Patents Assigned to RENESAS
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
    Publication number: 20130256906
    Abstract: A semiconductor device includes a substrate including a circuit region where a circuit element is formed, a multilayer wiring layer that is formed on the substrate and composed of a plurality of wiring layers and a plurality of via layers that are laminated, and an electrode pad that is formed on the multilayer wiring layer. An interlayer insulating film is formed in a region of a first wiring layer that is a top layer of the plurality of wiring layers, in the region the electrode pad and the first circuit region overlapping each other in a planar view of the electrode pad.
    Type: Application
    Filed: February 15, 2013
    Publication date: October 3, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Ryo Mori, Kazuki Fukuoka, Naozumi Morino, Yoshinori Deguchi
  • SEMICONDUCTOR DEVICE FOR BATTERY CONTROL AND BATTERY PACK
    Publication number: 20130257380
    Abstract: A semiconductor device for battery control is provided with a control circuit capable of controlling turning on/off of a charging transistor provided in a charging path of a battery, a CPU capable of controlling charging of the battery via the control circuit, and a deep discharge detection circuit capable of detecting a deeply discharged state of the battery. The semiconductor device is also provided with a switch circuit which, when a deeply discharged state of the battery is detected by the deep discharge detection circuit, preferentially sends the detection result to the control circuit and, thereby, forcibly turns off the charging transistor regardless of charging control by the CPU. When a deeply discharged state of the battery is detected, the charging path of the battery is shut off to prohibit subsequent charging regardless of charging control by the CPU.
    Type: Application
    Filed: March 2, 2013
    Publication date: October 3, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Daisuke Kato, Ryosei Makino, Ryosuke Enomoto
  • Data Processing
    Publication number: 20130251011
    Abstract: Measures for use in processing data in a user equipment radio receiver, the radio receiver comprising a modem adapted for wireless communication with a telecommunications network. Data associated with wireless communication conducted via the modem is received, the received data being defined in a first domain. The received data is transformed from the first domain into a second domain using a transform function to generate transformed data in the second domain. The transformed data is compressed in the second domain to produce compressed data in the second domain. The compressed data is stored in memory in the user equipment radio receiver.
    Type: Application
    Filed: November 14, 2012
    Publication date: September 26, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Mika Eljas VENTOLA, Janne Ari Olavi AULA
  • METHOD AND APPARATUS FOR DISTRIBUTED COMMUNICATIONS
    Publication number: 20130250778
    Abstract: A method, apparatus and computer program product are therefore provided according to an example embodiment to distributed communications. In this regard, a method includes causing an actual channel and a shadow channel to be configured to carry information for a logical channel. In some example embodiments, the logical channel is configured for at least one QCI class. The method of this embodiment may also include configuring an actual channel on a secondary link and a shadow channel on a primary link. The method of this embodiment may also include causing the shadow channel and the actual channel to be swapped such that the actual channel is configured on the primary link and the shadow channel is configured on the secondary link in an instance in which it is determined that the secondary link is no longer available.
    Type: Application
    Filed: March 27, 2012
    Publication date: September 26, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Gilles Charbit, Matti Kullervo Jokimies
  • Interference Control
    Publication number: 20130250871
    Abstract: Mechanisms for controlling communications conducted in multiple frequency bands so as to decrease an interference level between the communications. When an interference situation caused between an UL communication performed on at least one frequency band and a DL communication performed on another frequency band is determined, a partial denial processing is conducted so as to deactivate a dedicated part of resource blocks used for the first communication on the at least one frequency band of the first communication in the case of an interference situation being determined. The first communication is then continued in parallel to the second communication, on the basis of resources different from the dedicated part of resource blocks deactivated in the partial denial processing.
    Type: Application
    Filed: November 21, 2012
    Publication date: September 26, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Jouni Kristian KAUKOVUORI, Antti Oskari IMMONEN, Jukka Tapio RANTA
  • METHOD AND APPARATUS FOR DYNAMIC VEHICULAR COMMUNICATIONS
    Publication number: 20130252613
    Abstract: A method, apparatus and computer program product are therefore provided according to an example embodiment to provide a cellular based ITS environment. In this regard, a method includes causing a secondary cell carrier (SCC) to be configured for a mobile terminal located in a vehicular target area. The method of this embodiment may also include causing the SCC to be activated by signaling a vehicular fast activation block (VFAB). The method of this embodiment may also include causing the SCC to deactivate based on a signal strength measurement, received from a road side unit (RSU), in an instance in which the signal strength measurement does not satisfy a predetermined threshold over a measurement period based on a timer.
