conductive solder connection volumes arranged below the first insulation layer, said solder connection volumes being electrically connected in each case to one of the contacts.

Abstract: A laser component includes a housing that includes a base section including a top side and an underside, wherein a plurality of electrical soldering contact pads are configured at the underside of the base section, the electrical soldering contact pads enabling surface mounting of the laser component, a plurality of electrical chip contact pads are configured at the top side of the base section and electrically conductively connect to the soldering contact pads, the housing includes a cavity adjoining the top side of the base section, and a laser chip is arranged in the cavity and electrically conductively connects to at least some of the chip contact pads.

Abstract: Various implementations disclosed herein includes a method for operating lighting fixtures in horticultural applications. The method may include receiving a user input of a desired irradiance for a first color channel of one or more lighting fixtures that irradiates a plant bed, in which each of the one or more lighting fixtures comprises at least one light emitting diode (LED) array, determining, for each of the one or more lighting fixtures, a PWM setting of the first color channel such that each of the one or more lighting fixtures irradiate the plant bed at the desired irradiance based on calibration data stored in each of the one or more lighting fixtures, and applying, to each of the one or more lighting fixtures, the determined PWM setting of the first color channel.

Abstract: Various implementations disclosed herein includes a method for operating lighting fixtures in horticultural applications. The method may include receiving a user input of a desired irradiance for a first color channel of one or more lighting fixtures that irradiates a plant bed, in which each of the one or more lighting fixtures comprises at least one light emitting diode (LED) array, determining, for each of the one or more lighting fixtures, a PWM setting of the first color channel such that each of the one or more lighting fixtures irradiate the plant bed at the desired irradiance based on calibration data stored in each of the one or more lighting fixtures, and applying, to each of the one or more lighting fixtures, the determined PWM setting of the first color channel.

Abstract: A component comprising a support and a semiconductor body arranged on the support, the support formed by a molded body and a metal layer. The metal layer has a first subregion and a second subregion laterally spaced apart by an intermediate space and thereby electrically separated. The molded body fills the intermediate space and has a surface extending in lateral directions free from the subregions of the metal layer and forms the rear side of the support. The support has a side face formed by a surface of the molded body extending in vertical directions, at least one of the subregions formed such that electrical contact can be made by way of the side face.

Abstract: A diode bar and a method for producing a laser diode bar are disclosed. In an embodiment a laser diode bar includes a plurality of emitters arranged side by side, the each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact, wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer, and wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted.

Abstract: The invention relates to a component with at least one optoelectronic semiconductor chip, comprising: a connection substrate, which has an assembly surface and electric contact structures, and a plurality of structured semiconductor units, each of which has a plurality of monolithically connected pixels with a respective active layer that emits light during operation, wherein: the semiconductor units are arranged at a lateral distance to one another on the assembly surface, the distance between adjacent semiconductor units is at least 5 ?m and maximally 55 ?m, and the pixels can be controlled in an electrically separated manner. The invention also relates to a method for producing said component.

Abstract: Various implementations disclosed herein include a method of providing indoor navigation services. The method may include transmitting, via light-based communication (LCom) signals by each of a first plurality of luminaires, identifiers assigned to each of the plurality of luminaires, and transmitting, via LCom signals by a second plurality of luminaires, mapping information associating the identifiers of each of the first plurality of luminaires with a location of each of the first plurality of luminaires. The first plurality of luminaires may transmit the LCom signals towards the ground of an indoor environment while the second plurality of luminaires may transmit the LCom signals towards the ceiling of the indoor environment and are reflected downwards.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: An optoelectronic semiconductor device, a method for manufacturing an optoelectronic semiconductor device and light source having an optoelectronic semiconductor device are disclosed.

Abstract: An illumination device is provided with an optoelectronic light source and an optical body. The optical body is divided into an inner lens part and an outer reflector part adjoining thereon outward in relation to directions perpendicular to a main direction, which body parts are formed monolithically with one another. The inner part is formed as a Fresnel lens with active flanks which acts as a collimating lens, so that a first part of the light which passes through the Fresnel lens via the active flanks is refracted toward the main direction. A second part of the light which passes through the Fresnel lens via folding flanks is refracted away from the main direction. A reflection surface is provided on the outer reflector part, on which the second part of the light is incident and is reflected thereon and deflected with the reflection toward the main direction.

Abstract: Methods and system to determine the health of wireless mesh networks are provided. Each radio node of a wireless mesh network transmits Link Quantification Messages (LQMs) interPAN at maximum power to enable adjacent nodes to determine the Received Signal Strength Indication (RSSI) on the wireless link to that radio node. Each radio node also transmits LQMs at successively lower power levels. The adjacent nodes detect a power level at measurable packet error rate to determine a noise floor for the wireless link. An aggregator collects link quantification information from the radio nodes and forms an intercommunication matrix for the wireless network. The RSSI and power level at measurable packet error rate information is used to remove unreliable links from the intercommunication matrix. Nodes are ranked and the reliability and dependability of the nodes is calculated to show the network health.

Abstract: An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 ?m in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).

Abstract: A method for producing an optic device, an optic device and an assembly including such an optic device are disclosed. In an embodiment, the method includes providing an active medium mechanically carried by a carrier body or included in the carrier body; applying an adhesive layer to at least one of the active medium or the carrier body, wherein the adhesive layer comprises at least one organic material and is applied by physical or chemical vapor phase deposition, and wherein a thickness of the adhesive layer is between 20 nm and 0.6 ?m inclusive.