Abstract: A manufacturing method of a POP structure including at least the following steps is provided. A first package structure is formed and a second package structure is formed on the first package structure. The first package structure includes a circuit carrier and a die disposed on the circuit carrier. Forming the first package structure includes providing a conductive interposer on the circuit carrier, encapsulating the conductive interposer by an encapsulant and removing a portion of the encapsulant and the plate of the conductive interposer. The conductive interposer includes a plate, a plurality of conductive pillars and a conductive protrusion respectively extending from the plate to the circuit carrier and the die. The conductive protrusion disposed on the die, and the conductive pillars are electrically connected to the circuit carrier. The second package structure is electrically connected to the first package structure through the conductive interposer.

Abstract: A stacked-type chip package structure includes a first chip, first terminals, a first redistribution layer, a first encapsulant, a second chip, second terminals, a second redistribution layer and through pillars. Each first chip includes a first active surface and first pads located on the first active surface. The first terminals are disposed on the first pads. The first redistribution layer is electrically connected to the first chip. The first encapsulant encapsulates the first chip and exposes top surfaces of the first terminals. The second chip is disposed over the first encapsulant. The second chip includes a second active surface and second pads located on the second active surface. The second terminals are disposed on the second pads. The second redistribution layer is electrically connected to the second chip. The through pillars electrically connect the first redistribution layer and the second redistribution layer.

Abstract: A chip package structure includes a chip, an encapsulant, a dielectric layer and a patterned circuit layer. The chip includes an active surface and a plurality of pads disposed on the active surface. The encapsulant encapsulates the chip and exposes active surface, wherein the encapsulant includes a concave surface and a back surface opposite to the concave surface, the concave surface exposes the active surface and is dented toward the back surface. The dielectric layer covers the concave surface and the active surface and includes a plurality of openings exposing the pads, wherein the opening includes a slanted side surface and the angle between the slanted side surface and the active surface is an acute angle. The patterned circuit layer is disposed on the dielectric layer and electrically connected to the pads through the openings.

Abstract: A semiconductor package structure and a manufacturing method thereof are provided. The semiconductor package structure includes a redistribution structure, at least one package structure and a second encapsulant. The redistribution structure has a first surface and a second surface opposite to the first surface. The package structure is over the first surface and includes at least one die, a first encapsulant, a redistribution layer, and a plurality of second conductive terminals. The die has a plurality of first conductive terminals thereon. The first encapsulant encapsulates the die and exposes at least part of the first conductive terminals. The redistribution layer is over the first encapsulant and is electrically connected to the first conductive terminals. The second conductive terminals are electrically connected between the redistribution layer and the redistribution structure. The second encapsulant, encapsulates the package structure and exposes at least part of the second conductive terminals.

Abstract: A chip package structure includes a semiconductor component, a plurality of conductive pillars, an encapsulant and a redistribution layer. The semiconductor component includes a plurality of pads. The conductive pillars are disposed on the pads, wherein each of the conductive pillars is a solid cylinder including a top surface and a bottom surface, and a diameter of the top surface is substantially the same as a diameter of the bottom surface. The encapsulant encapsulates the semiconductor component and the conductive pillars, wherein the encapsulant exposes the top surface of each of the conductive pillars. The redistribution layer is disposed on the encapsulant and electrically connected to the conductive pillars.

Abstract: A fan-out wafer level package structure includes a chip, a molding compound, at least one circuit layer, and at least one dielectric layer. The molding compound encapsulates the chip. The at least one circuit layer is disposed on a surface of the chip and a surface of the molding compound coplanar to the surface of the chip. The at least one circuit layer includes a plurality of traces. Each of the traces includes a first portion and a second portion. The first portion is located at an edge region of a projection of the chip onto the dielectric layer. A width of the first portion is larger than a width of the second portion. The at least one dielectric layer is disposed at a side of the at least one circuit layer.

Abstract: A fan-out chip package comprises a chip, an encapsulating layer, a first passivation layer, a redistribution wiring layer, a second passivation layer, and a plurality of vertical connectors. The encapsulation encapsulates the sides of the chip. The thickness of the encapsulation is the same as the thickness of the chip. The first passivation layer covers the active surface of the chip and the peripheral surface of the encapsulation. The redistribution layer is formed on the first passivation layer to extend the electrical connection of the chip to the peripheral surface of the encapsulation. The second passivation layer is formed on the first passivation layer. The vertical connectors are embedded in the encapsulation and the redistribution layer. The vertical connectors are only penetrate through the encapsulation protect the redistribution layer from damages.

