Abstract: A semiconductor device has a first-conductivity-type-channel MOSFET formed on a semiconductor substrate, wherein the first-conductivity-type-channel MOSFET is typically a P-channel MOSFET, and is composed of a gate insulating film and a gate electrode provided over the semiconductor substrate, the gate electrode contains a metal gate electrode provided over the gate insulating film, a metal oxide film provided over the metal gate electrode, and another metal gate electrode provided over metal oxide film.

Abstract: Gain setting can be performed at high speed while reducing DC offset due to a filter cutoff frequency changeover without the need for input signal muting. A filter circuit having first and second filters is capable of allowing settings of first and second cutoff frequencies. First and second filter switch circuits and a charging circuit including a charging resistor and a charging switch are provided. For a first time period, the first switch circuit is controllably turned on while the second switch circuit is controllably turned off, thereby providing the first filter function. For a second time period, the first switch circuit is controllably turned off while the second switch circuit is controllably turned on, thereby providing the second filter function. For the first time period, the charging switch is controllably turned on so that the second capacitor is charged via the charging resistor.

Abstract: A semiconductor device is disclosed which includes a tab (5) for use in supporting a semiconductor chip (8), a seal section (12) as formed by sealing the semiconductor chip (8) with a resin material, more than one tab suspension lead (4) for support of the tab (5), a plurality of electrical leads (2) which have a to-be-connected portion as exposed to outer periphery on the back surface of the seal section (12) and a thickness reduced portion as formed to be thinner than said to-be-connected portion and which are provided with an inner groove (2e) and outer groove (2f) in a wire bonding surface (2d) as disposed within the seal section (12) of said to-be-connected portion, and wires (10) for electrical connection between the leads (2) and pads (7) of the semiconductor chip (8), wherein said thickness reduced portion of the leads (2) is covered by or coated with a sealing resin material while causing the wires (10) to be contacted with said to-be-connected portion at specified part lying midway between the outer

Abstract: In a method of manufacturing a semiconductor device, element properties of an element property extraction pattern formed on a semiconductor wafer is extracted as element properties of a current control element corresponding to the element property extraction pattern. A supply energy to the current control element is set which is formed between nodes on the semiconductor wafer, based on the extracted element properties. The set supply energy is supplied to the current control element to irreversible control an electrical connection between the nodes through the device breakdown by the current control element.

Abstract: The present invention provides a technique capable of processing a plurality of interrupt causes sharing one interrupt request in different processors. An interrupt controller outputs an interrupt request when the interrupt request shared by a plurality of interrupt causes is notified. The interrupt request output by the interrupt controller is accepted by one of the processors. The processor accepting the interrupt request determines whether the interrupt cause that the processor must process has occurred, executes an interrupt processing when such interrupt cause has occurred, and notifies the generation of the interrupt request to another processor that processes another interrupt cause of the plurality of interrupt causes sharing the interrupt request when the relevant interrupt cause has not occurred.

Abstract: In a semiconductor device having element isolation made of a trench-type isolating oxide film 13, large and small dummy patterns 11 of two types, being an active region of a dummy, are located in an isolating region 10, the large dummy patterns 11b are arranged at a position apart from actual patterns 9, and the small dummy patterns 11a are regularly arranged in a gap at around a periphery of the actual patterns 9, whereby uniformity of an abrading rate is improved at a time of abrading an isolating oxide film 13a is improved, and surface flatness of the semiconductor device becomes preferable.

Abstract: A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.

Abstract: In a semiconductor device having element isolation made of a trench-type isolating oxide film 13, large and small dummy patterns 11 of two types, being an active region of a dummy, are located in an isolating region 10, the large dummy patterns 11b are arranged at a position apart from actual patterns 9, and the small dummy patterns 11a are regularly arranged in a gap at around a periphery of the actual patterns 9, whereby uniformity of an abrading rate is improved at a time of abrading an isolating oxide film 13a is improved, and surface flatness of the semiconductor device becomes preferable.

Abstract: When threshold voltages of constituent transistors are reduced in order to operate an SRAM circuit at a low voltage, there is a problem in that a leakage current of the transistors is increased and, as a result, electric power consumption when the SRAM circuit is not operated while storing data is increased. Therefore, there is provided a technique for reducing the leakage current of MOS transistors in SRAM memory cells MC by controlling a potential of a source line ssl of the driver MOS transistors in the memory cells.

