Abstract: A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface, formed on a major surface of a semiconductor substrate to extend from the memory cell region to the peripheral circuit region. A capacitor lower electrode assembly is formed in the memory cell region to upwardly extend to substantially the same height as the upper surface of the insulating film on the major surface of the semiconductor substrate. Additionally, the lower electrode assembly includes first and second lower electrodes that are adjacent through the insulating film. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface.

Abstract: A display apparatus includes: a display panel; and a frame memory configured to store an image data. An overdrive control section is configured to perform overdrive processing on a first image data read from the frame memory in a current frame period, by using a second image data read from the frame memory in a previous frame period to drive the display panel. A display panel drive control section is configured to drive the display panel based on the overdrive-processed image data.

Abstract: A wire short-circuit defect during molding is prevented. A semiconductor device has a tab, a plurality of leads arranged around the tab, a semiconductor chip mounted over the tab, a plurality of wires electrically connecting the electrode pads of the semiconductor chip with the leads, and a molded body in which the semiconductor chip is resin molded. By further stepwise shortening the chip-side tip end portions of the leads as the first edge or side of the principal surface of the semiconductor chip goes away from the middle portion toward the both end portions thereof, and shortening the tip end portions of those of first leads corresponding to the middle portion of the first edge or side of the principal surface which are adjacent to second leads located closer to the both end portions of the first edge or side, the distances between second wires connected to the second leads and the tip end portions of the first leads adjacent to the second leads can be increased.

Abstract: A memory array including memory mats is arranged in a U shape when seen in two dimensions, and a logic circuit and an analog circuit are arranged in a region unoccupied by the memory array. This facilitates transmission of power supply voltage and signals between the peripheral circuit including the analog and logic circuits and the pad band including power supply and data pads. The analog circuit is positioned close to the power supply pad, so that voltage drop due to the resistance of power supply interconnection is restricted. It is also possible to separate a charge pumping power supply interconnection and a peripheral circuit power supply interconnection in the vicinity of the power supply pad.

Abstract: Provided is a pulse phase difference detecting circuit including: a first delay circuit that receives a first pulse signal to output a signal obtained by delaying the first pulse signal as a second pulse signal and includes multiple serially-connected delay units having the same delay amount; a second delay circuit that receives the second pulse signal and includes multiple serially-connected delay units having the delay amount; a first delay adjustment circuit that adjusts a delay amount with respect to the second pulse signal and outputs the adjusted second pulse signal back to the first delay circuit as a third pulse signal; and a pulse arrival position detecting circuit that detects a pulse arrival position of the first pulse signal based on outputs of the delay units of the first and second delay circuits that are transmitted as the third and second pulse signals, respectively.

Abstract: A debug system includes: a microcomputer mounted on a target system; an emulator configured to execute emulation of the microcomputer based on a user program embedded in the microcomputer; and a computer connected with the emulator in radio communication and configured to instruct start of the emulation and to execute a debugging operation of the microcomputer based on a result of the emulation. The emulator includes: a control section configured to execute the emulation of the microcomputer based on control data from the computer; a radio communication state monitoring section configured to monitor a state of the radio communication between the computer and the emulator when the emulation is performed; and a storage section configured to store substitution control data.

Abstract: A semiconductor device includes a transistor with a substrate on which source and drain regions, both of a first conductivity type, and a channel region of a second conductivity type between the source and drain are formed, and a gate electrode formed in the channel region to bury a trench formed so the depth thereof changes intermittently in the width direction of the gate. In the channel region, each on a surface of the substrate and in a bottom portion of the trench, there are formed a second high-concentration region and a first high-concentration region, and the dopant concentration of the second conductivity type is higher than the dopant concentration of the second conductivity type in portions sideward from the trench. The dopant concentration of the second conductivity type in the first high-concentration region is higher than the dopant concentration of the second conductivity type in the second high-concentration region.

Abstract: In a semiconductor device having an LDMOSFET, a source electrode is at the back surface thereof. Therefore, to reduce electric resistance between a source contact region in the top surface and the source electrode at the back surface, a poly-silicon buried plug is provided which extends from the upper surface into a P+-type substrate through a P-type epitaxial layer, and is heavily doped with boron. Dislocation occurs in a mono-crystalline silicon region around the poly-silicon buried plug to induce a leakage failure. The semiconductor device has a silicon-based plug extending through the boundary surface between first and second semiconductor layers having different impurity concentrations. At least the inside of the plug is a poly-crystalline region. Of the surface of the poly-crystalline region, the portions located on both sides of the foregoing boundary surface in adjacent relation thereto are each covered with a solid-phase epitaxial region.

