Patents Assigned to OSRAM
  • Patent number: 10017102
    Abstract: Various embodiments may relate to a lighting device, including at least one primary light source for generating primary light, a phosphor volume spaced apart from the at least one primary light source and serving for at least partly converting the primary light into secondary light having a different wavelength, at least one light sensor for detecting light generated by the at least one primary light source, and an evaluation unit for determining a case of damage of the phosphor volume on the basis of sensor data of at least one light sensor. The lighting device includes at least one additional light source for irradiating the phosphor volume, and is designed to operate the at least one additional light source, the at least one light sensor and the evaluation unit with the primary light source switched off.
    Type: Grant
    Filed: February 4, 2015
    Date of Patent: July 10, 2018
    Assignee: OSRAM GMBH
    Inventors: Jan-Erik Künecke, Georg Forster
  • Patent number: 10020433
    Abstract: An optoelectronic component includes a housing, wherein a cavity is formed on an upper side of the housing, which is delimited by a wall, the housing has an empty space, the wall is arranged between the cavity and the empty space, the housing has a surface, the empty space is arranged between the surface of the housing and the wall, the wall and the surface are arranged at least partially parallel to each other, the wall includes an optically transparent material, and the wall has a wall thickness of 1 ?m to 100 ?m.
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: July 10, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Luca Haiberger
  • Patent number: 10020429
    Abstract: Conversion LED emits primary radiation (peak wavelength 435 nm to 455 nm) and has a luminescent substance-containing layer positioned to intercept the primary radiation and convert it into secondary radiation. First and second luminescent substances are used. The first luminescent substance is a A3B5O12:Ce garnet type emitting yellow green having cation A=75 to 100 mol. % Lu, remainder Y and a Ce content of 1.5 to 2.9 mol. %, where B=10 to 40 mol. % Ga, remainder Al. The second luminescent substance is of the MAlSiN3:Eu calsine type which emits orange red, where M is Ca alone or at least 80% Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, wherein some of the Al up to 20%, can be replaced by B, and wherein N can be partially replaced by O, F, Cl, alone or in combination.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: July 10, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Frank Baumann, Norbert Boenisch, Tim Fiedler, Frank Jermann, Stefan Lange, Reiner Windisch
  • Patent number: 10018311
    Abstract: A lighting device may include a strip-like carrier with a first and a second opposed faces with light radiation sources on the first face, and a strip-like profiled member having a pi-shaped cross section, including a channel-like central portion with a bottom wall and side walls. The strip-like carrier is arranged in the profiled member with the first face and the light radiation sources facing outwardly of the central portion and the second face facing the bottom wall of central portion. The pi-shaped profiled member includes two sidewise extensions laterally to the central portion, to provide lateral fixing formations for the lighting device.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: July 10, 2018
    Assignee: Osram GmbH
    Inventors: Simon Bobbo, Alberto Zanotto
  • Publication number: 20180190874
    Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.
    Type: Application
    Filed: June 16, 2016
    Publication date: July 5, 2018
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Simeon Katz, Kai Gehrke, Massimo Drago, Joachim Hertkorn
  • Patent number: 10015868
    Abstract: Solid-state lamps having an electronically adjustable light beam distribution are disclosed. In accordance with some embodiments, a lamp configured as described herein includes a plurality of solid-state emitters (addressable individually and/or in groupings) mounted over a non-planar interior surface of the lamp. The interior mounting surface can be concave or convex, as desired, and may be of hemispherical or hyper-hemispherical geometry, among others, in accordance with some example embodiments. In some embodiments, the heat sink of the lamp may be configured to provide the interior mounting surface, whereas in some other embodiments, a separate mounting interface, such as a parabolic aluminized reflector (PAR), a bulged reflector (BR), or a multi-faceted reflector (MR), may be included to such end. Also, the lamp may include one or more focusing optics for modifying its output. In some cases, a lamp provided as described herein may be configured for retrofitting existing lighting structures.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: July 3, 2018
    Assignee: OSRAM SYLVANIA Inc.
