Abstract: An LED lamp includes: a plurality of light source units, each of which includes one or more LED chips and an emission surface through which light from the LED chips is emitted; and a lens unit having a plurality of lenses, each of which is located in front of the emission surface of each of the plurality of light source units.

Abstract: A semiconductor device having a multi-level interconnection structure including a plurality of interconnection layers stacked one on another on a semiconductor substrate is provided, and a production method for the semiconductor device. In the production method, forming each of the interconnection layers of the multi-level interconnection structure includes: forming a real interconnection and a dummy interconnection, forming an insulative film covering the real interconnection and the dummy interconnection, and planarizing a surface of the insulative film. The production method may include computing an in-plane distribution of an overall thickness of the multi-level interconnection structure to be expected when no dummy interconnection is formed; and defining a dummy present zone and a dummy absent zone. The dummy interconnection is formed in the defined dummy present zone outside the defined dummy absent zone in each of the interconnection layers.

Abstract: An LED lamp A1 includes an LED unit 1 in the shape of a straight tube with a plurality of LED modules 12 fixed therein, and also includes a pair of bases 2 that receive electric power from outside and are attached to the ends of the LED unit 1 spaced in the longitudinal direction of the LED unit. The LED unit 1 and the bases 2 are rotatable relative to each other about an axis extending in the longitudinal direction. With this arrangement, the direction of light emission can be changed, with the LED lamp attached to a general-use fluorescent lighting fixture.

Abstract: An external resistor is connected to a detection terminal. A pulse modulator is configured to generate a pulse signal SPWM having a duty ratio adjusted such that the output voltage VOUT of a DC/DC converter approaches a target value. A pulse modulator is configured to switch the pulse signal SPWM to a level that corresponds to the off level of the switching transistor according to a detection voltage VS that develops at the detection terminal. A short-circuit detection circuit is configured to generate a short-circuit detection signal which is asserted when the detection voltage VS is higher than a predetermined threshold voltage VTH after a judgment time elapses after the pulse signal SPWM is switched to an on level that corresponds to the on state of the switching transistor. When the short-circuit detection signal is asserted, the pulse modulator is configured to switch the pulse signal SPWM to the off level.

Abstract: The directional coupler includes: lattice points periodically arranged in the 2D-PC slab and configured to diffract optical waves, THz waves, or millimeter waves in PBG frequencies in PBG structure of the 2D-PC slab in order to prohibit existence in a plane of the 2D-PC slab; a first 2D-PC waveguide formed of a line defect; a second 2D-PC waveguide which can be mode-coupled to the first waveguide; a directional coupling unit disposed between the first waveguide and the second waveguide in two rows, and having lattice points between waveguides of which the radius is smaller than that of the lattice points, wherein in order to match the first waveguide with an operational band at a side of an input port from the directional coupling unit, the width of the second waveguide is narrowed so that the whole dispersion curve of the directional coupling unit is moved to a higher-frequency side.

Abstract: A method for polymerizing an aromatic multi-functional carbodiimide by contacting the aromatic multi-functional carbodiimide with a carboxylic acid salt at a temperature from 15° C. to 90° C.

Abstract: A chip part according to the present invention includes a substrate having a front surface and a side surface, an electrode integrally formed on the front surface and the side surface so as to cover an edge portion of the front surface of the substrate, and an insulating film interposed between the electrode and the substrate. A circuit assembly according to the present invention includes the chip part according to the present invention and a mounting substrate having a land, bonded by solder to the electrode, on a mounting surface facing the front surface of the substrate.

Abstract: A chip part according to the present invention includes a substrate having a penetrating hole, a pair of electrodes formed on a front surface of the substrate and including one electrode overlapping the penetrating hole in a plan view and another electrode facing the one electrode, and an element formed on the front surface side of the substrate and electrically connected to the pair of electrodes.

Abstract: The present invention relates to a water-containing coating composition thickened with a hydrophobically modified alkali soluble emulsion, wherein the composition is neutralized by a combination of an alkali metal hydroxide or ammonium hydroxide and a low VOC alkanolamine.

