Abstract: A non-volatile storage system includes a mechanism to compensate for over programming during the programming process. That is, after the programming process starts for a set of data and target memory cells, and prior to the programming process completing for the set of data and the target memory cells, the system determines whether a first group of the memory cells has more than a threshold number of over programmed memory cells. If so, then the system adjusts programming of a second group of memory cells to reduce the number of programming errors.

Abstract: An illustrative embodiment disclosed is a circuit including an edge-triggered flip-flop having a first input port, a first clock port, and a first output port. The edge-triggered flip-flop receives, at the first clock port, a strobe having a first edge and a second edge. The edge-triggered flip-flop receives, at the first input port, a control byte time-aligned with the first edge and a data byte time-aligned with the second edge. The edge-triggered flip-flop passes, to the first output port, the control byte based on the first edge and the data byte based on the second edge. The circuit includes an inputs/outputs (I/O) decoder coupled to the first output port. The I/O decoder sends the control byte to microcontroller and sends the data byte to memory cells.

Abstract: Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.

Abstract: Boost converter in memory chip. A non-volatile memory including an in-chip boost converter includes: a first memory structure defines control circuitry disposed on a first substrate, and a first metal layers disposed adjacent the control circuitry, where the first metal layer couples elements of the control circuitry; and a second memory structure defines a memory array disposed on a second substrate, and a second metal layer disposed adjacent the memory array, where the first and second metal layers are bonded together by a permanent physical bond formed between the first and second metal layers; and a boost converter defining an inductor disposed in the first and second metal layers, and a transistor circuit disposed in the control circuitry. The non-volatile memory, where the inductor further defines a first terminal coupled to a voltage source, and a second terminal coupled to a load by way of a transistor circuit.

Abstract: A methodology and structure for a bit line boost during a programming operation in a nonvolatile memory are described. The inhibit bit line is driven for a first precharge time period with a constant current. The program bit line boost is delayed for a second precharge time period while continuing to drive the inhibit bit line to account for a resistance-capacitance (RC) delay on the inhibit bit line. Thereafter, the program bit line is boosted at the end of the second time period to a program voltage level. The signal level at the fare end of the bit line remote from the driven end of the bit line is sensed to determine when the inhibit bit line reaches a level (e.g. VDDSA) or a level at which the current limits are turned off. Thereafter, the bit line boost can be performed.

Abstract: Techniques are presented for the application of neural networks to the fabrication of integrated circuits and electronic devices, where example are given for the fabrication of non-volatile memory circuits and the mounting of circuit components on the printed circuit board of a solid state drive (SSD). The techniques include the generation of high precision masks suitable for analyzing electron microscope images of feature of integrated circuits and of handling the training of the neural network when the available training data set is sparse through use of a generative adversary network (GAN).

Abstract: A non-volatile memory system comprises a memory structure and a control circuit connected to the memory structure. The control circuit includes a programmable and reprogrammable microcontroller. The microcontroller has a first processor that executes instructions to coordinate sequences of voltages applied to the memory structure by a first circuit in order to perform memory operations. The microcontroller has a second processor that executes second instructions to control a second circuit to test conditions of the non-volatile memory cells in response to the voltages applied to the memory structure. The microcontroller may have a third processor that controls the flow of the memory operation and directs the first and second processors to execute the instructions. The instructions of the various processors may be updated, which provides for flexible flow, core operation control, and condition testing.

Abstract: A methodology and structure for driving a selected wordline to a negative voltage without the need for a negative wordline voltage generator. The methodology includes the step of boosting a non-selected wordline to a first positive voltage. The methodology proceeds with holding a selected wordline, which is adjacent to and capacitively coupled with the non-selected wordline, at zero voltage. The methodology continues with floating the selected wordline. The methodology proceeds with driving the non-selected wordline to a lower voltage to shift the selected wordline to less than zero volts due to capacitance effects. The methodology continues with the step of accelerating charge loss in a defective memory cell connected to the selected wordline while at a negative voltage during a soft erase operation.

Abstract: Program disturb is a condition that includes the unintended programming of a memory cell while performing a programming process for other memory cells. Such unintended programming can cause an error in the data being stored. In some cases, program disturb can result from electrons trapped in the channel being accelerated from one side of a selected word line to another side of the selected word line and redirected into the selected word line. To prevent such program disturb, it is proposed to open the channel from one side of a selected word line to the other side of the selected word line after a sensing operation for program verify and prior to a subsequent programming voltage being applied.

Abstract: A perpendicular spin transfer torque MRAM memory cell includes a magnetic tunnel junction that has a free layer, a pinned layer and a tunnel barrier between the free layer and the pinned layer. The free layer has a switchable direction of magnetization perpendicular to the plane of the free layer. A cap layer is provided adjacent to the magnetic tunnel junction. The thickness of the cap layer is increased so that the cap layer acts as a heating layer, which results in a reduction of the current density during writing and increases the write margin. In some embodiments, a resistive heating layer is added to the memory cell, adjacent to the cap layer, in order to achieve the lower current density and increased write margin while also improving signal to noise ration during reading by eliminating shot noise.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for a single pulse memory operation. An electrical source is configured to generate an electrical pulse. A selector for a memory cell is configured to conduct an electrical pulse from an electrical source to a memory cell in response to the electrical pulse exceeding a threshold. A control circuit is configured to maintain at least an operational level for the electrical pulse for a predefined time period to perform an operation on the memory cell.

