Abstract: An elementary image acquisition or display device, including a focusing structure with microlenses, each microlens being shaped to focus incident light beams towards a substrate while avoiding intermediate conductive tracks and vias.

Abstract: A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate.

Abstract: A MOS transistor includes an etch stop layer presenting a density of less than a determined threshold value, below which the material of said stop layer is permeable to molecules of dihydrogen and/or water. The material may comprise a nitride. A material used for the etch stop layer preferably has a density value of less than about 2.4 g/cm3.

Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Abstract: A method and a system for qualifying an integrated circuit according to a parasitic supply peak detector that it contains, including: supply of the integrated circuit to be tested under at least a first voltage; checking of a starting of the circuit; application of at least one first noise peak on the circuit power supply, while respecting an amplitude and time gauge; and comparison of average currents consumed by the circuit before and after the peak.

Abstract: A layer of a semiconductor material is epitaxially grown on a single-crystal semiconductor structure and on a polycrystalline semiconductor structure. The epitaxial layer is then etched in order to preserve a non-zero thickness of said material on the single-crystal structure and a zero thickness on the polycrystalline structure. The process of growth and etch is repeated, with the same material or with a different material in each repetition, until a stack of epitaxial layers on said single-crystal structure has reached a desired thickness. The single crystal structure is preferably a source/drain region of a transistor, and the polycrystalline structure is preferably a gate of that transistor.

Abstract: The present invention concerns an image sensor having a plurality of pixels each including a photosensor, a first node having a first capacitance connected to the photosensor, a second node having a second capacitance and selectively connected to the photosensor, and reading circuitry operable to read independently a first voltage value stored at the first node and a second voltage value stored at the second node.

Abstract: A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.

Abstract: A process for determining the displacement of an entity equipped with a sensor for capturing a sequence of images, comprising a step for determining a motion vector associated with a current image as a function of at least one correlation calculation between a first block of pixels in the current image and a second block of pixels from which the vector points towards said first block of pixels, with said second block being in a previous image in the sequence of images, wherein the dimensions of the first block are determined as a function of at least a motion vector associated with a previous image in the image sequence.

Abstract: An image processing system includes a memory for storing data associated with pixels of images, with the pixels having spatial coordinates in an image coordinate system having first and second axes; a processing device including a processor which processes the associated data; and an interface device which accesses in memory addresses associated with pixels of a block of pixels. In the interface device, access information is received indicating a base memory address, information regarding the dimensions of the block along the axes of the image coordinate system, and a storage method. At least one access rule is selected from multiple rules as a function of the storage method. The memory is accessed at the addresses associated with the pixels in the block, by applying the selected rule starting from the base address and taking into account the dimensions of the block.

Abstract: A single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.

Abstract: A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration perio

Abstract: A method for forming an empty area under a layer of a given material, including forming on a substrate a stacking of a photosensitive layer and of a layer of the given material; insolating a portion of the photosensitive layer or its complement according to whether the photosensitive layer is positive or negative with an electron beam crossing the layer of the given material; and removing the portion of the photosensitive layer.

Abstract: A method and a circuit for detecting a binary state supported by an analog symbol, comprising sampling the symbol with a sampling signal based on a frequency having a period shorter than the duration of a symbol, selecting a number of significant samples smaller than the number of samples which would be obtained with a sampling of the symbol at said frequency, and deciding of the symbol state based on the selected samples.

Abstract: A method for cadence detection in a sequence of video fields is based on at least a search for cadence patterns in a sequence of bits representative of the motion in at least a part of the field from one field to another in the field sequence. The signaling of field skip and/or field repeat commands as applied to the fields in the field sequence is considered during the cadence detection operation so as to field skips and repeats.

Abstract: A method for controlling the execution of a program implementing successive operations, including, during program execution, comparing each operation with a pre-established list, and for each operation contained in the list, incrementing and memorizing a number of occurrences of this operation; and at the end of the program execution, comparing the number of occurrences of the current program execution for each operation with previously-stored ranges of numbers of occurrences assigned to each operation.

Abstract: A resistive element having two vertical resistive portions placed in two holes formed in the upper portion of a substrate and a horizontal resistive portion placed in a buried cavity connecting the bottoms of the holes.

Abstract: A pump having: a cavity formed inside an insulating substrate, the upper part of the substrate being situated near the cavity having an edge; a conductive layer covering the inside of the cavity up to the edge and optionally covering the edge itself; a flexible membrane made of a conductive material placed above the cavity and resting against the edge; a dielectric layer covering the conductive layer or the membrane whereby insulating the portions of the conductive layer and of the membrane that are near one another; at least one aeration line formed in the insulating substrate that opens into the cavity via an opening in the conductive layer, and; terminals for applying a voltage between the conductive layer and the membrane.

Abstract: A support wafer made of silicon wafer comprising, on a first surface a porous silicon layer having protrusions, porous silicon pillars extending from the porous silicon layer to the second surface of the wafer, in front of each protrusion. Layers constituting a fuel cell can be formed on the support wafer.

Abstract: A variable gain amplifier having an input node, a variable current source including a control input coupled to the input node, first and second branches coupled in parallel between a first supply terminal and the variable current source, the first and second branches defining a differential pair arranged to be controlled by first and second differential gain signals and having first and second output terminals, one of the output terminals including an output node of the variable gain amplifier; and a potential divider having a middle node coupled to the first and second output terminals, wherein the middle node is also coupled to the input node by a capacitor.