Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm?3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Devices and methods related to packaging of radio-frequency (RF) devices on ceramic substrates. In some embodiments, a packaged electronic device can include a ceramic substrate configured to receive one or more components. The ceramic substrate can include a conductive layer in electrical contact with a ground plane. The packaged electronic device can further include a die having an integrated circuit and mounted on a surface of the ceramic substrate. The packaged electronic device can further include a conformal conductive coating implemented over the die to provide shielding functionality. The packaged electronic device can further include an electrical connection between the conformal conductive coating and the conductive layer.

Abstract: An antenna impedance tuner can include first and second nodes, a bypass path, first and second series capacitance paths, and an inductance path, with each path being implemented between the first and second nodes and including a switch configured to allow the path to couple or uncouple the first and second nodes. The tuner can further include first and second shunt paths, with each shunt path being implemented between the second node and ground and including a switch configured to allow the shunt path to couple or uncouple the second node and the ground. The tuner can further include a switchable grounding path implemented along the inductance path and configured to allow the inductance path to function as a series inductance path between the first and second nodes, or as a shunt inductance path between the ground and a node along the inductance path.

Abstract: Disclosed herein are signal amplifiers that provide impedance adjustments for different gain modes. The impedance adjustments are configured to result in a constant real impedance for an input signal at the amplifier. The amplifiers include a scalable impedance adjustment circuit that adjusts inductance and/or a device width to compensate for changes in the total impedance presented to an input signal. By providing impedance adjustments, the amplifiers reduce losses and improve performance by improving impedance matching over a range of gain modes.

Abstract: Apparatus and methods for electrical overstress (EOS) protection circuits are provided herein. In certain configurations, an EOS protection circuit includes an overstress sensing circuit electrically connected between a pad and a first supply node, an impedance element electrically connected between the pad and a signal node, a controllable clamp electrically connected between the signal node and the first supply node and selectively activatable by the overstress sensing circuit, and an overshoot limiting circuit electrically connected between the signal node and a second supply node. The overstress sensing circuit activates the controllable clamp when an EOS event is detected at the pad. Thus, the EOS protection circuit is arranged to divert charge associated with the EOS event away from the signal node to provide EOS protection.

Abstract: A method of manufacturing an electronic device formed in a cavity may include, on a first substrate having a bottom surface and a top surface, forming a first side wall of a certain height along a periphery on the bottom surface to surround an electronic circuit disposed on the bottom surface; forming a via communicating between the bottom surface and the top surface, forming of the via including stacking a first stop layer and a second stop layer sequentially on a portion of the bottom surface of the first substrate corresponding to the via and etching the first substrate to form a through-hole corresponding to the via, a rate of etching the first substrate being greater than that of the first stop layer and a rate of etching the first stop layer being greater than that of the second stop layer; forming a second side wall of a certain height along a periphery on a top surface of the second substrate; and aligning and bonding the first side wall and the second side wall.

Abstract: A coupling methodology and circuit arrangements to provide multi-frequency simultaneous power measurement. In one example, a wireless device front-end apparatus includes a plurality of antenna swap switches each connected to first and second antenna contacts, and a plurality of electromagnetic couplers each having an input port to receive a input signal of a unique frequency, a coupled port that provides a coupled signal based on the input signal, an output port connected to one of the plurality of antenna swap switches, and an isolation port. The apparatus further includes a termination network including a plurality of termination loads, and an output switch network configured to selectively connect the coupled port of each electromagnetic coupler to a coupler output bank to provide the coupled signals at the coupler output bank, and to selectively connect the isolation port of each electromagnetic coupler to one of the plurality of termination loads.

Abstract: Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of main FETs coupled in series and an auxiliary FET coupled in parallel with an interior FET of the plurality of main FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.

Abstract: Waveguide devices and methods for radio-frequency applications. In some embodiments, a radio-frequency waveguide can include a dielectric block having a first edge that joins a mounting surface and a first adjacent surface. The waveguide can further include a conductive coating that substantially covers the dielectric block, and defining a wrap-around opening that exposes the dielectric block along the first edge. The wrap-around opening can include a strip on the first adjacent surface along the first edge and a strip on the mounting surface along the first edge, such that the first edge of the dielectric block is continuously exposed within the wrap-around opening.

