Abstract: A tag (1) can be split into a tag (A(1-a)), a tag (B(1-b)), and a tag (C(1-c)). In the tag (A), a memory portion (A31) is included. In the tag (B), a memory portion (B32) is included. In the tag (C), a memory portion (C33), an input/output interface portion (34), and a control portion (35) are provided. The input/output interface portion (34) forms an interface for exchanging data with an external reader/writer device (not shown). The control portion (35) receives a request inputted thereto from the input/output interface portion (34) and controls the function of the tag. A split line 36 is provided between the tags (A) and (B) to allow detachment between the two tags therealong. A split line 37 is provided between the tags (B) and (C) to allow detachment between the two tags therealong. The arrangement makes it difficult to falsify data in the tag and enables an easier operation.

Abstract: An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.

Abstract: A transferring and fixing apparatus includes a transferring and fixing member and a pressure member in close and pressing contact with each other, forming a transferring and fixing region therebetween. A fused toner image held and heated by the transferring and fixing member is transferred and fixed into in the transferring and fixing region onto a recording paper fed to the transferring and fixing region, an end portion of the transferring and fixing region where the recording paper is fed is set to have a highest pressure in the transferring and fixing region. With this arrangement the present invention prevents micro offset phenomenon in a transferring and fixing process of toner into a recording paper in a simultaneous transferring and fixing mode, thereby achieving high picture quality.

Abstract: A parallax optic comprises plural, spaced apart lenses which are separated by regions which are non-transmissive of/to visible light. In some embodiments, the spaced apart lenses of the parallax optic are discrete elements of a lens array. In other embodiments, the lens elements are formed as convex elements integral with and extending from a lenticular layer. Parallax optic devices are combined with one or more image display elements to form an image display device. For embodiments of image display devices featuring or providing two-dimensional (2D) viewability, the parallax optic is preferably near or included in the image display element. On the other hand, for embodiments of image display devices featuring or providing three-dimensional (3D) viewability, the parallax optic is situated outside the image display element.

Abstract: The disclosure is directed to a method for purifying metals, which can very efficiently and inexpensively eliminate impurity elements included in various metallic or semiconductor materials, or more specifically included in metallurgical grade silicon.

Abstract: A multifunction device achieves a device function by appropriately combining plural elemental functions including a scanning function, a printing function, and a communication function. The multifunction device includes: a service layer for executing the plural elemental functions; an API table storage section which stores an API table in which a first API for executing the device function is associated with a second API that the service layer can receive; and an Open I/F layer which receives the first API, specifies, in the API table, the second API corresponding to the first API, and outputs the specified second API to the service layer. With this arrangement, it is possible to provide a multifunction device which allows new control from a control device to the multifunction device to be easily developed.

Abstract: Methods of covalently-stabilizing alpha-helical, chimeric peptides constrained within a homotrimeric or heterotrimeric coiled-coil structure are disclosed. The coiled-coil structures made by the methods disclosed within this specification mimic all or a portion of the internal, trimeric coiled-coil motif contained within the fusogenic conformation of an enveloped virus membrane-fusion protein, particularly the internal coiled-coil domain of the HIV gp41 ectodomain. The HIV-derived, chimeric peptides disclosed comprise a non-HIV, soluble, trimeric form of a coiled-coil fused in helical phase to all or a portion of the N-helix of HIV gp41 and are covalently-stabilized in a homotrimeric or heterotrimeric coiled-coil structure through the formation of disulfide or chemoselective bonds between said peptides.

Abstract: A method of fabricating a low, dark-current germanium-on-silicon PIN photo detector includes preparing a P-type silicon wafer; implanting the P-type silicon wafer with boron ions; activating the boron ions to form a P+ region on the silicon wafer; forming a boron-doped germanium layer on the P+ silicon surface; depositing an intrinsic germanium layer on the boron-doped germanium layer; cyclic annealing, including a relatively high temperature first anneal step and a relatively low temperature second anneal step; repeating the first and second anneal steps for about twenty cycles, thereby forcing crystal defects to the P+ germanium layer; implanting ions in the surface of germanium layer to form an N+ germanium surface layer and a PIN diode; activating the N+ germanium surface layer by thermal anneal; and completing device according to known techniques to form a low dark-current germanium-on-silicon PIN photodetector.

Abstract: A driving device includes (i) a switching circuit, which carries out precharging by (a) separating an outputting circuit from source signal lines, and (b) short-circuiting at least one source signal line whose source signal potential is positive in a certain horizontal period and at least one source signal line whose source signal potential is negative in the certain horizontal period and (ii) a pulse width adjusting circuit which adjusts timings. Therefore, it is possible to carry out a charge sharing without additionally providing an external memory capacitor. On this account, even when a newly designed display section (liquid crystal panel, etc.), which is different in the number of pixels and materials from a conventional display section, is used, it is possible to realize a display device and a driving device which do not require the change in the arrangement of the controller.

Abstract: A photosensitizing transition metal complex of the formula (Ia) MLY1, (Ib) MLX3 (Ic) MLY2X, (Id) MLY3X or (Ie) MLY4X in which M is a transition metal selected from ruthenium, osmium, iron, rhenium and technetium, preferably ruthenium or osmium. X is a co-ligand independently selected from NCS—, Cl—, Br—, I—, CN—, H2O; pyridine unsubstituted or substituted by at least one group selected from vinyl, primary, secondary or tertiary amine, OH and C1-30 alkyl, preferably NSC and CN—; L is a tridentate polypyridine ligand, carrying at least one carboxylic, phosphoric acid or a chelating group and one substituted or unsubstituted alkyl group having 1 to 50 carbon atoms, substituted or unsubstituted alkylamide group having 2 to 30 carbon atoms or substituted or unsubstituted aralkyl group having 7 to 50 carbon atoms.

