Patents Assigned to Sensor Electronics Technology, Inc.
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Publication number: 20170104132Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.Type: ApplicationFiled: December 28, 2016Publication date: April 13, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Michael Shur
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Publication number: 20170100496Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.Type: ApplicationFiled: December 22, 2016Publication date: April 13, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Alexander Dobrinsky, Remigijus Gaska
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Publication number: 20170101328Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.Type: ApplicationFiled: December 22, 2016Publication date: April 13, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Saulius Smetona, Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170098539Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.Type: ApplicationFiled: October 3, 2016Publication date: April 6, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Mikhail Gaevski, Igor Agafonov, Robert M. Kennedy, Alexander Dobrinsky, Michael Shur, Emmanuel Lakios
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Publication number: 20170098731Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.Type: ApplicationFiled: December 21, 2016Publication date: April 6, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170097466Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.Type: ApplicationFiled: December 21, 2016Publication date: April 6, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Publication number: 20170095582Abstract: An optoelectronic device module with improved light emission of approximately 4? steradians is provided. In one embodiment, the optoelectronic device module includes a first and a second set of optoelectronic devices. Each optoelectronic device includes a first contact and a second contact. A contact element including a first lateral side and a second lateral side connects the optoelectronic devices. The first contact of each optoelectronic device in the first set of optoelectronic devices is connected to the first lateral side of the contact element and the first contact of each optoelectronic device in the second set of optoelectronic devices is connected to the second lateral side of the contact element.Type: ApplicationFiled: October 3, 2016Publication date: April 6, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Emmanuel Lakios
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Publication number: 20170095585Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.Type: ApplicationFiled: December 21, 2016Publication date: April 6, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Saulius Smetona, Alexander Dobrinsky, Yuri Bilenko, Michael Shur
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Publication number: 20170098739Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. A n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second n-type metallic contact layer can be located over a second portion of the n-type contact region, where the second n-type metallic contact layer is formed of a reflective metallic material.Type: ApplicationFiled: October 3, 2016Publication date: April 6, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
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Patent number: 9603960Abstract: A device including a flexible substrate and an ultraviolet radiation system is disclosed. The ultraviolet radiation system can include at least one ultraviolet radiation source configured to emit ultraviolet radiation towards a surface to be disinfected, an ultraviolet transparent component configured to focus the ultraviolet radiation, and a control system configured to control the at least one ultraviolet radiation source. The device can include a hand article, such as a glove.Type: GrantFiled: October 28, 2015Date of Patent: March 28, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9601611Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.Type: GrantFiled: July 17, 2014Date of Patent: March 21, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Mikhail Gaevski, Michael Shur, Remigijus Gaska
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Publication number: 20170077085Abstract: A solid-state light source (SSLS) with an integrated short-circuit protection approach is described. A device can include a SSLS having an n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A field-effect transistor (FET) can be monolithically connected in series with the SSLS. The FET can have a saturation current that is greater than the normal operating current of the SSLS and less than a predetermined protection current threshold specified to protect the SSLS and the FET.Type: ApplicationFiled: September 13, 2016Publication date: March 16, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Michael Shur
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Publication number: 20170077278Abstract: A semiconductor device including a device channel with a gate-drain region having a carrier concentration that varies laterally along a direction from the gate contact to the drain contact is provided. Lateral variation of the carrier concentration can be implemented by laterally varying one or more attributes of one or more layers located in the gate-drain region of the device.Type: ApplicationFiled: September 13, 2016Publication date: March 16, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Michael Shur, Alexander Dobrinsky
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Publication number: 20170079102Abstract: A solid-state light source (SSLS) with light modulation control is described. A SSLS device can include a main p-n junction region configured for recombination of electron-hole pairs for light emission. A supplementary p-n junction region is proximate the main p-n junction region to supplement the recombination of electron-hole pairs, wherein the supplementary p-n junction region has a smaller electron-hole life time than the electron-hole life time of the main p-n junction region. The main p-n junction region and the supplementary p-n junction region operate cooperatively in a light emission state and a light turn-off-state. In one embodiment, the recombination of electron-hole pairs occurs in the main p-n junction region during a light emission state, and the recombination of electron-hole pairs occurs in the supplementary p-n junction region light during the light turn off-state.Type: ApplicationFiled: September 13, 2016Publication date: March 16, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Michael Shur
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Patent number: 9595636Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.Type: GrantFiled: March 28, 2013Date of Patent: March 14, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S Shatalov, Jianyu Deng, Alexander Dobrinsky, Xuhong Hu, Remigijus Gaska, Michael Shur
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Patent number: 9595634Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.Type: GrantFiled: July 1, 2016Date of Patent: March 14, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
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Publication number: 20170057842Abstract: A fluid treatment system and method of treating fluid is described. The fluid treatment system can include a fluid transparency meter, which acquires data corresponding to an ultraviolet transparency of the fluid and a disinfection chamber within which a set of ultraviolet sources emit ultraviolet light onto the fluid located therein. The treatment system can include various features for mixing the fluid and/or recirculating the fluid for multiple ultraviolet light doses. A control system can manage a flow of the fluid through the fluid treatment system based on a disinfection dose delivered to the fluid.Type: ApplicationFiled: September 1, 2016Publication date: March 2, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur
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Publication number: 20170062657Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.Type: ApplicationFiled: May 9, 2016Publication date: March 2, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Patent number: 9572903Abstract: A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. The object can comprise a protective suit, which is worn by a user and also can include ultraviolet sources for disinfecting air prior to the air entering the protective suit. The system can be implemented as a multi-tiered system for protecting the user and others from exposure to the contaminant and sterilizing the protective suit after exposure to an environment including the contaminant.Type: GrantFiled: October 15, 2015Date of Patent: February 21, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska, Timothy James Bettles
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Publication number: 20170047438Abstract: A normally-off transistor with a high operating voltage is provided. The transistor can include a barrier above the channel and an additional barrier layer located below the channel. A source electrode and a drain electrode are connected to the channel and a gate electrode is connected to the additional barrier layer located below the channel. The bandgap for each of the barrier layers can be larger than the bandgap for the channel. A polarization charge induced at the interface between the additional barrier layer below the channel and the channel depletes the channel. A voltage can be applied to the bottom barrier to induce free carriers into the channel and turn the channel on.Type: ApplicationFiled: August 11, 2016Publication date: February 16, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Michael Shur