Abstract: A broadband amplifier assembly is provided that includes a fixed gain amplifier coupled to an adjustable attenuator which is further coupled to a power amplifier. The adjustable attenuator includes a plurality of attenuation cells directly coupled in series between the input and the output of the adjustable attenuator.

Abstract: A method for fabricating a radio-frequency device involves providing a substrate structure including a silicon handle wafer, an oxide layer formed on the silicon handle wafer, and an active silicon layer disposed on the oxide layer.

Abstract: Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.

Abstract: Doherty power amplifier having high supply voltage. In some embodiments, a power amplification system can include a supply system configured to provide a high-voltage supply signal, and a Doherty power amplifier having an input splitter configured to receive and split a signal into a carrier amplifier and a peaking amplifier. The Doherty power amplifier can further include a combiner configured to combine amplified signals from the carrier and peaking amplifiers to provide an output signal. The Doherty power amplifier can be configured to receive the high-voltage supply signal for operation of the carrier and peaking amplifiers. The power amplification system can further include an output path configured to couple the combiner to a filter. The Doherty power amplifier can have an impedance substantially the same as an impedance of the filter when operated with the high-voltage supply signal.

Abstract: Methods for improved die bonding. In some embodiments, a method includes applying hot air to a die. The method also includes placing the die on a substrate after applying the hot air to the die. The method further includes waiting a predefined bonding period in order to establish a bond between the die and the substrate.

Abstract: Disclosed herein are silicon-on-insulator (SOI) switches and associated control circuits having level shifters configured to provide increased voltages (positive and/or negative) to the switches. The disclosed level shifters can be configured to provide increased voltages and can be used with high-linearity switches and/or can improve the linearity of switches. The improved switch performance can improve front end module performance for applications such as carrier aggregation (CA) and multiple input multiple output (MIMO) as well as with protocols such as Long-Term Evolution Advanced (or LTE-A).

Abstract: Unpowered switching module. A switching module can include a first input terminal, a second input terminal, and an output terminal. The output terminal can be configured to output a radio-frequency (RF) component of an input signal received on the first input terminal or the second input terminal in response to the input signal including a positive direct-current (DC) voltage.

Abstract: An acoustic wave device that includes a spinel layer, a piezoelectric layer, a temperature compensating layer between the spinel layer and the piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of ?. The piezoelectric layer can have a thickness that is less than ?. In some embodiments, the spinel layer can be a polycrystalline spinel layer.

Abstract: Apparatus and methods for front-end systems with directional couplers and a shared back switch are provided. In certain configurations, a method includes transmitting a first transmit signal from a first transmit port to an antenna port, generating a first coupled signal in response to the first transmit signal using a first directional coupler, providing the first coupled signal to a receive port by way of a first loopback selection switch and a shared back switch, transmitting a second transmit signal from a second transmit port to the antenna port, generating a second coupled signal in response to the second transmit signal using a second directional coupler, and providing the second coupled signal to the receive port by way of a second loopback selection switch and the shared back switch.

Abstract: An electromagnetic coupler apparatus includes a plurality of couplers, each having a coupled port and an isolation port. The coupler apparatus includes an output port configured to provide a coupled signal from one or more of the plurality of couplers, and a number of selection control inputs. Each of the selection control inputs is configured to control one or more switches to select an individual one of the plurality of couplers to provide at least a portion of the coupled signal at the output port.

Abstract: Reconfigurable front-end module for carrier aggregation. In some embodiments, a front-end module can include a plurality of signal ports and a plurality of antenna ports. The front-end module can further include a switch assembly configured to route signals along one or more of a plurality of filtering paths between the signal ports and the antenna ports. Each of the filtering paths can include a filter, and the filtering paths can be configured to allow the antenna ports to be combined outside of the front-end module to accommodate a corresponding antenna configuration. The filtering paths can be further configured to maintain desirable filtering performance levels for different combinations of the antenna ports outside of the front-end module corresponding to the different antenna configurations.