Abstract: An optical element or module is designed to be placed in front of an optical sensor of a semiconductor component. At least one optically useful part of the element or module is provided through which the image to be captured is designed to pass. A method for obtaining such an optical element or module includes forming at least one through passage between a front and rear faces of the element or module. The front and rear faces are covered with a mask. Ion doping is introduced through the passage. As a result, the element or module has a refractive index that varies starting from a wall of the through passage and into the optically useful part. An image capture apparatus includes an optical imaging module having at least one such element or module.

Abstract: A barrel shifter receiving N symbols, arranged n2 distinct groups of n1 symbols, applying a circular shift to the N symbols. The barrel shifter comprises n2 first barrel shifters, each applying a first circular shift to one of the groups of n1 symbols; a rearrangement module receiving the N symbols provided by the first barrel shifters and providing N symbols arranged, in a determined manner, in n1 distinct groups of n2 symbols; n1 second barrel shifters, each applying a second circular shift to one of the distinct groups of n2 symbols; a control module providing, to each first barrel shifter, an identical signal bs_ctrl1 representing the first shift, and providing, to each second barrel shifter, an identical signal bs_ctrl2 representing the second shift; and a switching module switching at least two of the symbols of the N symbols.

Abstract: A method and a circuit for masking a digital word by application of a random bijection, including applying at least one first operation including selecting a non-disjoint subset of the word having its position and size depending on a first random quantity, and assigning to each bit of the subset, the state of the bit having a symmetrical position with respect to the middle of the subset, to obtain a masked digital quantity.

Abstract: A motion estimation method and device are provided for processing images to be inserted, between a preceding original image and a following original image, into a sequence of images. Each image is divided into pixel blocks associated with motion vectors. For a current block of an image being processed, motion vectors associated with blocks of the image being processed and/or associated with blocks of a processed image are selected. Candidate vectors are generated from selected motion vectors. An error is calculated for each candidate vector. A penalty is determined for a subset of candidate vectors on the basis of the values of the pixels of the pixel block in the preceding original image from which the candidate motion vector points to the current block and/or on the basis of the values of the pixels of the pixel block in the following original image to which the candidate motion vector points from the current block.

Abstract: A mixer-amplifier of an RF signal including at least an amplifier circuit and a mixing circuit controlled at a local oscillator frequency, for amplifying a signal applied on at least one input terminal and converting a first frequency of this signal into a second, lower, frequency, and including a reverse feedback loop switched at the local oscillator frequency.

Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.

Abstract: A structure for protecting an integrated circuit against electrostatic discharges, including a device for removing overvoltages between first and second power supply rails; and a protection cell connected to a pad of the circuit including a diode having an electrode, connected to a region of a first conductivity type, connected to the second power supply rail and having an electrode, connected to a region of a second conductivity type, connected to the pad and, in parallel with the diode, a thyristor having an electrode, connected to a region of the first conductivity type, connected to the pad and having a gate, connected to a region of the second conductivity type, connected to the first rail, the first and second conductivity types being such that, in normal operation, when the circuit is powered, the diode is non-conductive.

Abstract: A method for depositing a silicon oxide layer on a substrate including a silicon region and a silicon-germanium region, including the steps of: forming a very thin silicon layer having a thickness ranging from 0.1 to 1 nm above silicon-germanium; and depositing a silicon oxide layer on the substrate.

Abstract: A method and a circuit for protecting a digital quantity over a first number of bits, in an algorithm executing at least one modular exponentiation of data by the quantity, the steps including at least one squaring up and at least one multiplication and implementing, for each bit of the quantity, different calculation steps according to the state of the bit, a same number of multiplications being performed whatever the state of the bit and all the calculation steps using a multiplication being taken into account to calculate a final result.

Abstract: A semiconductor device includes a substrate. On at least one face of that substrate, integrated circuits are formed. At least one electromagnetic waveguide is also included, that waveguide including two metal plates that are placed on either side of at least one part of the thickness of the substrate and are located facing each other. Two longitudinal walls are placed facing each other and are formed by metal vias made in holes passing through the substrate in its thickness direction. The metal vias electrically connect the two metal plates.

Abstract: A method and a circuit for ciphering or deciphering data with a key by using at least one variable stored in a storage element and updated by the successive operations, the variable being masked by at least one first random mask applied before use of the key, then unmasked by at least one second mask applied after use of the key, at least one of the masks being dividable into several portions successively applied to the variable and which, when combined, represent the other mask.

Abstract: An inductive element formed of planar windings in different conductive levels, the windings being formed in a number of levels smaller by one unit than the number of windings, two of the windings being interdigited in a same level.

Abstract: A method for forming gate, source, and drain contacts on a MOS transistor having an insulated gate including polysilicon covered with a metal gate silicide, this gate being surrounded with at least one spacer made of a first insulating material, the method including the steps of a) covering the structure with a second insulating material and leveling the second insulating material to reach the gate silicide; b) oxidizing the gate so that the gate silicide buries and covers the a silicon oxide; c) selectively removing the second insulating material; and d) covering the structure with a first conductive material and leveling the first conductive material all the way to a lower level at the top of the spacer.

Abstract: An array of functional cells includes a subset of cells powered by at least one supply rail. That supply rail is formed of first segments located on a first metallization level and second segments located on a second metallization level with at least one conductor element extending between the first and second segments to electrically connect successive segments of the supply rail.

Abstract: A DC-DC voltage down-converter for an electronic device supplied by a battery and having a bus interface for the interconnection with another electronic device capable of supplying electric power is provided. The DC-DC voltage down-converter includes a terminal coupled to a voltage supply line of the bus interface and operable to receive a input current from the another electronic device. The DC-DC voltage down-converter further includes an electric energy storage element coupled between the battery and the terminal, the electric energy storage element being operable to storage/release electric energy and a drive circuit arranged to control the storage/release of the electric energy storage element, so as to cause an electric power generated by the input current supplied by the another electronic device through the voltage supply line to re-charge the battery.

Abstract: A clock gate includes a first Muller gate that receives at its inputs a clock signal and an enable signal. The output of the first Muller gate is applied, with a delayed version of the clock signal, to a second Muller gate. A logic circuit operates to logically combine the output of the second Muller gate with a delayed version of the clock signal. The output of the logic circuit provides a gated clock output.

Abstract: A read boost circuit arranged to boost the voltage difference between a pair of complementary bit lines of a memory device during a read operation, the read boost circuit including: a first transistor adapted to be controlled by the voltage level on a first bit line of the pair of bit lines to couple a second bit line of the pair of bit lines to a first supply voltage; and a second transistor connected directly to ground and adapted to be controlled by the voltage level on the second bit line to couple the first bit line to ground.

Abstract: A housing includes a body with a first silicon element and a second porous silicon element, at least one first cavity provided in the porous silicon element, a first electrically conducting contact area electrically coupled to at least a portion of at least one internal wall of the at least one first cavity, and a second electrically conducting contact area electrically coupled to a different portion of the at least one internal wall of the second porous silicon element of the at least one first cavity, wherein the two contact areas are electrically isolated from each other.