Abstract: The present invention provides a technique capable of suppressing variations in the height of each solder ball where an NSMD is used as a structure for each land. Vias that extend through a wiring board are provided. Lands are formed at the back surface of the wiring board so as to be coupled directly to the vias respectively. The lands are respectively formed so as to be internally included in openings defined in a solder resist. Half balls are mounted over the lands respectively. Namely, the present invention has a feature in that the configuration of coupling between each of the lands and its corresponding via both formed at the back surface of the wiring board is taken as a land on via structure and a configuration form of each land is taken as an NSMD.

Abstract: The present invention provides a technique for reducing current consumption in a reference voltage forming circuit without a significant increase in area while suppressing considerable degradative difference in reference voltage accuracy between a normal operation mode and a standby mode. In the standby mode, by using a clock signal fed from an oscillator circuit, the frequency-division control circuit produces an enable signal VREFON for determining ON/OFF states of the reference voltage generator circuit, the reference voltage forming circuit, and the capacitance charging regulator, and also produces a sampling/holding signal CHOLDSW for performing control so that a holding capacitor CH in a holding capacitance circuit is charged during an ON period of the reference voltage generator circuit, the reference voltage forming circuit, and the capacitance charging regulator, and so that any paths other than a leak current path are made unavailable to the holding capacitor CH during an OFF period thereof.

Abstract: In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n? type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n? type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n? type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.

Abstract: A method of manufacturing a semiconductor device includes: forming a gate insulating film over a semiconductor substrate; forming a mask that has an opening at a position corresponding to the gate insulating film formed in an NMOSFET forming region and covers the gate insulating film; forming a first metal layer over the gate insulating film disposed in the NMOSFET forming region and the mask formed in a PMOSFET forming region; and performing a heat treatment to thermally diffuse a metal material forming the first metal layer into the gate insulating film formed in the NMOSFET forming region.

Abstract: A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.

Abstract: A first conductive member made of metal is provided over a first wiring substrate, which is a mounting substrate in the lower tier, a through hole is provided in a second wiring substrate, which is a mounting substrate in the upper tier, at a position corresponding to the first conductive member in a plan view, and a wiring is exposed at the sidewall of the through hole. The first conductive member is inserted into the through hole on the corresponding first wiring substrate side and the first wiring substrate and the second wiring substrate are electrically coupled by filling the through hole with a second conductive member. an electrode pad that is electrically coupled to the second conductive member and over which a semiconductor member in the upper tier is mounted is formed on the main surface side of the second wiring substrate.

Abstract: Improved control over formation of low k air gaps in interlayer insulating films is achieved by plasma pretreatment of the region of the insulating film to be removed. The intended air gap region is exposed through a mask while the film region to be preserved is shielded by the mask. The intended air gap region is then exposed to a plasma so as to render it more susceptible to removal in a subsequent treatment. One or more Cu interconnects are embedded in both regions of the insulator film. The insulator film in the intended air gap region is then selectively removed to form air gaps adjacent a Cu interconnect in that region.

Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor wafer including a plurality of interconnect layers, the semiconductor wafer including: a plurality of chip-composing portions; a dicing region separating the chip-composing portions from each other; and a plurality of inter-chip interconnects formed in the dicing region and electrically connecting adjacent ones of the chip-composing portions; and forming semiconductor chips by dicing the dicing region so as to divide the chip-composing portions, wherein each of the inter-chip interconnects has a width of an intermediate portion narrower than widths of connection end portions connected to the adjacent ones of the chip-composing portions.

Abstract: An apparatus includes: an offset adjustment unit that supplies an offset correction signal corresponding to a frequency switching to an adder unit that receives an output from a mixer; a timing adjustment unit that adjusts the timing of a frequency switching signal supplied to a local oscillator and the timing of an offset correction amount switching signal supplied to the offset adjustment unit for changing an offset amount in correspondence with the frequency switching in the local oscillator; a noise amount measurement and calculation unit that receives a signal obtained by amplifying and filtering of the signal from the adder unit, to measure a noise amount of the signal and generates a timing determination signal based on the measured noise amount; and a control unit that controls the timing of the frequency switching signal and the offset correction amount switching signal supplied to the timing adjustment unit, based on the timing determination signal from the noise amount measurement and calculation u

Abstract: Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region.

Abstract: In a POP semiconductor device, a technology is provided which can increase the degree of freedom of semiconductor packages to be combined. A first metal conductive member is placed on a first wiring substrate which is a lower mounting substrate and a second metal conductive member is placed on a second wiring substrate which is an upper mounting substrate. By joining the corresponding portions of the first and second conductive members, the first and second wiring substrates are electrically coupled to each other. An electrode pad which is electrically coupled to the second conductive member and will have an upper semiconductor member 32 mounted thereon is formed on the main surface side of the second wiring substrate, and the electrode pad is also placed at a position planarly overlapping the lower semiconductor chip.

Abstract: A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. the third lead is arranged substantially in parallel to the inductive conductor. Leads at the joint portions have, for example, a bent structure, and the third lead is arranged to be close to the inductive conductor.