Abstract: A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of Sc100-x-y-zGexSbyTez, wherein 0?x?60, 0?y?90, 0<z?65, 0<100-x-y-z<100. The phase change material for a phase change memory according to the present invention is capable of repeatedly changing phases. The Sc100-x-y-zGexSbyTez has two different resistance value states, i.e., a high resistance state and a low resistance state, and a reversible transformation between the high resistance state and the low resistance state can be achieved by being applied a pulse electrical signal thereto, which satisfies basic requirements of a storage material for the phase change memory.

Abstract: A phase change memory cell and a preparation method thereof. A phase change material layer having a thickness equal to the size of a single unit cell or a plurality of unit cells is adopted, the phase change material layer fundamentally expresses interfacial characteristics, and body material characteristics are weakened, such that a two-dimensional phase change memory cell storing information through change of interface resistance and having a high density, low power consumption and high speed is prepared.

Abstract: A calibration method for an absolute responsivity of a terahertz quantum well detector and a calibration device thereof, in which the device at least comprises: a driving power supply, a single frequency laser source, an optic, a terahertz array detector, a terahertz dynamometer, a current amplifier and an oscilloscope. The calibration method adopts a power detectable single frequency laser source as a calibration photosource, to obtain the absolute responsivity parameters of the detector at the laser frequency; a normalized photocurrent spectrum of the detector is used to further calculate the absolute responsivity parameters of the detector at any detectable frequency. the single frequency laser source with periodically output is adopted as a calibration photosource, the terahertz array detector and the dynamometer are adopted to directly measure and obtain the incident power of the calibrated detector.

Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

Abstract: A read circuit of storage class memory comprises: an array; a read reference circuit, having the same bit line parasitic parameters as the array, having the same read transmission gate parasitic parameters as the array, used to generate a read reference current; a sense amplifier, providing the same current mirror parasitic parameters as the reference side, used to generate a read current from a selected memory cell, compare the said read current with the said read reference current and output a readout result. In the present invention, the said read current and the said read reference current are generated at the same time, the transient curve of the said read reference current is between the low resistance state read current and the high resistance state read current from an early stage. The present invention largely reduces the read access time, has a good process variation tolerance, has a wide application, and is easy to be used in the practical product.

Abstract: A wireless sensor network architecture based on multifunctional and compound sensors comprises several sensing modules including a plurality of first sensor nodes and a second sensor node. The first sensor nodes are used for collecting a target signal after sensing that a moving target enters a detection area, extracting feature information of the moving target, analyzing the feature information of the moving target to form primary target information, and transmitting the primary target information to the second sensor node, The second sensor node performs moving target matching and association on the primary target information of the moving target that is transmitted by the plurality of first sensor nodes, collects the associated primary target information to form secondary target information.

Abstract: A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.

Abstract: The present invention provides a modeling method of a SPICE model series of a Silicon On Insulator (SOI) Field Effect Transistor (FET), where auxiliary devices are designed and fabricated, electrical property data is measured, intermediate data is obtained, model parameters are extracted based on the intermediate data, a SPICE model of an SOI FET of a floating structure is established, model parameters are extracted by using the intermediate data and data of the auxiliary devices, a macro model is complied, and a SPICE model of an SOI FET of a body leading-out structure is established.

Abstract: An undulator comprises at least M permanent magnet periods arranged sequentially in a transmission direction of electron beams, each of the permanent magnet periods comprises four rows of permanent magnet structures, in which each row comprises N rows of permanent magnet groups, and each row of the permanent magnet groups comprises K permanent magnet units, wherein M, N and K are natural numbers greater than or equal to 1; the four rows of the permanent magnet structures are pairwise matched, then relatively disposed on both sides of the transmission direction of electron beams, and are capable of forming at least one composite magnetic fields by relative displacement, such that elliptically polarized light, circularly polarized light, or linearly polarized light with an arbitrary polarization angle of 0°˜360° is generated when electron beams pass through the composite magnetic fields, and such that velocity directions of electrons are deviated from an axis direction of the undulator.

Abstract: The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template laye

Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

Abstract: The present disclosure provides a method for preparing an aluminum oxide polishing solution. The methods include: 1) mixing a silane coupling agent, ethyl alcohol, and water to form a hydrolysate; 2) under a condition of heating and stirring at a temperature between 95° C. and 110° C., adding the hydrolysate into aluminum oxide powder; keeping stirring while heating till liquid is completely volatilized, thereby obtaining a modified aluminum oxide; 3) grinding the modified aluminum oxide into powder and dispersing the powder into water; adjusting solution pH to 9.5-10.5, thereby obtaining the aluminum oxide polishing solution. It may achieve a polishing efficiency of pH=13.00 by using the aluminum oxide polishing solution of the present disclosure; meanwhile, less scratches will occur to a polishing disc.

