Abstract: Two resistances having different temperature coefficients are connected in series between a plurality of output transistors which are provided in parallel, and the power supply. A difference between these resistance values of the two resistances changes according to a temperature change. The change of the difference in the resistance value is detected as a change of voltage and a control signal is generated. According to the control signal, a protection transistor operates to connect an input node, and an output node or the both of the input node and the output node to the ground. As a result, in case of the extraordinary generation, the current to be supplied to a rear stage is restrained.

Abstract: An error is prevented from being generated at a mounting position of an electronic component on a wiring substrate. A first semiconductor chip has a main surface and a rear surface. The rear surface is an opposite surface of the main surface. The rear surface of the first semiconductor chip is an opposite surface of the main surface thereof. A wiring substrate is rectangular, and has a main surface and a rear surface. The first semiconductor chip is mounted on the main surface of the wiring substrate. A lid covers the main surface of the wiring substrate, and the first semiconductor chip. An electronic component is mounted on the rear surface of the wiring substrate. The main surface of the wiring substrate has uncovered regions that are not covered with the lid at at least two corners facing each other.

Abstract: A data processor of an embodiment includes a memory, an instruction cache, a processing unit (CPU), and a fetch process control unit. The memory stores a program in which a plurality of instructions are written. The instruction cache operates only when a branch instruction included in the program is executed, and data of a greater capacity than a width of a bus of the memory is read from the memory and stored in the instruction cache in advance. The processing unit accesses both the memory and the instruction cache and executes, in a pipelined manner, instructions read from the memory or the instruction cache. The fetch process control unit generates, in response to a branch instruction executed by the processing unit, a stop signal for stopping a fetch process of reading an instruction from the memory, and outputs the stop signal to the memory.

Abstract: Disclosed is a semiconductor device that includes an N-channel MOS transistor and a control voltage generation circuit. The N-channel MOS transistor controls the supply of a power supply voltage obtained by stepping down a DC voltage. The control voltage generation circuit clips the gate voltage of the N-channel MOS transistor at a control voltage not higher than a predetermined voltage in accordance with the DC voltage.

Abstract: To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor. An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.

Abstract: To provide a semiconductor device capable of accurately controlling the cycle of an internal clock signal. This semiconductor device, by using signal that is output from a sequence register of an asynchronous successive approximation type ADC when N times of comparison are completed, detects whether or not the signal and its delay signal are output when the period transitions from a comparison period to a sampling period, and generates, on the basis of the detection result, a delay control signal for controlling the cycle of an internal clock signal by controlling the delay times of the delay circuits.

Abstract: Disclosed is a radio communication system capable of reducing the cost for introducing a system utilizing RFID technology into a radio network environment. A radio communication system pertaining to the present invention includes a first radio equipment that transmits first data using a first radio wave; a data transmitter that outputs a second radio wave generated by modulating the first radio wave depending on second data which is an object for transmission; and a second radio equipment that receives the first and second radio waves and includes a separation and demodulation circuit that separates and demodulates the first data transmitted from the first radio equipment and the second data transmitted from the data transmitter included in the received radio waves. The data transmitter includes an amplifier for generating the second radio wave by amplifying the first radio wave.

Abstract: In a semiconductor device, a first semiconductor chip includes a first circuit and a first inductor, and a second semiconductor chip includes a second circuit and chip-side connecting terminals. An interconnect substrate is placed over the first semiconductor chip and the second semiconductor chip. The interconnect substrate includes a second inductor and substrate-side connecting terminals. The second inductor is located above the first inductor. The chip-side connecting terminals and the two substrate-side connecting terminals are connected through first solder balls.

Abstract: An interface circuit provided in a semiconductor device supplies an operation clock to an external memory device based on a clock signal and receives a data signal and a strobe signal from the external memory device. The interface circuit includes a delay circuit delaying the received strobe signal. The delay circuit includes a first adjustment circuit and a second adjustment circuit connected in series with the first adjustment circuit. The first adjustment circuit is capable of adjusting a delay amount of the strobe signal in a plurality of steps in accordance with the set frequency of the clock signal. The second adjustment circuit is capable of adjusting the delay amount of the strobe signal with a higher precision than the first adjustment circuit.

Abstract: An output MOS transistor has a drain connected with a power supply and a source connected with an output terminal. The short-circuit MOS transistor has a source connected with the output terminal. The short-circuit MOS transistor is formed in a semiconductor substrate connected with the power supply. A switching device is formed in a semiconductor region which is formed in the semiconductor substrate, and contains a first diffusion layer connected with the gate of the output MOS transistor and a second diffusion layer formed in the semiconductor region and connected with the drain of the short-circuit MOS transistor.

