Abstract: A signal-transferring device having a first circuit and a second circuit that operate on different ground references, and a third circuit for transferring signals while providing insulation between the first circuit and the second circuit. The second circuit switches a logic level of an output signal in accordance with the logic level of an input signal notified by the first circuit, and notifies the first circuit about the logic level of the output signal. The first circuit notifies the second circuit about the logic level of the input signal not only when the logic level of the input signal has been switched, but also when the logic level of the output signal notified by the second circuit does not match the logic level of the input signal.

Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

Abstract: A semiconductor device includes a lower wiring layer made of a conductive material; an upper wiring layer formed in an upper layer than the lower wiring layer; and a fuse film, at least a portion of the fuse film being formed in a plug formation layer in which a plug for connecting the lower wiring layer and the upper wiring layer is formed, and made of a conductive material including a metallic material other than copper.

Abstract: There are provided a microchip provided with a liquid reagent retaining portion that retains the liquid reagent, and a usage thereof, wherein the liquid reagent is sealed into the liquid reagent retaining portion by a sealant inactive to the liquid reagent, exhibiting flowability at the time of using the microchip, and the microchip further has a separating portion to separate the liquid reagent and the sealant, connected to the liquid reagent retaining portion, and the separating portion is composed of a separation tank for separating the liquid reagent and the sealant, and an accommodation tank for accommodating a separated substance, connected to the separation tank by a first flow path.

Abstract: A semiconductor device of the present invention includes a semiconductor substrate, stripe-shaped trenches for separating the semiconductor substrate into a plurality of active regions, a buried film having a projecting portion that projects from the semiconductor substrate, buried into the trenches, a source region and drain region of a second conductivity type, which are a pair of regions formed in the active region, for providing a channel region of a first conductivity type for a region therebetween, and a floating gate consisting of a single layer striding across the source region and the drain region, projecting beyond the projecting portion in a manner not overlapping the projecting portion, in which an aspect ratio of the buried film is 2.3 to 3.67.

Abstract: Provided are a microchip including a fluid circuit consisting of a space formed therein, a light-absorbing first substrate and a light-transmitting second substrate bonded onto the first substrate, and a groove, having a V-shaped section, extending parallelly to the fluid circuit on a surface of the second substrate opposite to the first substrate on a position immediately above at least part of the fluid circuit and a method of manufacturing the same.

Abstract: A method for depositing a Group 1b/gallium/(optional indium)/Group 6a material using a gallium formulated ink, comprising, as initial components: (a) a Group 1b/gallium/(optional indium)/Group 6a system which comprises a combination of, as initial components: a gallium component; a selenium component; an organic chalcogenide component; a Group 1b component comprising, as an initial component, at least one of CuCl2 and Cu2O; optionally, a bidentate thiol component; optionally, an indium component; and, (b) a liquid carrier component; depositing the gallium formulated ink on the substrate; heating the deposited gallium formulated ink to eliminate the gallium carrier, the first liquid carrier, the second liquid carrier and the, optional, third liquid carrier leaving a Group 1b/gallium/(optional indium)/Group 6a material on the substrate; and, optionally, annealing the Group 1b/gallium/(optional indium)/Group 6a material.

Abstract: The instant invention provides crosslinkable compositions, and method of producing the same. The non-aqueous single phase crosslinkable composition comprises: (a) a polyol having an average of 2 or more hydroxyl functional groups; (b) polyaldehyde, or acetal or hemiacetal thereof; and (c) an acid catalyst having pK of less than 6; and (d) optionally one or more organic solvents.

Abstract: An LED lamp (1) is employed in a state mounted on a lighting fixture. The LED lamp (1) includes an LED source portion (2) including a plurality of LED chips, an illuminance sensor module (12) detecting ambient illuminance, and a controller controlling the LED source portion (2) in response to illuminance of ambient light other than light emitted by the LED source portion (2) on the basis of an output signal received from the illuminance sensor module (12) when the LED source portion (2) is in a lighting-up state. When the LED source portion (2) is in the lighting-up state, there is a possibility that the illuminance sensor module (12) detects not only the ambient light illuminance but also spontaneous light illuminance. The controller eliminates influence by the spontaneous light illuminance, and controls the LED source portion (2) in response to the illuminance of the ambient light.

