Abstract: A manufacturing method of a packaging structure is provided. First, a carrier is provided. A conductive layer is formed on the carrier. A conductive frame is formed on the conductive layer. The conductive frame is in contact with and electrically connected to the conductive layer. A chip is placed on the conductive layer. The conductive frame surrounds the chip. An insulation encapsulation is formed to encapsulate the chip, and the insulation encapsulation exposes an active surface of the chip. A redistribution layer is formed on the active surface of the chip. The redistribution layer extends from the active surface to the insulation encapsulation.

Abstract: A manufacturing method of a package structure includes at least the following steps. A plurality of conductive connectors are formed on a circuit layer. The circuit layer includes a central region and a peripheral region electrically connected to the central region. A chip is disposed on the central region of the circuit layer. The chip includes an active surface at a distance from the circuit layer and a sensing area on the active surface. An encapsulant is formed on the circuit layer to encapsulate the chip and the conductive connectors. A redistribution layer is formed on the encapsulant to electrically connect the chip and the conductive connectors. The redistribution layer partially covers the chip and includes a window corresponding to the sensing area of the chip. A package structure is also provided.

Abstract: A conductive layer is formed on the first zone of a carrier. The redistribution layer is formed on the conductive layer on the first zone and the second zone of the carrier. Then an open-test and a short-test are performed to the redistribution layer. Since the conductive layer and the parts of the redistribution layer formed on the conductive layer constitute a closed loop, a load is presented if the redistribution layer is formed correctly. In addition, no load is presented if the redistribution layer is formed correctly since the parts of the redistribution layer formed on the second zone of the carrier constitute an open loop. Therefore, whether the redistribution layer is flawed or not is determined before the dies are boned on the redistribution layer. Thus, no waste of the good die is occurred because of the flawed redistribution layer.

Abstract: A testing device of high-frequency memory comprises a transfer interface, a tester and a socket group. The tester is electrically connected to the socket group via the transfer interface. The transfer interface is configured to merge a first testing signal with a second testing signal to generate a double frequency testing signal, wherein the first testing signal and the second testing signal are outputted by the tester, and through the transfer interface, the double frequency testing signal is shared and transmitted to the socket group for testing at least two memory packages disposed on the socket group.

Abstract: A first semiconductor package of a POP structure has a first body and a plurality of first solder balls. A second semiconductor package of the POP structure has a second body and a plurality of second solder balls. A stand-off mechanism is utilized to maintain a minimum gap between the first body and the second body while a reflow soldering process is performed. By performing the reflow soldering process, the first solder balls and the second solder balls are heated and engaging with one another so as to solder the first solder balls and the second solder balls to form a plurality of interposer solder balls. Each interposer solder ball has a height substantially equal to the minimum gap and a cross sectional width less than a pitch between two adjacent interposer solder balls. Thereby, the POP structure would be a fine pitch package.

Abstract: A package method includes disposing a chip and a plurality of solder bumps on a substrate by disposing a plurality of chip interfaces and the plurality of solder bumps on a plurality of first interfaces of the substrate respectively; forming a mold layer configured to encapsulate the chip and the plurality of solder bumps; grinding the mold layer to obtain a grinded mold layer and expose a top side of the chip; drilling the grinded mold layer to form a plurality of through holes corresponding to the plurality of solder bumps; and applying a conductive material to fill the plurality of through holes with the conductive material to form a plurality of electrical paths through the grinded mold layer and electrically couple to the plurality of solder bumps.

Abstract: A method of fabricating a packaging layer of an fan-out chip package comprising: disposing a chip on a temporary carrier; forming an encapsulation on the temporary carrier to encapsulate the chip; grinding the encapsulation and the chip to form a back surface of the chip and a back surface of the encapsulation; debonding the encapsulation and the chip from the temporary carrier; forming a first passivation layer on the active surface of the chip and the peripheral surface of the encapsulation; patterning the first passivation layer to form fan-in openings and fan-out openings on the first passivation layer; forming a redistribution layer on the first passivation layer; forming a second passivation layer on the first passivation layer and the redistribution wiring layer; forming vertical connectors within the encapsulation to correspondingly couple to the fan-out pads; and disposing a plurality of dummy terminals on the dummy pattern.

