Abstract: A jitter measurement circuit includes: a conversion section sampling one of a reference signal and a measurement target signal in response to the other signal, thereby obtaining a sampling data string; and a determination section measuring jitter of the measurement target signal on the basis of the sampling data string obtained by the conversion section. Since the reference signal is a stable signal having a predetermined cycle, the sampling data string as a measurement result depends on the measurement target signal. Therefore, it is possible to simply measure jitter level in accordance with irregularity of the measurement result and on the basis of relative measurement to expected value data.

Abstract: A plurality of MOS type FET devices 14 and 16 are provided on a semiconductor substrate 12. A lower interlayer insulating film 20 is provided thereon. Each of through holes 22, which extends from each of gate electrodes 14c of the plural FET devices via source/drain regions 14b and 16a, is defined in the lower interlayer insulating film 20. A local wiring 24 is buried in the through hole 22 to connect each gate electrode 14c and the source/drain regions 14b and 16a. Further, an upper interlayer insulating film 26 is provided on the local wiring 24 and the lower interlayer insulating film 20. Upper electrode layers 28 are placed on the surface of the upper interlayer insulating film 26.

Abstract: A transistor is protected when a high voltage is applied to a drain, without an increase in the capacitance of the drain. A semiconductor device has a gate electrode on a silicon semiconductor substrate on a gate oxide film, and a pair of N+-type diffusion regions at a surface of a silicon semiconductor substrate on either side of the gate electrode. An N-type diffusion region in the N+-type diffusion region of the drain protrudes to a position deeper in the substrate than the N+-type diffusion region.

Abstract: There are provided a test apparatus and method for testing a semiconductor integrated circuit which enables improvements in the ease of operation and convenience of a BOST device and shortening of a test time. Numeric codes are assigned to tests. A test apparatus is equipped with memory and an analysis section. A test requirement table—in which hardware requirements required for conducting a test are set on a per-numeric-code basis—is stored in the memory. Test requirements corresponding to a numeric code are read from the memory, whereupon a test is performed. The analysis section analyzes a digital test output and sends the result of analysis to an external controller.

Abstract: A transportation system includes lifts for inter-floor carriage, a carrier cart for intra-floor carriage, and a transit stocker for loading/unloading an article to/from the lift. For each of the lifts, operation status, that is, operating or not, is recorded in a database. The operating rate of each lift, carriage queue for each lift, and an inventory of each transit stocker might also be recorded in the database. When carriage of an article is required, a lift optimum for the carriage is selected from among the lifts based on the information recorded on the database.

Abstract: A resist pattern formation method is characterized in that, after a resist pattern is formed on a wafer, a residue generated between resist sidewalls forming the resist pattern is irradiated with an electron beam under a reduced pressure. It is also preferable to detect the residue with pattern defect inspection equipment, and irradiate the detected residue site with an electron beam under a reduced pressure using an electron microscope. The reduced pressure is preferably equal to or lower than 5.0×102 Pa, and an acceleration voltage is preferably equal to or lower than 1200 V. A manufacturing method of a semiconductor device according to the present invention uses the above-described formation method to form a resist pattern. Thus, the residue generated between resist sidewalls can be removed without varying a dimension of a resist pattern spacing.

Abstract: A metal wiring layer, a plurality of metal plugs, a metal wiring layer, a plurality of metal plugs, a metal wiring layer, a plurality of metal plugs and a metal wiring layer are provided so as to surround a space located in the direction perpendicular to a main surface of a semiconductor substrate of a photoelectric conversion element. These metal parts form a light path. The light path reflects incident light which is entered from outside, thereby preventing the incident light from leaking to other photoelectric conversion elements. Therefore, it is possible to obtain a charge coupled device in which the disadvantage of color dispersion and color blurring between pixels adjacent to each other is suppressed.

Abstract: A test-assisting device (BOST device) is provided in the vicinity of a testing circuit board that transmits signals to and receive signals from a semiconductor integrated circuit to be tested, and the D/A converter circuit for testing, the A/D converter circuit for testing, the measured-data memory, and the analyzing portion of the test-assisting device are carried by separate circuit boards.

Abstract: A BOST (built-off self-test) board has a connector, a substrate for use with a BOST board, and an external self-test circuit. The external self-test circuit has an ADC (analog-to-digital converter)/DAC (digital-to-analog converter) measurement section and a DSP (digital signal processor). In accordance with a control signal input by way of a specific terminal provided in a connector, the ADC/DAC measurement section transmits a predetermined test signal to the specific terminal provided in the connector. Further, in response to the test signal, the ADC/DAC measurement section receives a response signal input to the specific terminal provided in the connector. The DSP analysis section analyzes the response signal, thereby determining whether or not the response signal is an appropriate signal. Further, the DSP analysis section transmits, to the specific terminal provided in the connector, a test result signal indicating whether or not the response signal is appropriate.

Abstract: A semiconductor test apparatus includes an analog-to-digital converter for converting into a digital signal an analog output from a circuit under test; a test-apparatus-ADC-control-signal generation circuit for generating a control signal for the analog-to-digital converter in accordance with an activation signal entered from the outside; a measured data memory for storing, as measured data for each conversion, a signal output from the analog-to-digital converter; an address counter for generating an address signal for the measured data memory; a DAC counter for generating data to be input to the circuit under test; and a data write control circuit which produces, in response to a flag signal output from the analog-to-digital converter and representing that conversion is being performed, an update signal for the address counter, a memory write signal for the measured data memory, and an update signal for the DAC counter.

