Abstract: An optical system provides high-contrast operation by collecting zero order light. The optical system comprises a light modulator and a collector. The light modulator is preferably a grating light valve™ light modulator including a plurality of elements selectively operable in a first mode and a second mode, wherein a gap between adjacent elements is equal to or less than a wavelength of an incident light beam. The plurality of elements in the first mode reflect light along a return path, where the plurality of elements in the second mode direct light away from the return path. The collector is coupled to the light modulator to collect zero order light along the return path while the plurality of elements are in the first mode and to collect zero order light along the return path while the plurality of elements are in the second mode.

Abstract: A device comprising movable micro-structures configured to contact a substrate is disclosed. The substrate has a metal-insulator-metal construction with an upper metal layer and an insulator being patterned to provide substrate contact regions to a lower metal layer. The micro-structures have metal under layers for providing ribbon contact regions and non-contact regions. In use, a bias voltage is applied across the micro-structures and the top metal layer of the substrate causing the micro-structures and the substrate to contact through the contact regions. During contact, the contact regions are maintained at a potential that is substantially less than the applied bias voltage, thereby reducing the formation of asperities and/or sticking between contacting parts. The micro-structures are preferably ribbon structures in an optical MEM device configured to modulate light.

Abstract: In one embodiment, lithium oxide concentration in wafers is adjusted by placing the wafers in a vessel. Vapor of a lithium oxide source is provided and absorbed by the wafers, thereby adjusting the lithium oxide concentration in the wafers. In another embodiment, a two-phase lithium-rich source is placed between wafers such that space in the process chamber is efficiently utilized. In another embodiment, the wafers to be processed are placed in a section of a process chamber (e.g., process tube). Lithium oxide is introduced on end of the process chamber. Carrier gas is also introduced on that end of the process chamber to carry the lithium oxide into the section of the process chamber where the wafers are located. By adjusting the partial pressure of lithium oxide in the process chamber, the rate at which lithium oxide is absorbed by the wafers is controlled.

Abstract: A modulator for modulating an incident beam of light. The modulator includes a plurality of elements, each element including a first end, a second end, a first linear side, a second linear side, and a continuous or non-continuous light reflective planar surface plurality of elements are arranged parallel to each other and further wherein the light reflective planar surface of each of the plurality of elements includes a first non-linear side and a second non-linear side. The modulator also includes a support structure coupled to each end of the plurality of elements to enable movement between a first modulator configuration wherein the plurality of elements act to reflect the incident beam of light as a plane mirror, and a second modulator configuration wherein the plurality of elements act to diffract the incident beam of light.

Abstract: One embodiment disclosed comprises a method for bipolar operation of a light-modulating array. The method includes driving light-modulating elements of the array in a first polarity, switching polarities from the first polarity to a second polarity, driving the light-modulating elements of the array in a second polarity, switching polarities from the second polarity to the first polarity, and repeating the steps. Another embodiment disclosed comprises an apparatus utilizing a light-modulating array. The apparatus includes a first look-up table storing data for operating elements the light-modulating array in a first polarity mode, and a second look-up table storing data for operating the elements of the light-modulating array in a second polarity mode. The apparatus also includes a drive system for driving the elements of the light-modulating array. The drive system is coupled to both the first and second look-up tables.

Abstract: A 2D diffraction grating light valve modulates an incident beam of light. A plurality of elements each have a reflective surface with their respective reflective surfaces substantially coplanar. Alternatively, the reflective surfaces of the plurality of elements lie within one or more parallel planes. The elements are supported in relation to one another. Preferably, a planar member includes a plurality of holes arranged in a symmetrical two-dimensional array and configured such that the holes substantially optically extend the elements. Alternatively, one or more elements substantially optically extends the plurality of holes. The planar member includes a light reflective planar surface that is parallel to the plane of the elements within a functional area of the device. The planar member is supported in relation to the elements. By applying an appropriate biasing voltage to the planar member, the planar member can be moved in a direction normal to the plane of the elements.

