Patents Assigned to Photon, Inc.
  • METHOD FOR MANUFACTURING OPTICAL ELECTRICAL MODULE AND SUBSTRATE OF AN OPTICAL ELECTRICAL MODULE
    Publication number: 20170123156
    Abstract: A method for manufacturing an optical electrical module includes steps as follow. Forming first patterns on a first substrate by a first mask, wherein an angle between a primary flat of the first substrate and an arrangement direction having a maximum number of first pattern units of the first mask is (?+90°*n), wherein ? is between 22° to 39°, and n is an integer. Subjecting the first substrate to a first patterning process using the first patterns as a mask to form accommodating grooves and a reflective groove connected with the accommodating grooves in the first substrate, wherein an extension direction of each of the accommodating grooves is perpendicular to an extension direction of the reflective groove.
    Type: Application
    Filed: January 6, 2017
    Publication date: May 4, 2017
    Applicant: Centera Photonics Inc.
    Inventors: Shang-Jen Yu, Chun-Chiang Yen
  • LIGHT EMITTING DEVICE
    Publication number: 20170125645
    Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.
    Type: Application
    Filed: January 13, 2017
    Publication date: May 4, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Shao-Ying Ting, Kuan-Chieh Huang, Jing-En Huang, Yu-Feng Lin, Yi-Ru Huang
  • Nitride semiconductor structure and semiconductor light emitting device including the same
    Patent number: 9640712
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: May 2, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Shen-Jie Wang
  • Rare-earth doped gain fibers
    Patent number: 9640936
    Abstract: Rare earth oxides doped multicomponent glass fibers for laser generation and amplification, including a core and a cladding, the core comprising at least 2 weight percent glass network modifier selected from BaO, CaO, MgO, ZnO, PbO, K2O, Na2O, Li2O, Y2O3, or combinations; wherein the mode of the core is guided with step index difference between the core and the cladding, a numerical aperture of the fiber is between 0.01 and 0.04; core diameter is from 60 to 150 micron, and a length of the gain fiber is shorter than 60 cm.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: May 2, 2017
    Assignee: AdValue Photonics, Inc.
    Inventors: Shibin Jiang, Tao Luo, Qing Wang, Lei Pan
  • Multiple quantum well structure and method for manufacturing the same
    Patent number: 9640716
    Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: May 2, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Chi-Feng Huang, Hsin-Chiao Fang, Chi-Hao Cheng
  • Divided-aperture infra-red spectral imaging system for chemical detection
    Patent number: 9625318
    Abstract: A divided-aperture infrared spectral imaging (DAISI) system that is structured to provide identification of target chemical content in a single imaging shot based on spectrally-multiplexed operation. The system is devoid of spectral scanning acquisition of infrared (IR) spectral signatures of target content with an IR detector and does not require content.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: April 18, 2017
    Assignee: Rebellion Photonics, Inc.
    Inventors: Robert T. Kester, Nathan A. Hagen
  • High resolution wide field of view digital night vision system
    Patent number: 9618746
    Abstract: A wide field of view night vision system includes a head attachment apparatus configured to attach to a user's head and a night vision subsystem. The night vision subsystem includes one or more digital night vision image sensors attached to the head attachment apparatus. Each sensor receives input light and produces a digital image of the input light. A processor processes the digital image(s) to produce a wide-field image. The wide-field image spans at least 60 degrees of a user's horizontal field of view. A display and eyepiece attached to the head attachment apparatus receives and displays the wide-field image. The eyepiece is positionable between the display and the user's eye to image the wide-field image into the user's eye.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: April 11, 2017
    Assignee: SA Photonics, Inc.
    Inventor: Michael P. Browne
  • LIGHT EMITTING DIODE DEVICE
    Publication number: 20170084791
    Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly.
    Type: Application
    Filed: November 30, 2016
    Publication date: March 23, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Yu-Yun Lo, Yi-Ru Huang, Chih-Ling Wu, Tzu-Yang Lin, Yun-Li Li
  • LIGHT EMITTING DEVICE PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20170084800
    Abstract: A light emitting device package structure includes at least one light emitting device, a wavelength conversion adhesive layer, and a protection element. The light emitting device has an upper surface, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface of the light emitting device and has a first edge and a second edge opposite to each other. The protection element encapsulates the side surface of the light emitting device and the second edge of the wavelength conversion adhesive layer and exposes the lower surface of the light emitting device. A third edge of the protection element is aligned with the first edge of the wavelength conversion adhesive layer.
    Type: Application
    Filed: September 19, 2016
    Publication date: March 23, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Cheng-Wei Hung, Po-Tsun Kuo, Long-Chi Du, Jui-Fu Chang, Yu-Feng Lin
  • Divided-aperture infra-red spectral imaging system
    Patent number: 9599508
    Abstract: Various embodiments disclosed herein describe a divided-aperture infrared spectral imaging (DAISI) system that is adapted to acquire multiple IR images of a scene with a single-shot (also referred to as a snapshot). The plurality of acquired images having different wavelength compositions that are obtained generally simultaneously. The system includes at least two optical channels that are spatially and spectrally different from one another. Each of the at least two optical channels are configured to transfer IR radiation incident on the optical system towards an optical FPA unit comprising at least two detector arrays disposed in the focal plane of two corresponding focusing lenses. The system further comprises at least one temperature reference source or surface that is used to dynamically calibrate the two detector arrays and compensate for a temperature difference between the two detector arrays.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: March 21, 2017
    Assignee: Rebellion Photonics, Inc.
    Inventors: Robert Timothy Kester, Nathan Adrian Hagen
  • Enhancing planarization uniformity in optical devices
    Patent number: 9595629
    Abstract: An optical device is formed from a device precursor having a layer of a light-transmitting medium on a base. A first feature is formed on the device precursor. The device precursor is then processed such that a stop layer protects the first feature and a portion of the device precursor is above the top of the stop layer. The first feature is between the base and the stop layer. The device precursor is planarized such that the portion of the device precursor located above the top of the stop layer becomes flush with the top of the portion of the stop layer that is present on the device precursor after the planarization. During the planarization, the stop layer acts as a planarization stop that slows or stops the rate of planarization.
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: March 14, 2017
    Assignee: Mellanox Technologies Silicon Photonics Inc.
    Inventors: Wei Qian, Joan Fong, Dazeng Feng, Jay Jie Lai
  • Temperature control of components on an optical device
    Patent number: 9594213
    Abstract: A method of forming an optical device includes using a photomask to form a first mask on a device precursor. The method also includes using the photomask to form a second mask on the device precursor. The second mask is formed after the first mask. In some instances, the optical device includes a waveguide positioned on a base. The waveguide is configured to guide a light signal through a ridge. A heater is positioned on the ridge such that the ridge is between the heater and the base.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: March 14, 2017
    Assignee: Mellanox Technologies Silicon Photonics Inc.
    Inventors: Wei Qian, Dazeng Feng, Cheng-Chih Kung, Jay Jie Lai
  • Controlling the composition of electro-absorption media in optical devices
    Patent number: 9588294
    Abstract: Forming an optical device includes growing an electro-absorption medium in a variety of different regions on a base of a device precursor. The regions include a component region and the regions are selected so as to achieve a particular chemical composition for the electro-absorption medium included in the component region. An optical component is formed on the device precursor such that the optical component includes at least a portion of the electro-absorption medium from the component region. Light signals are guided through the electro-absorption medium from the component region during operation of the component.
    Type: Grant
    Filed: July 2, 2014
    Date of Patent: March 7, 2017
    Assignee: Mellanox Technologies Silicon Photonics Inc.
    Inventors: Joan Fong, Wei Qian, Dazeng Feng, Mehdi Asghari
  • Temperature control of components on an optical device
    Patent number: 9588360
    Abstract: The optical device includes a waveguide positioned on a base and a modulator positioned on the base. The modulator includes an electro-absorption medium. The waveguide is configured to guide a light signal through the modulator such that the light signal is guided through the electro-absorption medium. A heater is positioned on the electro-absorption medium such that the electro-absorption medium is between the base and the heater.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: March 7, 2017
    Assignee: Mellanox Technologies Silicon Photonics Inc.