Abstract: A POP structure includes a circuit board, a bottom package structure, a top package structure, and a metal frame structure. The circuit board has a plurality of signal pads and dummy pads. The dummy pads surround the signal pads. The bottom package structure is disposed over the circuit board. The bottom package structure is electrically connected to the signal pads. The top package structure is disposed over the bottom package structure. The top package structure is electrically connected to the bottom package structure. The metal frame structure includes a body and a plurality of terminal pins. The body is located between the top package structure and the bottom package structure. The terminal pins extend outward from an edge of the top package structure to connect the top package structure and the dummy pads of the circuit board.

Abstract: A wafer level chip scale package (WLCSP) has a device chip, a carrier chip, an offset pad, a conductive spacing bump and a through hole via (THV). The device chip is attached to the carrier chip. The offset pad is disposed on a first surface of the device chip. The conductive spacing bump is formed on the offset pad. The through hole via includes a through hole and a hole metal layer. The through hole penetrates through the carrier chip and the device chip, and the hole metal layer is formed in the through hole and in contact with the offset pad.

Abstract: A chip package structure includes a redistribution layer, at least one chip, a reinforcing frame, an encapsulant and a plurality of solder balls. The redistribution layer includes a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the redistribution layer. The reinforcing frame is disposed on the first surface and includes at least one through cavity. The chip is disposed in the through cavity and a stiffness of the reinforcing frame is greater than a stiffness of the redistribution layer. The encapsulant encapsulates the chip, the reinforcing frame and covering the first surface. The solder balls are disposed on the second surface and electrically connected to the redistribution layer.

Abstract: A chip package structure includes a substrate, a chip, an encapsulant, a plurality of solder balls and a patterned metal layer. The substrate includes a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the substrate. The encapsulant encapsulates the chip and covering the first surface. The solder balls are disposed on the second surface and electrically connected to the substrate. The patterned metal layer s disposed on the encapsulant. The patterned metal layer includes at least one concave portion and at least one convex portion defined by the concave portion. The convex portion faces the encapsulant. The adhesion layer is disposed between the patterned metal layer and the encapsulant. The adhesion layer is filled in the concave portion.

Abstract: A manufacturing method of a POP structure including at least the following steps is provided. A first package structure is formed and a second package structure is formed on the first package structure. The first package structure includes a circuit carrier and a die disposed on the circuit carrier. Forming the first package structure includes providing a conductive interposer on the circuit carrier, encapsulating the conductive interposer by an encapsulant and removing a portion of the encapsulant and the plate of the conductive interposer. The conductive interposer includes a plate, a plurality of conductive pillars and a conductive protrusion respectively extending from the plate to the circuit carrier and the die. The conductive protrusion disposed on the die, and the conductive pillars are electrically connected to the circuit carrier. The second package structure is electrically connected to the first package structure through the conductive interposer.

Abstract: A package structure and a manufacturing method thereof are provided. The package structure includes a circuit carrier, a substrate, a die, a plurality of conductive wires and an encapsulant. The substrate is disposed on the circuit carrier and includes a plurality of openings. The die is disposed between the circuit carrier and the substrate. The conductive wires go through the openings of the substrate to electrically connect between the substrate and the circuit carrier. The encapsulant is disposed on the circuit carrier and encapsulates the die, the substrate and the conductive wires.

Abstract: A chip package structure including a substrate, a first chip, a frame, a plurality of first conductive connectors, a first encapsulant, and a package is provided. The first chip is disposed on the substrate. The first chip has an active surface and a back surface opposite to the active surface, and the active surface faces the substrate. The frame is disposed on the back surface of the first chip and the frame has a plurality of openings. The first conductive connectors are disposed on the substrate and the first conductive connectors are disposed in correspondence to the openings. The first encapsulant is disposed between the substrate and the frame and encapsulates the first chip. The package is disposed on the frame and is electrically connected to the substrate via the first conductive connectors.