Abstract: Synchronization between command and address signals commonly coupled to a plurality of memory devices to be operated in parallel and a clock signal coupled to the memory devices is achieved, while suppressing an increase in the clock wiring length. A semiconductor device has a data processing device mounted on a wiring substrate and a plurality of memory devices accessed in parallel by the data processing device. The data processing device outputs the command and address signals as a first frequency from command and address terminals, and outputs a clock signal as a second frequency from a clock terminal. The second frequency is set to multiple times of the first frequency, and an output timing equal to or earlier than a cycle starting phase of the clock signal output from the clock terminal can be selected to the command and address signals output from the command and address terminals.

Abstract: The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units.

Abstract: A moving image processor includes a first and a second moving image processing unit which are able to perform parallel operation, and a data transfer unit having a first buffer and a second buffer. The first moving image processing unit processes macroblocks MB00, - - - , of one row of one image sequentially, and the second moving image processing unit processes macroblocks MB10, - - - , of the next row sequentially. The first and the second moving image processors include a first and a second deblocking filters, respectively. Operation timing of the second filter is delayed by the processing time of two macroblocks, compared with operation timing of the first filter. The processing results of the first filter and the second filter are transferred to an external memory via the first buffer and the second buffer of the transfer unit.

Abstract: An electrostatic discharge (ESD) protection element using an NPN bipolar transistor, includes: a trigger element connected at one end with a pad. The NPN bipolar transistor includes: a first base diffusion layer; a collector diffusion layer connected with the pad; a trigger tap formed on the first base diffusion layer and connected with the other end of the trigger element through a first wiring; and an emitter diffusion layer and a second base diffusion layer formed on the first base diffusion layer and connected in common to a power supply through a second wiring which is different from the first wiring.

Abstract: A driving circuit includes: output buffers provided to drive first and second groups of data lines, which are connected with pixels of a display panel, with drive voltage signals supplied to input terminals of the output buffers, respectively; first and second common portions; and a first short-circuiting section provided for each of the data lines of the first group to connect the input terminal of a corresponding one of the output buffers for the first group of data lines to the first common portion in response to a first connection control signal. A second short-circuiting section is provided for each of the data lines of the second group to connect the input terminal of a corresponding one of the output buffers for the second group of data lines to the second common portion in response to a second connection control signal.

Abstract: Receiving a request for canceling setting, a control circuit erases data stored in a corresponding block, changes a value of a protection flag, and cancels protection setting. When an overall protection is set for any block, the control circuit prohibits access to all blocks, except when it is an operation mode for activating a memory program contained in the microcomputer. Further, control circuit permits an access to a block M only when partial protection is set, CPU is in the mode for activating a memory program contained in the microcomputer and the access is for reading an instruction code in accordance with an instruction fetch.

Abstract: A phase comparison circuit detects a phase difference between a data signal and the output from a variable delay circuit. A Code Operator detects a value of a control code corresponding to a delay equal to one period of an output clock. Then, when a delay amount of the variable delay circuit exceeds one period of a clock during synchronization of the output clock with the data signal while the control code is changed in accordance with the detection result by the phase delay circuit, a control code corresponding to a delay equal to one period of the output clock is added or subtracted to/from the control code at a time. Therefore, even if there is a difference in frequency between a data signal and a clock, it becomes possible to synchronize the data signal and the clock with application of the same clock phase.

Abstract: A semiconductor memory device includes a memory comprising a plurality of banks; an input section configured to input an address of a bank address, a row address and a column address; and a command generating circuit configured to issue one of a read command, a write command, and a refresh command based on to an input signal. A control section selects a selection bank from the plurality of banks based on the bank address when the read command or the write command is issued from the command generating circuit, performs a read operation or a write operation on the selection bank based on the row address and the column address, and performs a refresh operation on the selection bank when the refresh command is issued immediately after the read command or the write command.

Abstract: A display panel driver includes: a latch block configured to latch a drive data signal corresponding to an image in response to assertion of a latch enable signal supplied externally and output the latched drive data signal as a first latch data signal; an output control block configured to delay the first latch data signal in response to the latch enable signal to generate a second latch data signal; and a drive circuit section configured to drive a wiring provided in a display panel in response to the second latch data signal. One of rising timing and falling timing of the second latch data signal outputted from the output control block is delayed from the other timing. The one timing is determined in response to negation of the latch enable signal, and the other timing is determined regardless of the negation of the latch enable signal.

Abstract: SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced.

Abstract: In a non-volatile memory in which charge is injected from a gate electrode to a charge accumulating layer, charge injection efficiency, charge retention characteristic and reliability are all improved compared with a conventional gate structure. In a nonvolatile memory which carries out write/erasure by changing the total charge amount by injecting electrons and holes into a silicon nitride film which makes up a charge accumulating layer, in order to highly efficiently carry out charge injection from a gate electrode, the gate electrode of a memory cell is made up of a two-layer film of a non-doped polysilicon layer and a metal material electrode layer.