    Inventors: Dazeng Feng, Wei Qian, Zhi Li, Jacob Levy
  • LIGHT EMITTING DIODE PACKAGE STRUCTURE
    Publication number: 20170062664
    Abstract: A LED package structure including a carrier substrate, a flip-chip LED and a molding compound is provided. The carrier substrate includes a main body and a patterned conductive layer embedded in the main body. The main body is composed of polymer material. The main body has a cavity, and a bottom surface of the cavity is aligned with an upper surface of the patterned conductive layer. A difference in coefficient of thermal expansion between the main body in a rubbery state and the patterned conductive layer is smaller than 30 ppm/° C. The flip-chip LED is disposed inside the cavity and electrically connected to the patterned conductive layer. The molding compound is disposed inside the cavity and encapsulates the flip-chip LED. A vertical distance between a top surface of the molding compound and the bottom surface of the cavity is smaller than or equal to a depth of the cavity.
    Type: Application
    Filed: November 14, 2016
    Publication date: March 2, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Yu-Feng Lin, Po-Tsun Kuo, Meng-Ting Tsai
  • LIGHT EMITTING DIODE AND MANUFACTURE METHOD THEREOF
    Publication number: 20170062653
    Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.
    Type: Application
    Filed: September 2, 2016
    Publication date: March 2, 2017
    Applicant: Genesis Photonics Inc.
    Inventors: Tsung-Syun Huang, Jing-En Huang, Yu-Chen Kuo, Yan-Ting Lan, Kai-Shun Kang, Fei-Lung Lu, Teng-Hsien Lai, Yi-Ru Huang
  • Optical electrical module used for optical communication
    Patent number: 9581772
    Abstract: An optical electrical module includes a first substrate, a second substrate, a bearing portion and at least one optical electrical element. The second substrate is combined with the first substrate and has a reflective surface facing the first substrate. The bearing portion is disposed between the first substrate and the second substrate to limit at least one light guide element. The optical electrical element is disposed on a surface of the first substrate facing the reflective surface and faces the reflective surface. The optical electrical element is configured for providing or receiving light signals. The reflective surface and the light guide element are disposed on an optical path of the light signals.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: February 28, 2017
    Assignee: Centera Photonics Inc.
    Inventors: Hsiao-Chin Lan, Shang-Jen Yu
  • Analysis of stimulus by RFID
    Patent number: 9581625
    Abstract: The present invention is directed to an RFID device. The RFID device includes a brace affixed to an inductor or capacitor. The brace is constructed from a material structurally responsive to a predetermined stimulus, such that stimulus-responsive structural alterations to the brace structurally alters the inductor, capacitor, or other RFID subcomponent of the RFID circuit capable of generating a current alteration, which in turn alters the signal frequency of the RFID.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: February 28, 2017
    Assignee: U.S. Photonics, Inc.
    Inventors: Jacob Conner, Ryan Giedd
  • Rare-earth doped gain fibers
    Patent number: 9581760
    Abstract: Rare earth oxides doped multicomponent glass fibers for laser generation and amplification, including a core and a cladding, the core comprising at least 2 weight percent glass network modifier selected from BaO, CaO, MgO, ZnO, PbO, K2O, Na2O, Li2O, Y2O3, or combinations; wherein the mode of the core is guided with step index difference between the core and the cladding, a numerical aperture of the fiber is between 0.01 and 0.04; core diameter is from 25 to 120 micron, and a length of the gain fiber is shorter than 60 cm.
    Type: Grant
    Filed: January 26, 2015
    Date of Patent: February 28, 2017
    Assignee: AdValue Photonics, Inc.
    Inventors: Shibin Jiang, Tao Luo, Qing Wang, Lei Pan
  • Light emitting chip
    Patent number: 9577154
    Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from ?0.2 volts to ?1.8 volts.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: February 21, 2017
    Assignee: Genesis Photonics Inc.
    Inventors: Yu-Yun Lo, Yi-Fan Li, Chih-Ling Wu, Yi-Ru Huang, Jing-En Huang, Shao-Ying Ting