    Type: Application
    Filed: March 27, 2012
    Publication date: September 26, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Gilles Charbit, Matti Kullervo Jokimies
  • METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    Publication number: 20130252416
    Abstract: The TSV technology has been popular as one of stacking technologies of a plurality of semiconductor chips. It has however been revealed by the present inventors that when TSV is formed using a so-called first via process, via middle process, front-via via last process, or the like, there is a possibility of defects such as gate breakdown occurring due to electrostatic breakdown in the subsequent process. In order to overcome the above problem, the present invention provides a method of manufacturing a semiconductor integrated circuit device, in which a through via electrode is formed by forming a hole in a semiconductor substrate, forming an insulating member in the hole, and burying a conductive member in the resulting hole while covering a portion of the hole except for the bottom portion with the insulating member.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 26, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Yasuhiro TAKEDA, Takao KUMIHASHI, Hiroshi YANAGITA, Takashi TAKEUCHI, Yasushi MATSUDA
  • SEMICONDUCTOR DEVICE INCLUDING INTERNAL VOLTAGE GENERATION CIRCUIT
    Publication number: 20130249624
    Abstract: A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.
    Type: Application
    Filed: May 22, 2013
    Publication date: September 26, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Mihoko AKIYAMA, Futoshi IGAUE, Kenji YOSHINAGA, Masashi MATSUMURA, Fukashi MORISHITA
  • SEMICONDUCTOR INTEGRATED CIRCUIT
    Publication number: 20130249609
    Abstract: An SSCG generating a center-spread modulated clock centering on a frequency obtained by multiplying an input reference clock frequency by a predetermined number is configured to include a phase comparator, a VCO, and a modulation circuit formed by a frequency divider and a division ratio modulation circuit. The division ratio modulation circuit supplies the frequency divider with a division ratio modulated above and below the predetermined multiplication number, and outputs a magnitude relationship involved as a spread direction identification signal. The diagnostic circuit includes a counter that counts the modulated clock and, based on the spread direction identification signal, performs counting operations during an up-spread or down-spread period. Based on the values counted for a predetermined period, the operating status of the SSCG is diagnosed for the presence or absence of a failure, for example.
    Type: Application
    Filed: March 2, 2013
    Publication date: September 26, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventor: Yoshitaka Taki
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20130253690
    Abstract: Provided is a method of manufacturing a semiconductor device which allows an operation of the semiconductor device to be stabilized without increasing the area occupied thereby. The control gate electrode of a memory cell transistor is formed, and then the memory gate electrode thereof is formed on a lateral side of the control gate electrode. Then, memory offset spacers are formed over the side walls of the memory gate electrode. Then, the memory source region of the memory cell transistor is formed by ion implantation using the memory gate electrode, the memory offset spacers, and the like as a mask. Then, the memory drain region of the memory cell transistor is formed by ion implantation. Then, in the memory cell transistor, sidewall insulating films are formed. The memory offset spacers disappear through cleaning or the like before the sidewall insulating films are formed.
    Type: Application
    Filed: March 21, 2013
    Publication date: September 26, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventor: Tatsuya FUKUMURA
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130249084
    Abstract: A semiconductor device includes an interlayer insulating film containing Si, O, C, and H, an under-bump metal film disposed over the interlayer insulating film and containing Ni, and a bump electrode disposed over the under-bump metal film. In the interlayer insulating film, a ratio of a peak height of Si—CH3 near a wave number 1270 cm?1 to a peak height of Si—O near a wave number 1030 cm?1 obtained by Fourier-transform infrared spectroscopy (FTIR) is 0.15 or greater and 0.27 or less. A ratio of a peak height of Si—CH2—Si near a wave number 1360 cm?1 to the peak height of Si—CH3 near the wave number 1270 cm?1 is 0.031 or greater.
    Type: Application
    Filed: February 14, 2013
    Publication date: September 26, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Tatsuya Usami, Tomoyuki Nakamura, Naoki Fujimoto
  • SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD THEREOF, MASK FOR SEMICONDUCTOR MANUFACTURE, AND OPTICAL PROXIMITY CORRECTION METHOD
    Publication number: 20130249597
    Abstract: An object of the present invention is to reduce processing time and manufacturing cost for a semiconductor device including a logic circuit. To accomplish the above object, an area (114) for forming a logic circuit includes a first area (114b, 170) which is subjected to optical proximity correction with predetermined accuracy, and a second area (114a, 180) which is subjected to optical proximity correction with accuracy lower than said predetermined accuracy. Especially, the first area (114b, 170) includes a gate interconnection line (172) which acts as a transistor, and the second area (114a, 180) includes a dummy layout pattern (182) which does not act as a transistor.
    Type: Application
    Filed: May 6, 2013
    Publication date: September 26, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Hironobu TAOKA, Yusaku ONO
  • Interference Control
    Publication number: 20130250870
    Abstract: Mechanisms for controlling communications conducted in multiple frequency bands so as to decrease an interference level between the communications. When an interference situation caused between an UL communication performed on at least one frequency band and a DL communication performed on another frequency band is determined, a partial denial processing is conducted so as to deactivate a dedicated part of resource blocks used for the first communication on the at least one frequency band of the first communication in the case of an interference situation being determined. The first communication is then continued in parallel to the second communication, on the basis of resources different from the dedicated part of resource blocks deactivated in the partial denial processing.
