Patents Assigned to Semtech Corporation
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Publication number: 20180088739Abstract: A proximity sensor has a sensing node. A radio frequency signal is received at the sensing node. The radio frequency signal is coupled to an intermediate node through a first capacitor. The radio frequency signal is coupled from the intermediate node to a ground node through a second capacitor. An RF amplifier is coupled to the sensing node. The radio frequency signal is generated using the RF amplifier. A third capacitor is coupled between the RF amplifier and the sensing node. An antenna is coupled to the sensing node. The radio frequency signal is transmitted using the antenna. A capacitance of the antenna is measured using the proximity sensor. The capacitance of the antenna is compared to a threshold to determine proximity of a conductive object. An inductor is coupled between the sensing node and the antenna. A shielding area is coupled to the intermediate node.Type: ApplicationFiled: November 20, 2017Publication date: March 29, 2018Applicant: Semtech CorporationInventors: Chaouki Rouaissia, Eric Pierre Claude Vandel
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Publication number: 20180068976Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.Type: ApplicationFiled: October 30, 2017Publication date: March 8, 2018Applicant: Semtech CorporationInventors: Satyamoorthi Chinnusamy, Kevin Simpson, Mark C. Costello
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Patent number: 9899285Abstract: A semiconductor device has a plurality of first semiconductor die. A plurality of first bumps is formed over the first semiconductor die. A first protection layer is formed over the first bumps. A portion of the first semiconductor die is removed in a backgrinding operation. A backside protection layer is formed over the first semiconductor die. An encapsulant is deposited over the first semiconductor die and first bumps. A portion of the encapsulant is removed to expose the first bumps. A conductive layer is formed over the first bumps and encapsulant. An insulating layer and plurality of second bumps are formed over the conductive layer. A plurality of conductive vias is formed through the encapsulant. A plurality of the semiconductor devices is stacked with the conductive vias electrically connecting the stacked semiconductor devices. A second semiconductor die having a through silicon via is disposed over the first semiconductor die.Type: GrantFiled: July 30, 2015Date of Patent: February 20, 2018Assignee: Semtech CorporationInventors: Kok Khoon Ho, Satyamoorthi Chinnusamy
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Patent number: 9897770Abstract: A novel, hybrid optical fiber stub device comprises a first ferrule transparent to UV light and a second ferrule including a conventional material. An optical fiber is disposed through the first ferrule and second ferrule. The input and output faces of the optical fiber are prepared suitable for optical coupling. A photonic device is coupled to the first optical fiber surface. A UV curable epoxy is disposed between the photonic device and the first optical fiber surface. The UV curable epoxy includes an index of refraction between an index of refraction of the first optical fiber and an index of refraction of the photonic device. A second optical fiber is coupled to the first optical fiber.Type: GrantFiled: December 14, 2016Date of Patent: February 20, 2018Assignee: Semtech CorporationInventors: Christopher A. Park, Nayla El Dahdah
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Publication number: 20180047688Abstract: A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.Type: ApplicationFiled: August 4, 2017Publication date: February 15, 2018Applicant: Semtech CorporationInventors: Kok Khoon Ho, Jonathan Clark, John MacLeod
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Semiconductor device and method of forming DCALGA package using semiconductor die with micro pillars
Patent number: 9875988Abstract: A semiconductor device has a first semiconductor die disposed over a substrate. A plurality of composite interconnect structures are formed over the semiconductor die. The composite interconnect structures have a non-fusible conductive pillar and a fusible layer formed over the non-fusible conductive pillar. The fusible layer is reflowed to connect the first semiconductor die to a conductive layer of the substrate. The non-fusible conductive pillar does not melt during reflow eliminating a need to form a solder resist over the substrate. An encapsulant is deposited around the first semiconductor die and composite interconnect structures. The encapsulant flows between the active surface of the first semiconductor die and the substrate. A second semiconductor die is disposed over the substrate adjacent to the first semiconductor die. A heat spreader is disposed over the first semiconductor die. A portion of the encapsulant is removed to expose the heat spreader.Type: GrantFiled: October 29, 2015Date of Patent: January 23, 2018Assignee: Semtech CorporationInventors: Satyamoorthi Chinnusamy, Weng Hing Tan, Andrew Pan, Kok Khoon Ho -
