Abstract: A method of manufacturing a semiconductor device includes forming a first photoresist layer on a substrate and forming a second photoresist layer on the first photoresist layer. The method also includes forming a first dissolvable region having a first width in the first photoresist layer and a second dissolvable region having a second width different from the first width in the second photoresist layer by radiating exposure light to some parts of the second and first photoresist layer. The method further includes forming a second opening in the second photoresist layer and a first opening in the first photoresist layer by developing the second dissolvable region and the first dissolvable region. The method additionally includes forming a conductive bump that fills the first and second openings.

Abstract: A semiconductor memory device may include a plurality of memory blocks and at least one insulation bridge. The plurality of the memory blocks may be defined by a plurality of slits parallel to each other. The at least one insulation bridge may be formed in at least one slit located on at least one side of a memory block of the plurality of memory blocks to support the adjacent memory blocks.

Abstract: A packaging device including bumps and a method of manufacturing the packaging device are presented. In the method of manufacturing a packaging device, a dielectric layer that covers a packaging base is formed and a lower layer is formed over a packaging base including first and second connecting pads. A plurality of dummy bumps that overlaps with the dielectric layer is formed. A sealing pattern that covers the dummy bumps, filling areas between the dummy bumps, is formed. A lower layer pattern in which the plurality of dummy bumps have been disposed is formed by removing portions of the lower layer that are exposed and do not overlap with the sealing pattern.

Abstract: An imaging device may include an image sensing device including a plurality of pixels to detect incident light from a scene to generate a pixel signal corresponding to the incident light and generate image data, wherein the image sensing device operates to perform imaging operation in response to a control signal, a luminance acquisition unit to acquire the image data corresponding to first pixels among the plurality of pixels associated with a target region of an image of the scene captured by the image sensing device, a controllable item acquisition unit to acquire one or more sensitivity items indicative of sensitivity of each pixel to light, as a controllable item, and a set value calculation unit to generate the control signal to the imagine sensing device by calculating a set value for the controllable item based on the image data of the target region and the controllable item.

Abstract: A semiconductor memory device includes a tunnel insulating layer, a data storage layer, and a blocking insulating layer that are sequentially disposed. The tunnel insulating layer includes Metal Organic Frameworks (MOF) having a lower dielectric constant than a dielectric constant of the blocking insulating layer.

Abstract: A semiconductor device includes: a gate trench formed into a semiconductor substrate; a gate dielectric layer formed in the gate trench to cover an inside surface of the gate trench; and a gate electrode disposed over the gate dielectric layer to fill the gate trench, wherein the gate electrode includes: second crystal grains formed in the gate trench; and first crystal grains disposed between the second crystal grains and the gate dielectric layer and having a smaller crystal grain size than the second crystal grains.

Abstract: A semiconductor device comprises: a first or a second path configured to transmit a first signal which swings between a ground level and a first level, a third path configured to transmit a second signal which swings between the ground level and a second level lower than the first level, a transmitter configured to output received the first signal through the first or second path as the second signal to the third path, and initialize in response to an enable signal, and a receiver configured to output received the second signal through the third path as the first signal through the first or second path, determine level of the second signal through a reference level that is regulated according to a fed-back level of an output terminal thereof, and initialize in response to the enable signal.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, the memory system may, with respect to data stored in the memory device, write the data to a first target memory block or a second target memory block among the plurality of memory blocks according to whether a data type of the data is a read-intensive type or a write-intensive type.

Abstract: A memory system includes a memory device including plural memory groups, each memory group including plural non-volatile memory cells; and a controller configured to transmit a command to the memory device so that the memory device performs a data input/output operation within at least one memory group among the plural memory groups, receive a response for the command and a status data regarding the at least one memory group from the memory device, and determine whether the data input/output operation has succeeded or failed based on the response and the status data.

Abstract: Provided herein is a memory device for performing a program operation on memory cells. The memory device include a plurality of memory cells configured to store data, a voltage generator configured to apply program voltages to a word line coupled to the plurality of memory cells during a program operation in which the plurality of memory cells are programmed to a plurality of program states, a cell speed determiner configured to determine a program speed of the plurality of memory cells depending on a number of pulses for the program voltages applied to the word line while the program operation is being performed, and a program manager configured to change a condition for remaining program operations depending on the program speed determined by the cell speed determiner.

Abstract: A memory system includes a host circuit and a memory circuit. The host circuit controls a bandwidth of a command-address signal based on data driving cycle information. The memory circuit performs an input/output operation based on the command-address signal.

