Patents Assigned to STMicroelectronic S.A.
  • Patent number: 8358683
    Abstract: A channel equalizer arranged to receive a data signal encoded by a plurality of amplitude levels, the circuitry including a filter having a plurality of taps, each tap generating an output signal based on a coefficient, an input for receiving an error signal for adapting the coefficients, and an output for outputting a filtered signal; and blind error generation circuitry arranged to generate the error signal, the blind error generation circuitry including: error estimating circuitry arranged to estimate the error of the filtered signal based on maximum likelihood; and adding circuitry coupled to the error estimating circuitry and to the output of the filter and arranged to add at least part of the filtered signal to the error estimated by the error estimating circuitry to generate the error signal.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: January 22, 2013
    Assignee: STMicroelectronics S.A.
    Inventor: Philippe Graffouliere
  • Patent number: 8354293
    Abstract: An imaging optical module is designed to be placed in front of an optical image sensor of a semiconductor component. The module includes at least one element which has a refractive index that varies between its optical axis and its periphery, over at least an annular part and/or over its central part. The element may be a tablet in front of the semiconductor sensor or a lens in front of the semiconductor sensor. The direction of variation in refractive index may be oppositely oriented with respect to the table and lens.
    Type: Grant
    Filed: May 14, 2010
    Date of Patent: January 15, 2013
    Assignee: STMicroelectronics S.A.
    Inventors: Emmanuelle Vigier-Blanc, Guillaume Cassar
  • Publication number: 20130009041
    Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.
    Type: Application
    Filed: September 6, 2012
    Publication date: January 10, 2013
    Applicant: STMicroelectronics S.A.
    Inventors: Frédéric Barbier, Yvon Cazaux
  • Patent number: 8346982
    Abstract: A switch for switching video signals in a set top box between a first interface for connecting the set top box to a television, a second interface for connecting the set top box to a video playback device, and decoding circuitry for decoding a video stream, the set top box including a processor having a low power mode in which the decoding circuitry is inactive, the switch including detection circuitry arranged to detect, while the processor is in the low power mode, activity on a video input line of one of the first and second interfaces, and arranged to output an activation signal to switching circuitry in the switch to activate a loop through between the first and second interfaces when activity is detected.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: January 1, 2013
    Assignee: STMicroelectronics S.A.
    Inventors: Sébastien Laville, Jean-Marc Merval
  • Patent number: 8339848
    Abstract: A method of controlling an electronic charge retention circuit for time measurement, including at least a first capacitive element, the dielectric of which has a leakage, and at least a second capacitive element, the dielectric of which has a higher capacitance than the first, the two elements having a common electrode defining a floating node that can be connected to an element for measuring its residual charge, in which a charge retention period is programmed or initialized by injecting or extracting charges via the first element.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: December 25, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Francesco La Rosa
  • Patent number: 8338855
    Abstract: A voltage-controlled vertical bi-directional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the control structure includes, on the front surface side, a first P-type well in which is formed an N-type region, and a second P-type well in which is formed a MOS transistor, the first P-type well and the gate of the MOS transistor being connected to a control terminal, said N-type region being connected to a main terminal of the MOS transistor, and the second main terminal of the MOS transistor being connected to the rear surface voltage of the switch.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: December 25, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Samuel Menard
  • Patent number: 8339388
    Abstract: A method and a circuit for controlling a power recovery stage of a plasma display panel including a resonant circuit of at least one inductive element and one capacitive element, wherein the capacitive element is precharged to half a supply voltage of the display panel.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: December 25, 2012
    Assignee: STMicroelectronics S.A.
    Inventors: Bertrand Rivet, Frédéric Gautier, Benoit Peron
  • Patent number: 8335121
    Abstract: A device, and a corresponding method of implementation, for SRAM memory information storage are provided. The device is powered by a supply voltage and includes an array of base cells organized in base columns, and at least one mirror column of at least one mirror cell liable to simulate the behavior of the cells in a base column. The device further includes Emulation means, in a mirror column, of the most restricting cell in a base column, Means for varying a mirror power supply voltage for the mirror column, and Means for copying the mirror power supply voltage in the emulated base column.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: December 18, 2012
    Assignee: STMicroelectronics S.A.
    Inventors: Cyrille Dray, Francois Jacquet, Sébastien Barasinski
  • Publication number: 20120314813
    Abstract: A wireless data transmitter including: a data modulator adapted to modulate a data signal based on a frequency signal; and at least one antenna adapted to wirelessly transmit the modulated data signal and the frequency signal independently.