Abstract: A method for domain patterning of nonlinear ferroelectric materials. The method seeks to reduce the formation of random and spontaneous micro-domains that typically result during thermal cycling of ferroelectric materials and which leads to patterning defects and degraded performance. In accordance with the invention, a ferroelectric wafer is provided with a conductive layer on the top and bottom surfaces of the wafer. A sufficient bias voltage is applied across the conductive layers to polarize the wafer into a single direction. At least one of the conductive layers is selectively patterned to form a conductive domain template. A sufficient revise bias voltage is then applied to the conductive domain template and a remaining conductive layer to produce the domain patterned structure. According to a preferred embodiment of the invention, the ferroelectric wafer is formed of LiNbO3 or LiTaO3.

Abstract: One embodiment disclosed relates to a system for modulating a plurality of micro-electromechanical (MEM) devices. The system includes a means for providing an amplitude modulation signal to each MEM device at a base frequency and a means for providing a width modulation signal at the base frequency. In addition, the system includes a clock means for providing a higher-frequency clock signal with a frequency that is a multiple of the base frequency. In this embodiment, the width modulation signal for each MEM device indicates at least one position on the higher-frequency clock signal.

Abstract: An apparatus for detecting wavelength change of a first light signal comprises an amplitude splitting interferometer and a detector. The amplitude splitting interferometer comprises first and second optical paths. The first optical path has a first index of refraction that varies with wavelength over a first wavelength band. The second optical path has a second index of refraction that is relatively constant over the first wavelength band. In operation the first light signal enters and exits the amplitude splitting interferometer forming interference light. The interference light couples to the detector which detects the wavelength change of the first light signal from the interference light. An interferometer comprises a first beam splitter, third and fourth optical paths, and a second beam splitter. The third optical path is optically coupled to the first beam splitter and has a third index of refraction that varies with wavelength over a second wavelength band.

Abstract: One embodiment disclosed relates to a method for driving a micro electromechanical (MEM) device. The method includes generating a high-frequency AC drive signal that is substantially greater in frequency than a resonance frequency of a movable feature in the MEM device, and modulating the amplitude of the high-frequency AC drive signal. A DC-like displacement of the movable feature in the MEM device is achieved by driving the movable feature using the amplitude modulated high-frequency AC drive signal.

Abstract: An adjustable diffractive light modulator is used to equalize the power level of wavelength multiplexed signals in wavelength division multiplexing applications. An optical channel transmits a multi-wavelength input signal through a wavelength demultiplexer. The input signal comprises a plurality of component signals defined according to a plurality of wavelengths. The de-multiplexer spatially separates the multi-wavelength input signal into its respective plurality of component signals, which are transmitted through a plurality of optical channels onto a plurality of controllable diffractive light modulators. The diffractive light modulators are advantageously comprised of grating light valves. Component signals are reflected off their respective diffractive light modulators and collected in a plurality of optical channels for re-transmission into a wavelength multiplexer. The reflected signals are combined through a multiplexing process and transmitted as an output beam.

Abstract: In one embodiment a micro device is formed by depositing a sacrificial layer over a metallic electrode, forming a moveable structure over the sacrificial layer, and then etching the sacrificial layer with a noble gas fluoride. Because the metallic electrode is comprised of a metallic material that also serves as an etch stop in the sacrificial layer etch, charge does not appreciably build up in the metallic electrode. This helps stabilize the driving characteristic of the moveable structure. In one embodiment, the moveable structure is a ribbon in a light modulator.

Abstract: One embodiment disclosed relates to a method for adaptive bipolar operation of a micro electromechanical (MEM) device. The method includes driving the MEM device in a first polarity, determining when an offset passes a first threshold, and switching from the first polarity to a second polarity when the offset passes the first threshold. Another embodiment disclosed relates to an apparatus for adaptive bipolar operation of a MEM device. The apparatus includes a first look-up table (LUT) for use in driving the MEM device in a first polarity, a circuit for determining when an offset passes a first threshold, and a polarity switch for switching from the first polarity to a second polarity when the offset passes the first threshold.