Abstract: The present disclosure provides a polydispersion large-particle-size silica sol and a method of preparing the same. The polydispersion large-particle-size silica sol is mainly used as a polishing solution to enhance a polishing rate. The preparing method prepares the silica sol by stirring and heating a monodisperse spherical silica sol with a particle size of 20 nm-30 nm which is taken as a seed crystal, and meanwhile constantly adding, by drops, the seed crystal of the monodisperse spherical silica sol with a particle size of 20 nm-30 nm and active silicic acid into a reaction system, wherein during the whole reaction process, a heating concentration method is adopted to maintain a constant liquid level and during this period, inorganic dilute alkali solution is added by drops to maintain the pH value of the system between 9.5 and 10.5; cooling is performed after heat preservation.

Abstract: The invention provides a sulfur doping method for graphene, which comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050° C.; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The present invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly.

Abstract: A nano-scale superconducting quantum interference device and a manufacturing method thereof, comprising the following steps of: S1: providing a substrate and growing a first superconducting material layer thereon; S2: forming a photo-resist layer and performing patterning; S3: etching the first superconducting material layer in a predetermined region; S4: covering a layer of insulation material on a top and a side of a structure obtained in step S3; S5: growing a second superconducting material layer; S6: removing the structure above the plane where the upper surface of the first superconducting material layer locates, to obtain a plane superconducting structure, in the middle of which at least one insulating interlayer is inserted; S7: forming at least one nanowire vertical to the insulating interlayer, to obtain the nano-scale superconducting quantum interference device. The width of the superconducting ring and the length of the nano junction are determined by the insulating interlayer.

Abstract: Provided is an image type electron spin polarimeter. It at least comprises a scattering target, a two-dimensional electron detector and an electron bending unit, wherein the electron bending unit is used for bending the orbit of the incident (scattered) electrons to a first (second) angle to arrive the scattering target (two-dimensional electron detector) with an optimal incident angle, and to transfer the image of the electron intensities from the entrance plane (scattering target) to the scattering target (two-dimensional electron detector) with small aberrations, and to separate the orbits of incident and scattered electrons to increase the degree of freedom of the geometric configuration of each component of the spin polarimeter.

Abstract: The present disclosure relates to the field of preparing an inorganic nanometer material and application thereof, and specifically relates to a film-forming silica sol, a method of preparing the silica sol, and usage thereof. The present disclosure provides a film-forming silica sol comprising, by weight percentage, constituents of: silica sol: 66-91%; modifying agent: 0.1-1.8%; film-forming auxiliary: 7.2-33.9%. The present disclosure further provides a method of preparing a film-forming silica sol and an application thereof. With the film-forming silica sol, a method of preparing the silica sol, and usage thereof according to the present disclosure, the prepared film-forming silica sol has a good appearance transparency and stability, and when applied to paint as a film-forming coating, it has a good glossiness, a high hardness, and a strong adhesive force; therefore, it has a high practical value in the paint field.

Abstract: A magnetic sensor for superconducting quantum interference device using single operational amplifier comprising SQUID, a feedback coil, feedback resistor and an operational amplifier. The voltage signal of SQUID is delivered to one input of the operational amplifier, a bias voltage is delivered to other input of the operational amplifier, and the output of the operational amplifier connects to one end of a feedback resistor, the other end of the feedback resistor connects to a feedback, coil that is coupled through mutual inductance with the SQUID so as to generate feedback magnetic flux, the output voltage of the operational amplifier drives the feedback resistance to generate current, thereby forming a flux locking loop. The present Invention uses an open loop operational amplifier to implement SQUID magnetic flux locking feedback circuit which simplifies the circuit configuration, decrease the loop delay and thereby achieving higher bandwidth of the flux locking loop.

Abstract: A method for designing an ultrahigh-resolution photonic-crystal superprism, including the following steps: selecting a medium material, and determining a structure type and parameter of a photonic crystal, obtaining the photonic crystal's equifrequency graph, and looking for an auto-collimation area; obtaining the group velocity distribution of points in the equifrequency graph, and looking for a low group velocity area; optimizing the photonic crystal's structure parameter, facilitating the auto-collimation and the low group velocity area in the photonic crystal's equifrequency graph to be overlapped as much as possible, and defining overlapping area as a work area; obtaining an equal incidence-angle line, rotating the photonic crystal to intersect the equal incidence-angle line with the work area, and selecting the appropriate incidence angle in an intersection point to complete the design of the photonic-crystal superprism.