Abstract: In an aspect of the present invention, an ESD (Electrostatic Discharge) protection element includes a bipolar transistor comprising a collector diffusion layer connected with a first terminal and an emitter diffusion layer; and current control resistances provided for a plurality of current paths from a second terminal to the collector diffusion layer through the emitter diffusion layer, respectively. The bipolar transistor further includes a base diffusion region connected with the second terminal through a first resistance which is different from the current control resistances.

Abstract: There is a need to highly integrate a circuit area of content addressable memory (CAM) and ensure faster operation thereof. A priority encoder and row decoder portion shares a row address register including more than one row. Each row of the row address register corresponds to each entry of a TCAM array mat and retains each address. Each row of the row address register corresponds to each word line and match line of the TCAM array mat. Writing data to the TCAM array mat activates word line for a row retained in the row address register corresponding to a specified address. Searching for the TCAM array mat activates a match line for the TCAM array mat. The row address register for the corresponding row stores the address of an entry for the TCAM array mat matching search data.

Abstract: A semiconductor device containing a terminal, a power supply voltage dropping circuit that generates a constant voltage, a switch circuit to periodically apply a constant voltage to a terminal in response to a first clock, a current-controlled oscillator circuit, and a counter, and in which the power supply voltage dropping circuit supplies a first current to the switch circuit, the current-controlled oscillator circuit generates a second clock whose frequency changes in response to the value of the first current, and the counter counts the number of second clocks within the counting time.

Abstract: Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.

Abstract: The present invention provides a non-contact charging system which can transmit the information on the reception state from an electric power receiving device to an electric power transmitting device while performing the electric power reception. The non-contact charging system is configured with an electric power transmitting device which performs electric power transmission at a resonance frequency and an electric power receiving device which performs electric power reception at the resonance frequency. The electric power receiving device includes an adjustment unit which can adjust the resonance frequency; and a receiving-side control unit for adjusting the resonance frequency when a prescribed condition is satisfied.

Abstract: A high frequency signal can be transmitted and received in a semiconductor device. In a QFP, an antenna (frame body) is supported by three suspension leads. The antenna is arranged to be symmetrical with respect to a first virtual diagonal line of a plan view of a sealing body. One of the three suspension leads is arranged on the first virtual diagonal line. With this configuration, discontinuities of a wave of a signal in the antenna can be reduced, as a result of which the high frequency signal of 5 Gbps class can be transmitted and received in the QFP.

Abstract: The present disclosure relates to a method for reducing second order intermodulation distortion in a harmonic rejection mixer arranged for down-converting a radio frequency signal to an in-phase and a quadrature baseband signal. The method includes adjusting an output current of a first mixer, to reduce the second order intermodulation distortion in the quadrature baseband signal to a first value, and adjusting an output current of a second mixer, to reduce the second order intermodulation distortion in the in-phase baseband signal to a second value.

Abstract: In order to secure the performance of a SiC-based JFET having an impurity diffusion rate lower than silicon-based one, a gate depth is secured while precisely controlling a distance between gate regions, instead of forming gate regions by ion implantation into the side wall of a trench. This means that a channel region defined by a gate distance and a gate depth should have a high aspect ratio. Further, due to limitations of process, a gate region is formed within a source region. Formation of a highly doped PN junction between source and gate regions causes various problems such as inevitable increase in junction current. In addition, a markedly high energy ion implantation becomes necessary for the formation of a termination structure. In the invention, provided is a vertical channel type SiC power JFET having a floating gate region below and separated from a source region and between gate regions.

Abstract: A signal processing circuit includes a chopper amplifier that has a differential amplifier circuit that amplifies differential input signals Vsp(t) and Vsm(t), and an adder circuit that generates an addition signal Vfil(t) by addition of the chopper output signal Vsub(t) that the chopper amplifier generates. Differential signals inputted into the differential amplifier circuit are interchanged for every first phase period and second phase period, and the adder circuit generates the addition signal by addition of the chopper output signal in the first phase period and in the second phase period.

Abstract: To compensate for non-linearity of an AD conversion unit and non-linearity of a DA conversion unit in an electronic system including the DA conversion unit and the AD conversion unit, an electronic system includes an A/D conversion unit, a D/A conversion unit, an AD conversion compensation unit, a DA conversion compensation unit, and a calibration unit. During a calibration operation period, the calibration unit sets an operating characteristic of the AD conversion compensation unit and an operating characteristic of the DA conversion compensation unit. The operating characteristic of the AD conversion compensation unit set during the calibration operation period compensates for non-linearity of AD conversion of the A/D conversion unit. The operating characteristic of the DA conversion compensation unit set during the calibration operation period compensates for non-linearity of DA conversion of the D/A conversion unit.