Abstract: An integrated device including one or more device drivers and a diffractive light modulator monolithically coupled to the one or more driver circuits. The one or more driver circuits are configured to process received control signals and to transmit the processed control signals to the diffractive light modulator. A method of fabricating the integrated device preferably comprises fabricating a front-end portion for each of a plurality of transistors, isolating the front-end portions of the plurality of transistors, fabricating a front-end portion of a diffractive light modulator, isolating the front end portion of the diffractive light modulator, fabricating interconnects for the plurality of transistors, applying an open array mask and wet etch to access the diffractive light modulator, and fabricating a back-end portion of the diffractive light modulator, thereby monolithically coupling the diffractive light modulator and the plurality of transistors.

Abstract: A method and apparatus of hermetically passivating a semiconductor device includes sealing a lid directly onto a semiconductor substrate. An active device is formed on the surface of the substrate and is surrounded by a substantially planar lid sealing region, which in turn is surrounded by bonding pads. A first layer of solderable material is formed on the lid sealing region. A lid is provided which has a second layer of solderable material in a configuration corresponding to the first layer. A solder is provided between the first layer and second layer of solderable materials. In the preferred embodiment, the solder is formed over the second layer. Heat is provided to hermetically join the lid to the semiconductor device without requiring a conventional package. Preferably the first and second layers are sandwiches of conventionally known solderable materials which can be processed using conventional semiconductor techniques.

Abstract: A method of reducing speckle includes dividing a laser illuminated area into phase cells, subdividing the phase cells into cell partitions, and applying a temporal phase variation to the cell partitions within an integration time of an intensity detector viewing the laser illuminated area. An apparatus for reducing speckle includes illumination optics, a diffuser, and projection optics. The illumination optics couple a laser illumination to the diffuser, which is located in a first image plane. The diffuser divides the laser illumination into the phase cells and subdivides the phase cells into the cell partitions. The diffuser also applies the temporal phase variation to the cell partitions. The projection optics project an image of the first image plane onto a diffuse surface. A display apparatus adds a light modulator to the apparatus for reducing speckle and places the light modulator in a third image plane located between a laser source and the diffuser.

Abstract: Optical devices comprising addressable pixels are tiled in an array configured for generating an image line. The addressable pixels are grouped into center pixels and addressable sub-pixels are grouped at the ends. The optical devices are tiled in staggered rows with addressable. sub-pixels and/or pixels overlapping along the array. To optimize the quality of the image, addressable sub-pixels are selectively operated and/or disabled to remove artifacts and maximize pixel density in the image line generated by the overlap regions. Arrays of optical devices, in accordance with the invention, are used generate image lines for display and print applications. The optical devices can be any light valve including MEM devices such as diffraction grating light valves and LCD devices.

Abstract: An apparatus having an improved, tunable gamma response is disclosed. The apparatus comprises a light modulator having a plurality of spaced-apart elements, composed of alternating active elements and passive elements lying in a single plane; a gamma controller; and a displacement controller. The gamma controller applies a gamma voltage to a substrate, displacing the plurality of spaced-apart elements to a bias plane, closer to the substrate. In a reflection mode, the plurality of spaced-apart elements function as a spectral mirror to an impinging light beam. In a diffraction mode, the displacement controller applies a displacement voltage to the active elements. The active elements are now moved to a second plane parallel to the bias plane so that the light beam impinging on the light modulator will be diffracted. The illumination intensity of a detected light signal is proportional to the displacement voltage raised to a power of between approximately 1.75 and 3.0, the gamma response.

Abstract: The current invention is directed to optical MEM devices and methods for making the same. MEM devices, in accordance with the current invention, have one or more movable micro-structures which are preferably ribbon structures or cantilever structures configured for modulating light. The movable micro-structures are patterned from a device layer comprising a silicon nitride under-layer, a reflective metal top-layer and a ceramic compensating layer. The ceramic compensating layer is provided. to reduce stress in the micro-structures which can lead to curvature. In accordance with the embodiments of the invention, the device layer is formed on a silicon substrate that is preferably etched with trenches before forming the device layer. The device layer is then patterned using lithographic masking and etching techniques to release the patterned device layer and form the movable micro-structures. Portions of the device layer which are formed over the trenches provide support for the released patterned device layer.

Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3).