Abstract: A semiconductor device includes a transmission control unit which performs transmission processing, an area determination unit which determines whether an own vehicle is located in an intersection area, and an operation mode determination unit which determines either a control mode or a terminal mode as an operation mode of a radio terminal device based on an identification information for identifying a source of a received communication frame, and a determination result by the area determination unit. When the operation mode is determined to be the control mode, the transmission control unit outputs, as transmission data, a communication frame including generated control information. When the operation mode is determined to be the terminal mode, the transmission control unit outputs transmission data in synchronization with the received communication frame.

Abstract: A solid-state imaging device capable of suppressing variations in reference voltages and improving performance of reference voltages is provided. According to one embodiment, the solid-state imaging device includes a pixel outputting a luminance signal voltage corresponding to an amount of incident light, reference voltages, a reference voltage generation circuit outputting a ramp signal and an inverse ramp signal, and an AD converter, and the AD converter includes a comparator including an amplifier coupled to one input terminal, a reference voltage and an input terminal coupled to each of the ramp signals via a capacitor, and an input terminal coupled to each of the reference voltage and the ramp signal via a capacitor, and a ramp current cancel circuit coupled to each of the reference voltages via a cancel capacitor.

Abstract: To realize a low power consumption and a small area of a network communication system and a semiconductor device for mounting the same. In the processing method of the network router or network communication frame, the received frame is input to the hash generator, to obtain an address based on the resulting hash value, the position of the address in the rule table, stores the rule corresponding to the received frame.

Abstract: A semiconductor device includes a clock generating circuit and a jitter measurement circuit. The clock generating circuit is input with a control value for changing a cycle of the clock thereof. The jitter measurement circuit has a first logic circuit operated with using an output clock of the clock generating circuit as an input and a first delay element, and is configured to output the presence/absence of a jitter of the clock generating circuit.

Abstract: A semiconductor device includes a memory, a random number generation circuit, and a control circuit. The memory stores key information, and the random number generation circuit generates first and second random number signals. The control circuit generates sixth and seventh random number signals from the first random number signal and the key information, generates encrypted update data from update data using the seventh random number signal, transmits the first and second random number signals as request signals to an external terminal device, receives, from the external device, first and second response signals as response signals in response to the request signals, generates an eighth random number signal using the first response signal, the second and the sixth random number signals as input signals, and provides the encrypted update data for the external terminal device when the second response signal coincides with the eighth random number signal.

Abstract: An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Abstract: An electronic device comprises a switching regulator. Here, the switching regulator has a first wiring portion (including a parasitic inductance) coupling the high-side element and the low-side element, and a second wiring portion (including a parasitic inductance) coupled with the low-side element. Also, the switching regulator has a first region in where the first wiring portion and the second wiring portion are lined up with each other. As a result, the performance of the electronic device can be improved.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 ?m.

Abstract: A semiconductor device has a timer unit and a processing unit. The timer unit includes a binary counter, a first converter that converts a first count value output from the binary counter to a gray code to output as first gray code data. The processing unit includes a first synchronizer that captures the first gray code data transferred from the timer unit in synchronization with the system clock signal and outputs the captured first gray code data as second gray code data, and a fault detection unit that generates a data for fault detection based on the first gray code data transferred from the timer unit and compares a second count value based on the second gray code data with a third counter value based on the data for fault detection.

Abstract: A semiconductor device includes: a sensor detecting electric capacitance of a touch key group comprising a plurality of touch keys arranged in a matrix; and a control device configured to perform character recognition based on a change in the electric capacitance of the plurality of touch keys detected by the sensor and on a sampling pattern that is time-series data of a loci.

Abstract: A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.

Abstract: A data processor capable of suppressing variation in latency during a bus access is provided. The data processor according to one embodiment includes a ring bus through which a plurality of relay circuits, being coupled to a plurality of bus masters and a plurality of slaves, are coupled in the shape of a ring. Each of the relay circuits includes: an arbitration circuit which arbitrates an adjacent request packet of an adjacent relay circuit and a bus request packet of a nearest bus master with use of priority of these request packets, and outputs the request packet after arbitration to a next relay circuit; and a priority adjustment circuit which adjusts priority of the bus request packet according to the number of relay circuits through which the bus request packet passes before reaching its destination.

Abstract: Example implementations include a system of secure decryption by virtualization and translation of physical encryption keys, the system having a key translation memory operable to store at least one physical mapping address corresponding to at least one virtual key address, a physical key memory operable to store at least one physical encryption key at a physical memory address thereof; and a key security engine operable generate at least one key address translation index, obtain, from the key translation memory, the physical mapping address based on the key address translation index and the virtual key address, and retrieve, from the physical key memory, the physical encryption key stored at the physical memory address.

Abstract: A semiconductor device 1 includes: a first oscillator 11_RC1 configured to operate at a detected voltage, the first oscillator having first temperature dependency; a second oscillator 11_RC4 configured to operate at the detected voltage, the second oscillator having second temperature dependency; a count unit configured to count an output of the first oscillator and an output of the second oscillator, the output of the first oscillator and the output of the second oscillator being supplied to the count unit; an arithmetic unit configured to calculate a count value CNT (T1) of the first oscillator and a count value CNT (T4) of the second oscillator, the count values of the first and second oscillators being counted by the count unit; and a determining unit configured to compare an output of the arithmetic unit with a threshold value to output a detected result signal corresponding to a result of the comparison.

Abstract: To improve an on-resistance of a semiconductor device. A plurality of collector regions are formed at a predetermined interval on a bottom surface of a drift layer made of SiC. Next, on the bottom surface of the drift layer, both of the drift layer and a collector region via a silicide layer are connected to a collector electrode.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.

Abstract: A system for and a method of generating an ordered list of instructions comprising a list of pixel coordinates which are vertices of triangles in a strip of a reference input image in a source coordinate system such that transformation of the vertices to a corresponding output image in a destination coordinate system causes the triangles to be mapped to a block of image data which maps to a block of line memory (or “texture cache”). The method comprises dividing the reference output image into a plurality of tiled sections in the destination coordinate system. The method comprises, for each section, defining first and second boundaries of an array of strips of pixels in the section by dividing the section into blocks of line memory.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface, a gate electrode formed on the main surface of the semiconductor substrate, a side-wall oxide film formed on a side wall of the gate electrode, a first insulating layer formed on the gate electrode and containing silicon nitride, and a second insulating layer formed between the gate electrode and the first insulating layer and containing silicon oxide.

Abstract: To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.

Abstract: A semiconductor device includes an external terminal, an input buffer having an input terminal connected to the external terminal, a voltage generating circuit configured to generate a test voltage supplied to the input terminal, and a control circuit configured to determine whether the input buffer is deteriorated based on the test voltage supplied to the input terminal and an output level of the input buffer responding to the test voltage.