Abstract: The present invention is directed to novel substituted aminotetrahydropyrans of structural formula I which are inhibitors of the dipeptidyl peptidase-IV enzyme and which are useful in the treatment or prevention of diseases in which the dipeptidyl peptidase-IV enzyme is involved, such as diabetes and particularly Type 2 diabetes. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which the dipeptidyl peptidase-IV enzyme is involved.

Abstract: The present invention relates to a driving unit capable of implementing a long stroke drive while achieving height reduction of the driving unit. The driving unit is provided with a driving mechanism for driving a driven body. The driving mechanism includes: a bendable displaceable member that is fixated at one end and, through electric control, bent and displaced at the other end; a driving direction-changing member changing a direction of the bending and displacement of the bendable displaceable member to a driving direction of the driven body, the driving direction of the driven body being perpendicular to the direction of the bendable displaceable member; a contact member frictionally engaged with the driving direction-changing member and driving the driven body; and a precompression member mounted in the driven body and precompressing the contact member towards the driving direction-changing member.

Abstract: A semiconductor light emitting device has an outer lead disposed along an outer wall of a mold resin portion perpendicular to a light-emitting plane of a light emitting diode. An outer lead is also disposed at an outer wall of the mold resin portion parallel to and opposite to the light-emitting plane. The outer wall of the resin mold where the outer lead is disposed is taken as a mount face. Each outer wall of the mold resin portion constituting a mount face includes at least one outer lead for an anode and a cathode. According to the present configuration, there is provided a semiconductor light emitting device that allows selection of side-emission mounting or top-emission mounting with the same components on a mount substrate.

Abstract: A storage area where compressed data is stored is divided into a plurality of divided areas having a data length of Ls. Each divided area is divided into two areas, a first area having a data length of Ld and a second area having a data length of La. A plurality of first areas are gathered starting from the upper address to the lower address, whereby a memory area for compressed image data is composed. A plurality of second areas are gathered starting from the upper address to the lower address, whereby a memory area for compressed attribute data is composed. Compressed image data is sequentially written starting from the upper address to the lower address of the memory area for compressed image data. Compressed attribute data is sequentially written starting from the upper address to the lower address of the memory area for compressed attribute data.

Abstract: The present invention realizes a display device with dummy pixel portions and a frame region required for the dummy pixel portions and code notation, in which the frame region is minimized while achieving code notation in required size. In a dummy pixel portion (122) of the present display device, the number of gate electrodes in a thin film transistor formed by a semiconductor layer (11) is reduced to two, so that distances from a contact hole (12) to another contact hole (13) and to a through-hole (14) can be shortened as compared to those in pixel formation portions (112a, 112b), making it possible to dispose the contact hole (13) and the through-hole (14) in a lower portion in the figure. In addition, provided in the vicinity of the center of the dummy pixel portion (122) is only an electrode equivalent to a storage capacitance line (170). Thus, a wide transparent region can be ensured to note a code (22) of a sufficient size in the dummy pixel portion (122).

Abstract: A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.

Abstract: A control unit of an image forming apparatus executes a program including the steps of: calculating a hash value based on image data received from an image processing terminal; if the same image has already been printed by a user of the same group, giving a notice to that effect to the user who requested printing; if request to continue printing is nevertheless issued, printing the image data; updating hash log information of itself if the same image has not been printed; and establishing synchronization of hash log information with other image forming apparatus or apparatuses.

Abstract: A nitride semiconductor light emitting diode includes at least an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. The active layer is formed of one first nitride semiconductor layer having a highest In ratio in the light emitting diode. The light emitting diode further includes at least one of a second nitride semiconductor layer located between the active layer and the n-type nitride semiconductor layer and including an InGaN layer, and a third nitride semiconductor layer located between the active layer and the p-type nitride semiconductor layer and including an InGaN layer. Respective In (Indium) ratios of the InGaN layers included in the second nitride semiconductor layer and the InGaN layers included in the third nitride semiconductor layer are lower than the In ratio of the first nitride semiconductor layer forming the active layer. The LED with high luminous efficiency can thus be provided.

Abstract: A droplet applying device (2) includes: application heads (2d) configured to eject an application liquid as multiple droplets toward to-be-coated subjects (K1, K2); a moving mechanism (2c) configured to move each of the to-be-coated subjects (K1, K2) and the application heads (2d) relative to each other; and a rotating mechanism (2b) configured to rotate the to-be-coated subjects (K1, K2) in a plane intersecting with an ejecting direction in which the multiple droplets are ejected.

Abstract: This invention allows super-resolution reproduction with which a better bER value is attainable, when information is recorded by a random pattern including a mark length not longer than a resolution limit, by use of a highly versatile signal decoding method. Information is recorded as marks and spaces coded by RLL(1,7) modulation, which each of the marks and spaces have one of, a plurality of lengths, and 2T marks and 2T spaces of the marks and spaces being formed are shorter than 0.12 ?m. An information recording layer (20) includes a reproduction film (21) and a reflective film (22) which are provided in this order from a side from which reproducing light is incident, which reproduction film is made of (i) zinc oxide, (ii) strontium titanate, (iii) titanium oxide, (iv) cerium oxide, or (v) a material including at least one of the (i) through (iv), and which reflective film is made of tantalum or titanium.