Publication number: 20180019194Abstract: A semiconductor device has an interposer and a surface mount technology (SMT) component disposed on the interposer. The interposer is disposed on an active surface of a semiconductor die. The semiconductor die is disposed on a substrate. A first wire bond connection is formed between the interposer and semiconductor die. A second wire bond connection is formed between the interposer and substrate. A third wire bond connection is formed between the substrate and semiconductor die. An encapsulant is deposited over the substrate, semiconductor die, interposer, and SMT component. In one embodiment, the substrate is a quad flat non-leaded substrate. In another embodiment, the substrate is a land-grid array substrate, ball-grid array substrate, or leadframe.Type: ApplicationFiled: July 12, 2017Publication date: January 18, 2018Applicant: Semtech CorporationInventor: Jean-Marc Papillon
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Patent number: 9864464Abstract: A proximity sensor has a sensing node. A radio frequency signal is received at the sensing node. The radio frequency signal is coupled to an intermediate node through a first capacitor. The radio frequency signal is coupled from the intermediate node to a ground node through a second capacitor. An RF amplifier is coupled to the sensing node. The radio frequency signal is generated using the RF amplifier. A third capacitor is coupled between the RF amplifier and the sensing node. An antenna is coupled to the sensing node. The radio frequency signal is transmitted using the antenna. A capacitance of the antenna is measured using the proximity sensor. The capacitance of the antenna is compared to a threshold to determine proximity of a conductive object. An inductor is coupled between the sensing node and the antenna. A shielding area is coupled to the intermediate node.Type: GrantFiled: October 31, 2014Date of Patent: January 9, 2018Assignee: Semtech CorporationInventors: Chaouki Rouaissia, Eric Vandel
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Patent number: 9837375Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.Type: GrantFiled: February 26, 2016Date of Patent: December 5, 2017Assignee: Semtech CorporationInventors: Satyamoorthi Chinnusamy, Kevin Simpson, Mark C. Costello
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Patent number: 9800288Abstract: A wireless communication method in a network comprising one or several beacons and a plurality of end-points, comprising: sending by a beacon a timing message modulated according to a chirp spread spectrum format, receiving said timing message in one or several end-nodes a receiver, detecting said timing message aligning a local frequency reference and/or time reference of the end-node to the time reference of the transmitter by means of said timing message.Type: GrantFiled: March 2, 2016Date of Patent: October 24, 2017Assignee: Semtech CorporationInventors: Olivier Bernard Andre Seller, Nicolas Sornin
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Patent number: 9794748Abstract: A proximity sensor for detecting proximity of a body portion in a first region while avoiding unwanted detection of a body portion in a second region, based on the capacities seen by a plurality of electrodes. An application of the inventive detector to a mobile phone, whereby the display is switched off, or various energy saving measure are taken, when the proximity sensor determines directional proximity with a body part, indicating that the user has brought the phone to the ear for placing a call.Type: GrantFiled: August 12, 2015Date of Patent: October 17, 2017Assignee: Semtech CorporationInventors: Chaouki Rouaissia, Sebastien Grisot
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Patent number: 9794095Abstract: A gateway device having a baseband processor for processing a plurality signals carrying a digital information modulated in the form of chirp signal, the chirp signals being either base chirps, for which the frequency changes from an initial instant to a final instant according to a predetermined base chirp function or modulated chirps, whose instantaneous frequencies vary according to one of a plurality of a functions that differ from said base chirp function, characterized in that the gateway device is arranged for simultaneously demodulating a plurality of signals having received at a same frequency and exhibiting different bitrates.Type: GrantFiled: June 30, 2015Date of Patent: October 17, 2017Assignee: Semtech CorporationInventors: Nicolas Sornin, Ludovic Champion
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Patent number: 9766751Abstract: A readout system for capacitive touch panel, particularly for single-ended capacity sensing matrixes, capable of internally calibrate and equalize the response of its capacity-to-digital converters (CDC). The readout system includes reference lines for interconnecting together different sub-circuits, and measuring the response of CDC in different circuits on common reference capacitors.Type: GrantFiled: January 26, 2015Date of Patent: September 19, 2017Assignee: Semtech CorporationInventors: Olivier Nys, Pascal Monney
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Publication number: 20170250172Abstract: A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.Type: ApplicationFiled: February 13, 2017Publication date: August 31, 2017Applicant: Semtech CorporationInventors: Changjun Huang, Jonathan Clark
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Publication number: 20170250158Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.Type: ApplicationFiled: February 26, 2016Publication date: August 31, 2017Applicant: Semtech CorporationInventors: Satyamoorthi Chinnusamy, Kevin Simpson, Mark C. Costello