    Type: Application
    Filed: June 7, 2012
    Publication date: December 13, 2012
    Applicants: Universite de Lille 1, STMicroelectronics S.A.
    Inventors: Christophe Loyez, Samuel Foulon, Sébastien Pruvost, Nathalie Rolland
  • Patent number: 8330158
    Abstract: The generation of a chip identifier supporting at least one integrated circuit, which includes providing a cutout of at least one conductive path by cutting the chip, the position of the cutting line relative to the chip conditioning the identifier.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: December 11, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Fabrice Marinet
  • Patent number: 8331203
    Abstract: An electronic charge retention circuit for time measurement, including: at least a first capacitive element, a first electrode of which is connected to a floating node (F); at least a second capacitive element, a first electrode of which is connected to the floating node, the first capacitive element having a leakage through its dielectric space and the second capacitive element having a capacitance greater than the first; and at least a first transistor having an isolated control terminal connected to the floating node.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: December 11, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Francesco La Rosa
  • Patent number: 8320176
    Abstract: An electronic charge retention circuit for time measurement, implanted in an array of EEPROM memory cells, each including a selection transistor in series with a floating-gate transistor, the circuit including, on any one row of memory cells: a first subassembly of at least a first cell, the thickness of the dielectric of the tunnel window of the floating-gate transistor of which is less than that of the other cells; a second subassembly of at least a second cell, the drain and source of the floating-gate transistor of which are interconnected; a third subassembly of at least a third cell; and a fourth subassembly of at least a fourth cell, the tunnel window of which is omitted, the respective floating gates of the transistors of the cells of the four subassemblies being interconnected.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: November 27, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Francesco La Rosa
  • Patent number: 8321691
    Abstract: A method for masking a digital quantity used by a calculation executed by an electronic circuit and including several iterations, each including at least one operation which is a function of at least one value depending on the digital quantity, the method including at least one first step of displacement of at least one operand of the operation in a storage element selected independently from the value.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: November 27, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Fabrice Romain
  • Publication number: 20120273952
    Abstract: Microelectronic chip including a semiconductor substrate; at least one area of its surface which is suitable to be electrically connected to a metal frame designed to accommodate the chip; at least one interconnect area formed by a copper-based conductive layer and comprising a connecting device, the interconnect area being connected to the area by a conductor, wherein the area is formed by a layer forming a copper diffusion barrier inserted between interconnect area and the substrate.
    Type: Application
    Filed: April 25, 2012
    Publication date: November 1, 2012
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Laurent Gay, Francois Guyader, Frederic Diette
  • Patent number: 8299541
    Abstract: A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: October 30, 2012
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Damien Lenoble, Philippe Coronel, Robin Cerutti
  • Patent number: 8300015
    Abstract: In relation to a current image from a sequence of images captured by an image sensor, in a first step, a temporary motion vector is determined as a function of reference data comprising a preceding image and a motion vector associated to the preceding image. Then, in a second step, if the temporary motion vector does not satisfy a reliability criterion, the first step is repeated in relation to a following image, on the basis of the same reference data. Otherwise, the temporary motion vector is associated with the current image.
    Type: Grant
    Filed: June 30, 2006
    Date of Patent: October 30, 2012
    Assignee: STMicroelectronics S.A.
    Inventor: Pascal Mellot
  • Patent number: 8296497
    Abstract: A system and method of making a firmware self updatable depending on option information stored in a configuration module. The configuration module can either be in a memory device or a memory controller. The self-updation flexibility can be achieved by customizing the options as per the customer's requirements and can be done either through an USB interface or by pre-programming the configuration module or any other communication or programming options. The option information is provided by using a configurable module inside either the memory or the memory controller. After the basic initialization operations, the firmware reads the option information from the controller itself or any other non-volatile memory and performs the tasks to enhance the overall performance.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: October 23, 2012
    Assignees: STMicroelectronics PVT. Ltd., STMicroelectronics S.A.
    Inventors: Alok Kumar Mittal, Hubert Rousseau, Rosarium Pila
  • Publication number: 20120261783
    Abstract: A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.
    Type: Application
    Filed: April 12, 2012
    Publication date: October 18, 2012
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Jens PRIMA, François ROY, Michel MARTY
  • Publication number: 20120261732
    Abstract: A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.
    Type: Application
    Filed: April 12, 2012
    Publication date: October 18, 2012
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Michel Marty, François Roy, Jens Prima
  • Publication number: 20120261670
    Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.
    Type: Application
    Filed: April 12, 2012
    Publication date: October 18, 2012
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.
    Inventors: Michel Marty, François Roy, Jens Prima