Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

Abstract: Terahertz spectrometer having a wider range of terahertz radiation source, high temporal resolution of scanning (<0.0.099 ?m or ˜0.3 pico second) over a wider range of scanning (up to ˜100 pico seconds). Also disclosed are exemplary applications of the spectrometer in biomedical, biological, pharmaceutical, and security areas.

Abstract: This invention relates to a novel structure of photovoltaic devices (e.g. photovoltaic cells also called as solar cells) are provided. The cells are based on the micro or nano scaled structures which could not only increase the surface area but also have the capability of self-concentrating the light incident onto the photonics devices. More specifically, the structures are based on 3D structure including quintic or quintic-like shaped micor-nanostructures. By using such structures reflection loss of the light from the cell is significantly reduced, increasing the absorption, which results in increasing the conversion efficiency of the solar cell, and reducing the usage of material while increasing the flexibility of the solar cell. The structures can be also used in other optical devices wherein the reflection loss and absorption are required to enhanced to significantly improve the device performances.

Abstract: An optoelectronic transmitter including a semiconductor substrate, at least one laser source, and a high numerical aperture (NA) waveguide is provided. The laser source is disposed on the semiconductor substrate and configured to emit at least one laser beam. The high numerical aperture (NA) waveguide has an NA greater than or equal to 0.5 and is disposed on the semiconductor substrate. At least a part of the laser beam from the laser source enters the high NA waveguide, wherein no lens is disposed on the light path of the laser beam between the laser source and the high NA waveguide. An optoelectronic receiver and an optoelectronic transceiver are also provided.

Abstract: An optical multiplexer and methods of making and calibrating the same are disclosed. A method of aligning components in a multichannel optical/optoelectronic transmitter includes passively fixing a plurality of light emitters in place on a substrate; adjusting positions of a first lens passing light from a first light emitter and an optical signal transmission medium receiving the light from the first light emitter until a far field spot of the light from the first light emitter is at or near an end of the transmission medium; fixing one or more optical subassemblies on the substrate; and adjusting positions of the optical subassembly(ies) to align light from the remaining light emitters with the far field spot. Some embodiments include multiple optical subassemblies, each including a lens and a filter. Other embodiments include one optical subassembly including a mirror and a beam combiner.

Abstract: Exemplary embodiments described herein include a bi-directional Free Space Optical (FSO) communication unit that may be used in a multi-node FSO communication system. The bi-directional FSO unit may include a co-boresighted optical unit such that received and transmitted beams are coincident through a common aperture. Embodiments described herein may be used to correct or accommodate the alignment errors of the received and transmitted beams.

Abstract: Methods for realizing integrated lasers and photonic integrated circuits on complimentary metal-oxide semiconductor (CMOS)-compatible silicon (Si) photonic chips, potentially containing integrated electronics, are disclosed. The integration techniques rely on light coupling with integrated light coupling elements such as turning mirrors, lenses, and surface grating couplers. Light is coupled from between two or more substrates using the light coupling elements. The technique can realize integrated lasers on Si where a gain flip chip (the second substrate) is bonded to a Si chip (the first substrate) and light is coupled between a waveguide in the gain flip chip to a Si waveguide by way of a turning mirror or grating coupler in the flip chip and a grating coupler in the Si chip. Integrated lenses and other elements such as spot-size converters can also be incorporated to alter the mode from the gain flip chip to enhance the coupling efficiency to the Si chip.

Abstract: The invention relates to an optical isolator comprising a polarizer adapted to polarize a beam of incident light to form a beam of polarized light, an analyzer adapted to transmit said beam of polarized light and to polarize back-reflected light, a magneto-optical element disposed between the polarizer and the analyzer, which magneto-optical element rotates the polarization direction of said beam of polarized light, and a magnet generating a magnetic field penetrating said magneto-optical element. It is an object of the invention to provide a temperature-compensated optical isolator that achieves a high degree of isolation at a minimum insertion loss over a given temperature range, without any need of manual tuning. The invention proposes to make provision for an automatic actuator mechanically connected to said magneto-optical element to move said magneto-optical element relative to said magnet in response to a temperature variation or in response to a variation of the wavelength of the incident light.

Abstract: An apparatus and method pertaining to a perpetual energy harvester. The harvester absorbs ambient infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester.

Abstract: An optical system includes a laser cavity on a base. The laser cavity generates a light signal in response to application of an electrical current to the laser cavity. The system includes first electronics that apply a target level of the electrical current to the laser cavity so as to cause the laser cavity to generate the light signal. The light signal experiences mode hops at electrical current levels that shift to higher current levels in response to increasing laser operation times. A first one of the mode hops occurs at a first current level and a second one of the mode hops occurs at a second current level that is higher than the first current level. The system also includes a phase shifter that interacts with the laser cavity so as to shift the mode hops to lower current levels than occur in the absence of the phase shifter.

Abstract: This invention relates to a system and their manufacturing technologies for enhanced endoscopic diagnosis. More particularly, this invention is related to endoscope capsule system, which can harvest the energy from the body to operate the system, and thereby it can increase its operating time as high as 80 hours, and can reduce the size of the capsule system. Furthermore, the system also is comprising of an antenna for transmitting and receiving the data to outside and/or to communicate with the system. The diagnosis procedure using the capsule system can be applicable to all patients with various age groups, where capsule size and large set of images for accuracy in diagnosis, are required.

Abstract: This invention relates to the means for detection of molecular and chemical matter utilizing multiple techniques covering electronics, optics, and imaging techniques. More particularly, this invention is related to detecting levels of certain molecules inside the body through non-invasive contact or non-contact with the body. More specifically, this invention is related to the means to detect levels of molecules associated with metabolic diseases, more particularly the early diagnosis of the disease, especially diabetes. This invention also relates to a medical device that utilizes electromagnetic waves of varying wavelengths and detects waves returned to the device.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A sensing device able to do concurrent real time detection of different kinds of chemical, biomolecule agents, or biological cells and their respective concentrations using optical principles. The sensing system can be produced at a low cost (below $1.00) and in a small size (˜1 cm3). The novel sensing system may be of great value to many industries, for example, medical, forensics, and military. The fundamental principles of this novel invention may be implemented in many variations and combinations of techniques.

Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

Abstract: A real-time data traffic optimization system is provided. The data traffic optimization system is configured to optimize data traffic between ingress and egress directions and includes a data traffic handler; a congestion window handler; and a controller block for coordinating the data traffic and data attributes in between the data traffic handler and the congestion window handler. The data optimization system further comprises a classifier for detecting and classifying incoming data traffic; a data monitor for monitoring and manipulating data attributes; and an adjuster for increasing and decreasing data congestion and adjusting the data transmitting and retransmitting time frame. The real-time data traffic optimization system can be embedded within a pluggable transceiver or an active optical cable.

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

Abstract: Rare earth oxides doped multicomponent glass fibers for laser generation and amplification, including a core and a cladding, the core comprising at least 2 weight percent glass network modifier selected from BaO, CaO, MgO, ZnO, PbO, K2O, Na2O, Li2O, Y2O3, or combinations; wherein the mode of the core is guided with step index difference between the core and the cladding, a numerical aperture of the fiber is between 0.01 and 0.04; core diameter is from 25 to 120 micron, and a length of the gain fiber is shorter than 60 cm.

Abstract: Apparatus and method of reducing light leakage from display devices are described. An embodiment of reducing light leakage from display devices includes providing an optical shutter that is configured to block light from a display device from being emitted into the ambient environment when the display device is in a bright state and configured to display visual information to the user. The optical shutter can be configured to transmit light from the ambient environment to the user when the display device is not displaying visual information.