    Inventors: Michael Quilici, Seung Cheol Ryu, Lori Brock
  • Patent number: 10014488
    Abstract: An optoelectronic component may include a carrier, above which a first electrode is formed. An optically functional layer structure is formed above the first electrode. A second electrode is formed above the optically functional layer structure, the second electrode extending areally over at least one part of the side of the optically functional layer structure which faces away from the carrier. An encapsulation is formed above the first and/or second electrode, the encapsulation encapsulating the optically functional layer structure. An electrically conductive contact structure is arranged in a cutout of the encapsulation on the first and/or second electrode and extends through the encapsulation, for electrically contacting the first and/or second electrode. The contact structure and the encapsulation are formed such that in interaction they encapsulate the first and/or second electrode.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: July 3, 2018
    Assignee: OSRAM OLED GmbH
    Inventor: Philipp Schwamb
  • Patent number: 10014444
    Abstract: An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: July 3, 2018
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Karl Engl, Georg Hartung, Johann Eibl, Michael Huber, Markus Maute
  • Patent number: 10008639
    Abstract: A method for producing optoelectronic semiconductor components (100) is specified, wherein a carrier (1) having a carrier main side (11) is provided. Furthermore, a plurality of singulated optoelectronic semiconductor chips (2) are provided, wherein the semiconductor chips (2) each have a main emission side (21) and a contact side (22) opposite the main emission side (21). The singulated semiconductor chips (2) are then applied to the carrier main side (11), such that the contact side (22) in each case faces the carrier main side (11). In regions between the semiconductor chips, a mask frame (3) is applied, wherein the mask frame (3) is a grid of partitions (31). In a plan view of the carrier main side (11), each semiconductor chip (2) is surrounded all around by the partitions (31). The semiconductor chips (2) are potted with a conversion material (4) such that a conversion element (41) is respectively formed on the semiconductor chips (2).
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: June 26, 2018
    Assignee: OSRAM OPTO SEMICONDUCTOR GMBH
    Inventors: Britta Göötz, Frank Singer, Lutz Höppel, Jürgen Moosburger
  • Patent number: 10008440
    Abstract: A carrier for an electrical component, including a substrate having a surface, with an electrically conductive contact zone arranged on the surface of the substrate, a solder pad disposed on the contact zone, and a solder stop structure disposed laterally next to the solder pad. The solder stop structure has a surface that is less wettable with liquid solder than a surface of the contact zone. The solder stop structure subdivides the contact zone into a first zone region and a second zone region, with the first zone region having the solder pad. The solder stop structure extends over a portion of a total length of the contact zone such that the contact zone has a free connecting region that is free of the solder stop structure. The first and second zone regions are connected to one another by means of the free connecting region.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: June 26, 2018
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Stefan Brandl, Tilman Eckert
  • Patent number: 10008487
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence with an upper face and a lower face opposite the upper face, wherein the semiconductor layer sequence has an active layer that generates electromagnetic radiation, and a plurality of contact elements that electrically contact the semiconductor layer sequence arranged on the upper face, wherein the semiconductor chip is a thin-film semiconductor chip, the lower face is a radiation decoupling surface through which the radiation generated in the semiconductor layer sequence is decoupled, the contact elements can be electrically actuated individually and independently from one another, and the semiconductor layer sequence has a thickness of at most 3 ?m.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: June 26, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Isabel Otto, Alexander F. Pfeuffer
  • Patent number: 10008649
    Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: June 26, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
  • Publication number: 20180171508
    Abstract: There is herein described a method of making a single crystal wavelength conversion element from a polycrystalline wavelength conversion element, a single crystal wavelength conversion element, and a light source containing same. By making the single crystal wavelength conversion element from a polycrystalline wavelength conversion element, the method provides greater flexibility in creating single crystal wavelength conversion elements as compared to melt grown methods for forming single crystals. Advantages may include higher activator contents, forming more complex shapes without machining, providing a wider range of possible activator gradients and higher growth rates at lower temperatures.
