Abstract: A method and an apparatus for switching a beam from a first port to a second port in an optical switch are described. Switching is performed by a single-axis beam steering element and one or more actuatable beam diffraction devices. Each beam diffraction device is actuatable between diffracting and non-diffracting states. Each beam diffraction device is configured to deflect the optical beam when in the diffracting state such that at least part of the optical beam is diffracted outside a detection area of a column of I/O ports. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The present invention includes an electron-discharge signal system with a supercharged electron source and process therefor. The system may be any signal modification unit such as a klystron, magnetron, traveling wave tube, etc. The system includes a heat-responsive electron source, supercharger, collector, a wave modification assembly, and a bleeder module. The electron source discharges an electron beam along a predetermined electron path. The supercharger heats the electron source upon absorption of electromagnetic radiation of a predetermined signal characteristic redirected by the system. The bleeder module redirects a portion of the system's output signal to the supercharger, which heats in response thereto. In other embodiments, the system may be operated entirely by electromagnetic radiation from a freestanding signal source.

Abstract: A high efficiency electro-optic dendrimer based technology for nanophotonic integrated circuit devices is presented. In particular, a high power terahertz (THz) source is implemented using an electro-optic dendrimer via electro-optic rectification. Electro-optic rectification provides inherent power scalability, because, pump-THz conversion is not limited either by emission saturation or by heat dissipation. Low dielectric loss and high electro-optic coefficient of dendrimer along with a waveguide structure provides higher output power and tunable THz power generation. A dendrimer fiber array is also disclosed by means of which the input/output signals are connected to multiple components and devices.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Abstract: A photoelectric device package and a detachable package structure are provided. The photoelectric device package includes a bottom-plate, a top-plate, at least one photoelectric device, and at least one light-guiding element. The bottom-plate has a first carrying part and a first substrate part on the first carrying part. The first carrying part has first alignment portions. The first substrate part has second alignment portions. The top-plate has a second carrying part and a second substrate part on the second carrying part. The second carrying part has third alignment portions. The second substrate part has fourth alignment portions. The top-plate and the bottom-plate are assembled by the first and third alignment portions. The first and second substrate parts are positioned by the second and fourth alignment portions. Each photoelectric device is disposed on the first substrate part. Each light-guiding element is disposed between the first and second substrate parts.

Abstract: Apparatus and method of making an improved moisture-resistant package for a MEMS device having movable parts, the package including a substrate, a translucent cover over the substrate, a seal and moisture barrier and a plurality of parallel sidewalls around the periphery of the substrate and cover. The sidewalls have ends and an area between the sidewalls, and the sidewalls separate the substrate and cover by a sufficient distance to provide clearance for the movement of the movable parts. The package is sealed using a glue layer that at least partially fills the area between the sidewalls, and lies between the ends of the sidewalls and one of the substrate or cover. The glue layer causes the substrate or cover, respectively, to adhere to the ends of the sidewalls. The glue layer and the sidewalls together prevent moisture from entering the package.

Abstract: The invention relates to a method and algorithm for stabilizing the output state of an optical transceiver. The method includes comparing a signal quality monitor (SQM) register value with a predetermined threshold. If the SQM register value is less than or equal to the predetermined threshold, a microcontroller unit (MCU) reads and determines the rx_lol state bit value of a clock and data recovery (CDR) chip. If the rx_lol state bit value reaches a low logic level value at least 3 times, the MCU converts the state bit values of rx_lol and mod_nr into low logic level values, or else, convert the state bit values of rx_lol and mod_nr into high logic level values. If the SQM register value is greater than the predetermined threshold then the state bit values of rx_lol and mod_nr will be left unchanged. When there is no data input to the CDR chip, the method of the present invention will maintain rx_lol and mod_nr at high or low logic level values to stabilize the output state of the optical transceiver.

Abstract: The present invention provides an optoelectronic module including a substrate, an optoelectronic device and a control unit. The substrate includes a top surface, a bottom surface, a concave structure, a through hole structure and a conductive material. The concave structure is disposed on the top surface. The through hole structure passes through the substrate from the top surface to the bottom surface. The conductive material is filled into the through hole structure. The optoelectronic device is disposed on the substrate for providing or receiving an optical signal. The control unit is configured on the top surface and electrically connected to the conductive material and the optoelectronic device for controlling the optoelectronic device.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1?xN (0<x<1) while the stress control layer is made from AlxInyGa1?x?yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover.

Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

Abstract: An optical module housing that may be easily seated, locked in and removed from a socket, thereby reducing or eliminating potential damage to the module and socket, and methods for making and using the housing are disclosed. The module housing generally includes a chassis, one or more pivots attached to the chassis, a latch configured to secure the housing in a corresponding slot when in a locked position, a slider configured to be in contact with and/or connected to the latch and to move the latch relative to the chassis, the latch and/or the slider being configured to move on and/or around the pivot(s) and a handle configured to be in contact with and/or connected to the slider such that when the handle moves from a first position to a second position, the slider and latch move to the locked and/or an unlocked positions.

Abstract: An ice resistant structure is provided which includes a self-supporting, structural platform, a retaining, protective layer and a subsurface anti-icing (AI) and/or de-icing (DI) layer. The retaining, protective layer is disposed over the self-supporting, structural platform. The subsurface anti-icing (AI) and/or de-icing (DI) layer is located between the self-supporting, structural platform and the retaining, protective layer. The subsurface Al and/or DI layer is a functional layer such that an Al and/or DI agent is released to a surface of the retaining protective layer by an activation mechanism responsive to a change in an environmental condition.

Abstract: An optical isolator capable of creating a larger safe buffer area for optical beam(s) and a manufacturing method thereof are disclosed. The optical isolator includes a sandwich type wafer, a first polarizer, a Faraday rotator and a second polarizer. The first polarizer works as the incident plane of the FSI (free space isolator), while the second polarizer works as the outgoing plane of the FSI. The direction in which the second polarizer passes the polarized beam is at a 45° angle with respect to the first polarizer. The manufacturing method includes marking the edge of the second polarizer. FSIs processed by this method provide a larger buffer area for the optical beam(s) and/or a lower manufacturing cost, even though the size of the FSI is unchanged.

Abstract: The present invention includes a system and process for measuring an item in an energy rich environment. The measurement RFID device combusts at a energy level less than that produced by the system, whether the energy derives from the item or an external source.

Abstract: A stretchable photovoltaic device, a stretchable photovoltaic module and a carrier for facilitating formation of a stretchable photovoltaic device and/or module are provided. The stretchable photovoltaic device includes a stretchable part, at least one photovoltaic cell and a surface over which that at least one photovoltaic cell is disposed. The stretchable part has a given length that is operable to change in response to a force being applied to the device. The given length may, for example, elongate when the force causes the device to elongate. Alternative and/or additionally, the given length may compress when the force causes the device to compress.

Abstract: A light source module includes a substrate, at least two light emitting diode (LED) chips and at least one dummy chip. The LED chips are disposed on the substrate. The dummy chip is disposed on the substrate and located between the LED chips. The LED chips, the dummy chip and the substrate are electrically connected to one another. The dummy chip is used to redirect a lateral light emitted from the LED chips.

Abstract: A system has a first rack with a first set of servers and a first top of rack switch and a second rack with a second set of servers and a second top of rack switch. A first optical switch is connected to the first top of rack switch. A second optical switch is connected to the second top of rack switch and the first optical switch. The first optical switch and the second optical switch each employ wavelength selective switching.

Abstract: An optical time delay control device for controllably altering the transit time of an optical beam between two points. In one example, the device may include an optically transparent solid medium for receiving the optical beam, wherein at least a portion of the medium is generally a parallel piped shape characterized by a height, length and width, wherein the length is larger than the height; two mirrors affixed to two opposing parallel surfaces of the optically transparent solid medium, so that during operation the optical beam reflects between the two mirrors as the optical beam travels through the optically transparent medium; and an angle actuator for controllably altering the angle at which the optical beam enters into the optically transparent medium, thereby controllably altering the time that the optical beam travels through the device. This in effect permits control of the amount of delay of the transmission of light, and delays of 20 nanoseconds have been achieved.