Abstract: A memory controller and a method of operating the same. The memory controller which increases the number of read commands to be performed during a suspend period may include a command generator configured to receive a request from a host and generate a command corresponding to the request, a command queue configured to store the generated command, a command controller configured to control the command queue so that the command stored in the command queue is output to the memory device, and a suspension controller configured to, when a read request is input from the host while the memory device is performing an operation, determine a delay amount of time based on a number of read commands stored in the command queue and provide a suspend command that instructs suspension of performance of the operation to the memory device after the delay amount of time has elapsed.

Abstract: Disclosed are a data processing system comprising: a memory system for providing a host with a memory map segment including map pieces; and the host for storing the memory map segment as a host map segment and converting a logical address into a physical address using the host map segment. The memory system stores changed map pieces in a map cache, inserts the changed map pieces in a response to a first command, and provides the host with the response. The host updates the host map segment based on the changed map pieces. When a read command includes a logical address and a physical address, the memory system accesses a memory device using the physical address of the read command according to whether the logical address of the read command is stored in the map cache.

Abstract: A semiconductor device includes: a first stacked structure including a first lower dielectric layer, a first horizontal gate structure, and a first upper dielectric layer stacked vertically; a second stacked structure including a second lower dielectric layer, a second horizontal gate structure, and a second upper dielectric layer stacked vertically, and having a first side facing a first side of the first stacked structure; a first channel layer formed on the first side of the first stacked structure; a second channel layer formed on the first side of the second stacked structure; a lower electrode layer commonly coupled to lower ends of the first and second channel layers between the first and second stacked structures; a first upper electrode layer coupled to an upper end of the first channel layer; and a second upper electrode layer coupled to an upper end of the second channel layer.

Abstract: A memory apparatus includes an address decoding circuit configured to output a test redundancy address based on an address that is transmitted from a memory controller; and a redundancy address check circuit configured to determine whether the test redundancy address is replacing a failed address, in order to perform an ECC test operation by using the test redundancy address.

Abstract: A Peripheral Component Interconnect Express (PCIe) interface device includes a transaction layer generating a transaction packet for transmission of a transaction, a data link layer generating a link packet including a protection code and a sequence number for the transaction packet and a link packet including a sequence number on the basis of the transaction packet, a physical layer generating a physical packet on the basis of the link packet and sequentially outputting the physical packet, a link training module performing negotiation for a link coupled through the physical layer and maintaining data information based on whether a link down occurring when the negotiation for the link is not performed is requested by a host or not, and a PCIe register storing information about the transaction layer, the data link layer, the physical layer, and the link training module.

Abstract: An image sensing device includes a semiconductor substrate, a photoelectric conversion region structured to generate charge carriers from incident light and capture the charge carriers using an electric potential difference caused by a demodulation control signal applied to the photoelectric conversion region, and a circuit region disposed adjacent to the photoelectric conversion region, the circuit region including a plurality of pixel transistors that generate and output a pixel signal corresponding to the charge carriers captured by the photoelectric conversion region. The circuit region includes a first well region formed to have a first length in a first direction, and a second well region formed below the first well region such that a lower end of the first well region is in contact with an upper end of the second well region, and formed to have a second length shorter than the first length in the first direction.

Abstract: A memory system includes: a memory device suitable for providing row-hammer data to set refresh rates for adjacent word lines of a target word line, and performing a target refresh operation on one or more word lines corresponding to a first row-hammer address according to a first target refresh command; and a memory controller suitable for generating a plurality of sampling addresses by sampling an active address, generating a plurality of counting values by comparing the sampling addresses with the active address, calculating a plurality of adjacent addresses corresponding to the sampling addresses based on the counting values and the row-hammer data, and providing the adjacent addresses as the first row-hammer address with the first target refresh command.

Abstract: A delay locked loop circuit includes a delay line, a phase detector, a selection controller, and a charge pump. The delay line delays, based on a delay control voltage, a reference clock signal to generate an internal clock signal and a feedback clock signal. The phase detector compares phases of the internal clock signal and the feedback clock signal to generate a first detection signal and a second detection signal. The selection controller provides the reference clock signal as an up-signal and a down-signal. The charge pump generates the delay control voltage based on the up-signal and the down-signal.

Abstract: A three-dimensional memory device includes a lower stack and an upper stack stacked one on the other, and each including a plurality of word lines which are stacked alternately with a plurality of interlayer dielectric layers, wherein each of the lower stack and the upper stack includes a first cell part, a second cell part, a coupling part which couples the first cell part and the second cell part, and a staircase part which extends parallel to the coupling part from the first cell part and in which pad areas of the word lines are disposed in a stepwise manner, and wherein the coupling part of the upper stack is disposed to overlap with the staircase part of the lower stack, and the staircase part of the upper stack is disposed to overlap with the coupling part of the lower stack.