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Patent number: 9749012Abstract: A method and a device are disclosed including a PLC node having a synchronizer, a modem with a transceiver, and a computing device coupled with a power line for power line data communications. In various embodiments, a coordinator or Data Concentrator Unit (DCU) coordinates the communication of PLC nodes. The PLC nodes are configured to detect a zero crossing of the power line wave form and transmit or receive data within time slots defined with respect to the detected zero crossing. In other embodiments, the time slots may be synchronized using a frame sync signal, an external signal, or polling. In various embodiments, the time slots may be random access or assigned. In some embodiments, the modem and/or node may be placed in a sleep mode when not communicating to reduce power consumption and be awaken when an allocated time slot is approaching.Type: GrantFiled: March 14, 2014Date of Patent: August 29, 2017Assignee: SEMTECH CORPORATIONInventors: Farrokh Farrokhi, Michael Anburaj
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Publication number: 20170236790Abstract: A semiconductor device includes a substrate and a first conductive layer formed over a first surface of the substrate. The first conductive layer is patterned into a first portion of a first passive circuit element. The first conductive layer is patterned to include a first coiled portion. A second conductive layer is formed over a second surface of the substrate. The second conductive layer is patterned into a second portion of the first passive circuit element. The second conductive layer is patterned to include a second coiled portion exhibiting mutual inductance with the first coiled portion. A conductive via formed through the substrate is coupled between the first conductive layer and second conductive layer. A semiconductor component is disposed over the substrate and electrically coupled to the first passive circuit element. An encapsulant is deposited over the semiconductor component and substrate. The substrate is mounted to a printed circuit board.Type: ApplicationFiled: February 12, 2016Publication date: August 17, 2017Applicant: Semtech CorporationInventors: Satyamoorthi Chinnusamy, Weng Hing Tan, Jayson Nathaniel S. Reyes
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Patent number: 9727118Abstract: A measuring circuit connectable to a capacitive touch-sensitive panel, the panel including a plurality of sense electrodes and optionally a common guard electrode, adapted to measure variations in the instantaneous electric capacity of the sense electrodes in response to proximity to conductive bodies, wherein the sense electrodes are biased at a fixed voltage relative to the common guard electrode, the measuring circuit comprising: a power management integrated circuit comprising a voltage source generating a modulation voltage that is available at a guard terminal of the power management integrated circuit that is in electric connection with the guard electrode; one or more slave integrated circuits, each connected to a plurality of sense electrodes and comprising a Capacity-to-Digital converter or a plurality of Capacity-to-Digital converters that are operatively arranged for generating digital measure codes representing the instantaneous electric capacity of sense electrodes; a means for varying the frequType: GrantFiled: June 30, 2015Date of Patent: August 8, 2017Assignee: Semtech CorporationInventors: Olivier Nys, Pascal Monney, Mathieu Hoffmann
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Publication number: 20170187423Abstract: A mobile device includes a conductive element and a ground node. The conductive element is configured to be detected by a proximity sensor. A switch is coupled between the conductive element and ground node. The conductive element is coupled to the ground node by closing the switch. A first memory element is configured to control the switch. The first memory element includes a register bit coupled to a control terminal of the switch. A data output is configured to control the switch. A FIFO is configured to provide data to the data output. The first memory element includes a FIFO. A capacitive touch controller is configured to measure a capacitance of the conductive element. A digital processing unit is configured to convert the capacitance of the conductive element to a bit of data. A second memory element is configured to store the bit of data.Type: ApplicationFiled: March 13, 2017Publication date: June 29, 2017Applicant: Semtech CorporationInventor: Chaouki Rouaissia
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Patent number: 9692364Abstract: Examples are provided for a multi-stage track-and-hold circuit (THA). The multi-stage THA may include a first stage, a second stage, and a third stage. The first stage may be coupled to an input signal and configured to sample the input signal. The second stage may be coupled to the first stage and may include a buffer circuit. The third stage may be coupled to the second stage and can include a bootstrapped THA. The first stage may further include a shunted source-follower circuit and a switched source-follower circuit. The shunted source-follower circuit may include a first switch that can be operable to couple an output node of the shunted source-follower circuit to ground potential.Type: GrantFiled: April 6, 2016Date of Patent: June 27, 2017Assignee: SEMTECH CORPORATIONInventors: Sandeep Louis D'Souza, Kenneth Colin Dyer, Raghava Manas Bachu