Abstract: A semiconductor device permitting the reduction of cost is disclosed. In a semiconductor package wherein electrode pads of a semiconductor chip and corresponding inner leads are electrically coupled with each other through a plurality of bonding wires, sensing wires (second and fourth bonding wires) are made thinner than other bonding wires (first and third bonding wires) coupled to inner leads same as those with the sensing wires coupled thereto, thereby reducing the cost of gold wires to attain the reduction in cost of the semiconductor package.

Abstract: The present invention provides a small-sized inexpensive solid-state imaging apparatus. A D/A converter included in a successive comparison type A/D converter of the solid-state imaging apparatus includes a multiplexer which selects any of reference voltages VR0 to VR16 and sets it as an analog reference signal when coarse A/D conversion is performed, and which selects reference voltages VR (n?1) to VR (n+2) of the reference voltages VR0 to VR16 when fine A/C conversion is performed, and a capacitor array which generates an analog reference signal, based on the reference voltages VR (n?1) to VR (n+2) when the fine A/D conversion is performed. It is thus possible to reduce settling errors in reference voltage without using redundant capacitors.

Abstract: A semiconductor device prevents recognition failure in mutual recognition between a host and a device compliant with USB Specifications. The semiconductor device includes: an interterminal opening/closing section having a plurality of first conductivity type MOS transistors, the respective sources or drains of which are cascaded, in which the source or drain of a first-stage MOS transistor among the cascaded MOS transistors is used as a first terminal, the source or drain of a final-stage MOS transistor among the cascaded MOS transistors is used as a second terminal, and the respective gates of the cascaded MOS transistors receive a control signal for controlling the opening or short-circuiting between the first and second terminals; and a current bypass section that reduces a current flowing into either one connection node coupling the respective sources or drains of the cascaded MOS transistors.

Abstract: A pMIS region is provided between a boundary extending in a first direction and passing through each of a plurality of standard cells and a first peripheral edge. An nMIS region is provided between the boundary and a second peripheral edge. A power supply wiring and a grounding wiring extend along the first and second peripheral edges, respectively. A plurality of pMIS wirings and a plurality of nMIS wirings are arranged on a plurality of first virtual lines and a plurality of second virtual lines, respectively, extending in the first direction and arranged with a single pitch in a second direction. The first virtual line that is the closest to the boundary and the second virtual line that is the closest to the boundary have therebetween a spacing larger than the single pitch.

Abstract: A semiconductor device includes a substrate, a multilayer wiring layer formed over the substrate, an MTJ (Magnetic Tunnel Junction) element formed in an insulating layer located lower than an uppermost wiring layer in the multilayer wiring layer, a wiring formed in a wiring layer immediately above the MTJ element and coupled to the MTJ element, and a shield conductor region provided in the wiring or a wiring layer immediately above the wiring, and covering an entirety of the MTJ element in a plan view.

Abstract: A semiconductor substrate includes a semiconductor chip and an interconnect substrate. The interconnect substrate has an interconnect region between a first main surface formed with plural orderly arranged first and second signal electrodes connected to the semiconductor chip, and a second main surface. The interconnect region has a core substrate, interconnect layers formed on both surfaces thereof, plural first through holes and plural first vias that pass through the interconnect layer on the side of the first main surface for forming impedance matching capacitances. Each first through hole is connected to a first signal interconnect at a position spaced part from the first signal electrode by a first interconnect length and each first via is connected to the second signal interconnect at a position spaced apart from the second signal electrode by a second interconnect length that is substantially equal with the first interconnect length.

Abstract: The deposition rate of a porous insulation film is increased, and the film strength of the porous insulation film is improved. Two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, are vaporized, and transported with a carrier gas to a reactor (chamber), and an oxidant gas including an oxygen atom is added thereto. Thus, a porous insulation film is formed by a plasma CVD (Chemical Vapor Deposition) method or a plasma polymerization method in the reactor (chamber). In the step, the ratio of the flow rate of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less.

Abstract: A semiconductor device includes a logic circuit and an active element circuit. The logic circuit is provided with semiconductor elements formed in a semiconductor substrate. The active element circuit is provided with transistors formed using semiconductor layers formed over a diffusion insulating film formed above a semiconductor substrate. The active element circuit is controlled by the logic circuit.

Abstract: A semiconductor device includes a one-segment tuner I/F that is connected to a one-segment tuner, a tuner I/F that is connected to a digital terrestrial tuner, a decoder that selectively decodes a first broadcast signal supplied from the one-segment tuner I/F and a second broadcast signal supplied from the tuner I/F, a general purpose processor that is provided separately from the decoder and decodes the first broadcast signal, and a switch unit that, based on signal intensity of the second broadcast wave, switches the decoding by the decoder between the first broadcast signal and the second broadcast signal while the general purpose processor is decoding the first broadcast signal. The one-segment tuner I/F, the tuner I/F, the decoder, the general purpose processor, and the switch unit are integrated on one chip.

Abstract: To provide a technique adopting a TSV technique, capable of improving manufacturing yield and reliability of semiconductor devices. By partitioning a connection pad-forming region into a plurality of regions and by forming, respectively, connection pads 17 having a relatively small planar area, spaced apart from an adjacent connection pad 17 in each of partitioned regions, dishing generated in the connection pad 17 is lightened. In addition, by not forming a through hole 23 for forming a through electrode 27 in an interlayer insulating film 9 covering a semiconductor element, intrusion of H2O, a metal ion such as Na+ or K+, etc. into an element-forming region from the through hole, via the interlayer insulating film is prevented.