Abstract: An apparatus and a method for testing a semiconductor that can be subjected to the total test in the state of the final product after sealing in the stage of the wafer test in the test of each of a plurality of semiconductor chips sealed together, and can improve the yield of final products. In the assembly step, another chip sealed together with a chip to be measured is mounted on a probe card, and the tester conducts the test of the chip to be measured through a probe needle connected to the chip to be measured. By transmitting a predetermined command, such as writing and/or reading, from a chip to be measured to another chip, the chip to be measured and the other chip are made to execute operations when these chips are sealed together in a package, and the tester is made to analyze the result of operations and to perform pass or fail judgment.

Abstract: A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.

Abstract: A semiconductor device testing method is disclosed which comprises a first process 39, a second process 41 and a third process 43. In the first process 39, a test function part of a semiconductor device having a built-in self-test function is subjected to a self-diagnostic test, and a main circuit part of the device in question is tested by its test function part. If the result of either of the two tests on the device turns out to be abnormal, the device in question is rejected as defective. The test results are saved. In the second process 41, the main circuit part of each semiconductor device rejected as defective in the first process 39 is tested by use of an external test signal. If the result of the test on the semiconductor device judged faulty in the first process 39 turns out to be normal in the second process 41, then the device in question is judged normal in the third process 43.

Abstract: A second trench (105b) is formed inside a semiconductor layer (102), penetrating a base layer (103) and moreover extends along a second direction (D2) while being connected to one end portion of each first portion (P1) of a first trench (105a) extending along a first direction (D1). A second gate control electrode (107b) is connected to a first gate control electrode (107a) at the one end portion, filling the inside of the second trench (105b). A gate contact portion (109) extending along the second direction (D2) exposes part of an upper surface of the second gate control electrode (107b). A gate aluminum electrode (108) is connected to the second gate control electrode (107b) through the gate contact portion (109), protruding outside beyond an end (103e) of the base layer (103) by a distance (W0).

Abstract: To provide a tester for semiconductor integrated circuits that can test an A/D converter circuit and a D/A converter circuit in a mixed signal type semiconductor integrated circuit comprising an A/D converter circuit and a D/A converter circuit at high accuracy and at high speed. A test assisting device is provided in the vicinity of a testing circuit board on which a semiconductor integrated circuit to be tested is mounted. The test assisting device comprises a data circuit to supply analog test signals to the A/D converter circuit of the semiconductor integrated circuit to be tested, and digital test signals to the D/A converter circuit thereof, a measured data memory to store test outputs from the semiconductor integrated circuit to be tested, and an analyzer portion to analyze data stored in the measured data memory.

Abstract: A semiconductor device includes an epitaxial layer formed on a P type silicon substrate; a P+ diffusion layer for dividing the epitaxial layer into an N− epi layer, which constitutes a device formation region, and an N− epi layer, which constitutes an invalid area; and an aluminum wire for electrically connecting the N− epi layer (invalid area) to the P+ diffusion layer. Since the potential of the N− epi layer (invalid area) can be made equal to that of the P+ diffusion layer, it is possible to prevent the electron supply from the P+ diffusion layer to the invalid area even when electrons are supplied to the device formation region by a counterelectromotive force produced by a load having an inductance L.

Abstract: A collector region is formed on a semiconductor substrate. An emitter electrode, an external base electrode and a gate electrode are formed on the semiconductor substrate. The position of the interface between the gate electrode and the semiconductor substrate is rendered higher than the position of the interface between the external base electrode and the semiconductor substrate. Thus provided is a semiconductor device so improved that dispersion of the withstand voltage of a gate oxide film and dispersion of characteristics such as a threshold voltage and a drain-to-source current are reduced.

Abstract: In a threshold analysis method obtaining threshold voltages of all bits in a flash memory through single processing, fail bit map information is examined in order from a smaller voltage applied to the flash memory. As to a bit exhibiting a value, read from the flash memory, first mismatching a determination value, the threshold voltage is settled on the basis of a voltage applied when the bit fails in reading.

Abstract: There are provided a test apparatus and a test method for testing a semiconductor integrated circuit which facilitate control of a BOST device and improve the versatility of the BOST device. There is provided an interface for exchanging signals between a BOST device and an external controller. A test control signal and a test result analysis signal are exchanged by means of the interface, thus effecting a test and analysis of the test.

Abstract: An uppermost interlayer isolation film is provided on a semiconductor substrate. An uppermost wire is provided on the uppermost interlayer isolation film. A silicon oxide film is provided to cover the upper surface and the side wall of the uppermost wire. A nitride film is provided on the uppermost interlayer isolation film to cover the uppermost wire through the silicon oxide film. A polyimide film is provided on the nitride film. A portion of the uppermost interlayer isolation film other than a portion located under the uppermost wire is downwardly scooped. The nitride film covers the scooped portion of the uppermost interlayer isolation film. According to the present invention, a semiconductor device improved to be capable of improving coverage of a silicon nitride passivation film is obtained.