Abstract: Disclosed is a BGA package with protective circuitry layouts to prevent cracks of the bottom circuit in the specific area of the substrate leading to package failure and to enhance packaging yield of BGA packages. A chip is disposed on the upper surface of the substrate. A chip projective area is defined inside the bottom surface of the substrate and is established by vertically projecting the edges of the chip on the upper surface to the bottom surface of the substrate. At least an external contact pad vulnerable to thermal stress is located within the chip projective area. A protective area and a wiring area are respectively defined in the chip projective area at two opposing sides of the external contact pad. A plurality of protective mini-pads are arranged in a dotted-line layout and disposed in the projective area to partially surround the external contact pad to avoid thermal stress concentrated on the protective area and to further prevent circuitry cracks in the package structure.

Abstract: A fan-out wafer level package structure includes a chip, a molding compound, at least one circuit layer, and at least one dielectric layer. The molding compound encapsulates the chip. The at least one circuit layer is disposed on a surface of the chip and a surface of the molding compound coplanar to the surface of the chip. The at least one circuit layer includes a plurality of traces. Each of the traces includes a first portion and a second portion. The first portion is located at an edge region of a projection of the chip onto the dielectric layer. A width of the first portion is larger than a width of the second portion. The at least one dielectric layer is disposed at a side of the at least one circuit layer.

Abstract: A POP structure includes a first package structure, an interposer, and a second package structure. The first package structure includes a first carrier, a first chip, conductive structures, and a first insulation encapsulation. The first carrier has a first surface and a second surface opposite to the first surface. The first chip and the conductive structures are disposed on the first surface of the first carrier. The first insulation encapsulation is formed on the first surface of the first carrier and encapsulates the conductive structures and the first chip. Top surfaces of the conductive structures are exposed through the first insulation encapsulation and are coplanar. The interposer is disposed on and electrically connected to the first package structure. The second package structure is disposed on and electrically connected to the interposer. A manufacturing method of a POP structure is also provided.

Abstract: A fan-out multi-chip package has a first redistribution layer and a plurality of chips encapsulated in an encapsulant. A dielectric layer and a second redistribution layer are formed on the encapsulant. A bottom surface of the encapsulant is formed when forming the encapsulant. The first redistribution layer has a plurality of connecting surfaces exposed on the bottom surface of the encapsulant. The dielectric layer is formed on the bottom surface of the encapsulant without covering the connecting surfaces. The second redistribution layer includes a plurality of bump pads coupled to the connecting surfaces. The fan-out circuitry is covered by the dielectric layer. Thereby, a multi-chip package is able to reduce possible damages to the active surfaces and bonding pads of the chips during packaging process.

Abstract: A manufacturing method of a package structure includes at least the following steps. At least one first die is disposed over a carrier. The first die is encapsulated using a first encapsulant. The first encapsulant exposes part of the first die. A redistribution layer (RDL) is formed over the first encapsulant. The RDL has a first surface and a second surface opposite to the first surface. The first surface faces the first encapsulant. The first encapsulant and the first die are separated from the carrier. A plurality of second dies are disposed on the second surface of the RDL. The second dies are encapsulated using the second encapsulant. A plurality of conductive terminals are formed on the first surface of the RDL.

Abstract: A manufacturing method of a package structure is provided. The method includes the following steps. A redistribution circuit layer is formed on a first carrier. A die is disposed on the redistribution circuit layer. An encapsulant is formed to encapsulate the die. The first carrier is removed to expose a surface of the redistribution circuit layer. A plurality of recesses are formed on the surface of the redistribution circuit layer. A plurality of conductive terminals are formed corresponding to the recesses on the redistribution circuit layer. Another manufacturing method of a package structure is also provided.

Abstract: A stacked chip package structure includes a first chip, pillar bumps, a first encapsulant, a first redistribution layer, a second chip, a second encapsulant, a second redistribution layer and a through via. The pillar bumps are disposed on a plurality of first pads of the first chip respectively. The first encapsulant encapsulates the first chip and exposes the pillar bumps. The first redistribution layer is disposed on the first encapsulant and electrically connects the first chip. The second chip is disposed on the first redistribution layer. The second encapsulant encapsulates the second chip. The second redistribution layer is disposed on the second encapsulant and electrically coupled to the second chip. The through via penetrates the second encapsulant and electrically connects the first redistribution layer and the second redistribution layer.

