Abstract: Apparatus related to conformal coating implemented with surface mount devices. In some embodiments, a radio-frequency (RF) module includes a packaging substrate configured to receive a plurality of components. The RF also includes a surface mount device (SMD) mounted on the packaging substrate, the SMD including a metal layer that faces upward when mounted. The RF module further includes an overmold formed over the packaging substrate, the overmold dimensioned to cover the SMD. The RF module further includes an opening defined by the overmold at a region over the SMD, the opening having a depth sufficient to expose at least a portion of the metal layer. The RF module further includes a conformal conductive layer formed over the overmold, the conformal conductive layer configured to fill at least a portion of the opening to provide an electrical path between the conformal conductive layer and the metal layer of the SMD.

Abstract: An electronic filter includes a plurality of series arm acoustic wave resonators electrically connected in series between an input port and an output port, a plurality of parallel arm acoustic wave resonators electrically connected in parallel and electrically connected on first sides between respective ones of the plurality of series arm acoustic wave resonators and electrically connected on second sides to ground, and at least one additional acoustic wave resonator electrically connected in parallel to one of one of the plurality of series arm acoustic wave resonators or one of the plurality of parallel arm acoustic wave resonators and having a temperature coefficient of frequency (TCF) lower than a TCF of the acoustic wave resonator to which it is electrically connected in parallel.

Abstract: Aspects of this disclosure relate to a front end architecture for selectively adding an external carrier aggregation band. A switch element can connect a radio frequency signal path to an antenna path through a frequency domain multiplexer, such as a diplexer, in a first mode. The switch element can connect the radio frequency path to the antenna path and bypass the frequency domain multiplexer in a second mode. The frequency domain multiplexer can be external to a front end module that include the radio frequency signal path. In the first mode, a front end system can support carrier aggregation with a band associated with circuitry implemented external to the front end module.

Abstract: Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase hexagonal ferrite material, such as those including strontium. In some embodiments, oxides consistent with the stoichiometry of Sr3Co2Fe24O41, SrFe12O19 or CoFe2O4 can be used form an enhanced hexagonal ferrite material.

Abstract: According to various aspects and embodiments, a support structure for packaging an electronic device is provided. In one example, a packaged electronic device includes a substrate, at least one electronic device disposed on the substrate, an encapsulation structure disposed on the substrate and having a wall that forms a perimeter around the at least one electronic device, and at least one support structure formed from a photosensitive polymer and disposed adjacent the wall of the encapsulation structure. The at least one support structure has a configuration that provides at least one of increased adhesion and mechanical strength to the encapsulation structure.

Abstract: Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.

Abstract: An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.

Abstract: Reconfigurable antenna systems with ground tuning pads are provided herein. In certain configurations, an antenna system includes a module substrate including a ground plane and a ground tuning pad configured to receive a ground voltage from the ground plane. The antenna system further includes an antenna element and a tuning conductor that is spaced apart from the antenna element and operable to load the antenna element. Furthermore, a switch is electrically connected between the tuning conductor and the ground tuning pad, and operates to selectively connect the tuning conductor to the ground plane by way of the ground tuning pad to provide tuning to the antenna element.

Abstract: The disclosed technology is related to a radio-frequency (RF) amplifier having a bypass circuit and a resonant structure to improve performance in a bypass mode (e.g., a low gain mode). The disclosed amplifiers have a resonant structure that effectively isolates an amplifier core from a bypass circuit. For example, in a bypass mode, the resonant structure is configured to create an open impedance looking into the amplifier core input. This effectively removes any loading from the amplifier core to the bypass circuit. The disclosed amplifiers with resonant structures improve linearity performance in bypass modes due at least in part to the open impedance to the amplifier core provided by the resonant structure.

Abstract: Low noise serial interfaces with gated clock are provided herein. In certain configurations herein, a slave device of a serial interface includes a shift register for serially shifting in an interface data signal based on timing of an interface clock signal, a control circuit (for instance, a finite-state machine) for controlling the slave device, and a register bank for storing data programmed to the slave device via the serial interface. The control circuit cuts off or gates the interface clock signal in response to determining that an interface command received over the serial interface is not intended for the slave device.