Abstract: A non-volatile memory system comprises a memory structure and a control circuit connected to the memory structure. The control circuit includes a programmable and reprogrammable microcontroller. The microcontroller has a first processor that executes instructions to coordinate sequences of voltages applied to the memory structure by a first circuit in order to perform memory operations. The microcontroller has a second processor that executes second instructions to control a second circuit to test conditions of the non-volatile memory cells in response to the voltages applied to the memory structure. The microcontroller may have a third processor that controls the flow of the memory operation and directs the first and second processors to execute the instructions. The instructions of the various processors may be updated, which provides for flexible flow, core operation control, and condition testing.

Abstract: In non-volatile memory circuit, the area devoted to the cache buffer of the read and write circuitry is reduced through the sharing of data latches. In an array structure where memory cells are connected along bit lines, and the bit lines organized into columns, each of the columns has an associated set of data latches, including one or more data latches for each bit line of the column. Data is transferred in and out of the read and write circuit on a data bus, where data is transferred between the data latches and the data bus through a set of transfers latches. The area used by the latch structure is reduced by sharing the transfer latches of the read and write circuitry between the data latches of multiple columns.

Abstract: A memory system includes a sense system configured to control parasitic noise sources by increasing selected bit line or channel voltages during sense stages. The increase may be tied to a triggering threshold voltage level. That is, while performing a memory operation, the sense system may increase the selected bit line voltage level dependent on a reference voltage level or memory state associated with a sense stage being above the triggering threshold level.

Abstract: A non-volatile memory system comprises a memory structure and a control circuit connected to the memory structure. The control circuit includes a programmable and reprogrammable microcontroller. The microcontroller has a first processor that executes instructions to coordinate sequences of voltages applied to the memory structure by a first circuit in order to perform memory operations. The microcontroller has a second processor that executes second instructions to control a second circuit to test conditions of the non-volatile memory cells in response to the voltages applied to the memory structure. The microcontroller may have a third processor that controls the flow of the memory operation and directs the first and second processors to execute the instructions. The instructions of the various processors may be updated, which provides for flexible flow, core operation control, and condition testing.

Abstract: A memory array is provided that includes a first memory level including a plane of first selector material, and a plurality of first memory cells each including a corresponding first magnetic memory element coupled in series with a corresponding first selector element. Each first selector element includes a region of the plane of first selector material.

Abstract: Systems and methods for power distribution are disclosed. A system includes a first power domain that supplies current to an integrated circuit at a first voltage level, a second power domain that supplies current to the integrated circuit at a second voltage level, and a current distribution component that is connected to the first power domain and connectable to the second power domain and senses a metric comprising a first current level or a first voltage level drawn from the first power domain, determines whether the metric exceeds a first threshold, and in response to determining that the metric exceeds the first threshold, electrically connects the second power domain to the integrated circuit to supply additional current such that an aggregate current level received by the integrated circuit comprises current from the first power domain and the additional current from the second power domain.

Abstract: Techniques are provided for optimizing an erase operation in a memory device to compensate for erase speed variations due to blocking oxide thinning In an erase operation for a block, the channels of NAND strings in different sub-blocks can be charged up by different amounts. One approach adjusts the control gate voltage of a first select gate transistor in a NAND string. This adjusts the amount of holes generated in the channel due to gate-induced drain leakage. Another approach adjusts the control gate voltage of additional select gate transistors in the NAND string to adjust the conductivity of the adjacent channel regions. Another approach applies different bit line voltages to different rows of NAND strings in each sub-block.

Abstract: Techniques are provided to reduce neighbor word line interference and charge loss in a multi-pass program operation. In one implementation, the first pass of a multi-pass program operation uses one or more program pulses without performing associated verify tests. The memory cells may be programmed to different intermediate threshold voltage (Vth) distributions in the first program pass. Different bit line voltages can be used to obtain the different intermediate Vth distributions when the single program pulse is applied. In other cases, multiple program pulses are applied without performing verify tests. The intermediate Vth distributions can be provided for the memory cells assigned to the higher data states but not the lower data states, or for memory cells assigned to both the higher and lower data states.

Abstract: In a non-volatile memory circuit, read and write performance is improved by increasing the transfer rate of data through the cache buffer during read and write operations. In an array structure where memory cells are connected along bit lines, and the bit lines organized into columns, pairs of data words are stored interleaved on the bit lines of a pair of columns. Data is transferred in and out of the read and write circuit on an internal bus structure, where part of the transfer of one word stored on a pair of columns can overlap with part of the transfer of another word, accelerating transfer times for both read and write.