Abstract: In a nonvolatile memory device (4) provided in a semiconductor device, when data is erased based on a band-to-band tunneling scheme, supply of a boosted voltage to a memory cell (MC) to be erased is ended when a condition that an output voltage (VUCP) of a charge pump circuit (52) has recovered to a predetermined reference voltage is satisfied and additionally a condition that a predetermined reference time has elapsed since start of supply of the boosted voltage (VUCP) to the memory cell (MC) to be erased is satisfied.

Abstract: First, a product to be inspected is prepared. The product to be inspected includes a substrate and a first film formed on the substrate. TDS is performed while the temperature of the product to be inspected is raised to 1,000° C. or higher, and the quality of the product to be inspected is determined by checking for the presence or absence of a peak at 1,000° C. or higher. Meanwhile, the substrate is, for example, a semiconductor substrate such as a silicon substrate. In addition, the rate of temperature rise is, for example, equal to or higher than 40° C./min and equal to or lower than 80° C./min. The upper limit of the temperature of TDS is, for example, 1,300° C.

Abstract: Provided is a solid-state image sensing device that performs an A/D conversion operation at high speed. A sample-and-hold section 12 included in an A/D converter in a CMOS image sensor includes switches S1a and S1b and capacitor C1 that sample and hold a dark signal during each cycle period, switches S2a and S2b and capacitor C2 that sample and hold a bright signal during an odd-numbered cycle period, and switches S3a and S3b and capacitor C3 that sample and hold a bright signal during an even-numbered cycle period. While a bright signal is held with switch S2b placed in a conducting state, the next bright signal can be sampled by placing switch S3a in a conducting state.

Abstract: A plurality of first wiring layers are arranged on a main surface of a substrate, a first insulating film is arranged on upper faces of the plurality of first wiring layers, a second insulating film is arranged on an upper face of the first insulating film, and a plurality of second wiring layers are arranged on the second insulating film. A metal resistive element layer is arranged just below at least one second wiring layer among the plurality of second wiring layers. A plurality of conductive layers extend from the plurality of second wiring layers respectively to the metal resistive element layer in a Z direction perpendicular to the main surface. The metal resistive element layer includes a metal wiring layer. At least one part of a side face of at least one conductive layer among the plurality of conductive layers is connected to the metal wiring layer.

Abstract: In a semiconductor device, a lightly doped second semiconductor layer of a first conductive type is joined with a heavily doped first semiconductor layer of the first conductive type. A power transistor having a first conductive type channel and a transistor are formed in surface regions of the second semiconductor layer, respectively. A first diffusion layer of a second conductive type is formed in a surface region of the second semiconductor layer to provide a boundary between the power transistor and the transistor. The first semiconductor layer functions as a drain of the power transistor. The first diffusion layer region is set to the same voltage as that of the drain.

Abstract: There is provided a data storage flash memory management method that does not require a management area and can reduce an access load. A data storage flash memory management method for storing k time-varying parameters (k is a positive integer) in a flash memory including j blocks (j is an even number not less than 2) as erase units is configured as follows. The j blocks are divided into two areas which are a primary macroblock and a secondary macroblock, each including j/2 blocks. Each of the primary macroblock and the secondary macroblock is divided into k or more segments each having an equal memory capacity, with one of the macroblocks as an active system and the other as a standby system. The k parameters are one-to-one associated with k segments of the k or more segments, and each parameter is written or read to/from a corresponding segment in an active-system macroblock.

Abstract: To suppress detection accuracy of a measurement resistance from decreasing by an on-resistance of a selector switch. The selector switch is provided between a first node coupled to a first voltage through a reference resistance and multiple second nodes coupled to the second voltage through measurement resistances, and selects the second node to be coupled to the first node with the selector switch. A correction circuit generates a voltage obtained by adding the second voltage to a voltage between the second node and the first node as a correction voltage. A double integral ADC finds a first integral time elapsed when a difference voltage of the correction voltage to a voltage of the first node is integrated to the first voltage and a second integral time elapsed when the difference voltage of the first voltage to the voltage of the first node is integrated to the correction voltage.

Abstract: A semiconductor device in which short circuit capability can be improved while decline in overall current capability is suppressed. In the semiconductor device, a plurality of IGBTs (insulated gate bipolar transistors) arranged in a row in one direction over the main surface of a semiconductor substrate include an IGBT located at an extreme end in the one direction and an IGBT located more centrally than the IGBT located at the extreme end. The current capability of the IGBT located at the extreme end is higher than the current capability of the IGBT located centrally.

Abstract: In a semiconductor device, a transmitting circuit generates a delayed data signal and a first delayed retransmission request signal by delaying a data signal and a first retransmission request signal, respectively, and outputs a pulse signal at an edge of the delayed data signal and the first delayed retransmission request signal and prohibits output of the pulse signal at an edge of the first delayed retransmission request signal during a specified period across an edge of the delayed data signal.

Abstract: A semiconductor device has a chip mounting part, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip is mounted over the chip mounting part in a direction in which its first principal plane faces the chip mounting part. A part of the second semiconductor chip is mounted over the chip mounting part in a direction in which its third principal plane faces the first semiconductor chip. The element mounting part has a notch part. A part of the second semiconductor chip overlaps the notch part. In a region of the third principal plane of the second semiconductor chip that overlaps the notch part, a second electrode pad is provided.