Abstract: Front-end architecture having split triplexers for carrier aggregation and MIMO support. In some embodiments, a multiplexing architecture can include an assembly of filters configured to support carrier aggregation with one or more antennas. The assembly of filters can include a first triplexer configured to support a low-band, a mid-band, and a first high-band. The assembly of filters can further include a second triplexer configured to support the low-band, the mid-band, and a second high-band. The multiplexing architecture can further include a switch assembly implemented between the assembly of filters and respective one or more nodes associated with the one or more antennas.

Abstract: Circuits, devices and methods are disclosed, including a phase shifter comprising a first node and a second node, and a first transmission line element having an inductance and a variable capacitance on each side of the inductance, the variable capacitance configured to provide a plurality of capacitance values to yield corresponding phase shift values based on an increment having a magnitude that is less than 90 degrees. In some implementations, the phase shifter further comprises a second transmission line element in series with the first transmission line element, the second transmission line element having an inductance and a variable capacitance on each side of the inductance configured to extend an overall phase shift range provided by the phase shifter.

Abstract: Aspects of the present disclosure relate to determining a layout of a racetrack that forms part of an RF isolation structure of a packaged module and the resulting RF isolation structures. Locations of where the racetrack can be adjusted (for example, narrowed) and/or removed without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, a portion of the racetrack can be removed to create a break and/or a portion of the racetrack can be narrowed in a selected area.

Abstract: Devices and methods related to radio-frequency (RF) switches having improved on-resistance performance. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first ON-resistance (Ron) value that is less than a second Ron value corresponding to a similar stack having a substantially uniform distribution of the parameter.

Abstract: Disclosed are devices and methods related to a conductive paint layer configured to provide radio-frequency (RF) shielding for a packaged semiconductor module. Such a module can include a packaging substrate, one or more RF components mounted on the packaging substrate, a ground plane disposed within the packaging substrate, and a plurality of RF-shielding wirebonds disposed on the packaging substrate and electrically connected to the ground plane. The module can further include an overmold structure formed over the packaging substrate and dimensioned to substantially encapsulate the RF component(s) and the RF-shielding wirebonds. The overmold structure can define an upper surface that exposes upper portions of the RF-shielding wirebonds. The module can further include a conductive paint layer having silver flakes disposed on the upper surface of the overmold structure so that the conductive paint layer, the RF-shielding wirebonds, and the ground plane form an RF-shield for the RF component(s).

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Abstract: Disclosed are embodiments of isolator/circulator junctions that can be used for radio-frequency (RF) applications, and methods of manufacturing the junctions. The junctions can have excellent impedance matching, even as they are being miniaturized, providing significant advantages over previously used junctions. The junctions can be formed of both high and low dielectric constant material.

Abstract: Aspects of the present disclosure relate to a packaged module with a radio frequency isolation structure that includes a racetrack, a conductive layer, and a conductive feature in an electrical path between the racetrack and the conductive layer. The racetrack can be disposed in a substrate and configured at a ground potential. The racetrack can include a break.

Abstract: A wireless device comprising a first antenna and second antenna, a transceiver and a radio frequency front end system electrically coupled between the transceiver and the antennas. The RF front end system includes a first module operable to provide a high band transmit signal to the first antenna, receive a first high band receive signal and a first mid band receive signal from the first antenna. The first high band receive signal has a frequency content greater than that of the first mid band receive signal. The RF front end system further includes a second module operable to provide a mid band transmit signal to the second antenna, receive a second mid band receive signal and a second high band receive signal from the second antenna. The second high band receive signal has a frequency content greater than that of the second mid band receive signal.

Abstract: Front-end architecture having split diplexers for carrier aggregation and MIMO support. In some embodiments, a multiplexing architecture can include an assembly of filters configured to support carrier aggregation with one or more antennas. The assembly of filters can include a first diplexer configured to support a mid-band and a first high-band. The assembly of filters can further include a second diplexer configured to support the mid-band and a second high-band. The multiplexing architecture can further include a switch assembly implemented between the assembly of filters and respective one or more nodes associated with the one or more antennas.