Abstract: A wireless device comprising a first antenna and second antenna, a transceiver and a radio frequency front end system electrically coupled between the transceiver and the antennas. The RF front end system includes a first module operable to provide a high band transmit signal to the first antenna, receive a first high band receive signal and a first mid band receive signal from the first antenna. The first high band receive signal has a frequency range greater than that of the first mid band receive signal. The RF front end system further includes a second module operable to provide a mid band transmit signal to the second antenna, receive a second mid band receive signal and a second high band receive signal from the second antenna. The second high band receive signal has a frequency range greater than that of the second mid band receive signal.

Abstract: Radio frequency (RF) systems with tunable filters are provided herein. In certain embodiments, an RF system includes a first RF processing circuit configured to process a first frequency band of a first communication standard and a second frequency band of a second communication standard. The first frequency band and the second frequency band are close in frequency and/or partially overlapping in frequency. The first RF processing circuit includes a tunable filter for changing the bandwidth of the first RF processing circuit to enhance the robustness of the first RF processing circuit to blocker or jammer signals of a third frequency band.

Abstract: Multipath filters are provided herein. In certain configurations, a multipath filter includes multiple filter paths or circuit branches that are electrically connected in parallel with one another between an input terminal and an output terminal. The input terminal receives an input signal, and each filter circuit branch includes a double-in double-switched (DIDS) downconverter that downconverts the input signal with two different clock signal phases to generate a downconverted signal. Each filter circuit branch further includes a filter network that generates a filtered signal by filtering the downconverted signal and an upconverter that upconverts the filtered signal to generate a branch output signal. Additionally, the branch output signals from the filter circuit branches are combined to generate an output signal at the output terminal.

Abstract: Apparatus and methods for bias switching of power amplifiers are provided herein. In certain configurations, a power amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal, a power management circuit that controls a voltage level of a supply voltage of the power amplifier, and a bias control circuit that biases the power amplifier. The power management circuit is operable in multiple supply control modes, such as an average power tracking (APT) mode and an envelope tracking (ET) mode. The bias control circuit is configured to switch a bias of the power amplifier based on the supply control mode of the power management circuit.

Abstract: In some embodiments, a power amplification system can comprise a current source configured to provide a bias current, a current mirror configured to mirror the bias current, a comparator configured to compare the mirrored bias current to a threshold current, and a transistor at an output of the comparator. The transistor can be configured to be activated in response to the mirrored bias current exceeding the threshold current.

Abstract: A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.

Abstract: Circuits, devices and methods related to amplification with active gain bypass. In some embodiments, an amplifier can include a first amplification path implemented to amplify a signal, and having a cascode arrangement of a first input transistor and a cascode transistor to provide a first gain for the signal when in a first mode. The amplifier can further include a second amplification path implemented to provide a second gain for the signal while bypassing at least a portion of the first amplification path when in a second mode. The second amplification path can include a cascode arrangement of a second input transistor and the cascode transistor shared with the first amplification path. The amplifier can further include a switch configured to allow routing of the signal through the first amplification path in the first mode or the second amplification path in the second mode.

Abstract: A metal oxide semiconductor field effect transistor preferably fabricated with a silicon-on-insulator process has a first semiconductor region and a second semiconductor region in a spaced relationship thereto A body structure is defined by a channel segment between the first semiconductor region and the second semiconductor region, and a first extension segment structurally contiguous with the channel segment. A shallow trench isolation structure surrounds the first semiconductor region, the second semiconductor region, and the body structure, with a first extension interface being defined between the shallow trench isolation structure and the first extension segment of the body structure to reduce leakage current flowing from the second semiconductor region to the first semiconductor region through a parasitic path of the body structure.

Abstract: Broadband power splitter. In some embodiments, a power splitter can include an input port, a first output port and a second output port. The power splitter can further include a first signal path implemented between the input port and the first output port, and a second signal path implemented between the input port and the second output port. Each of the first and second signal paths can include a variable capacitance configured to provide a plurality of capacitance values that result in different frequency responses of the respective signal path.

Abstract: Uplink carrier aggregation architecture. In some embodiments, an uplink (UL) carrier aggregation (CA) architecture may include a first antenna port and a second antenna port. The UL CA architecture may also include a first radio-frequency (RF) circuit configured to route a first transmit (TX) signal and a first receive (RX) signal to and from the first antenna port, respectively, the first RF circuit further configured to route a second RX signal from the first antenna port. The UL CA architecture may further include a second RF circuit configured to route a second TX signal to the second antenna port to provide UL CA capability between the first and second TX signals.