    Type: Application
    Filed: April 28, 2016
    Publication date: June 21, 2018
    Applicant: OSRAM SYLVANIA Inc.
    Inventors: John Kelso, Alan Piquette, David Johnston
  • Publication number: 20180166614
    Abstract: A method of producing a converter component for an optoelectronic lighting apparatus includes forming a layer stack having an injection-molded or extruded conversion layer and an injection-molded or extruded diffuser layer. A converter component for an optoelectronic lighting apparatus includes a layer stack including an injection-molded or extruded conversion layer, and an injection-molded or extruded diffuser layer.
    Type: Application
    Filed: May 4, 2016
    Publication date: June 14, 2018
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Markus Richter, Martin Brandl, Markus Burger, Günter Spath
  • Patent number: 9998026
    Abstract: Techniques are disclosed for assessing the conditions of LEDs and power supplies of solid state lighting systems. The techniques can be used, for example, to measure the capacitance of an output capacitor C in a switch-mode power supply (SMPS), and to measure the condition of the LEDs being driven by that power supply. In some cases, this assessment can be implemented in a lighting controller that controls the lighting system, which may be configured to simultaneously determine C and the conditions of LEDs. In one example case, the techniques can be implemented, for instance, in a micro-controller operating the lighting system. A lighting system implementing the techniques can be periodically assessed so as to provide real-time diagnostic capability. Numerous example embodiments of SMPS LED lighting systems will be apparent in light of this disclosure.
    Type: Grant
    Filed: January 21, 2013
    Date of Patent: June 12, 2018
    Assignee: OSRAM SYLVANIA Inc.
    Inventors: Bernhard Siessegger, Marijan Kostrun
  • Patent number: 9997731
    Abstract: A light emitting component is disclosed. In an embodiment a light-emitting device includes at least one active layer stack configured to generate light, a first electrode electrically contacting the at least one active layer stack, a second electrode electrically contacting the at least one active layer stack and at least one light-emitting face for emitting light. The device further includes a first contact structure electrically conductively connected to the first electrode and a second contact structure electrically conductively connected to the second electrode, wherein the first contact structure laterally surrounds a major part of the at least one light-emitting face and a major part of the second contact structure, and wherein the second contact structure laterally surrounds a major part of the at least one light-emitting face.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: June 12, 2018
    Assignee: OSRAM OLED GMBH
    Inventors: Thorsten Vehoff, Erwin Lang
  • Patent number: 9997559
    Abstract: An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: June 12, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Stefan Groetsch, Matthias Kiessling, Michael Wittmann, Stefan Gruber
  • Patent number: 9997671
    Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: June 12, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Johannes Baur, Berthold Hahn, Volker Haerle, Karl Engl, Joachim Hertkorn, Tetsuya Taki
  • Publication number: 20180156409
    Abstract: An illumination device includes multiple semiconductor primary light sources for emitting respective primary light beams, at least one movable mirror, which can be illuminated by means of the primary light beams, and which can assume at least two angle positions, and a luminophore element, which can be illuminated by means of primary light beams deflected by the at least one mirror. Light spots of the individual primary light beams are locally differentiable on the at least one luminophore element, an overall light spot composed of the light spots of the individual primary light beams is locally differentiable on the at least one luminophore element depending on the angle position of the at least one movable mirror, and at least one beam property of at least one primary light beam incident on the at least one luminophore element is variable during operation of the illumination device.
    Type: Application
    Filed: April 7, 2016
    Publication date: June 7, 2018
    Applicant: OSRAM GMBH
    Inventor: Stephan Schwaiger
  • Patent number: D821636
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: June 26, 2018
    Assignee: OSRAM SYLVANIA Inc.
    Inventor: Courtney P. Hewitt