Abstract: Disclosed is a semiconductor package with Pillar-Top-Interconnection (PTI) configuration, comprising a redistribution layer (RDL) formed on a carrier plane, a plurality of metal pillars disposed on the RDL, a chip bonded onto the RDL, and a molding core. The molding core is formed on the carrier plane and has a bottom surface defined by the carrier plane so that the RDL is embedded inside the molding core. The package thickness of the molding core is greater than the chip-bonding height of the chip so that the chip is completely embedded inside the molding core. The metal pillars are encapsulated at the peripheries of the molding core with a plurality of pillar top portions exposed from the molding core. The exposed pillar top portions are reentrant from a top surface of the molding core and uneven. Accordingly, it realizes the effects of ultra-thin and smaller footprint POP stacked assembly with fine pitch vertically electrical connections in POP structure.

Abstract: A stackable semiconductor package and manufacturing method thereof are provided. The stackable semiconductor package includes carrier, first RDL, encapsulation layer, vertical interposers, second RDL, and chip. The carrier has first surface in which the first RDL and the encapsulation layer are formed thereon. The first RDL includes first pads and second pads. The encapsulation layer covers the first RDL and has outer surface. The vertical interposers are disposed in the encapsulation layer to electrically connect with the first RDL. The second RDL is formed on the outer surface to electrically connect with the vertical interposers. The carrier includes terminal holes and chip-accommodating hole. The terminal holes correspondingly expose the second pads. The chip-accommodating hole exposes the first pads. The chip is mounted on the encapsulation layer through the chip-accommodating hole to electrically connect with the first pads.

Abstract: A manufacturing method of a package structure includes at least the following steps. At least one first die is disposed over a carrier. The first die is encapsulated using a first encapsulant. The first encapsulant exposes part of the first die. A redistribution layer (RDL) is formed over the first encapsulant. The RDL has a first surface and a second surface opposite to the first surface. The first surface faces the first encapsulant. The first encapsulant and the first die are separated from the carrier. A plurality of second dies are disposed on the second surface of the RDL. The second dies are encapsulated using the second encapsulant. A plurality of conductive terminals are formed on the first surface of the RDL.

Abstract: A stacked chip package structure includes a first chip, pillar bumps, a first encapsulant, a first redistribution layer, a second chip, a second encapsulant, a second redistribution layer and a through via. The pillar bumps are disposed on a plurality of first pads of the first chip respectively. The first encapsulant encapsulates the first chip and exposes the pillar bumps. The first redistribution layer is disposed on the first encapsulant and electrically connects the first chip. The second chip is disposed on the first redistribution layer. The second encapsulant encapsulates the second chip. The second redistribution layer is disposed on the second encapsulant and electrically coupled to the second chip. The through via penetrates the second encapsulant and electrically connects the first redistribution layer and the second redistribution layer.

Abstract: A stacked chip package structure includes a first chip, stud bumps, a second chip, pillar bumps, an encapsulant and conductive vias. The first stud bumps are respectively disposed on a plurality of first pads of the first chip, wherein each first stud bump includes a rough surface, and the rough surface of each first stud bump is rougher than a top surface of each first pad. The second chip is disposed on the first chip and exposes the first pads. The pillar bumps are respectively disposed on a plurality of second pads of the second chips. The encapsulant encapsulates the first chip and the second chip and exposes a top surface of each second stud bump. The first conductive vias penetrate the encapsulant and connect the first stud bumps. Each first conductive via covers the rough surface of each first stud bump.

Abstract: A fan out type multi-chip stacked package includes a chip stacked assembly having a plurality of chips vertically stacked. The electrodes of the chips and one active surface among all active surfaces are not covered by the stacked chips. A plurality of flip-chip bumps of a dummy flip chip are coupled to the electrodes of the chips. An encapsulant encapsulates the chip stacked assembly and the flip-chip bumps. The encapsulant has a planar surface. The flip-chip bumps have a plurality of bonding surfaces exposed from and coplanar to the planar surface. A redistribution layer is disposed on the planar surface and includes a plurality of fan out circuits electrically connected the bonding surfaces of the flip-chip bumps. Thus, the package has better resistance against mold flow impact to effectively reduce the risk of wire sweeping.