Abstract: The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film.

Abstract: Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p+ region for a diode that forms a pn junction with the n-type region for a diode at the bottom of the diode trench; and a schottky electrode that forms a schottky junction with the n-type region for a diode at side walls of the diode trench.

Abstract: A semiconductor light-emitting device includes a substrate, an LED chip mounted on the substrate, and a resin package covering the LED chip. The substrate includes a base and a wiring pattern formed on the base. The resin package includes a lens. The base includes an upper surface, a lower surface and a side surface extending between the upper surface and the lower surface. The LED chip is mounted on the upper surface of the base. The side surface of the base is oriented in a lateral direction. The wiring pattern includes a pair of first mount portions and a pair of second mount portions. The paired first mount portions are formed on the lower surface of the base. The paired second mount portions are oriented in the lateral direction and offset from the side surface of the base in the lateral direction.

Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a dopant-containing polymer and a non-polar solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300° C. for 1 second to 24 hours to diffuse the dopant into the substrate; wherein the dopant-containing polymer is a polymer having a covalently bound dopant atom; wherein the dopant-containing polymer is free of nitrogen and silicon; and wherein the method is free of a step of forming an oxide capping layer over the coating prior to the annealing step.

Abstract: Technology for controlling image display according to the state of a viewer wearing eyeglasses to view 3D images is provided. When an inclined angle of eyeglasses is in a predetermined range, an image display device alternately displays a left-eye image and a right-eye image. When the inclined angle of the eyeglasses exceeds the predetermined range, the image display device does not switch the left-eye image with the right-eye image. For example, the image display device displays 2D images. Optical shutters of the eyeglasses are synchronized with the left-eye image and the right-eye image. When the image display device does not switch the left-eye image with the right-eye image, the optical shutters are both open.

Abstract: Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

Abstract: A process is provided for making a calcium carbonate slurry comprising the steps of (a) forming a mixture comprising water, an acidic dispersant system, and calcium carbonate, (b) grinding said mixture to form a preliminary slurry of particles of said calcium carbonate, wherein 50% or more by weight of said calcium carbonate in said preliminary slurry, based on the total weight of said calcium carbonate in said preliminary slurry, is in the form of particles having diameter of 2 micrometers or less, and wherein the pH of said preliminary slurry is 9.0 or below, and (c) after step (b), adding one or more organic neutralizing agent to bring the pH of said preliminary slurry to 9.4 or above.

Abstract: The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The polishing pad includes a polymeric matrix, the polymeric matrix having a polishing surface. In addition, polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. The polymeric microelements have an outer surface and being fluid-filled for creating texture at the polishing surface. And alkaline-earth metal oxide-containing regions are distributed within each of the polymeric microelements and spaced to coat less than 50 percent of the outer surface of the polymeric microelements.

Abstract: A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.

Abstract: A multi-stage polymer composition comprising a crosslinked core having a Tg of from ?85 to ?10° C.; an intermediate region which comprises one or more intermediate layers, wherein each of the intermediate layers comprises from 88.5 to 99.9 weight percent of units derived from a one or more monomers selected from the group consisting of alkyl(meth)acrylate monomers, from 0 to 5 weight percent of units derived from a cross-linking monomer, a graft-linking monomer, or a combination of two or more thereof, optionally from 0 to 2 weight percent units derived from one or more chain transfer agents; wherein there is a compositional gradient between the intermediate layers such that the Tg transitions from ?30° C. to 70° C. over the width of the intermediate region, and an outermost layer which has a Tg of from 40° C. to 110° C. is provided.