    Type: Application
    Filed: November 21, 2012
    Publication date: September 26, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Jouni Kristian KAUKOVUORI, Antti Oskari IMMONEN, Jukka Tapio RANTA
  • Signalling Method and Apparatus
    Publication number: 20130252603
    Abstract: There is described a signalling system for a wireless communication network, in which wireless network there are one or more performance categories of different Radio Frequency (RF) front end sections, wherein each category has a performance capability associated therewith. The system includes: retrieving from memory at the user device information indicative of the category, or its associated performance capability, appropriate for the RF front end section of the user device; and transmitting a signalling message to a network entity, the signalling message including the information. The network entity may manage the user device based on the information.
    Type: Application
    Filed: March 21, 2013
    Publication date: September 26, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Antti Oskari IMMONEN, Jouni Kristian KAUKOVUORI, Christopher Peter CALLENDER
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130240977
    Abstract: A semiconductor device with a nonvolatile memory is provided which has improved electric performance. A memory gate electrode is formed over a semiconductor substrate via an insulating film. The insulating film is an insulating film having a charge storage portion therein, and includes a first silicon oxide film, a silicon nitride film over the first silicon oxide film, and a second silicon oxide film over the silicon nitride film. Metal elements exist between the silicon nitride film and the second silicon oxide film, or in the silicon nitride film at a surface density of 1×1013 to 2×1014 atoms/cm2.
    Type: Application
    Filed: March 2, 2013
    Publication date: September 19, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Tatsunori Kaneoka, Takaaki Kawahara
  • SOLID-STATE IMAGE PICKUP DEVICE
    Publication number: 20130241017
    Abstract: A solid-state image pickup device 1 is back surface incident type and includes a semiconductor substrate 10, a semiconductor layer 20 and a light receiving unit 30. The solid-state image pickup device 1 photoelectrically converts light incident on the back surface S2 of the semiconductor substrate 10 into signal electrical charges to image an object. The semiconductor substrate 10 has a resistivity ?1. A semiconductor layer 20 is provided on the surface S1 of the semiconductor substrate 10. The semiconductor layer 20 has a resistivity ?2. Where, ?2>?1. A light receiving unit 30 is formed in the semiconductor layer 20. The light receiving unit 30 receives signal charges produced by the photoelectric conversion.
    Type: Application
    Filed: May 3, 2013
    Publication date: September 19, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventor: Yasutaka NAKASHIBA
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20130240991
    Abstract: A device and a method for manufacturing the same in which with device includes a single crystal semiconductor substrate and an SOI substrate separated from the single crystal semiconductor substrate by a thin buried insulating film and having a thin single crystal semiconductor thin film (SOI layer), in which well diffusion layer regions, drain regions, gate insulating films, and gate electrodes of the SOI-type MISFET and the bulk-type MISFET are formed in the same steps. The bulk-type MISFET and the SOI-type MISFET are formed on the same substrate, so that board area is reduced and a simple process can be realized by making manufacturing steps of the SOI-type MISFET and the bulk-type MISFET common.
    Type: Application
    Filed: March 4, 2013
    Publication date: September 19, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Ryuta TSUCHIYA, Shinichiro KIMURA
  • SEMICONDUCTOR DEVICE
    Publication number: 20130241515
    Abstract: A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.
    Type: Application
    Filed: January 28, 2013
    Publication date: September 19, 2013
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Masao YAMASHIRO, Tatsuya BANDO, Kunitoshi KAMADA, Hiroshi SATO
  • METHOD AND APPARATUS FOR PROVIDING FEEDBACK IN MULTIPOINT TRANSMISSIONS
    Publication number: 20130242764
    Abstract: An apparatus and a method are provided, which, for example in a user equipment, measure a transmission channel based on reference resources with respect to at least two transmission points, establish a feedback report based on the measurement, the feedback report including a plurality of channel feedback information related to each transmission point, and send the feedback report on a physical uplink control channel.
    Type: Application
    Filed: March 21, 2012
    Publication date: September 19, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Helka-Liina MÄÄTTÄNEN, Mihai ENESCU, Tommi KOIVISTO
  • RECONFIGURABLE RADIO FREQUENCY CIRCUITS AND METHODS OF RECEIVING
    Publication number: 20130244722
    Abstract: A reconfigurable radio frequency circuit is arranged for receiving at least one carrier in a wireless communications terminal arranged to receive at least two carriers, each of the two carriers being transmitted in a different one of a plurality of operating frequency bands, and each of the plurality of operating frequency bands occupying a part of a first or a second frequency range. The circuit includes a combiner for connecting the output of a first receiver filter at a first operating frequency band within the first frequency range to the input of an amplifier and for connecting the output of a second receiver filter at a second operating frequency band within the second frequency range to the input of the amplifier. The amplifier has a selectable operating frequency range, the operating frequency range being selectable at least between the first frequency range and the second frequency range.
    Type: Application
    Filed: March 1, 2013
    Publication date: September 19, 2013
    Applicant: RENESAS MOBILE CORPORATION
    Inventors: Seppo ROUSU, Juha VALTANEN