Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a plurality of active regions configured to emit electromagnetic radiation, wherein the active regions are arranged spaced apart from each other, wherein the active regions have a main extension direction, wherein each active region has a core region, an active layer covering the core region at least in directions transverse to the main extension direction, wherein each active region has a cover layer covering the active layer at least in directions transverse to the main extension direction, wherein each active region has a current spreading layer at least partly covering sidewalls of each respective active region, and wherein a metal layer directly adjoins parts of the active regions and parts of the current spreading layers.

Abstract: A light-emitting component provides an emitter layer including phosphorescent and fluorescent emitter materials, and at least one predefined first and second display regions. The first region has both emitter materials. The second region has the phosphorescent emitter material. A first electromagnetic radiation is emitted upon the transition from the first excited state to the ground state of the phosphorescent emitter material. A second electromagnetic radiation is emitted upon the transition from the excited state to the ground state of the fluorescent emitter material. The excited state of the fluorescent emitter material is occupied by an energy transfer from the second excited state of the phosphorescent emitter material to the excited state of the fluorescent emitter material so that a mixed light composed of first and second electromagnetic radiations is emittable from the first region, and the light that is emittable from the second region is free of second electromagnetic radiation.

Abstract: A lighting system may have a power-supply circuit and at least two strings of solid-state light sources. The power-supply circuit comprises two output terminals where the power-supply circuit supplies a regulated voltage (Vout), and where the regulated voltage (Vout) is periodically activated for a first duration and de-activated for a second duration as a function of a dimming signal. A first string of light sources and a first current regulator are connected in series between the two output terminals, wherein the first current regulator is configured for regulating the current flowing through the first string. A second string of solid-state light sources and a second current regulator are connected in series between the two output terminals, wherein the second current regulator is configured for regulating the current flowing through said second string.

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10).

Abstract: There is herein described a ceramic wavelength converter having a high reflectivity reflector. The ceramic wavelength converter is capable of converting a primary light into a secondary light and the reflector comprises a reflective metal layer and a dielectric buffer layer between the ceramic wavelength converter and the reflective metal layer. The buffer layer is non-absorbing with respect to the secondary light and has an index of refraction that is less than an index of refraction of the ceramic wavelength converter. Preferably the reflectivity of the reflector is at least 80%, more preferably at least 85% and even more preferably at least 95% with respect to the secondary light emitted by the converter.

Abstract: In various embodiments, an optical element is provided. The optical element includes an imaging region with a lens arrangement which is aligned along an optical axis, and a collimation region which surrounds the imaging region to the side of the optical axis.

Abstract: A display device is disclosed. In an embodiment a display device includes at least one connection carrier comprising a multiplicity of switches and a multiplicity of light-emitting diode chips, wherein each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier, wherein each switch is designed for driving at least one light-emitting diode chip, and wherein the light-emitting diode chips are imaging elements of the display device.

Abstract: A method of producing optoelectronic components includes A) providing a carrier and optoelectronic semiconductor chips including contact elements arranged on a contact side of the semiconductor chip; B) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides face the carrier during application; C) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chip not covered by the carrier; D) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; E) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chip into radiation of a different wavelength range; and F) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips.

Abstract: An end cap for elongate lighting modules having an exposed end surface and a front light emitting surface may include a body wall which may be brought into abutment against said end surface, and a peripheral wall extending sidewise of and around the body wall, the peripheral wall having a discontinuity therein positionable at the front light emitting surface. The body wall may include at least one sealing mass reception cavity facing towards the peripheral wall.

Abstract: A pulse oximetry device includes a light emission device configured to emit light with a wavelength in a first wavelength interval and light with a wavelength in a second wavelength interval, a first light detector configured to detect light with a wavelength in the first wavelength interval, but not to respond to light with a wavelength in the second wavelength interval, and a second light detector configured to detect light with a wavelength in the first wavelength interval and detect light with a wavelength in the second wavelength interval, wherein the first light detector has a first light reception surface, the second light detector has a second light reception surface, and the first light reception surface and the second light reception surface are arranged in a common plane and are interleaved with one another.

Abstract: An optoelectronic arrangement and a lighting device are disclosed. In an embodiment the arrangement includes a semiconductor chip for generating radiation and a radiation conversion element located downstream of the semiconductor chip with respect to a radiation direction, wherein the radiation conversion element includes a plurality of conversion bodies each with a longitudinal extension axis, and wherein a spatial orientation of the longitudinal extension axes has a preferred direction.