Abstract: The instant invention provides a crosslinkable aqueous composition, method of producing the same, crosslinked compositions, and method of producing the same. The crosslinkable composition comprising: an aqueous dispersion comprising; (a) water; (b) a polycarbamate comprising at least an average of 2.0 carbamate functional groups; (c) a polyaldehyde comprising at least two aldehyde groups; (d) an acid catalyst; and (e) optionally one or more surfactants; wherein said aqueous dispersion has a pH in the range of less than 7; and wherein said composition is capable of being crosslinked at a temperature in range of less than 80° C. upon substantial removal of water.

Abstract: Among the technical characteristics disclosed in this specification, the pulse wave sensor with one of the technical characteristic includes a construction to detect the pulse wave at a wrist (i.e., a construction to measure the pulse wave to be worn at the wrist). To be more concrete, the pulse wave sensor includes a measurement unit to measure the pulse wave, a power source unit to supply power to the measurement unit, a cable to connect between the measurement unit and the power source unit electrically, and a armlet type housing to contain the measurement unit, the power source unit, and the cable.

Abstract: The present invention provides aqueous coating compositions comprising one or more emulsion copolymer made from itaconic acid, a sulfonic acid or sulfonate ester monomer and an additional acid monomer which is a carboxylic acid and having a glass transition temperature of from ?45° C. to ?10° C., and one or more pigment, opacifier, filler, extender, or mixture of any of these at a % PVC of from 20 to 55, preferably 30 to 50, wherein coatings made from the coating compositions provide improved resistance to water swelling and dirt pickup resistance. The improvements are observed regardless of whether the compositions contain or are substantially free of zinc or divalent metal ions, or salts or compounds containing them. The present invention also provides roofing substrates coated with the aqueous compositions.

Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

Abstract: A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer provided with a gate trench, a first conductivity type source region formed to be exposed on a surface side of the semiconductor layer, a second conductivity type channel region formed on a side of the source region closer to a back surface of the semiconductor layer to be in contact with the source region, a first conductivity type drain region formed on a side of the channel region closer to the back surface of the semiconductor layer to be in contact with the channel region, a gate insulating film formed on an inner surface of the gate trench, and a gate electrode embedded inside the gate insulating film in the gate trench, while the channel region includes a channel portion formed along the side surface of the gate trench so that a channel is formed in operation and a projection projecting from an end portion of the channel portion closer to the back surface of the semiconductor layer toward the back surface.

Abstract: A coating composition for the enteric coating of capsule halves made of water-soluble or water-swellable polymer material in a dipping process is provided. The composition is an aqueous dispersion or solution, containing a polymer mixture of at least one first (meth)acrylate copolymer, which is enteric, and at least one further (meth)acrylate copolymer, which is enteric or water-insoluble, and also auxiliaries which influence the viscosity of the dispersion and the elasticity of the dried polymer film. The solids content of the dispersion or solution is more than 25% by weight and the viscosity is 150 to 1500 mPa·s and a dried film produced from the dispersion or solution has an elongation at break of at least 200%. Also provided is a capsule composed of two capsule halves coated with the dispersion or solution in a dipping process does. The enteric capsule does not dissolve in 0.1 N HCl at pH 1.2 after two hours, but completely dissolves in buffer at pH 6.8 in less than 30 minutes.

Abstract: An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

Abstract: A photoacid generator has the formula (I): wherein R1, R2, R3, L1, L2, L3 X, Z+, a, b, c, d, p, q, and r, are defined herein. A photoresist comprises the photoacid generator, and a coated article comprises the photoresist. The photoresist can be used to form an electronic device.

Abstract: The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10?9 A/cm2 to 1×10?4 A/cm2 in a rated voltage VR.

Abstract: A first rectified voltage obtained by rectifying an AC voltage is input to an input detection terminal of a control circuit. A first NMOS transistor configured as a depletion-type high-voltage element, and its drain is connected to the input detection terminal, and its gate is connected to its source. An AC voltage detection circuit detects the amplitude of the AC voltage based on a current that flows through the first NMOS transistor.