Abstract: A manufacturing method of a package-on package structure including at least the following steps is provided. A die is bonded on a first circuit carrier. A spacer is disposed on the die. The spacer and the first circuit carrier are connected through a plurality of conductive wires. An encapsulant is formed to encapsulate the die, the spacer and the conductive wires. A thickness of the encapsulant is reduced until at least a portion of each of the conductive wires is removed to form a first package structure. A second package structure is stacked on the first package structure. The second package structure is electrically connected to the conductive wires.

Abstract: A stacked-type chip package structure includes a first chip, first terminals, a first redistribution layer, a first encapsulant, a second chip, second terminals, a second redistribution layer and through pillars. Each first chip includes a first active surface and first pads located on the first active surface. The first terminals are disposed on the first pads. The first redistribution layer is electrically connected to the first chip. The first encapsulant encapsulates the first chip and exposes top surfaces of the first terminals. The second chip is disposed over the first encapsulant. The second chip includes a second active surface and second pads located on the second active surface. The second terminals are disposed on the second pads. The second redistribution layer is electrically connected to the second chip. The through pillars electrically connect the first redistribution layer and the second redistribution layer.

Abstract: A chip package structure includes a semiconductor component, a plurality of conductive pillars, an encapsulant and a redistribution layer. The semiconductor component includes a plurality of pads. The conductive pillars are disposed on the pads, wherein each of the conductive pillars is a solid cylinder including a top surface and a bottom surface, and a diameter of the top surface is substantially the same as a diameter of the bottom surface. The encapsulant encapsulates the semiconductor component and the conductive pillars, wherein the encapsulant exposes the top surface of each of the conductive pillars. The redistribution layer is disposed on the encapsulant and electrically connected to the conductive pillars.

Abstract: A chip package structure includes a chip, an encapsulant, a dielectric layer and a patterned circuit layer. The chip includes an active surface and a plurality of pads disposed on the active surface. The encapsulant encapsulates the chip and exposes active surface, wherein the encapsulant includes a concave surface and a back surface opposite to the concave surface, the concave surface exposes the active surface and is dented toward the back surface. The dielectric layer covers the concave surface and the active surface and includes a plurality of openings exposing the pads, wherein the opening includes a slanted side surface and the angle between the slanted side surface and the active surface is an acute angle. The patterned circuit layer is disposed on the dielectric layer and electrically connected to the pads through the openings.

Abstract: A semiconductor package structure and a manufacturing method thereof are provided. The semiconductor package structure includes a redistribution structure, at least one package structure and a second encapsulant. The redistribution structure has a first surface and a second surface opposite to the first surface. The package structure is over the first surface and includes at least one die, a first encapsulant, a redistribution layer, and a plurality of second conductive terminals. The die has a plurality of first conductive terminals thereon. The first encapsulant encapsulates the die and exposes at least part of the first conductive terminals. The redistribution layer is over the first encapsulant and is electrically connected to the first conductive terminals. The second conductive terminals are electrically connected between the redistribution layer and the redistribution structure. The second encapsulant, encapsulates the package structure and exposes at least part of the second conductive terminals.

Abstract: A fan-out chip package comprises a chip, an encapsulating layer, a first passivation layer, a redistribution wiring layer, a second passivation layer, and a plurality of vertical connectors. The encapsulation encapsulates the sides of the chip. The thickness of the encapsulation is the same as the thickness of the chip. The first passivation layer covers the active surface of the chip and the peripheral surface of the encapsulation. The redistribution layer is formed on the first passivation layer to extend the electrical connection of the chip to the peripheral surface of the encapsulation. The second passivation layer is formed on the first passivation layer. The vertical connectors are embedded in the encapsulation and the redistribution layer. The vertical connectors are only penetrate through the encapsulation protect the redistribution layer from damages.