Abstract: An organic light-emitting diode includes a carrier; at least two electrodes; an organic layer sequence having at least one active zone that generates light; and light-opaque visual protection layers that have no influence on an emission characteristic of the organic layer sequence and the organic light-emitting diode, one of which is located directly on the carrier, the organic layer sequence is located between the two electrodes and one of the electrodes is attached directly to the carrier, the visual protection layer, viewed in a plan view, completely surrounds the organic layer sequence, at least one of the electrodes is provided with a structuring in a region adjacent to the organic layer sequence in a plan view, in a plan view, the structuring is located completely beside the organic layer sequence, and the structuring is hidden by the visual protection layer for a viewer from outside the organic light-emitting diode.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate, wherein the semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged between the first semiconductor region and the second semiconductor region, wherein the first semiconductor region faces the carrier substrate, the semiconductor layer sequence includes first recesses formed in the first semiconductor region and that do not separate the active layer, the semiconductor layer sequence includes second recesses that at least partially separate the first semiconductor region and the active layer, and the second recesses adjoin a first recess or are arranged between two first recesses.

Abstract: A method for producing a laser activated remote phosphor (LARP) sub-assembly, which may comprise: preparing a target composed of a material; activating the target such that the material is released from the target; directing the material released from the target in the direction of a wavelength converter and depositing the material released from the target onto a major surface of the wavelength converter creating a bonding film.

Abstract: Techniques are disclosed for enhancing indoor navigation using light-based communication (LCom). In some cases, an LCom-enabled luminaire configured as described herein may acquire user data from a local computing device and relay it to a server that tracks and analyzes the data to assess statistics for the luminaire's local spatial environment. The disclosed luminaire may receive from a local computing device a request for indoor navigation to a target of interest, such as a remote computing device. The luminaire may relay that request to a downstream luminaire, which delivers the request to the target. The target may respond with data that allows for tracking of its location and indoor navigation thereto, regardless of whether that target is moving or stationary. In a network of such luminaires, data distribution via inter-luminaire communication may be provided, for example, via an optical interface or other wired or wireless communication.

Abstract: Techniques and architecture are disclosed for navigating an area with multi-panel luminaires configured to display fiducial patterns. In an embodiment, a system includes a plurality of luminaires located in an area and configured to display one or more fiducial patterns recognizable by a mobile computing device. The luminaire includes a plurality of panels, each panel associated with one or more solid-state light sources. The luminaire also includes at least one driver configured to control the light sources to transmit light through the plurality of panels at varying light intensities to display a fiducial pattern and configured to detect errors in the display of the fiducial pattern.

Abstract: An optoelectronic semiconductor device and an apparatus with an optoelectronic semiconductor device are disclosed. In an embodiment the optoelectronic semiconductor component has an emission region including a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer for generating radiation, and a protection diode region. The semiconductor component has a contact for electrically contacting the semiconductor component externally. The contact has a first contact region that is connected to the emission region in an electrically conductive manner. The contact has further a second contact region that is spaced apart from the first contact region and connected to the protection diode region in an electrically conductive manner. The first contact region and the second contact region can be electrically contacted externally by a mutual end of a connecting line.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier including two metal layers, wherein the metal layers are detachable from one another, securing an optoelectronic semiconductor chip on the first metal layer of the carrier, and mechanically detaching the second metal layer from the first metal layer.

Abstract: An electronic device includes a carrier and a semiconductor chip, wherein the carrier includes a first dielectric layer and a second dielectric layer, a thermal conductivity of the first dielectric layer exceeds a thermal conductivity of the second dielectric layer, the second dielectric layer is arranged on the first dielectric layer and partially covers the first dielectric layer, the semiconductor chip is arranged on the carrier in a mounting area in which the first dielectric layer is not covered by the second dielectric layer, and the carrier includes a solder terminal for electrical contacting arranged on the second dielectric layer.

Abstract: The invention relates to an optoelectronic component (10) comprising —a radiation-emitting semiconductor chip (2), —a conversion element (8) which is suitable for converting at least one part of the radiation (12) emitted by the semiconductor chip (2) into a converted radiation (13), said converted radiation (13) having a longer wavelength than the emitted radiation (12), and —a cover (9) which is permeable at least to the converted radiation (13) and which follows the conversion element (8) in a main emission direction, wherein —the conversion element (8) comprises a quantum dot converter material (7), —the conversion element (8) is arranged on a cover (9) inner face (15) facing the semiconductor chip, and —the cover has silicon (9) or consists of silicon.