Abstract: A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.
Abstract: A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode.
Abstract: Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.
Abstract: Provided is a nonvolatile storage gate embedded logic circuit embedding a nonvolatile storage gate which can hold data after power supply cutoff and can cut off a power supply at the same time shifting into a standby state. The nonvolatile storage gate embedded logic circuit includes a logic calculation unit having a logic gate, and a nonvolatile storage gate having a nonvolatile storage element, a data interface control unit disposed so as to be adjoining to the nonvolatile storage element, and receiving a nonvolatile storage control signal for data read-out from the nonvolatile storage element and data write-in to the nonvolatile storage element, and a volatile storage element disposed so as to be adjoining to the nonvolatile storage element, receiving a data input signal and a clock signal, and outputting a data output signal.
Abstract: A light emitter driving device has a decoder portion which monitors a rectified voltage and generates a dimming signal, and a drive current control portion which controls a drive current to a light emitter according to the dimming signal. The decoder portion has a comparator which compares the rectified voltage with a predetermined threshold voltage to generate a comparison signal, a sampling counter which measures high-level and low-level periods of the comparison signal, a duty calculation portion which calculates the duty of the rectified voltage based on the output of the sampling counter, a filter calculation portion which excludes sporadic variation in duty by applying digital filtering to the output of the duty calculation portion, and a dimming signal generation portion which generates the dimming signal based on the output of the filter calculation portion.
Abstract: A lighting system has a solar power generation section, a control section which generates a control signal based on the output of the solar power generation section, a power conversion section which converts a direct-current electric power input thereto to output a direct-current electric power, and a lighting section which is driven by the direct-current electric power output from the power conversion section.
Abstract: Provided is a semiconductor device which includes a bonding wire, one end of which is connected to a bipolar device, the other end of which is connected to a conductive member, and the center of which is connected to a unipolar device, said semiconductor device being capable of improving the reliability of wire bonding. A package (4) includes a die pad (61), a source lead (63), a first MOSFET (11), and a first Schottky barrier diode (21). A source electrode (11S) of the first MOSFET (11), an anode electrode (21A) of the first Schottky barrier diode (21), and the source lead (63) are electrically connected by the bonding wire (31), one end of which is bonded to the source electrode (11S) of the first MOSFET (11), the other end of which is bonded to the source lead (63), and the center of which is bonded to the anode electrode (21A) of the first Schottky barrier diode (21).
Abstract: The light emitting device 1 includes a substrate 2, and an n-type conductive type semiconductor layer 3, a light emitting layer 4 and a p-type conductive type semiconductor layer 5 laminated in series on a surface 2A of the substrate 2. The light emitting layer 4, the p-type conductive type semiconductor layer 5, and a portion of the n-type conductive type semiconductor layer 3 excluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion 6. A p-side transparent electrode layer 14 is formed on a surface of the p-type conductive type semiconductor layer 5. The p-side transparent electrode 14 covers a substantially whole area of a predetermined current injection region 13 on a surface of the p-type conductive type semiconductor layer 5. A p-side electrode 15 is formed on a surface of the p-side transparent electrode layer 14.
Abstract: New ionic thermal acid generator compounds are provided. Also provided are photoresist compositions, antireflective coating compositions, and chemical trim overcoat compositions, and methods of using the compositions.
Abstract: The chip part of the present invention includes a substrate, an electrode on the substrate and having a front surface in which a plurality of recessed portions are formed toward the thickness direction thereof, and an element region having a circuit element that is electrically connected to the electrode.
Abstract: A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.
Abstract: A photoelectric converter according to the present invention includes an insulating layer, a plurality of lower electrodes that are mutually spaced and disposed on the insulating layer, a photoabsorption layer made of a chalcopyrite compound semiconductor and formed to cover the plurality of lower electrodes all together, and a transparent conductive film formed to cover the photoabsorption layer. Variation of sensitivity among pixels due to influence (damage) by etching of the photoabsorption layer is thereby eliminated and a pixel aperture ratio can be made 100%.
Abstract: An LED module 100 includes LED chips 21, 22 spaced apart from each other, and an LED chip 23 offset from a straight line connecting the LED chips 21 and 22 and located between the LED chips 21, 22 in the direction in which the LED chips 21, 22 are spaced. The module further includes a lead 31 with a bonding portion 31a and a mounting terminal surface 31d, a lead 32 with a bonding portion 32a and a mounting terminal surface 32d, and a lead 33 with a bonding portion 33a and a mounting terminal surface 33d. The mounting terminal surfaces 31d, 32d, 33d are flush with each other. Light from the LED chips 21, 22, 23 is emitted in the direction in which the mounting terminal surfaces 31d, 32d and 33d extend. Thus, light of different colors properly mixed can be emitted from a compact LED module.
Abstract: A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light emitting elements (3R, 3G, 3B) mounted on the main surface of the substrate (1), and an electrode (2R) electrically connected to the first semiconductor light emitting element (3R) and extending to the reverse surface of the substrate (1) via the through-hole (11). The first semiconductor light emitting element (3R) and the through-hole (11) are positioned between the second semiconductor light emitting element (3G) and the third semiconductor light emitting element (3B) in the longitudinal direction of the substrate (1). The second semiconductor light emitting element (3G) is arranged closer to one end of the substrate (1), whereas the third semiconductor light emitting element (3B) is arranged closer to the other end of the substrate (1).
Abstract: A motor drive device has a motor driver adapted to receive a first power supply voltage to drive a motor; an internal regulator adapted to generate from an input voltage an internal power supply voltage; and a power supply switcher adapted to receive both the first power supply voltage and a second power supply voltage lower than the first power supply voltage to output, as the input voltage, the second power supply voltage when the second power supply voltage is normal and to output, as the input voltage, the first power supply voltage when the second power supply voltage is abnormal.
Abstract: A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.
Type:
Grant
Filed:
April 3, 2012
Date of Patent:
July 28, 2015
Assignee:
ROHM CO., LTD.
Inventors:
Akihiro Kimura, Takeshi Sunaga, Shouji Yasunaga, Akihiro Koga
Abstract: A display device including two or more lamp groups, each having one or more lamps, includes a driving control signal generating unit and an inverter unit. The driving control signal generating unit generates driving control signals to control the driving of at least one of the two or more lamp groups. The inverter apparatus includes two or more inverter circuits configured to receive the driving control signals. In the display device, each of the two or more inverter circuits sets the operation frequency of a corresponding lamp group based on the driving control signals, and generates an operation voltage for the corresponding lamp group according to the set operation frequency.
Abstract: A driving circuit for a light emitting element is disclosed. The driving circuit includes a DC-DC converter configured to generate a drive voltage between a first line and a second line; a current driver, configured to be connected to the light emitting element in series between the first line and the second line, configured to supply a drive current to the light emitting element; a protection resistor configured to be connected to the light emitting element in series between the first line and the current driver; and a controller configured to control the DC-DC converter such that a first detection voltage, which corresponds to a voltage between both ends of the current driver, approaches a predetermined reference voltage and perform a predetermined protection process if the drive voltage between the first line and the second line exceeds a predetermined first threshold voltage.
Abstract: Provided is a two-dimensional photonic crystal surface emitting laser having an active layer for generating light of a predetermined wavelength range by an injection of electric current and a two-dimensional photonic crystal layer provided on one side of the active layer, the layer having a plate-shaped base member in which modified refractive index areas whose refractive index differs from that of the base member are arranged.
Abstract: A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer.