Abstract: Duplexing systems, devices and methods. In some embodiments, a wireless system can include a signal path configured to support a first modified time-division duplex band operation and a second modified time-division duplex band operation.

Abstract: A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.

Abstract: A circuit component has an address determined from a voltage level applied to a single electrical contact of the circuit component. The circuit component is configured to be assigned one of at least three unique addresses and to select from among the at least three unique addresses based on the voltage level.

Abstract: The disclosure relates to a wideband, tunable hybrid-based combiner for a Doherty power amplifier architecture. The architecture includes two parallel power amplifiers: a carrier amplifier and a peaking amplifier. The peaking amplifier modulates the load seen by the carrier amplifier, allowing the carrier amplifier to remain in high-efficiency, saturated operation even at back-off. This load modulation can be achieved using impedance matching networks having an impedance matched to a specific frequency. Typically, a multi-mode/multi-band power amplifier module that does not include a tunable impedance circuit as disclosed herein, several Doherty power amplifier modules (each of which uses two amplifiers) would be used to cover several bands, which may make implementation costly and/or impractical. Thus, the architectures described herein provide wideband amplification using a Doherty amplifier configuration.

Abstract: According to various aspects and embodiments, a method for forming a packaged electronic device is provided. In accordance with one embodiment, the method comprises depositing a layer of temporary adhesive material on at least a portion of a surface of a first substrate having a coefficient of thermal expansion, depositing a layer of dielectric material on at least a portion of the layer of temporary adhesive material, forming at least one seal ring on at least a portion of the layer of dielectric material, providing a second substrate having a coefficient of thermal expansion that is substantially the same as the coefficient of thermal expansion of the first substrate, the second substrate having at least one bonding structure attached to a surface of the second substrate, and aligning the at least one seal ring to the at least one bonding structure and bonding the first substrate to the second substrate.

Abstract: Systems and methods for a tunable impedance are provided. A tunable impedance includes a transistor assembly having two terminals and a control input. The transistor assembly includes one or more transistors electrically connected between the two terminals to provide a first impedance between the two terminals, based upon a control signal. One or more replica transistors react to the control signal in a similar fashion as the transistor assembly, to provide a replica impedance based upon the control signal. A control circuit is configured to generate the control signal based upon a voltage across the replica transistor(s) and/or a current through the replica transistor(s).

Abstract: Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter.

Abstract: An electronic device comprises a first surface acoustic wave (SAW) resonator and a second SAW resonator, each including interleaved interdigital transducer (IDT) electrodes, the first and second SAW resonators being formed on a same piezoelectric substrate, the first SAW resonator having IDT electrodes with a different finger pitch than the IDT electrodes of the second SAW resonator; a dielectric material layer disposed on the IDT electrodes of the first and second SAW resonators; and a high velocity layer disposed within the dielectric material layer disposed on the IDT electrodes of the first SAW resonator, the second SAW resonator lacking a high velocity layer disposed within the dielectric material layer disposed on the IDT electrodes.

Abstract: A clamping circuit comprises a first field-effect transistor (FET) having a gate, a source, and a drain, a diode, a first voltage source, and coupling circuitry configured to couple the first voltage source to the drain of the first FET and the diode to the source of the first FET.

Abstract: Described herein are systems, devices, and methods for front end configurations that support bi-directional communication for cellular and wireless local area network signals. The configurations include an antenna triplexer, a first multiplexer, and a second multiplexer. A first filter of the triplexer is coupled to a signal port of the first multiplexer, a second filter of the triplexer is coupled to a first signal port of the second multiplexer, and a third filter of the triplexer is coupled to a second signal port of the second multiplexer. The first multiplexer processes cellular frequency bands and the second multiplexer processes cellular frequency bands and wireless local area network signals. Each frequency band includes a duplexer to enable bi-directional communication.

Abstract: Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Co+2 such that the relaxation peak associated with the Co+2 substitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band.

Abstract: Described herein are, among others, systems and methods associated with electrical test planning in a semiconductor manufacturing context. Within an electrical test planning system in the semiconductor industry, various models that allow a better utilization of installed capacity were developed. The workflow in the plant and the information flow in the electrical test planning area were analyzed to reduce or minimize setup times on the equipment. A paradigm shift is disclosed, with which planning is done at the product family level instead of at the level of the part number, starting with priority products required by the market.

Abstract: Aspects of this disclosure relate to a surface acoustic wave filter with an integrated temperature sensor. The integrated temperature sensor can be a resistive thermal device configured as a reflective grating for a surface acoustic wave resonator, for example. A radio frequency system can provide over temperature protection by reducing a power level of a radio frequency signal provided to the surface acoustic wave filter responsive to an indication of temperature provided by the integrated temperature sensor satisfying a threshold.

Abstract: A packaged module for use in a wireless communication device has a substrate supporting a crystal and a first die that includes at least a microprocessor and one or more of radio frequency transmitter circuitry and radio frequency receiver circuitry. The first die is disposed between the crystal and the substrate. An overmold encloses the first die and the crystal. The substrate also supports a second die that includes at least a power amplifier for amplifying a radio frequency input signal, where the second die is disposed on an opposite side of the substrate from the first die and the crystal.

Abstract: A reconfigurable triplexer that can support more frequency bands than a traditional triplexer is disclosed. For example, the reconfigurable triplexer can handle frequencies of several hundred megahertz up to 10 gigahertz. Further, certain implementations of the reconfigurable multiplexer can reduce or eliminate frequency dead zones that exist with traditional multiplexers. The reconfigurable triplexer includes a multi-stage filter bank capable of supporting a number of frequency bands and a bypass circuit that enables the triplexer to support a variety of sets of frequencies. For instance, unlike traditional triplexers, the reconfigurable triplexer can support both frequency bands with relatively narrow spacing and frequency bands with relatively wide spacing. Further, the inclusion of the bypass circuit enables the reduction or elimination of dead zones between supported frequencies.

Abstract: Aspects of this disclosure relate to an amplification circuit that includes a stacked amplifier and a bias circuit. The stacked amplifier includes at least a first transistor and a second transistor in series with each other. The stacked amplifier is operable in at least a first mode and a second mode. The bias circuit is configured to bias the second transistor to a linear region of operation in the first mode and to bias the second transistor as a switch in the second mode. In certain embodiments, the amplification circuit can be a power amplifier stage configured to receive a supply voltage that has a different voltage level in the first mode than in the second mode.

Abstract: A method for metallization during fabrication of an Integrated Circuit (IC). The IC includes a semiconductor wafer having a back surface and a front surface. The method includes etching a via hole through the semiconductor wafer. After this, a seed metal layer is deposited on the back surface of the semiconductor wafer. Thereafter, a photoresist layer is deposited on the back surface of the semiconductor wafer such that the via hole remains uncovered. After depositing the photoresist layer, a metal layer is formed along the walls of the via hole to electrically connect the back surface and the front surface of the semiconductor wafer. Finally, the photoresist layer is removed subsequent to forming the metal layer.

Abstract: Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example barium tungstate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

Abstract: A front-end module (FEM) is disclosed that includes an integrous signal combiner. The integrous signal combiner can process received signals and use a set of resonant circuits to filter signal noise prior to recombination of a plurality of signal bands that form an aggregate carrier signal. These resonant circuits may be placed after a set of low noise amplifiers and can be used to more efficiently reduce noise and parasitic loading within each of a set of signal paths. Each resonant circuit may be configured to filter noise relating to a bandwidth for a signal that is to be combined with the signal of the signal path that includes the resonant circuit. In some implementations, the integrous signal combiner can be a tunable integrous signal combiner with resonant circuits that may be reconfigurable or dynamically configurable.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes a multi-layer interdigital transducer electrode. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode includes a first interdigital transducer electrode layer positioned between a second interdigital transducer electrode layer and the piezoelectric layer. The second interdigital transducer electrode layer can include aluminum and having a thickness of at least 200 nanometers. The acoustic wave device can include a temperature compensation layer arranged such that the interdigital transducer electrode is positioned between the piezoelectric layer and at least a portion of the temperature compensation layer. Related filters, modules, wireless communication devices, and methods are disclosed.