Abstract: A power amplifier system can be configured to provide amplification to a radio frequency signal associated with a first frequency band and to output an amplified radio frequency signal. The system can include a bandpass filter arranged in a feedback loop with respect to the power amplifier and configured to pass through a portion of the amplified radio frequency signal corresponding to a second frequency band. A first shifter can be positioned in the feedback loop, and an output of the feedback loop can provide negative feedback to an input of the power amplifier.

Abstract: Aspects of this disclosure relate to a surface acoustic wave assembly that includes a first surface acoustic wave filter, a second surface acoustic wave filter, and a thermally conductive sheet configured to dissipate heat from the first surface acoustic wave filter in an area corresponding to the second surface acoustic wave filter. The thermally conductive sheet can be thinner than a piezoelectric layer of the first surface acoustic wave filter. Related radio frequency modules and methods are disclosed.

Abstract: A linearization circuit that reduces intermodulation distortion in an amplifier output receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency. The linearization circuit generates an envelope signal based at least in part on a power level of the first signal and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal and the adjusted signal at a second terminal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation products that result from the intermodulation of the first frequency and the second frequency.

Abstract: A linearization circuit reduces intermodulation distortion in an amplifier that includes a first stage and a second stage. The linearization circuit receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency, generates an envelope signal based at least in part on a power level of the first signal, and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal, the first stage receives the adjusted signal, and the second stage does not receive the adjusted signal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation between the first frequency and the second frequency from the output of the amplifier.

Abstract: Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include a circuit assembly for performing a switching function that includes a branch including a main path in parallel with an auxiliary path. The circuit assembly also includes a gate bias network connected to the main path and to the auxiliary path, the main path and the auxiliary path each having different structures that are configured to improve linearity of the switching function.

Abstract: A radio frequency (RF) power amplifier circuit with a diode linearizer circuit. The power amplifier circuit has an input and an output, as well as a power amplifier transistor with a first terminal connected to the input, a second terminal connected to the output, and a third terminal. The linearizer circuit is connected to the third terminal and to ground, and has a non-linear current-voltage curve as well as a non-linear capacitance. The linearizer circuit reduces inter-modulation products in a current through the power amplifier transistor from the second terminal to the third terminal that corresponds to an input signal applied to the input.

Abstract: Methods, systems and devices for protecting partially processed electronic parts, are disclosed. In some embodiments, a method for protecting electronic parts includes applying a first protective sheet on one or more partially-processed semiconductor devices, removing the first protective sheet, and performing a semiconductor-processing operation on the one or more partially-processed semiconductor devices. In some embodiments, a semiconductor processing system for protecting electronic parts includes one or more partially-processed semiconductor devices, and a first protective sheet applied on the one or more partially-processed semiconductor devices, the first protective sheet being subsequently removed, and a semiconductor-processing operation being performed on the one or more partially-processed semiconductor devices.

Abstract: A bonding structure includes a first layer of first alloy component disposed on a substrate and a first layer of a second alloy component disposed on the first alloy component. The second alloy component has a lower melting temperature than the first alloy component. A second layer of the first alloy component is disposed on the first layer of the second alloy component and a second layer of the second alloy component is disposed on the second layer of the first alloy component.

Abstract: A quasi-differential amplifier with an input port and an output port. The amplifier has a phase shifter network with a first port connected to the input port, a second port, and a third port. A first amplifier has an input connected to the second port of the phase shifter network, and an output, and a second amplifier has an input connected to the third port of the phase shifter network, and an output. A balun circuit includes a first differential port connected to an output of the first amplifier, a second differential port connected to an output of the second amplifier, and a single-ended port. An output matching network is connected to the single-ended port of the balun circuit and to the output port.

Abstract: Apparatus and methods for biasing of power amplifiers are disclosed. In one embodiment, a mobile device includes a transceiver that generates a radio frequency signal and a power amplifier enable signal, a power amplifier that provides amplification to the radio frequency signal and that is biased by a bias signal, and a bias circuit that receives the power amplifier enable signal and generates the bias signal. The bias circuit includes a gain correction circuit that generates a correction current in response to activation of the power amplifier enable signal, and a primary biasing circuit that generates the bias signal based on the correction current and the power amplifier enable signal.